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公开(公告)号：US11876016B2
公开(公告)日：2024-01-16
申请号：US17100858
申请日：2020-11-21
发明人： Gang Yang , Xiang Hui Zhao , Biao Zheng , Zui Xin Zeng , Lianjuan Ren , Jian Dai
IPC分类号： H01L21/768 , H01L21/311
CPC分类号： H01L21/7681 , H01L21/31116 , H01L21/31144 , H01L21/76877
摘要： Embodiments of the present disclosure provide a method for forming a hole structure in a semiconductor device. The method for forming a hole structure having a first hole portion and a second hole portion connected to and over the first portion in a stack structure of a semiconductor device includes determining a hard mask layer. An etching resistivity of the hard mask layer may be inversely proportional to a difference between a first lateral dimension of the first hole portion and a second lateral dimension of the second hole portion, and the first lateral dimension may be less than the second lateral dimension. The method may also include forming the hard mask layer over the stack structure, and patterning the hard mask layer to form a first patterned hard mask layer that has a first mask opening. The first mask opening may have the first lateral dimension. The method may further include removing a portion of the stack structure exposed by the first patterned hard mask layer to form an initial hole structure in the stack structure, and patterning the first patterned hard mask layer to form a second patterned mask layer that has a second mask opening. The second mask opening may have the second lateral dimension. The method may further include removing another portion of the stack structure exposed by the second patterned hard mask layer to form the hole structure.
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公开(公告)号：US20200243373A1
公开(公告)日：2020-07-30
申请号：US16354822
申请日：2019-03-15
发明人： Gang Yang , Xiang Hui Zhao , Biao Zheng , Zui Xin Zeng , Lianjuan Ren , Jian Dai
IPC分类号： H01L21/768 , H01L21/311
摘要： Embodiments of the present disclosure provide a method for forming a hole structure in a semiconductor device. The method includes forming a first etch mask over a stack structure, and removing a portion of the stack structure exposed by the first etch mask. The first etch mask may have a first mask opening with a first lateral dimension. The method may also include forming a second etch mask from the first etch mask. The second etch mask may have a second mask opening with a second lateral dimension that is greater than the first lateral dimension. The method may further include removing another portion of the stack structure exposed by the second etch mask to form the hole structure having a first hole portion and a second hole portion connected to and over the first hole portion.
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公开(公告)号：US11018052B2
公开(公告)日：2021-05-25
申请号：US16691827
申请日：2019-11-22
发明人： Gang Yang
IPC分类号： H01L21/768 , H01L21/027 , H01L21/033 , H01L21/311 , H01L23/522 , H01L23/528
摘要： A method for fabricating a semiconductor device that includes forming a mask stack over a semiconductor structure. The mask stack has a first mask layer and a second mask layer, where the second mask layer is arranged between the first mask layer and the semiconductor structure. The method further includes patterning a first pattern in the mask stack. The first pattern includes a first opening having first sidewalls formed in the first mask layer, a second opening having second sidewalls formed in the second mask layer, and a third opening having third sidewalls formed in the semiconductor structure. The first, second, and third sidewalls of the respective openings of the first pattern are formed around a central axis, where the second sidewalls of the second opening are located further away from the central axis than both the first and third sidewalls of the first and third openings, respectively.
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公开(公告)号：US20210104429A1
公开(公告)日：2021-04-08
申请号：US17100858
申请日：2020-11-21
发明人： Gang Yang , Xiang Hui Zhao , Biao Zheng , Zui Xin Zeng , Lianjuan Ren , Jian Dai
IPC分类号： H01L21/768 , H01L21/311
摘要： Embodiments of the present disclosure provide a method for forming a hole structure in a semiconductor device. The method for forming a hole structure having a first hole portion and a second hole portion connected to and over the first portion in a stack structure of a semiconductor device includes determining a hard mask layer. An etching resistivity of the hard mask layer may be inversely proportional to a difference between a first lateral dimension of the first hole portion and a second lateral dimension of the second hole portion, and the first lateral dimension may be less than the second lateral dimension. The method may also include forming the hard mask layer over the stack structure, and patterning the hard mask layer to form a first patterned hard mask layer that has a first mask opening. The first mask opening may have the first lateral dimension. The method may further include removing a portion of the stack structure exposed by the first patterned hard mask layer to form an initial hole structure in the stack structure, and patterning the first patterned hard mask layer to form a second patterned mask layer that has a second mask opening. The second mask opening may have the second lateral dimension. The method may further include removing another portion of the stack structure exposed by the second patterned hard mask layer to form the hole structure.
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公开(公告)号：US11817348B2
公开(公告)日：2023-11-14
申请号：US16354822
申请日：2019-03-15
发明人： Gang Yang , Xiang Hui Zhao , Biao Zheng , Zui Xin Zeng , Lianjuan Ren , Jian Dai
IPC分类号： H01L21/768 , H01L21/311
CPC分类号： H01L21/7681 , H01L21/31116 , H01L21/31144 , H01L21/76877
摘要： Embodiments of the present disclosure provide a method for forming a hole structure in a semiconductor device. The method includes forming a first etch mask over a stack structure, and removing a portion of the stack structure exposed by the first etch mask. The first etch mask may have a first mask opening with a first lateral dimension. The method may also include forming a second etch mask from the first etch mask. The second etch mask may have a second mask opening with a second lateral dimension that is greater than the first lateral dimension. The method may further include removing another portion of the stack structure exposed by the second etch mask to form the hole structure having a first hole portion and a second hole portion connected to and over the first hole portion.
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