公开(公告)号：US20180308732A1

公开(公告)日：2018-10-25

申请号：US15919169

申请日：2018-03-12

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： WILLIAM MOFFAT ,  CRAIG WALTER MCCOY

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/02 ,  F27D5/00 ,  F27D1/18

CPC classification number: H01L21/67376 ,  F27D1/1866 ,  F27D5/0037 ,  F27D2007/063 ,  H01L21/02046 ,  H01L21/67034

Abstract: A process chamber system adapted for both vacuum process steps and steps at pressures higher than atmospheric pressure. The chamber door may utilize a double door seal which allows for high vacuum in the gap between the seals such that the sealing force provided by the high vacuum in the seal gap is higher than the opposing forces due to the pressure inside the chamber and the weight of the components.

公开(公告)号：US20190314738A1

公开(公告)日：2019-10-17

申请号：US16189631

申请日：2018-11-13

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： WILLIAM MOFFAT ,  CRAIG WALTER MCCOY

IPC: B01D5/00

Abstract: A trap system adapted to trap polyimide or other vapors exiting from a process chamber. The vapors are routed from the process chamber through a heated exit line at low pressure and then cooled, resulting in condensation at a selected location. The condensed vapors accumulate in a liquid trap. A method of condensing polymer vapors in vacuum exit lines of process chambers, where the flow which may have vaporized polymer vapor is cooled to enhance condensation at a chosen location. The liquid trap can be emptied and replaced, resulting in the removal of the condensed liquid. The chamber exit lines are protected from condensation build up.

公开(公告)号：US20190109022A1

公开(公告)日：2019-04-11

申请号：US16174260

申请日：2018-10-29

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： WILLIAM MOFFAT

IPC: H01L21/67 ,  B32B27/28

Abstract: A process for the drying, and subsequent imidization, of polyimide precursors which minimizes or eliminates voids and which minimizes or eliminates discoloration. The process uses a sequential set of descending pressure operations that allow for time efficient processing of wafers. The set of descending pressure operations are interspersed with evacuation processes using heated gasses, which combine heating and byproduct evacuation. The process results in layers with reduced or eliminated voiding, discoloration, and solvent retention.

公开(公告)号：US20180292122A1

公开(公告)日：2018-10-11

申请号：US15812753

申请日：2017-11-14

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： WILLIAM MOFFAT ,  CRAIG WALTER MCCOY

IPC: F25D21/14 ,  F25D19/00

Abstract: A trap system adapted to trap polyimide or other vapors exiting from a process chamber. The vapors are routed from the process chamber through a heated exit line at low pressure and then cooled, resulting in condensation at a selected location. The condensed vapors accumulate in a liquid trap. A method of condensing polymer vapors in vacuum exit lines of process chambers, where the flow which may have vaporized polymer vapor is cooled to enhance condensation at a chosen location. The liquid trap can be emptied and replaced, resulting in the removal of the condensed liquid. The chamber exit lines are protected from condensation build up.

公开(公告)号：US20200013591A1

公开(公告)日：2020-01-09

申请号：US16276040

申请日：2019-02-14

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： WILLIAM MOFFAT ,  Craig Walter McCoy

IPC: H01J37/32 ,  H01L21/677 ,  H01L21/67 ,  H01L21/673

Abstract: A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching.

公开(公告)号：US20180308668A1

公开(公告)日：2018-10-25

申请号：US15898178

申请日：2018-02-15

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： WILLIAM MOFFAT ,  Craig Walter McCoy

IPC: H01J37/32

CPC classification number: H01J37/32623 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32834 ,  H01J2237/3343

Abstract: A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching.

公开(公告)号：US20190287835A1

公开(公告)日：2019-09-19

申请号：US16263953

申请日：2019-01-31

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： WILLIAM MOFFAT ,  CRAIG WALTER MCCOY

IPC: H01L21/68 ,  H01J37/32 ,  H01L21/687

Abstract: A device and method for alignment of substrates on a substrate support, such as a heated chuck. An alignment ring may be placed over the substrate support to maintain placement and alignment during processing, such as plasma processing. The aligned substrate may then be accessed by a robotic arm, as it is in a pre-determined location. Alignment rings of different interior diameters may be used for different substrate sizes. The alignment rings may be inserted onto and removed from the process oven containing the substrate support through the substrate access port, without the need to fully open the process chamber.

公开(公告)号：US20170213748A1

公开(公告)日：2017-07-27

申请号：US15206318

申请日：2016-07-11

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： WILLIAM MOFFAT

IPC: H01L21/67 ,  B32B27/28

CPC classification number: H01L21/67034 ,  B32B27/281 ,  B32B2250/24 ,  B32B2274/00

Abstract: A process for the drying, and subsequent imidization, of polyimide precursors which minimizes or eliminates voids and which minimizes or eliminates discoloration. The process uses a sequential set of descending pressure operations that allow for time efficient processing of wafers. The set of descending pressure operations are interspersed with evacuation processes using heated gasses, which combine heating and byproduct evacuation. The process results in layers with reduced or eliminated voiding, discoloration, and solvent retention.