公开(公告)号：US20080189490A1

公开(公告)日：2008-08-07

申请号：US11833750

申请日：2007-08-03

Applicant: Won-Moon Cheon ,  Yang-Sup Lee

Inventor： Won-Moon Cheon ,  Yang-Sup Lee

IPC: G06F13/00

CPC classification number: G06F12/0246 ,  G06F2212/7201

Abstract: A system and method for memory mapping are provided, the system including a logical unit to physical unit map table, data unit groups in signal communication with the map table, and log unit groups, each associated with a corresponding one of the data unit groups, where updated data for any data unit within one of the data unit groups is stored in any log unit within the corresponding one of the log unit groups, and the method including receiving write data for a logical unit number from a host determining which of a plurality of data block groups comprises the logical unit number, and storing the write data in any unfilled log unit of a log block group corresponding to the determined data block group.

Abstract translation: 提供了一种用于存储器映射的系统和方法，该系统包括到物理单元映射表的逻辑单元，与映射表信号通信的数据单元组以及每个与对应的数据单元组相关联的日志单元组， 其中在所述数据单元组之一内的任何数据单元的更新数据被存储在所述对应单元组中的相应一个中的任何日志单元中，并且所述方法包括从主机接收用于逻辑单元号的写入数据，所述主机确定多个 的数据块组包括逻辑单元号，并将写入数据存储在对应于所确定的数据块组的日志块组的任何未填充日志单元中。

公开(公告)号：US20080155317A1

公开(公告)日：2008-06-26

申请号：US11606900

申请日：2006-12-01

Applicant: Jin-Hyuk Kim ,  Yang-Sup Lee ,  Young-Gon Kim

Inventor： Jin-Hyuk Kim ,  Yang-Sup Lee ,  Young-Gon Kim

IPC: G06F11/00

CPC classification number: G11C29/76 ,  G06F12/0246 ,  G06F2212/1016 ,  G06F2212/7201 ,  G06F2212/7204

Abstract: An apparatus, memory device controller and method of controlling a memory device are provided. The example apparatus may include a bad block bitmap referencing unit configured to obtain bad block information from a bad block bitmap based on a given memory address, the given memory address being one of a logical memory address and a physical memory address corresponding to the logical memory address, the bad block information indicating whether a given memory block corresponding to the given memory address is a bad block and a memory mapping unit configured to obtain the physical memory address corresponding to the logical memory address, and configured to obtain a reserved physical memory address corresponding to the physical memory address if the bad block information indicates that the given memory block is a bad block. In an example, the apparatus may be embodied as a memory device controller including a flash translation layer (FTL).

Abstract translation: 提供了一种设备，存储器件控制器和控制存储器件的方法。 该示例设备可以包括坏块位图参考单元，其被配置为基于给定的存储器地址从坏块位图获得坏块信息，给定存储器地址是与逻辑存储器对应的逻辑存储器地址之一和物理存储器地址 指示与给定存储器地址相对应的给定存储块是否为坏块的坏块信息和被配置为获得与逻辑存储器地址对应的物理存储器地址的存储器映射单元，并且被配置为获得预留的物理存储器地址 对应于物理存储器地址，如果坏块信息指示给定的存储器块是坏块。 在一个示例中，该装置可以被实现为包括闪存转换层（FTL）的存储器件控制器。

公开(公告)号：US09239780B2

公开(公告)日：2016-01-19

申请号：US13613443

申请日：2012-09-13

Applicant: Gyu-Dong Shim ,  Yang-Sup Lee ,  Won-Moon Cheon

Inventor： Gyu-Dong Shim ,  Yang-Sup Lee ,  Won-Moon Cheon

IPC: G06F12/00 ,  G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/7205

Abstract: Memory blocks of a nonvolatile memory device are managed by identifying a full memory block, determining whether a block life of the full memory block exceeds a threshold value, and upon determining that the block life of the full memory block exceeds the threshold value, selecting the full memory block as a target block for garbage collection. The threshold of the block life is determined using an average write distance of logical pages programmed in the nonvolatile memory device.

Abstract translation: 非易失性存储器件的存储器块通过识别完整存储器块，确定整个存储器块的块寿命是否超过阈值来管理，并且在确定完整存储器块的块寿命超过阈值时，选择 完全内存块作为垃圾收集的目标块。 使用在非易失性存储器件中编程的逻辑页面的平均写入距离来确定块寿命的阈值。

公开(公告)号：US07797481B2

公开(公告)日：2010-09-14

申请号：US11771531

申请日：2007-06-29

Applicant: Yang-Sup Lee ,  Chan-Ik Park ,  Won-Moon Cheon

Inventor： Yang-Sup Lee ,  Chan-Ik Park ,  Won-Moon Cheon

IPC: G06F12/16

CPC classification number: G06F12/0246 ,  G06F2212/1036 ,  G06F2212/7211

Abstract: A memory system and corresponding method of wear-leveling are provided, the system including a controller, a random access memory in signal communication with the controller, and another memory in signal communication with the controller, the other memory comprising a plurality of groups, each group comprising a plurality of first erase units or blocks and a plurality of second blocks, wherein the controller exchanges a first block from a group with a second block in response to at least one block erase count within the group; and the method including receiving a command having a logical address, converting the logical address into a logical block number, determining a group number for a group that includes the converted logical block number, and checking whether group information comprising block erase counts for the group is loaded into random access memory, and if not, loading the group information into random access memory.

Abstract translation: 提供了一种存储器系统和相应的磨损均衡方法，所述系统包括控制器，与控制器进行信号通信的随机存取存储器，以及与控制器进行信号通信的另一存储器，所述另一存储器包括多个组，每个组 组包括多个第一擦除单元或块和多个第二块，其中响应于该组内的至少一个块擦除计数，控制器从具有第二块的组与第一块交换第一块; 所述方法包括：接收具有逻辑地址的命令，将所述逻辑地址转换为逻辑块号，确定包含所转换的逻辑块号的组的组号，以及检查是否包括所述组的块擦除计数的组信息是 加载到随机存取存储器中，如果没有，将组信息加载到随机存取存储器中。

公开(公告)号：US09195541B2

公开(公告)日：2015-11-24

申请号：US13613906

申请日：2012-09-13

Applicant: Yang-Sup Lee

Inventor： Yang-Sup Lee

IPC: G06F11/00 ,  G06F11/10 ,  H03M13/05

CPC classification number: G06F11/108 ,  G06F11/1076 ,  G06F2211/109 ,  H03M13/05

Abstract: A method for controlling a nonvolatile memory device includes reading a sub stripe including a plurality of sub pages stored in a first region, writing data stored in valid sub pages of the sub stripe to a second region different from the first region, and generating parity data using the data written to the second region and constituting a new sub stripe.

Abstract translation: 一种用于控制非易失性存储器件的方法，包括：读取包含存储在第一区域中的多个子页面的子条带，将存储在该子条带的有效子页面中的数据写入到与第一区域不同的第二区域，以及生成奇偶校验数据 使用写入第二区域的数据并构成新的子条带。

公开(公告)号：US20080098195A1

公开(公告)日：2008-04-24

申请号：US11637792

申请日：2006-12-13

Applicant: Won-Moon Cheon ,  Yang-Sup Lee

Inventor： Won-Moon Cheon ,  Yang-Sup Lee

IPC: G06F12/00

CPC classification number: G06F12/0246 ,  G06F12/0292 ,  G06F2212/7201

Abstract: A memory system is disclosed with a file system; a flash translation layer (FTL) receiving a logical address from the file system and translating it into a physical address, and a flash memory receiving the physical address. The FTL includes flag information and offset information, the flag information indicating page order for a memory block in the flash memory is a wrap-around order and the offset information defining a starting page for the memory block.

Abstract translation: 公开了一种具有文件系统的存储器系统; 从文件系统接收逻辑地址并将其翻译成物理地址的闪存转换层（FTL）以及接收物理地址的闪存。 FTL包括标志信息和偏移信息，指示闪速存储器中的存储块的页面顺序的标志信息是回绕顺序，并且偏移信息定义了存储器块的起始页。

公开(公告)号：US20080313505A1

公开(公告)日：2008-12-18

申请号：US11771531

申请日：2007-06-29

Applicant: Yang-Sup Lee ,  Chan-lk Park ,  Won-Moon Cheon

Inventor： Yang-Sup Lee ,  Chan-lk Park ,  Won-Moon Cheon

IPC: G06F11/00

CPC classification number: G06F12/0246 ,  G06F2212/1036 ,  G06F2212/7211

Abstract: A memory system and corresponding method of wear-leveling are provided, the system including a controller, a random access memory in signal communication with the controller, and another memory in signal communication with the controller, the other memory comprising a plurality of groups, each group comprising a plurality of first erase units or blocks and a plurality of second blocks, wherein the controller exchanges a first block from a group with a second block in response to at least one block erase count within the group; and the method including receiving a command having a logical address, converting the logical address into a logical block number, determining a group number for a group that includes the converted logical block number, and checking whether group information comprising block erase counts for the group is loaded into random access memory, and if not, loading the group information into random access memory.

Abstract translation: 提供了一种存储器系统和相应的磨损均衡方法，所述系统包括控制器，与控制器进行信号通信的随机存取存储器，以及与控制器进行信号通信的另一存储器，所述另一存储器包括多个组，每个组 组包括多个第一擦除单元或块和多个第二块，其中响应于该组内的至少一个块擦除计数，控制器从具有第二块的组与第一块交换第一块; 所述方法包括：接收具有逻辑地址的命令，将所述逻辑地址转换为逻辑块号，确定包含所转换的逻辑块号的组的组号，以及检查是否包括所述组的块擦除计数的组信息是 加载到随机存取存储器中，如果没有，将组信息加载到随机存取存储器中。

公开(公告)号：US20080055989A1

公开(公告)日：2008-03-06

申请号：US11710991

申请日：2007-02-27

Applicant: Kyoong-Han Lee ,  Young-Joon Choi ,  Yang-Sup Lee

Inventor： Kyoong-Han Lee ,  Young-Joon Choi ,  Yang-Sup Lee

IPC: G11C29/24

CPC classification number: G06F11/1068 ,  G11C16/04 ,  G11C29/76 ,  G11C2029/0409 ,  G11C2029/0411 ,  G11C2229/723

Abstract: A method for operating a memory system including a flash memory device having a plurality of memory blocks comprises determining whether a read error generated during a read operation of the flash memory device is caused by read disturbance and replacing a memory block which includes the read error, with a spare memory block if the read error is caused by read disturbance.

Abstract translation: 一种用于操作包括具有多个存储器块的闪速存储器件的存储器系统的方法，包括：确定在闪速存储器件的读取操作期间产生的读取错误是否由读取干扰引起，并且更换包括读取错误的存储器块， 如果读取错误是由读取干扰引起的，则会带有备用存储器块。

公开(公告)号：US20130227346A1

公开(公告)日：2013-08-29

申请号：US13613906

申请日：2012-09-13

Applicant: Yang-Sup Lee

Inventor： Yang-Sup Lee

IPC: G06F12/16 ,  H03M13/05 ,  G06F11/14

CPC classification number: G06F11/108 ,  G06F11/1076 ,  G06F2211/109 ,  H03M13/05

Abstract: A method for controlling a nonvolatile memory device includes reading a sub stripe including a plurality of sub pages stored in a first region, writing data stored in valid sub pages of the sub stripe to a second region different from the first region, and generating parity data using the data written to the second region and constituting a new sub stripe.

Abstract translation: 一种用于控制非易失性存储器件的方法，包括：读取包含存储在第一区域中的多个子页面的子条带，将存储在该子条带的有效子页面中的数据写入到与第一区域不同的第二区域，以及生成奇偶校验数据 使用写入第二区域的数据并构成新的子条带。

公开(公告)号：US08161320B2

公开(公告)日：2012-04-17

申请号：US11606900

申请日：2006-12-01

Applicant: Jin-Hyuk Kim ,  Yang-Sup Lee ,  Young-Gon Kim

Inventor： Jin-Hyuk Kim ,  Yang-Sup Lee ,  Young-Gon Kim

IPC: G06F11/00

CPC classification number: G11C29/76 ,  G06F12/0246 ,  G06F2212/1016 ,  G06F2212/7201 ,  G06F2212/7204

Abstract: An apparatus, memory device controller and method of controlling a memory device are provided. The example apparatus may include a bad block bitmap referencing unit configured to obtain bad block information from a bad block bitmap based on a given memory address, the given memory address being one of a logical memory address and a physical memory address corresponding to the logical memory address, the bad block information indicating whether a given memory block corresponding to the given memory address is a bad block and a memory mapping unit configured to obtain the physical memory address corresponding to the logical memory address, and configured to obtain a reserved physical memory address corresponding to the physical memory address if the bad block information indicates that the given memory block is a bad block. In an example, the apparatus may be embodied as a memory device controller including a flash translation layer (FTL).

Abstract translation: 提供了一种设备，存储器件控制器和控制存储器件的方法。 该示例设备可以包括坏块位图参考单元，其被配置为基于给定的存储器地址从坏块位图获得坏块信息，给定存储器地址是与逻辑存储器对应的逻辑存储器地址之一和物理存储器地址 指示与给定存储器地址相对应的给定存储块是否为坏块的坏块信息和被配置为获得与逻辑存储器地址对应的物理存储器地址的存储器映射单元，并且被配置为获得预留的物理存储器地址 对应于物理存储器地址，如果坏块信息指示给定的存储器块是坏块。 在一个示例中，该装置可以被实现为包括闪存转换层（FTL）的存储器件控制器。