POLYCRYSTALLINE THIN FILM, METHOD FOR PRODUCING THE SAME AND OXIDE SUPERCONDUCTOR
    1.
    发明申请
    POLYCRYSTALLINE THIN FILM, METHOD FOR PRODUCING THE SAME AND OXIDE SUPERCONDUCTOR 有权
    多晶薄膜,其制造方法和氧化物超导体

    公开(公告)号:US20100012349A1

    公开(公告)日:2010-01-21

    申请号:US12569601

    申请日:2009-09-29

    IPC分类号: H01B12/00 B32B15/04 C23C14/08

    摘要: An object of the invention is to provide a polycrystalline thin film which includes an intermediate layer that is made thinner while keeping high crystal orientation so as to prevent warpage of a substrate resulting from internal stress of the film. A polycrystalline thin film according to the invention includes an intermediate layer formed by a first layer and a second layer laminated in this order and provided on a metal substrate. The first layer has a rock-salt crystal structure and the second layer has a fluorite crystal structure.

    摘要翻译: 本发明的目的是提供一种多晶薄膜,其包括中间层,其在保持高结晶取向的同时制成更薄,以防止由于膜的内部应力引起的基板翘曲。 根据本发明的多晶薄膜包括由依次层叠的第一层和第二层形成的中间层,并设置在金属基板上。 第一层具有岩盐晶体结构,第二层具有萤石晶体结构。

    IBAD apparatus and IBAD method
    2.
    发明授权
    IBAD apparatus and IBAD method 有权
    IBAD装置和IBAD方法

    公开(公告)号:US08992740B2

    公开(公告)日:2015-03-31

    申请号:US13440509

    申请日:2012-04-05

    摘要: An IBAD apparatus includes, a target, a sputter ion source irradiating the target with sputter ions to sputter some of constituent particles of the target, a film formation region in which a base material for depositing thereon the particles sputtered from the target is disposed, and an assist ion beam irradiation device irradiating assist ion beams from a direction oblique to the direction of a normal of the film formation surface of the base material disposed in the film formation region, where the sputter ion source includes a plurality of ion guns arranged so as to be able to irradiate the target from an end portion on one side to an end portion on the other side with sputter ion beams, and current values for generating the sputter ion beams of the plurality of ion guns are set respectively.

    摘要翻译: IBAD装置包括靶,溅射离子源,溅射离子用溅射离子溅射目标物的一些构成颗粒,其中设置用于沉积靶材溅射的颗粒的基底材料的成膜区域;以及 辅助离子束照射装置,从设置在成膜区域的基材的成膜面的法线方向倾斜的方向照射辅助离子束,其中溅射离子源包括多个离子枪, 能够从溅射离子束的一侧的端部向另一侧的端部照射目标物,分别设定用于产生多个离子枪的溅射离子束的电流值。

    Underlying layer of alignment film for oxide superconducting conductor and method of forming same, and device for forming same
    3.
    发明授权
    Underlying layer of alignment film for oxide superconducting conductor and method of forming same, and device for forming same 有权
    用于氧化物超导导体的底层底层及其形成方法及其形成装置

    公开(公告)号:US08420575B2

    公开(公告)日:2013-04-16

    申请号:US13440516

    申请日:2012-04-05

    IPC分类号: H01L39/24

    摘要: A method of forming an underlying layer of an alignment film for an oxide superconducting conductor, includes arranging two or more kinds of targets along a lengthwise direction of a base material so as to face a surface of the base material; simultaneously irradiating an ion beam on surfaces of the two or more kinds of targets to deposit constituent particles of the targets on the surface of the base material in the order of the arrangement of the two or more kinds of targets; and forming a laminate in which two or more kinds of thin films are repeatedly laminated on the surface of the base material by passing the base material through a deposition region of the constituent particles a plurality of times so that the constituent particles of the targets are repeatedly deposited on the surface of the base material at each passage.

    摘要翻译: 一种形成用于氧化物超导导体的取向膜的下层的方法包括沿着基材的长度方向布置两种或更多种靶,以面对基材的表面; 同时在两种或更多种目标的表面上照射离子束,以按照两种或更多种目标的排列顺序将目标的构成颗粒沉积在基材的表面上; 并且通过使基材多次通过组成颗粒的沉积区域,使基材的表面反复层压两种以上的薄膜,使得靶的构成颗粒重复地形成层叠体 在每个通道处沉积在基材的表面上。

    Polycrystalline thin film, method for producing the same and oxide superconductor
    4.
    发明授权
    Polycrystalline thin film, method for producing the same and oxide superconductor 有权
    多晶薄膜,其制造方法和氧化物超导体

    公开(公告)号:US08299363B2

    公开(公告)日:2012-10-30

    申请号:US12569601

    申请日:2009-09-29

    IPC分类号: H01B12/00

    摘要: An object of the invention is to provide a polycrystalline thin film which includes an intermediate layer that is made thinner while keeping high crystal orientation so as to prevent warpage of a substrate resulting from internal stress of the film. A polycrystalline thin film according to the invention includes an intermediate layer formed by a first layer and a second layer laminated in this order and provided on a metal substrate. The first layer has a rock-salt crystal structure and the second layer has a fluorite crystal structure.

    摘要翻译: 本发明的目的是提供一种多晶薄膜,其包括中间层,其在保持高结晶取向的同时制成更薄,以防止由于膜的内部应力引起的基板翘曲。 根据本发明的多晶薄膜包括由依次层叠的第一层和第二层形成的中间层,并设置在金属基板上。 第一层具有岩盐晶体结构,第二层具有萤石晶体结构。

    IBAD APPARATUS AND IBAD METHOD
    5.
    发明申请
    IBAD APPARATUS AND IBAD METHOD 有权
    IBAD装置和IBAD方法

    公开(公告)号:US20120228130A1

    公开(公告)日:2012-09-13

    申请号:US13440509

    申请日:2012-04-05

    IPC分类号: C23C14/34

    摘要: An IBAD apparatus includes, a target, a sputter ion source irradiating the target with sputter ions to sputter some of constituent particles of the target, a film formation region in which a base material for depositing thereon the particles sputtered from the target is disposed, and an assist ion beam irradiation device irradiating assist ion beams from a direction oblique to the direction of a normal of the film formation surface of the base material disposed in the film formation region, where the sputter ion source includes a plurality of ion guns arranged so as to be able to irradiate the target from an end portion on one side to an end portion on the other side with sputter ion beams, and current values for generating the sputter ion beams of the plurality of ion guns are set respectively.

    摘要翻译: IBAD装置包括靶,溅射离子源,溅射离子用溅射离子溅射目标物的一些构成颗粒,其中设置用于沉积靶材溅射的颗粒的基底材料的成膜区域;以及 辅助离子束照射装置,从设置在成膜区域的基材的成膜面的法线方向倾斜的方向照射辅助离子束,其中溅射离子源包括多个离子枪, 能够从溅射离子束的一侧的端部向另一侧的端部照射目标物,分别设定用于产生多个离子枪的溅射离子束的电流值。