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公开(公告)号：US08223223B2
公开(公告)日：2012-07-17
申请号：US12636052
申请日：2009-12-11
CPC分类号： H04N5/23248 , H04N5/23232 , H04N5/2353 , H04N5/265
摘要： An image sensing apparatus senses first and second images, and produces a merged image by merging the first and second images together. An exposure time for the second image is longer than an exposure time for the first image. By sensing the first image before the second image, the first image is prevented from being sensed during a camera-shake-increase period starting a long time after the input of a image-sensing-start instruction. Also, by waiting for an image-sensing standby time to elapse before sensing the first image, the first image can be sensed during a period of a particularly small camera shake.
摘要翻译： 图像感测装置感测第一和第二图像，并且通过将第一和第二图像合并在一起而产生合并的图像。 第二图像的曝光时间长于第一图像的曝光时间。 通过感测第二图像之前的第一图像，在输入图像感测开始指令之后的较长时间开始的相机抖动增加期间，防止第一图像被感测。 此外，通过等待在感测第一图像之前经过的图像感测待机时间，可以在特别小的相机抖动的时段期间感测第一图像。
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公开(公告)号：US20100302595A1
公开(公告)日：2010-12-02
申请号：US12787860
申请日：2010-05-26
申请人： Akihiko Yamada , Yasuhiro Iijima , Kazuhiro Kojima
发明人： Akihiko Yamada , Yasuhiro Iijima , Kazuhiro Kojima
CPC分类号： H04N1/00002 , G06K9/4642 , G09G5/14 , H04N1/00005 , H04N1/00037 , H04N1/00082 , H04N1/00453 , H04N1/212 , H04N5/23293 , H04N5/783 , H04N21/4147 , H04N21/4223 , H04N21/4325 , H04N21/44008 , H04N21/440263 , H04N21/8153 , H04N2101/00
摘要： An image reproducing apparatus includes a reproduction control unit which selects n out of given m input images as n output images by evaluating similarity among different input images of the m input images, and outputs the n output images onto a reproduction medium (m is an integer of two or larger, n is an integer of one or larger, and m>n holds).
摘要翻译： 图像再现装置包括：再现控制单元，其通过评估m个输入图像的不同输入图像之间的相似度，将给定m个输入图像中的n选择为n个输出图像，并将n个输出图像输出到再现介质上（m是整数 为2以上的整数，n为1以上的整数，m> n成立）。
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公开(公告)号：US20100149350A1
公开(公告)日：2010-06-17
申请号：US12636052
申请日：2009-12-11
IPC分类号： H04N5/228
CPC分类号： H04N5/23248 , H04N5/23232 , H04N5/2353 , H04N5/265
摘要： An image sensing apparatus senses first and second images, and produces a merged image by merging the first and second images together. An exposure time for the second image is longer than an exposure time for the first image. By sensing the first image before the second image, the first image is prevented from being sensed during a camera-shake-increase period starting a long time after the input of a image-sensing-start instruction. Also, by waiting for an image-sensing standby time to elapse before sensing the first image, the first image can be sensed during a period of a particularly small camera shake.
摘要翻译： 图像感测装置感测第一和第二图像，并且通过将第一和第二图像合并在一起而产生合并的图像。 第二图像的曝光时间长于第一图像的曝光时间。 通过感测第二图像之前的第一图像，在输入图像感测开始指令之后的较长时间开始的相机抖动增加期间，防止第一图像被感测。 此外，通过等待在感测第一图像之前经过的图像感测待机时间，可以在特别小的相机抖动的时段期间感测第一图像。
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4.发明授权公开(公告)号：US07220315B2
公开(公告)日：2007-05-22
申请号：US10628459
申请日：2003-07-29
申请人： Yasuhiro Iijima
发明人： Yasuhiro Iijima
CPC分类号： C23C14/3442 , C23C14/08 , C23C14/087 , C23C14/46 , H01L39/2448 , H01L39/2461
摘要： A production method for a polycrystalline thin film, depositing polycrystalline thin film on a polycrystalline substrate. The temperature of the polycrystalline substrate is set within a range from 150° C. to 250° C., the ion beam energy of the ion beam is adjusted within a range from 175 eV to 225 eV, and the ion beam is irradiated at an angle of incidence from 50° to 60° with respect to the normal for the film forming surface of the polycrystalline substrate. By this production method, the grain boundary inclination angle, formed by identical crystal axes of the crystal grains along a plane parallel to the film forming surface of the polycrystalline substrate, is limited to 20° or less, and a polycrystalline thin film having a strong crystal orientation can be stably produced.
摘要翻译： 一种用于多晶薄膜的制造方法，在多晶基板上沉积多晶薄膜。 将多晶基板的温度设定在150℃〜250℃的范围内，将离子束的离子束能量调整为175eV〜225eV的范围，将离子束照射在 入射角相对于多晶衬底的成膜表面的法线为50°至60°。 通过该制造方法，将晶粒沿着与多晶基板的成膜面平行的平面的晶粒的相同晶轴形成的晶界倾斜角限制在20°以下，具有强的多晶薄膜 可以稳定地制造晶体取向。
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公开(公告)号：US07006354B2
公开(公告)日：2006-02-28
申请号：US10259386
申请日：2002-09-30
IPC分类号： H05K7/20
CPC分类号： H01L23/433 , H01L23/373 , H01L23/427 , H01L2224/73253 , H01L2924/01025 , H01L2924/10253 , H01L2924/16152 , Y10T428/12528 , H01L2924/00
摘要： A heat radiating structure for an electronic device, for cooling an electronic part by transferring the heat generated in the electronic part to a heat spreader has a grading layer, which is located between the electronic part and the heat spreader and having a coefficient of thermal expansion varied such that it is substantially equal or approximate at its portion on the electronic part side to the coefficient of thermal expansion of the electronic part and such that it is substantially equal or approximate at its portion on the heat spreader side to the coefficient of thermal expansion of the heat spreader.
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6.发明授权公开(公告)号：US06716796B1
公开(公告)日：2004-04-06
申请号：US09857912
申请日：2001-06-11
申请人： Yasuhiro Iijima , Mariko Kimura , Takashi Saito
发明人： Yasuhiro Iijima , Mariko Kimura , Takashi Saito
IPC分类号： H01B1200
CPC分类号： H01L39/2461 , C30B23/002 , C30B23/02 , C30B29/22
摘要： A polycrystalline thin film B consisting mainly of oxide crystal grains 20 which have a crystal structure of a Type C rare earth oxide represented by one of the formulas Y2O3, Sc2O3, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb2O3, Dy2O3, Ho2O3, Er2O3, Yb2O3, Lu2O3, and Pm2O3 formed on a film forming surface of a polycrystalline substrate A wherein grain boundary inclination angles between the corresponding crystal axes of different crystal grains in the polycrystalline thin film along a plane parallel to the film forming surface of the polycrystalline substrate are controlled within 30 degrees.
摘要翻译： 由氧化物晶粒20主要组成的多晶薄膜B，其具有由式Y 2 O 3，Sc 2 O 3，Nd 2 O 3，Sm 2 O 3，Eu 2 O 3，Gd 2 O 3，Tb 2 O 3，Dy 2 O 3，Ho 2 O 3，Er 2 O 3， 在多晶衬底A的成膜表面上形成的Yb2O3，Lu2O3和Pm2O3，其中多晶薄膜中沿与多晶衬底的成膜表面平行的平面中的不同晶粒的相应晶轴之间的晶界倾角为 控制在30度以内。
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7.发明授权公开(公告)号：US06632539B1
公开(公告)日：2003-10-14
申请号：US09890052
申请日：2001-07-25
申请人： Yasuhiro Iijima , Mariko Kimura , Takashi Saitoh
发明人： Yasuhiro Iijima , Mariko Kimura , Takashi Saitoh
IPC分类号： B32B1504
CPC分类号： H01L39/2461 , C01G25/00 , C01G27/00 , C23C14/08 , C23C14/3414 , C23C18/1216 , C23C18/14 , C30B23/002 , C30B29/22 , Y10S428/93 , Y10S505/731
摘要： The polycrystalline thin film is made of a composite oxide of a cubic crystal system which has a pyrochlore type crystalline structure of a composition represented as either AZrO or AHfO (A in the formula represents a rare earth element selected from among Y, Yb, Tm, Er, Ho, Dy, Eu, Gd, Sm, Nd, Pr, Ce and La) formed on the film forming surface of the polycrystalline substrate, wherein the grain boundary misalignment angle between the same crystal axes of different crystal grains in the polycrystalline thin film along a plane parallel to the film forming surface of the polycrystalline substrate are controlled within 30°.
摘要翻译： 多晶薄膜由立方晶系的复合氧化物制成，其具有以AZrO或AHfO表示的组成的烧绿石型晶体结构（式中，A表示选自Y，Yb，Tm， 形成在多晶衬底的成膜表面上的Er，Ho，Dy，Eu，Gd，Sm，Nd，Pr，Ce和La），其中多晶薄片中不同晶粒的相同晶轴之间的晶界偏移角 沿着与多晶基板的成膜表面平行的平面的膜被控制在30°以内
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8.发明授权Chemical vapor deposition reactor and method of producing oxide superconductive conductor using the same 失效化学气相沉积反应器及使用其制造氧化物超导导体的方法
公开(公告)号：US5908507A
公开(公告)日：1999-06-01
申请号：US889178
申请日：1997-07-07
申请人： Kazunori Onabe , Nobuyuki Sadakata , Takashi Saito , Osamu Kohno , Taichi Yamaguchi , Yasuhiro Iijima , Shigeo Nagaya , Naoki Hirano
发明人： Kazunori Onabe , Nobuyuki Sadakata , Takashi Saito , Osamu Kohno , Taichi Yamaguchi , Yasuhiro Iijima , Shigeo Nagaya , Naoki Hirano
IPC分类号： C30B25/08 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/54 , C30B25/14 , H01B13/00 , H01L39/24 , C23C16/00
CPC分类号： C23C16/45563 , C23C16/408 , C23C16/4412 , C23C16/455 , C23C16/45561 , C23C16/545 , H01L39/2441 , Y02T50/67
摘要： A chemical vapor deposition (CVD) reactor for forming a film at the surface of a base material, and a production method for an oxide superconductive conductor using this CVD reactor, are disclosed. The CVD reactor is provided with a processing chamber, a material gas supply mechanism which supplies material gas into the processing chamber, and a gas exhaust mechanism which vents gas from inside the processing chamber. The processing chamber is divided by partitions into a base material introduction section, a reaction chamber, and a base material guide-out section. A base material transit opening is formed in each partition, and a base material conveyance region is formed inside the reaction chamber passing through the base material introduction section, the reaction chamber and the base material guide-out section. The material gas supply mechanism is provided with a material gas supply source and a gas disperser and is connected to the material gas supply source. The gas exhaust mechanism is equipped with gas exhaust holes provided at both sides of the base material conveyance region opposite the side where the gas diffuser is disposed, and with a gas venter connected to the gas exhaust holes. The gas diffuser and the gas exhaust holes oppose each other with the base material conveyance region therebetween. The CVD reactor may be used to produce an oxide superconductive conductor by forming a superconductive layer at the surface of a base material while adjusting the flow of gas around the base material.
摘要翻译： 公开了一种用于在基材表面形成膜的化学气相沉积（CVD）反应器和使用该CVD反应器的氧化物超导体的制造方法。 CVD反应器设置有处理室，将材料气体供给到处理室中的原料气体供给机构，以及从处理室内部排出气体的排气机构。 处理室由隔板分割成基材导入部，反应室和基材导出部。 在每个隔板中形成有基材输送口，在通过基材导入部，反应室和基材导出部的反应室内部形成有基材输送区域。 原料气体供给机构设有原料气体供给源和气体分散器，与原料气体供给源连接。 排气机构配置有与设置有气体扩散器的一侧相对的基材输送区域的两侧设置有排气孔，并且具有与排气孔连接的气体排气孔。 气体扩散器和排气孔之间的基体输送区域彼此相对。 CVD反应器可用于通过在基材表面形成超导层，同时调节基体材料周围的气体流动来生产氧化物超导导体。
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9.发明授权
公开(公告)号：US5650378A
公开(公告)日：1997-07-22
申请号：US510772
申请日：1995-08-03
申请人： Yasuhiro Iijima , Nobuo Tanabe
发明人： Yasuhiro Iijima , Nobuo Tanabe
CPC分类号： C23C14/083 , C23C14/46 , H01L39/2461 , Y02T50/67 , Y10S505/731 , Y10S505/732
摘要： The present invention relates to a polycrystalline thin film deposit acting as a substrate material composed of grains of a cubic structure in which the intergranular misorientation, defined as the orientation difference between the a-axes (or b-axes) of the neighboring grains, is less than 30 degrees. Such a substrate base is produced by depositing a target material on a base material by sputtering while irradiating the substrate base with ion beams at an oblique angle to the base. The preferred range of the oblique angle is between 40 to 60 degrees. Examples are presented of application of such textured polycrystalline substrate base for the production of superconducting oxide thin layer of outstanding superconducting properties.
摘要翻译： 本发明涉及作为由立方结构的晶粒组成的基板材料的多晶薄膜沉积物，其中定义为相邻晶粒的a轴（或b轴）之间的取向差异的晶间误差为 小于30度。 通过溅射将目标材料沉积在基材上，同时以与基底成倾斜角的离子束照射基板基底来制造这样的基板基板。 斜角的优选范围为40至60度。 这些织构化的多晶衬底基底用于生产优异的超导特性的超导氧化物薄层的实例。
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公开(公告)号：US08373776B2
公开(公告)日：2013-02-12
申请号：US12636171
申请日：2009-12-11
CPC分类号： H04N5/217 , H04N5/235 , H04N5/2355
摘要： An image processing apparatus outputs an output image by synthesizing a first image obtained by shooting, a second image obtained by shooting with an exposure time longer than the exposure time of the first image, and a third image obtained by reducing noise in the first image. The image processing apparatus has a noise reduction processing control portion which controls the contents of image processing for obtaining the third image from the first image according to the noise level in the first image.
摘要翻译： 图像处理装置通过合成通过拍摄获得的第一图像，通过拍摄获得的第二图像以比第一图像的曝光时间更长的曝光时间和通过减少第一图像中的噪声获得的第三图像来输出输出图像。 图像处理装置具有噪声降低处理控制部分，其根据第一图像中的噪声水平控制从第一图像获得第三图像的图像处理的内容。
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