Method of and apparatus for measuring pattern profile
    1.
    发明授权
    Method of and apparatus for measuring pattern profile 失效
    用于测量图案的方法和装置

    公开(公告)号:US5161201A

    公开(公告)日:1992-11-03

    申请号:US651796

    申请日:1991-02-07

    IPC分类号: G01Q30/02 G01B15/00 G01Q30/04

    CPC分类号: G01B15/00

    摘要: A pattern profile measuring method and apparatus for measuring the profile of a measuring portion of a pattern of a specimen placed on a specimen stage by controlling a deflector of a scanning electron microscope capable of setting a desired inclination angle of one of the specimen stage and an electron optical column, applying an electron beam to the measuring portion of the specimen, and image processing a secondary electron signal from the measuring portion. The method comprises: a first step of calculating the distance at the bottom portion of the measuring portion of the pattern by image processing the secondary electron signal when the electron beam is applied to the measuring portion at an inclination angle of zero; a second step of obtaining the number of pixels at a taper portion of the measuring portion of the pattern by image processing the secondary electron signal when the electron beam is applied to the measuring portion at a first predetermined inclination angle; a third step of obtaining the number of pixels at the taper portion by image processing the secondary electron signal when the electron beam is applied to the measuring portion at a second predetermined inclination angle different from the first inclination angle; a fourth step of calculating the taper angle and depth of the pattern in accordance with the numbers of pixels of the taper portion obtained at the second and third steps and the first and second predetermined inclination angles; and a fifth step of obtaining the profile of the taper portion in accordance with the strength change of the secondary electron signal from the taper portion.

    Method and apparatus for measuring pattern dimension
    2.
    发明授权
    Method and apparatus for measuring pattern dimension 失效
    测量图形尺寸的方法和装置

    公开(公告)号:US5159643A

    公开(公告)日:1992-10-27

    申请号:US651795

    申请日:1991-02-07

    IPC分类号: G01Q80/00 G01B15/00

    CPC分类号: G01B15/00

    摘要: A pattern dimension measuring method for measuring the dimension of a measuring portion of a pattern of a specimen placed on a specimen stage by controlling a deflector of a scan type electron microscope capable of setting a desired inclination angle of the specimen stage a lens barrel, applying an electron beam to the measuring portion of the specimen, and image processing a secondary electron signal from the measuring portion, the method comprising: a first step of calculating the distance between top edges of the measuring portion of the pattern by image processing the secondary electron signal when the electron beam is applied to the measuring portion at an inclination angle of zero; a second step of obtaining the number of pixels at a taper portion of the measuring portion of the pattern by image processing the secondary electron signal when the electron beam is applied to the measuring portion at a first predetermined inclination angle which allows to observe the bottom edges; a third step of obtaining the number of pixels at the taper portion by image processing the secondary electron signal when the electron beam is applied to the measuring portion at a second predetermined inclination angle different from the first inclination angle which allows to observe the bottom edges; a fourth step of calculating the taper angle and height of the pattern in accordance with the numbers of pixels of the taper portion obtained at the second and third steps and the first and second predetermined inclination angles; and a fifth step of calculating the distance between the bottom edges of the pattern and the difference ratio between the top edge and bottom edge distances in accordance with the results calculated at the fourth step.

    Automatic focusing method for scanning electron microscopy
    3.
    发明授权
    Automatic focusing method for scanning electron microscopy 失效
    扫描电子显微镜自动聚焦法

    公开(公告)号:US5302829A

    公开(公告)日:1994-04-12

    申请号:US003472

    申请日:1993-01-12

    CPC分类号: H01J37/28 H01J37/21

    摘要: An automatic focusing method for scanning electron microscopy. A scanning electron microscope is set in a low magnification mode to detect a taper portion of an object to be observed. The beam scanning whose direction is perpendicular to the taper portion is effected whenever objective lens control condition is changed at a first pitch, and the secondary electron signals obtained under these conditions are converted into video signals. The video signals are differential smoothed to calculate a sum of video signal absolute values. On the basis of the sum of the absolute values, an optimum objective lens control condition in the low magnification mode can be obtained. Sequentially, the microscope is set to a high magnification mode, and the objective lens control condition is further changed at a second pitch within a predetermined range with the optimum control condition in the low magnification mode as the center of the range. The beam scanning whose direction is perpendicular to the taper portion is effected. In the same way as in the low magnification mode, the secondary electrons signal obtained under these conditions are converted into video signals to obtain the optimum objective lens control condition in the high magnification mode. The optimum control condition obtained in the high magnification mode is determined as the control condition to determine the focal distance of the objective lens.

    摘要翻译: 一种扫描电子显微镜的自动对焦方法。 将扫描型电子显微镜设定为低倍率模式,以检测被观察物体的锥形部分。 当物镜控制条件以第一节距改变时,其方向垂直于锥形部分的光束扫描实现,并且在这些条件下获得的二次电子信号被转换为视频信号。 视频信号被差分平滑以计算视频信号绝对值之和。 基于绝对值的和,可以获得低倍率模式下的最佳物镜控制条件。 接着,将显微镜设定为高放大倍数模式,并且以低放大倍数模式的最佳控制条件为范围,以预定范围内的第二间距进一步改变物镜控制条件。 实现了与锥形部分垂直的光束扫描。 以与低倍率模式相同的方式,在这些条件下获得的二次电子信号被转换为视频信号,以在高倍率模式下获得最佳物镜控制条件。 确定在高倍率模式下获得的最佳控制条件作为确定物镜焦距的控制条件。

    Defect inspecting apparatus for semiconductor wafer
    4.
    发明授权
    Defect inspecting apparatus for semiconductor wafer 有权
    半导体晶圆缺陷检查装置

    公开(公告)号:US07512501B2

    公开(公告)日:2009-03-31

    申请号:US11889765

    申请日:2007-08-16

    IPC分类号: G01B5/28 G01B5/30

    CPC分类号: G01N21/95607 G01N21/8851

    摘要: A defect inspecting apparatus comprising: an inspection region dividing section which divides a defect inspection region of a wafer on which a circuit pattern is formed into a plurality of inspection subregions; a pattern density calculating section which calculates the pattern density of each of the inspection subregions on the basis of design data of the circuit pattern; an inspection execution region and sensitivity rank setting section which assigns a sensitivity rank based on the pattern density to a plurality of inspection execution regions, each including a plurality of the inspection subregions; and a defect inspecting section which sets an inspection parameter on the basis of sensitivity ranks of the inspection execution regions and inspects the inspection execution regions for a defect.

    摘要翻译: 一种缺陷检查装置,包括:检查区域分割部,其将形成有电路图案的晶片的缺陷检查区域分割成多个检查次数; 图案密度计算部,其基于所述电路图案的设计数据来计算所述检查子区域中的图案密度; 检查执行区域和灵敏度等级设置部分,其将多个检查执行区域分配给多个检查执行区域,每个检查执行区域包括多个检查子区域; 以及缺陷检查部,其根据检查执行区域的灵敏度等级设定检查参数,并检查检查执行区域的缺陷。

    Defect inspecting apparatus, defect inspecting method, semiconductor device manufacturing system, and semiconductor device manufacturing method
    5.
    发明申请
    Defect inspecting apparatus, defect inspecting method, semiconductor device manufacturing system, and semiconductor device manufacturing method 有权
    缺陷检查装置,缺陷检查方法,半导体装置制造系统和半导体装置制造方法

    公开(公告)号:US20080052021A1

    公开(公告)日:2008-02-28

    申请号:US11889765

    申请日:2007-08-16

    IPC分类号: G06F19/00

    CPC分类号: G01N21/95607 G01N21/8851

    摘要: A defect inspecting apparatus comprising: an inspection region dividing section which divides a defect inspection region of a wafer on which a circuit pattern is formed into a plurality of inspection subregions; a pattern density calculating section which calculates the pattern density of each of the inspection subregions on the basis of design data of the circuit pattern; an inspection execution region and sensitivity rank setting section which assigns a sensitivity rank based on the pattern density to a plurality of inspection execution regions, each including a plurality of the inspection subregions; and a defect inspecting section which sets an inspection parameter on the basis of sensitivity ranks of the inspection execution regions and inspects the inspection execution regions for a defect.

    摘要翻译: 1.一种缺陷检查装置,包括:检查区域分割部,其将形成有电路图案的晶片的缺陷检查区域分割成多个检查次数; 图案密度计算部,其基于所述电路图案的设计数据来计算所述检查子区域中的图案密度; 检查执行区域和灵敏度等级设置部分,其将多个检查执行区域分配给多个检查执行区域,每个检查执行区域包括多个检查子区域; 以及缺陷检查部,其根据检查执行区域的灵敏度等级设定检查参数,并检查检查执行区域的缺陷。

    Substrate cross-section observing apparatus
    6.
    发明授权
    Substrate cross-section observing apparatus 失效
    基板横截面观测装置

    公开(公告)号:US5576542A

    公开(公告)日:1996-11-19

    申请号:US352223

    申请日:1994-12-08

    申请人: Yasuhiro Kaga

    发明人: Yasuhiro Kaga

    IPC分类号: H01J37/28 H01J37/26

    CPC分类号: H01J37/28

    摘要: Even if an observing charged beam is irradiated upon an observation cross section obliquely from above, it is possible to obtain an observation image equivalent to that obtained when the observing charged beam is irradiated thereupon vertically from above. A wafer to be observed is mounted on the stage. The stage is moved by the stage control section on the basis of coordinate data given by the coordinate inputting section to such a position that an observed position of the wafer can be located just under the ion beam irradiating unit. The ion beam of the ion beam irradiating unit is irradiated upon the wafer surface vertically to form an observation cross section. On the other hand, an electron beam is irradiated from the electron beam irradiating unit upon the observation cross section obliquely from above at an inclination angle with respect to the ion beam irradiating unit. The secondary electrons emitted from the wafer surface are detected by the detector to generate video signals. These video signals are corrected on the basis of the inclination angle, and then converted into image signals equivalent to those obtained when the observation cross section is observed in the vertical direction from above.

    摘要翻译: 即使观察带电光束从上方倾斜观察横截面照射,也可以获得与观察带电光束从上方垂直照射的观察图像相当的观察图像。 要观察的晶片安装在平台上。 基于由坐标输入部分给出的坐标数据,舞台控制部分被移动到这样一个位置,即,晶片的观察位置可以位于离子束照射单元正下方。 离子束照射单元的离子束垂直地照射在晶片表面上以形成观察横截面。 另一方面,电子束从电子束照射单元以相对于离子束照射单元倾斜地从上方倾斜观察横截面照射。 从晶片表面发射的二次电子被检测器检测,以产生视频信号。 这些视频信号基于倾斜角度被校正,然后被转换为与从上方沿垂直方向观察观察截面时获得的图像信号相当的图像信号。