公开(公告)号：US5817172A

公开(公告)日：1998-10-06

申请号：US739758

申请日：1996-10-29

申请人： Yasuji Yamada ,  Yusuki Niiori ,  Yoshiaki Ito ,  Yutaka Yoshida ,  Izumi Hirabayashi

发明人： Yasuji Yamada ,  Yusuki Niiori ,  Yoshiaki Ito ,  Yutaka Yoshida ,  Izumi Hirabayashi

IPC分类号： C01G1/00 ,  C01G3/00 ,  C30B9/00 ,  C30B13/00 ,  C30B15/02 ,  C30B19/04 ,  C30B29/22 ,  H01B12/00 ,  H01B13/00 ,  C30B13/26

CPC分类号： C30B29/225 ,  C30B13/00 ,  C30B9/00

摘要： For the solution growth, a solvent is used which is composed of a mixture of an oxide containing at least one member of those elements which constitute the oxide crystal and a halide containing at least one member of those elements which constitute the oxide crystal. The process enables the temperature of crystal growth to be lowered to a significant extent, avoids inclusions such as impure anionic elements from getting intruded into the oxide crystal, while retaining adequate crystal growth through solution growth, and affords, in spite of an atmospheric mode of crystal growth and with the pinning force of magnetic flux used to advantage, the same level of beneficial effects as in a mode of crystal growth at a low oxygen pressure.

摘要翻译： 对于溶液生长，使用由包含构成氧化物晶体的那些元素中的至少一个元素的氧化物和包含构成氧化物晶体的元素的至少一种元素的卤化物的混合物组成的溶剂。 该方法使晶体生长的温度能够显着降低，避免诸如不纯的阴离子元素等夹杂物侵入到氧化物晶体中，同时通过溶液生长保持足够的晶体生长，并且尽管存在大气模式 晶体生长和磁通量的钉扎力有利，与低氧压力下的晶体生长模式相同程度的有益效果。