公开(公告)号：US06985276B2

公开(公告)日：2006-01-10

申请号：US10490059

申请日：2002-03-20

申请人： Yasujiro Taguchi ,  Yoshio Kaneko ,  Yoshinori Tokura ,  Naoto Nagaosa

发明人： Yasujiro Taguchi ,  Yoshio Kaneko ,  Yoshinori Tokura ,  Naoto Nagaosa

IPC分类号： G02F1/09

CPC分类号： G11C13/06 ,  G02F1/0036 ,  G11B11/10586

摘要： A magnetooptic element whose size is essentially that of a lattice, namely several angstroms in size of magnetic material and which at the same time has its exhibiting magnetooptic effect detectable is provided along with a magnetooptic disk, a memory device and a magnetooptical picture or image display with a storage capacity of several terabits per square inch or more, each using such a magnetooptic element. The magnetooptic element utilizes a gigantic effective magnetic filed based on a spin chirality formed by geometrically configuring the spin orientation and crystallographic structure of a certain solid material. The solid material exhibiting the spin chirality may be such as a pyrochlore type oxide compound whose chemical composition is represented by chemical formula: A2B2O7 where A is a rare-earth element and B is a transition metal, or a pyrochlore type oxide compound whose chemical composition is represented by chemical formula: (A1-xCx)2B2O7 where A is a rare-earth element, C is an alkali-earth metallic element and B is a transition metal and where 0

摘要翻译： 尺寸基本上是格子的磁光元件，即磁性材料尺寸的几埃，同时具有可检测的磁光效应的磁光元件与磁光盘，存储器件和磁光图像或图像显示一起提供 具有几兆比特每平方英寸或更多的存储容量，每个使用这种磁光元件。 磁光元件利用基于通过几何构造某些固体材料的旋转取向和晶体结构形成的自旋手性的巨大的有效磁场。 表现出旋转手性的固体材料可以是其化学组成由以下化学式表示的烧绿石型氧化物化合物：A 2 B 2 N 2 O 7 / SUB>其中A是稀土元素，B是过渡金属，或者其化学成分由化学式表示的烧绿石型氧化物化合物：（A 1-x C x < 其中A是稀土元素，C是碱土金属元素，B是碱土金属元素，B是 过渡金属，其中0

公开(公告)号：US20110253204A1

公开(公告)日：2011-10-20

申请号：US13081878

申请日：2011-04-07

申请人： Wataru Koshibae ,  Masao Nakamura ,  Masashi Kawasaki ,  Naoto Nagaosa ,  Yasujiro Taguchi ,  Yoshinori Tokura ,  Nobuo Furukawa

发明人： Wataru Koshibae ,  Masao Nakamura ,  Masashi Kawasaki ,  Naoto Nagaosa ,  Yasujiro Taguchi ,  Yoshinori Tokura ,  Nobuo Furukawa

IPC分类号： H01L31/02

CPC分类号： H01L31/0264 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/18 ,  H01L51/0084 ,  H01L51/0087 ,  H01L51/4206 ,  Y02E10/544 ,  Y02E10/549

摘要： A solar cell 1 has a p-n junction structure between a first solid material layer 3 comprising an insulator or a semiconductor and a second solid material layer 5 comprising an insulator or a semiconductor of a type different from the type of the first solid material layer 3, in which structure a Mott insulator or a Mott semiconductor is used as a solid material of at least one of the layers.

摘要翻译： 太阳能电池1在包括绝缘体或半导体的第一固体材料层3和包括绝缘体的第二固体材料层5之间具有pn结结构，或者与第一固体材料层3的类型不同的半导体， 其中使用莫特绝缘体或莫特半导体作为至少一层的固体材料的结构。

公开(公告)号：US07978047B2

公开(公告)日：2011-07-12

申请号：US11990774

申请日：2006-08-08

申请人： Yasunari Hosoi ,  Shigeo Ohnishi ,  Yasushi Ogimoto ,  Takashi Oka ,  Naoto Nagaosa ,  Yoshinori Tokura

发明人： Yasunari Hosoi ,  Shigeo Ohnishi ,  Yasushi Ogimoto ,  Takashi Oka ,  Naoto Nagaosa ,  Yoshinori Tokura

IPC分类号： H01C7/10

CPC分类号： H01C7/1013 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/31 ,  H01C7/115 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

摘要： A variable resistance element comprises a variable resistor of strongly-correlated material sandwiched between two metal electrodes, and the electric resistance between the metal electrodes varies when a voltage pulse is applied between the metal electrodes. Such a switching operation as the ratio of electric resistance between low and high resistance states is high can be attained by designing the metal electrodes and variable resistor appropriately based on a definite switching operation principle. Material and composition of the first electrode and variable resistor are set such that metal insulator transition takes place on the interface of the first electrode in any one of two metal electrodes and the variable resistor by applying a voltage pulse. Two-phase coexisting phase of metal and insulator phases can be formed in the vicinity of the interface between the variable resistor and first electrode by the work function difference between the first electrode and variable resistor.

摘要翻译： 可变电阻元件包括夹在两个金属电极之间的强相关材料的可变电阻器，并且当在金属电极之间施加电压脉冲时，金属电极之间的电阻变化。 通过根据确定的开关动作原理适当设计金属电极和可变电阻器，能够实现低电阻状态和高电阻状态之间的电阻比的切换操作。 第一电极和可变电阻器的材料和组成被设置为使得通过施加电压脉冲在两个金属电极中的任一个中的第一电极的接口和可变电阻器上发生金属绝缘体转变。 可以通过第一电极和可变电阻器之间的功函数差，在可变电阻器和第一电极之间的界面附近形成金属和绝缘体相的两相共存相。

公开(公告)号：US20090231083A1

公开(公告)日：2009-09-17

申请号：US11990774

申请日：2006-08-08

申请人： Yasunari Hosoi ,  Shigeo Ohnishi ,  Yasushi Ogimoto ,  Takashi Oka ,  Naoto Nagaosa ,  Yoshinori Tokura

发明人： Yasunari Hosoi ,  Shigeo Ohnishi ,  Yasushi Ogimoto ,  Takashi Oka ,  Naoto Nagaosa ,  Yoshinori Tokura

IPC分类号： H01C7/10

CPC分类号： H01C7/1013 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/31 ,  H01C7/115 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

摘要： A variable resistance element comprises a variable resistor of strongly-correlated material sandwiched between two metal electrodes, and the electric resistance between the metal electrodes varies when a voltage pulse is applied between the metal electrodes. Such a switching operation as the ratio of electric resistance between low and high resistance states is high can be attained by designing the metal electrodes and variable resistor appropriately based on a definite switching operation principle. Material and composition of the first electrode and variable resistor are set such that metal insulator transition takes place on the interface of the first electrode in any one of two metal electrodes and the variable resistor by applying a voltage pulse. Two-phase coexisting phase of metal and insulator phases can be formed in the vicinity of the interface between the variable resistor and first electrode by the work function difference between the first electrode and variable resistor.

摘要翻译： 可变电阻元件包括夹在两个金属电极之间的强相关材料的可变电阻器，并且当在金属电极之间施加电压脉冲时，金属电极之间的电阻变化。 通过根据确定的开关动作原理适当设计金属电极和可变电阻器，能够实现低电阻状态和高电阻状态之间的电阻比的切换操作。 第一电极和可变电阻器的材料和组成被设置为使得通过施加电压脉冲在两个金属电极中的任一个中的第一电极的接口和可变电阻器上发生金属绝缘体转变。 可以通过第一电极和可变电阻器之间的功函数差，在可变电阻器和第一电极之间的界面附近形成金属和绝缘体相的两相共存相。

公开(公告)号：US07037807B1

公开(公告)日：2006-05-02

申请号：US10746050

申请日：2003-12-24

申请人： Shuichi Murakami ,  Naoto Nagaosa ,  Shoucheng Zhang

发明人： Shuichi Murakami ,  Naoto Nagaosa ,  Shoucheng Zhang

IPC分类号： H01L21/00 ,  H01L21/326 ,  H01L21/479

CPC分类号： H01L29/66984

摘要： A device and a method for generating an electric-field-induced spin current are disclosed. A highly spin-polarized electric current is generated using a semiconductor structure and an applied electric field across the semiconductor structure. The semiconductor structure can be a hole-doped semiconductor having finite or zero bandgap or an undoped semiconductor of zero bandgap. In one embodiment, a device for injecting spin-polarized current into a current output terminal includes a semiconductor structure including first and second electrodes, along a first axis, receiving an applied electric field and a third electrode, along a direction perpendicular to the first axis, providing the spin-polarized current. The semiconductor structure includes a semiconductor material whose spin orbit coupling energy is greater than room temperature (300 Kelvin) times the Boltzmann constant. In one embodiment, the semiconductor structure is a hole-doped semiconductor structure, such as a p-type GaAs semiconductor layer.

摘要翻译： 公开了一种用于产生电场自旋电流的装置和方法。 使用跨半导体结构的半导体结构和施加的电场产生高度自旋极化的电流。 半导体结构可以是具有有限或零带隙的空穴掺杂半导体或零带隙的未掺杂半导体。 在一个实施例中，用于将自旋极化电流注入电流输出端子的装置包括：沿着第一轴线的第一和第二电极沿着垂直于第一轴线的方向接收施加的电场和第三电极的半导体结构 ，提供自旋极化电流。 半导体结构包括其自旋轨道耦合能量大于室温（300开尔文）倍于玻尔兹曼常数的半导体材料。 在一个实施例中，半导体结构是诸如p型GaAs半导体层的空穴掺杂半导体结构。