公开(公告)号：US08263432B2

公开(公告)日：2012-09-11

申请号：US11798800

申请日：2007-05-17

Applicant: Ching-Hohn Lien ,  Cheng-Tsung Kuo ,  Jun-Nan Lin ,  Jie-An Zhu ,  Li-Yun Zhang ,  Wei-Cheng Lien

Inventor： Ching-Hohn Lien ,  Cheng-Tsung Kuo ,  Jun-Nan Lin ,  Jie-An Zhu ,  Li-Yun Zhang ,  Wei-Cheng Lien

IPC: H01L21/02

CPC classification number: H01C7/1006 ,  H01C7/108 ,  H01C7/112 ,  H01C7/115 ,  H01C7/18 ,  H01L27/0288 ,  H01L28/20 ,  Y10T428/2985 ,  Y10T428/2989 ,  Y10T428/2991

Abstract: A material composition having a core-shell microstructure suitable for manufacturing a varistor having outstanding electrical properties, the core-shell microstructure of the material composition at least comprising a cored-structure made of a conductive or semi-conductive material and a shelled-structure made from a glass material to wrap the cored-structure, and electrical properties of the varistors during low temperature of sintering process can be decided and designated by precisely controlling the size of the grain of the cored-structure and the thickness and insulation resistance of the insulating layer of the shelled-structure of material composition.

Abstract translation: 具有适于制造具有优异电性能的变阻器的核 - 壳微结构的材料组合物，所述材料组合物的芯 - 壳微结构至少包括由导电或半导电材料制成的芯结构和制成的壳形结构 从玻璃材料包裹芯结构，并且可以通过精确控制芯结构的晶粒尺寸和绝缘体的厚度和绝缘电阻来确定和指定压敏电阻在低温烧结过程中的电性能 层的材料组成的贝壳结构。

公开(公告)号：US07583493B2

公开(公告)日：2009-09-01

申请号：US12024730

申请日：2008-02-01

Applicant: Shinsuke Tani ,  Mitsutoshi Kawamoto

Inventor： Shinsuke Tani ,  Mitsutoshi Kawamoto

IPC: H01G4/06

CPC classification number: H01G4/1227 ,  B32B18/00 ,  B82Y30/00 ,  C04B35/47 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3241 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/326 ,  C04B2235/3262 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3418 ,  C04B2235/36 ,  C04B2235/441 ,  C04B2235/5409 ,  C04B2235/5454 ,  C04B2235/6025 ,  C04B2235/6582 ,  C04B2235/663 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/79 ,  C04B2235/85 ,  H01C7/115 ,  H01C7/18 ,  H01G4/1281 ,  H01G4/30 ,  Y10T29/435

Abstract: A monolithic semiconductor ceramic capacitor includes semiconductor ceramic layers made of a semiconductor ceramic having a Sr site and a Ti site. The semiconductor ceramic satisfies the inequality 1.000

Abstract translation: 单片半导体陶瓷电容器包括由具有Sr部位和Ti部位的半导体陶瓷制成的半导体陶瓷层。 半导体陶瓷满足不等式1.000

公开(公告)号：US4692289A

公开(公告)日：1987-09-08

申请号：US753757

申请日：1985-07-11

Applicant: Detlev Hennings ,  Axel Schnell ,  Herbert Schreinemacher

Inventor： Detlev Hennings ,  Axel Schnell ,  Herbert Schreinemacher

IPC: H01C7/10 ,  C04B35/46 ,  H01C7/115 ,  C04B33/34

CPC classification number: H01C7/115

Abstract: A voltage-dependent resistor having a low operational field strength with a ceramic sintered body on the basis of a polycrystalline alkaline earth metal titanate doped with a small quantity of a metal oxide so as to produce an N-type conductivity, in which the sintered body comprises at its grain boundaries insulating layers formed by in-diffusion of at least a metal oxide or at least a metal oxide compound and comprises of an alkaline earth metal titanate having Perowskite structure of the general formula:(A.sub.1-x Ln.sub.x)TiO.sub.3 .multidot.yTiO.sub.2 or A(Ti.sub.1-x Me.sub.x)O.sub.3 .multidot.yTiO.sub.2wherein: A=alkaline earth metal; Ln=rare earth metal; Me=metal having a valency of 5 or more; 0.0005

Abstract translation: 基于掺杂有少量金属氧化物的多晶碱土金属钛酸盐以产生N型导电性的陶瓷烧结体，具有低操作场强的电压相关电阻器，其中烧结体 在其晶界处包括由至少金属氧化物或至少金属氧化物化合物的扩散形成的绝缘层，并且包含具有以下通式的具有贯穿孔雀石结构的碱土金属钛酸盐：（A1-xLnx）TiO3TiTiO2或A（ Ti1-xMex）O3xyTiO2其中：A =碱土金属; Ln =稀土金属; Me = 5价以上的金属; 0.0005

公开(公告)号：US4606116A

公开(公告)日：1986-08-19

申请号：US753836

申请日：1985-07-11

Applicant: Detlev Hennings ,  Axel Schnell ,  Herbert Schreinemacher

Inventor： Detlev Hennings ,  Axel Schnell ,  Herbert Schreinemacher

IPC: H01C7/10 ,  C04B35/46 ,  H01C7/115 ,  H01C17/00

CPC classification number: C04B35/47 ,  C01G23/006 ,  C04B35/462 ,  C04B35/6262 ,  C04B35/62675 ,  C04B35/63416 ,  H01C7/115 ,  C01P2002/54 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6582 ,  C04B2235/6588 ,  C04B2235/663 ,  C04B2235/768 ,  C04B2235/786 ,  Y10T29/49082 ,  Y10T29/49085

Abstract: A non-linear resistor having an operational field strength which optionally is formed as a VDR- or as an NTC-resistor having a ceramic sintered body on the basis of a polycrystalline alkaline earth metal titanate doped with a small quantity of a metal oxide so as to produce an N-type conductivity, in which the sintered body comprises at its grain boundaries insulating layers formed by re-oxidation of the sintered body and consists of an alkaline earth metal titanate having a Perowskite structure of the general formula(A.sub.1-x Ln.sub.x)TiO.sub.3.yTiO.sub.2 or A(Ti.sub.1-x Me.sub.x)O.sub.3.yTio.sub.2,wherein: A=alkaline earth metal; Ln=rare earth metal; Me=metal having a valency of 5 or more; 0.0005

Abstract translation: 一种具有工作场强的非线性电阻器，其可选地形成为VDR-或作为具有陶瓷烧结体的NTC电阻器，其基于掺杂有少量金属氧化物的多晶碱土金属钛酸盐，以便 以产生N型导电性，其中烧结体在其晶界处包含通过烧结体的再氧化形成的绝缘层，并且由具有通式（A1-xLnx）的Perowskite结构的碱土金属钛酸盐组成， TiO3yTiO2或A（Ti1-xMex）O3.yTio2，其中：A =碱土金属; Ln =稀土金属; Me = 5价以上的金属; 0.0005

公开(公告)号：US3386856A

公开(公告)日：1968-06-04

申请号：US41079464

申请日：1964-11-12

Applicant: PHILIPS CORP

Inventor： NOORLANDER WILLEM

IPC: C04B35/465 ,  C04B35/47 ,  H01B1/16 ,  H01C7/04 ,  H01C7/10 ,  H01C7/102 ,  H01C7/112 ,  H01C7/115 ,  H01G4/12

CPC classification number: H01C7/10 ,  C04B35/465 ,  C04B35/47 ,  H01B1/16 ,  H01C7/045 ,  H01C7/102 ,  H01C7/112 ,  H01C7/115 ,  H01G4/1281 ,  Y10T29/435

公开(公告)号：US3041189A

公开(公告)日：1962-06-26

申请号：US76384158

申请日：1958-09-29

Applicant: PLESSEY CO LTD

Inventor： MARTIN HERBERT JOHN

IPC: C04B35/468 ,  H01C7/115

CPC classification number: C04B35/4682 ,  H01C7/115

公开(公告)号：US20180257991A1

公开(公告)日：2018-09-13

申请号：US15908193

申请日：2018-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Wook ROH ,  Daejin YANG ,  Doh Won JUNG ,  Chan KWAK ,  Hyungjun KIM

IPC: C04B35/491 ,  C04B35/468 ,  C04B35/47 ,  C04B35/472 ,  C01G41/00 ,  C01G41/02 ,  C01G29/00 ,  C01G35/00 ,  C07C211/63 ,  C07C211/01

CPC classification number: C04B35/491 ,  C01G29/00 ,  C01G29/006 ,  C01G35/00 ,  C01G35/006 ,  C01G41/006 ,  C01G41/02 ,  C01P2002/22 ,  C01P2004/03 ,  C01P2004/24 ,  C01P2006/40 ,  C04B35/4682 ,  C04B35/47 ,  C04B35/472 ,  C04B35/475 ,  C04B35/495 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/3298 ,  C04B2235/5292 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/85 ,  C07C211/01 ,  C07C211/63 ,  H01C7/008 ,  H01C7/115 ,  H01G4/10 ,  H01G4/1227

Abstract: A dielectric material, a method of manufacturing thereof, and a dielectric device and an electronic device including the same. A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure and the two-dimensional layered material is represented by Chemical Formula 1.

公开(公告)号：US20080117561A1

公开(公告)日：2008-05-22

申请号：US12024730

申请日：2008-02-01

Applicant: Shinsuke TANI ,  Mitsutoshi KAWAMOTO

Inventor： Shinsuke TANI ,  Mitsutoshi KAWAMOTO

IPC: H01G4/06

CPC classification number: H01G4/1227 ,  B32B18/00 ,  B82Y30/00 ,  C04B35/47 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3241 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/326 ,  C04B2235/3262 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3418 ,  C04B2235/36 ,  C04B2235/441 ,  C04B2235/5409 ,  C04B2235/5454 ,  C04B2235/6025 ,  C04B2235/6582 ,  C04B2235/663 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/79 ,  C04B2235/85 ,  H01C7/115 ,  H01C7/18 ,  H01G4/1281 ,  H01G4/30 ,  Y10T29/435

Abstract: A monolithic semiconductor ceramic capacitor includes semiconductor ceramic layers made of a semiconductor ceramic having a Sr site and a Ti site. The semiconductor ceramic satisfies the inequality 1.000

Abstract translation: 单片半导体陶瓷电容器包括由具有Sr部位和Ti部位的半导体陶瓷制成的半导体陶瓷层。 半导体陶瓷满足不等式1.000

公开(公告)号：US20070273468A1

公开(公告)日：2007-11-29

申请号：US11709291

申请日：2007-02-22

Applicant: Suk-Joong Kang ,  Seong-Min Wang ,  Sung-Yoon Chung

Inventor： Suk-Joong Kang ,  Seong-Min Wang ,  Sung-Yoon Chung

IPC: H01C7/10 ,  C04B35/47 ,  B28B1/00

CPC classification number: H01C7/115 ,  C04B35/47 ,  C04B35/62655 ,  C04B2235/3217 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3272 ,  C04B2235/5436 ,  C04B2235/6022 ,  C04B2235/604 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6582 ,  C04B2235/663 ,  C04B2235/72 ,  C04B2235/786 ,  C04B2235/85 ,  Y10T29/49082 ,  Y10T29/49083

Abstract: The present invention relates to a method for manufacturing a SrTiO3 series varistor using grain boundary segregation, and more particularly, to a method for manufacturing a SrTiO3 series varistor by sintering a powdered composition in which acceptors such as Al and Fe are added in powdered form and then sintered under a reducing atmosphere and heat-treated them in the air to selectively form electrical conduction barriers at grain boundaries in a process for manufacturing SrTiO3 series varistor having an excellent non-linear coefficient and a breakdown voltage suitable for use.

Abstract translation: 本发明涉及一种使用晶界偏析制造SrTiO 3系列变阻器的方法，更具体地说，涉及通过烧结制备SrTiO 3系列变阻器的方法 其中以粉末形式加入受体如Al和Fe，然后在还原气氛下烧结并在空气中热处理以在晶界制造SrTiO 3的过程中选择性地形成导电屏障的粉末组合物， / SUB系列压敏电阻具有优异的非线性系数和适合使用的击穿电压。

公开(公告)号：US6160472A

公开(公告)日：2000-12-12

申请号：US621066

申请日：1996-03-22

Applicant: Tomohiro Arashi ,  Yukie Nakano ,  Atsushi Hitomi ,  Akira Sato ,  Takeshi Nomura

Inventor： Tomohiro Arashi ,  Yukie Nakano ,  Atsushi Hitomi ,  Akira Sato ,  Takeshi Nomura

IPC: H01C7/115 ,  H01C7/10

CPC classification number: C04B35/49 ,  C04B35/4682 ,  C04B35/638 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3241 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6582 ,  C04B2235/6584 ,  C04B2235/6588 ,  C04B2235/663 ,  C04B2235/72 ,  C04B2235/768 ,  H01C7/115

Abstract: A multilayer varistor comprising a varistor chip body having alternately stacked ceramic layers and internal electrode layers is provided. The ceramic layer is composed of a composite oxide containing Ti and/or Zr and Ba as a main component and Si and/or Al as a subordinate component, substantially free of Cr, and has a perovskite phase. The internal electrode layer is composed of a conductor containing a base metal such as Ni or Ni alloy as a main component. The varistor is used in an electric circuit for suppressing noise.

Abstract translation: 提供了一种包括具有交替堆叠的陶瓷层和内部电极层的变阻器芯片体的多层变阻器。 陶瓷层由含有Ti和/或Zr和Ba作为主要成分的复合氧化物组成，Si和/或Al作为次要成分，基本上不含Cr，并具有钙钛矿相。 内部电极层由以Ni或Ni合金为主要成分的贱金属的导体构成。 压敏电阻用于抑制噪声的电路中。