公开(公告)号：US07978047B2

公开(公告)日：2011-07-12

申请号：US11990774

申请日：2006-08-08

申请人： Yasunari Hosoi ,  Shigeo Ohnishi ,  Yasushi Ogimoto ,  Takashi Oka ,  Naoto Nagaosa ,  Yoshinori Tokura

发明人： Yasunari Hosoi ,  Shigeo Ohnishi ,  Yasushi Ogimoto ,  Takashi Oka ,  Naoto Nagaosa ,  Yoshinori Tokura

IPC分类号： H01C7/10

CPC分类号： H01C7/1013 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/31 ,  H01C7/115 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

摘要： A variable resistance element comprises a variable resistor of strongly-correlated material sandwiched between two metal electrodes, and the electric resistance between the metal electrodes varies when a voltage pulse is applied between the metal electrodes. Such a switching operation as the ratio of electric resistance between low and high resistance states is high can be attained by designing the metal electrodes and variable resistor appropriately based on a definite switching operation principle. Material and composition of the first electrode and variable resistor are set such that metal insulator transition takes place on the interface of the first electrode in any one of two metal electrodes and the variable resistor by applying a voltage pulse. Two-phase coexisting phase of metal and insulator phases can be formed in the vicinity of the interface between the variable resistor and first electrode by the work function difference between the first electrode and variable resistor.

摘要翻译： 可变电阻元件包括夹在两个金属电极之间的强相关材料的可变电阻器，并且当在金属电极之间施加电压脉冲时，金属电极之间的电阻变化。 通过根据确定的开关动作原理适当设计金属电极和可变电阻器，能够实现低电阻状态和高电阻状态之间的电阻比的切换操作。 第一电极和可变电阻器的材料和组成被设置为使得通过施加电压脉冲在两个金属电极中的任一个中的第一电极的接口和可变电阻器上发生金属绝缘体转变。 可以通过第一电极和可变电阻器之间的功函数差，在可变电阻器和第一电极之间的界面附近形成金属和绝缘体相的两相共存相。

公开(公告)号：US20090231083A1

公开(公告)日：2009-09-17

申请号：US11990774

申请日：2006-08-08

申请人： Yasunari Hosoi ,  Shigeo Ohnishi ,  Yasushi Ogimoto ,  Takashi Oka ,  Naoto Nagaosa ,  Yoshinori Tokura

发明人： Yasunari Hosoi ,  Shigeo Ohnishi ,  Yasushi Ogimoto ,  Takashi Oka ,  Naoto Nagaosa ,  Yoshinori Tokura

IPC分类号： H01C7/10

CPC分类号： H01C7/1013 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/31 ,  H01C7/115 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

摘要： A variable resistance element comprises a variable resistor of strongly-correlated material sandwiched between two metal electrodes, and the electric resistance between the metal electrodes varies when a voltage pulse is applied between the metal electrodes. Such a switching operation as the ratio of electric resistance between low and high resistance states is high can be attained by designing the metal electrodes and variable resistor appropriately based on a definite switching operation principle. Material and composition of the first electrode and variable resistor are set such that metal insulator transition takes place on the interface of the first electrode in any one of two metal electrodes and the variable resistor by applying a voltage pulse. Two-phase coexisting phase of metal and insulator phases can be formed in the vicinity of the interface between the variable resistor and first electrode by the work function difference between the first electrode and variable resistor.

摘要翻译： 可变电阻元件包括夹在两个金属电极之间的强相关材料的可变电阻器，并且当在金属电极之间施加电压脉冲时，金属电极之间的电阻变化。 通过根据确定的开关动作原理适当设计金属电极和可变电阻器，能够实现低电阻状态和高电阻状态之间的电阻比的切换操作。 第一电极和可变电阻器的材料和组成被设置为使得通过施加电压脉冲在两个金属电极中的任一个中的第一电极的接口和可变电阻器上发生金属绝缘体转变。 可以通过第一电极和可变电阻器之间的功函数差，在可变电阻器和第一电极之间的界面附近形成金属和绝缘体相的两相共存相。

公开(公告)号：US20100172170A1

公开(公告)日：2010-07-08

申请号：US12598642

申请日：2008-04-07

申请人： Yukio Tamai ,  Yasunari Hosoi ,  Nobuyoshi Awaya ,  Shigeo Ohnishi ,  Kazuya Ishihara ,  Hisashi Shima ,  Hiroyuki Akinaga ,  Fumiyoshi Takano

发明人： Yukio Tamai ,  Yasunari Hosoi ,  Nobuyoshi Awaya ,  Shigeo Ohnishi ,  Kazuya Ishihara ,  Hisashi Shima ,  Hiroyuki Akinaga ,  Fumiyoshi Takano

IPC分类号： G11C11/56 ,  H01L29/22 ,  H01L21/44

CPC分类号： G11C13/0011 ,  G11C11/5614 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2013/009 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/51 ,  G11C2213/56 ,  G11C2213/77 ,  H01L27/101 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

摘要： Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.

摘要翻译： 提供一种执行高速和低功耗操作的可变电阻元件。 可变电阻元件包括在第一和第二电极之间的金属氧化物层，其中第一和第二电极之间的电阻根据跨越第一和第二电极的电应力的应用而可逆地改变。 金属氧化物层具有灯丝，其是在第一和第二电极之间流动的电流的密度局部增加的电流路径。 在特定电极和金属氧化物层之间的界面上至少包括作为第一和第二电极中的一个或两个的特定电极和灯丝之间的界面附近的部分设置有界面氧化物，其界面氧化物 是包含在该特定电极中并且与金属氧化物层的氧化物不同的至少一种元素的氧化物。

公开(公告)号：US07952909B2

公开(公告)日：2011-05-31

申请号：US12517025

申请日：2007-11-05

申请人： Kohji Inoue ,  Yasunari Hosoi ,  Shigeo Ohnishi ,  Nobuyoshi Awaya

发明人： Kohji Inoue ,  Yasunari Hosoi ,  Shigeo Ohnishi ,  Nobuyoshi Awaya

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C13/0026 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/72 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1633

摘要： Provided is a nonvolatile semiconductor device capable of performing writing operations of different resistance changes for memory cells having variable resistive elements whose resistive characteristics are changed by voltage applications, individually and simultaneously. The device includes: a load resistive characteristic variable circuit for each bit line connected commonly with the memory cells on the same column for selecting one of two load resistive characteristics according to a first writing operation where the resistive characteristics of the variable resistive element to be written transit from a low resistance state to a high resistance state or a second writing operation where they transit reversely; and a writing voltage pulse application circuit for applying a first voltage pulse in a first writing operation and a second voltage pulse in a second writing operation to the memory cells to be written through the load resistive characteristic variable circuits and the bit limes.

摘要翻译： 提供了一种非易失性半导体器件，其能够对具有可变电阻元件的存储单元进行不同的电阻变化的写入操作，该电阻元件的电阻特性单独并同时由电压应用而改变。 该装置包括：用于与同一列上的存储器单元共同连接的每个位线的负载电阻特性可变电路，用于根据要写入的可变电阻元件的电阻特性的第一写入操作来选择两个负载电阻特性中的一个 从低电阻状态转移到高电阻状态或其反向转发的第二写入操作; 以及写入电压脉冲施加电路，用于将第一写入操作中的第一电压脉冲和第二写入操作中的第二电压脉冲施加到要通过负载电阻特性可变电路和位灰分写入的存储单元。

公开(公告)号：US07894239B2

公开(公告)日：2011-02-22

申请号：US12328648

申请日：2008-12-04

申请人： Yukio Tamai ,  Yasunari Hosoi ,  Nobuyoshi Awaya ,  Shigeo Ohnishi ,  Kazuya Ishihara ,  Hisashi Shima ,  Fumiyoshi Takano ,  Hiroyuki Akinaga

发明人： Yukio Tamai ,  Yasunari Hosoi ,  Nobuyoshi Awaya ,  Shigeo Ohnishi ,  Kazuya Ishihara ,  Hisashi Shima ,  Fumiyoshi Takano ,  Hiroyuki Akinaga

IPC分类号： G11C7/00

CPC分类号： G11C8/08 ,  G11C13/0007 ,  G11C13/0028 ,  G11C2013/0083 ,  G11C2213/32 ,  G11C2213/56 ,  G11C2213/77 ,  H01C7/108 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/1658 ,  Y10T29/49082

摘要： The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.

摘要翻译： 本发明的可变电阻元件是具有电极，另一个电极和夹在电极之间并具有电阻的金属氧化物材料的可变电阻元件，在电极之间，响应于施加在电极之间的电压而可逆地改变 电极。 可变电阻元件还包括在金属氧化物材料内部的具有比金属氧化物材料低的电阻并且与至少任一个电极不接触的低电阻材料。 这使得可以降低用于在金属氧化物材料内部提供导电部分的形成电压，而不会导致泄漏电流增加。

公开(公告)号：US20090147558A1

公开(公告)日：2009-06-11

申请号：US12328648

申请日：2008-12-04

申请人： Yukio Tamai ,  Yasunari Hosoi ,  Nobuyoshi Awaya ,  Shigeo Ohnishi ,  Kazuya Ishihara ,  Hisashi Shima ,  Fumiyoshi Takano ,  Hiroyuki Akinaga

发明人： Yukio Tamai ,  Yasunari Hosoi ,  Nobuyoshi Awaya ,  Shigeo Ohnishi ,  Kazuya Ishihara ,  Hisashi Shima ,  Fumiyoshi Takano ,  Hiroyuki Akinaga

IPC分类号： G11C11/21 ,  H01C7/10 ,  H01C17/00

CPC分类号： G11C8/08 ,  G11C13/0007 ,  G11C13/0028 ,  G11C2013/0083 ,  G11C2213/32 ,  G11C2213/56 ,  G11C2213/77 ,  H01C7/108 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/1658 ,  Y10T29/49082

摘要： The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.

摘要翻译： 本发明的可变电阻元件是具有电极，另一个电极和夹在电极之间并具有电阻的金属氧化物材料的可变电阻元件，在电极之间，响应于施加在电极之间的电压而可逆地改变 电极。 可变电阻元件还包括在金属氧化物材料内部的具有比金属氧化物材料低的电阻并且与至少任一个电极不接触的低电阻材料。 这使得可以降低用于在金属氧化物材料内部提供导电部分的形成电压，而不会导致泄漏电流增加。

公开(公告)号：US08054674B2

公开(公告)日：2011-11-08

申请号：US12598642

申请日：2008-04-07

申请人： Yukio Tamai ,  Yasunari Hosoi ,  Nobuyoshi Awaya ,  Shigeo Ohnishi ,  Kazuya Ishihara ,  Hisashi Shima ,  Hiroyuki Akinaga ,  Fumiyoshi Takano

发明人： Yukio Tamai ,  Yasunari Hosoi ,  Nobuyoshi Awaya ,  Shigeo Ohnishi ,  Kazuya Ishihara ,  Hisashi Shima ,  Hiroyuki Akinaga ,  Fumiyoshi Takano

IPC分类号： G11C11/00

CPC分类号： G11C13/0011 ,  G11C11/5614 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2013/009 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/51 ,  G11C2213/56 ,  G11C2213/77 ,  H01L27/101 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

摘要： Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.

摘要翻译： 提供一种执行高速和低功耗操作的可变电阻元件。 可变电阻元件包括在第一和第二电极之间的金属氧化物层，其中第一和第二电极之间的电阻根据跨越第一和第二电极的电应力的应用而可逆地改变。 金属氧化物层具有灯丝，其是在第一和第二电极之间流动的电流的密度局部增加的电流路径。 在特定电极和金属氧化物层之间的界面上至少包括作为第一和第二电极中的一个或两个的特定电极和灯丝之间的界面附近的部分设置有界面氧化物，其界面氧化物 是包含在该特定电极中并且与金属氧化物层的氧化物不同的至少一种元素的氧化物。

公开(公告)号：US06769372B2

公开(公告)日：2004-08-03

申请号：US10232465

申请日：2002-08-30

申请人： Kazunori Sato ,  Katsuyoshi Takekuma ,  Takehito Tomoi ,  Kenichi Inoue ,  Shigeo Ohnishi

发明人： Kazunori Sato ,  Katsuyoshi Takekuma ,  Takehito Tomoi ,  Kenichi Inoue ,  Shigeo Ohnishi

IPC分类号： B63B300

CPC分类号： B63B11/04 ,  B63B1/04 ,  B63B43/10

摘要： The present invention provides a large transport ship in which the shape of a ship bottom 1a from a bow 1h to a stern 1t, when viewed on a cross-section perpendicular to the longitudinal direction of the ship bottom 1a, is tapered towards the center CL of the ship bottom in the widthwise direction. Consequently, it is possible to resolve problems associated with changes in the draft corresponding to the state of the load, without using ballast water.

摘要翻译： 本发明提供一种大型运输船，其中当从与船底1a的纵向方向垂直的横截面观察时，从船首1h至船尾1t的船底1a的形状朝向中心CL逐渐变细 的船底沿宽度方向。 因此，可以在不使用压载水的情况下解决与负载状态对应的草图的变化相关联的问题。

公开(公告)号：US20110089395A1

公开(公告)日：2011-04-21

申请号：US12976113

申请日：2010-12-22

申请人： Tetsuya OHNISHI ,  Naoyuki Shinmura ,  Shinobu Yamazaki ,  Takahiro Shibuya ,  Takashi Nakano ,  Masayuki Tajiri ,  Shigeo Ohnishi

发明人： Tetsuya OHNISHI ,  Naoyuki Shinmura ,  Shinobu Yamazaki ,  Takahiro Shibuya ,  Takashi Nakano ,  Masayuki Tajiri ,  Shigeo Ohnishi

IPC分类号： H01L45/00

CPC分类号： G11C13/0007 ,  G11C2213/31 ,  G11C2213/77 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/1625

摘要： A semiconductor memory device having a cross point structure includes a plurality of upper electrodes arranged to extend in one direction, and a plurality of lower electrodes arranged to extend in another direction at a right angle to the one direction of the upper electrodes. Memory materials are provided between the upper electrodes and the lower electrodes for storage of data. The memory materials are made of a perovskite material and arranged at the lower electrodes side of the corresponding upper electrode extending along the corresponding upper electrode.

摘要翻译： 具有交叉点结构的半导体存储器件包括沿一个方向延伸的多个上电极和布置成沿与上电极的一个方向成直角的另一方向延伸的多个下电极。 记录材料设置在上电极和下电极之间用于存储数据。 记忆材料由钙钛矿材料制成，并且布置在沿着相应的上电极延伸的相应上电极的下电极侧。

公开(公告)号：US20060102943A1

公开(公告)日：2006-05-18

申请号：US11274258

申请日：2005-11-16

申请人： Tetsuya Ohnishi ,  Naoyuki Shinmura ,  Shinobu Yamazaki ,  Takahiro Shibuya ,  Takashi Nakano ,  Masayuki Tajiri ,  Shigeo Ohnishi

发明人： Tetsuya Ohnishi ,  Naoyuki Shinmura ,  Shinobu Yamazaki ,  Takahiro Shibuya ,  Takashi Nakano ,  Masayuki Tajiri ,  Shigeo Ohnishi

IPC分类号： H01L29/94

CPC分类号： G11C13/0007 ,  G11C2213/31 ,  G11C2213/77 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/1625

摘要： A semiconductor memory device having a cross point structure includes a plurality of upper electrodes arranged to extend in one direction, and a plurality of lower electrodes arranged to extend in another direction at a right angle to the one direction of the upper electrodes. Memory materials are provided between the upper electrodes and the lower electrodes for storage of data. The memory materials are made of a perovskite material and arranged at the lower electrodes side of the corresponding upper electrode extending along the corresponding upper electrode.

摘要翻译： 具有交叉点结构的半导体存储器件包括沿一个方向延伸的多个上电极和布置成沿与上电极的一个方向成直角的另一方向延伸的多个下电极。 记录材料设置在上电极和下电极之间用于存储数据。 记忆材料由钙钛矿材料制成，并且布置在沿着相应的上电极延伸的相应上电极的下电极侧。