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    Semiconductor component and manufacturing method thereof
    5.
    发明授权
    Semiconductor component and manufacturing method thereof 有权
    半导体元件及其制造方法

    公开(公告)号：US08937349B2

    公开(公告)日：2015-01-20

    申请号：US12967857

    申请日：2010-12-14

    申请人： Koichi Amari

    发明人： Koichi Amari

    IPC分类号： H01L29/772 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78

    CPC分类号： H01L29/7834 ,  H01L29/1037 ,  H01L29/4236 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/66621 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/7843

    摘要： A semiconductor component includes: a semiconductor substrate; and a semiconductor device provided thereon, the device being a field-effect transistor that includes: a gate insulating film provided on the substrate; a gate electrode provided via the film; and a pair of source-drain regions provided to sandwich the electrode, the substrate including a patterned surface in a portion where the electrode is provided, the patterned surface of the substrate including a raised portion where the film is formed to cover a surface that lies on the same plane as a surface of the pair of source-drain regions, and the electrode is formed on a top surface of the film, and the patterned surface of the substrate including a recessed portion where the film is formed to cover surfaces of a groove formed toward the interior than the surface of the pair of source-drain regions, and the electrode is formed so as to fill the groove provided with the film.

    摘要翻译： 半导体部件包括：半导体基板; 以及设置在其上的半导体器件，所述器件是场效应晶体管，其包括：设置在所述衬底上的栅极绝缘膜; 经由膜提供的栅电极; 以及设置成夹着电极的一对源极 -​​ 漏极区域，所述基板在设置有所述电极的部分中包括图案化表面，所述基板的图案化表面包括凸起部分，所述凸起部分形成所述膜以覆盖位于所述电极 在与所述一对源极 -​​ 漏极区域的表面相同的平面上，并且所述电极形成在所述膜的顶表面上，并且所述基板的图案化表面包括形成所述膜的凹部以覆盖所述膜的表面 形成为比一对源极 -​​ 漏极区域的表面更靠内部的槽，并且形成电极以填充设置有膜的凹槽。

    SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF 有权
    半导体元器件及其制造方法

    公开(公告)号：US20110156136A1

    公开(公告)日：2011-06-30

    申请号：US12967857

    申请日：2010-12-14

    申请人： Koichi Amari

    发明人： Koichi Amari

    IPC分类号： H01L29/772 ,  H01L21/336

    CPC分类号： H01L29/7834 ,  H01L29/1037 ,  H01L29/4236 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/66621 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/7843

    摘要： A semiconductor component includes: a semiconductor substrate; and a semiconductor device provided thereon, the device being a field-effect transistor that includes: a gate insulating film provided on the substrate; a gate electrode provided via the film; and a pair of source-drain regions provided to sandwich the electrode, the substrate including a patterned surface in a portion where the electrode is provided, the patterned surface of the substrate including a raised portion where the film is formed to cover a surface that lies on the same plane as a surface of the pair of source-drain regions, and the electrode is formed on a top surface of the film, and the patterned surface of the substrate including a recessed portion where the film is formed to cover surfaces of a groove formed toward the interior than the surface of the pair of source-drain regions, and the electrode is formed so as to fill the groove provided with the film.

    摘要翻译： 半导体部件包括：半导体基板; 以及设置在其上的半导体器件，所述器件是场效应晶体管，其包括：设置在所述衬底上的栅极绝缘膜; 经由膜提供的栅电极; 以及设置成夹着电极的一对源极 -​​ 漏极区域，所述基板在设置有所述电极的部分中包括图案化表面，所述基板的图案化表面包括凸起部分，所述凸起部分形成所述膜以覆盖位于所述电极 在与所述一对源极 -​​ 漏极区域的表面相同的平面上，并且所述电极形成在所述膜的顶表面上，并且所述基板的图案化表面包括形成所述膜的凹部以覆盖所述膜的表面 形成为比一对源极 -​​ 漏极区域的表面更靠内部的凹槽，并且形成电极以填充设置有膜的凹槽。