公开(公告)号：US20060249073A1

公开(公告)日：2006-11-09

申请号：US10548825

申请日：2004-03-10

申请人： Yasushi Asaoka ,  Tadaaki Kaneko ,  Nakatsu Sano ,  Hiroshi Kawai ,  Tomohira Iwazaki ,  Seiji Yamaguchi ,  Hiroyuki Matsumoto ,  Toshiyuki Kouno

发明人： Yasushi Asaoka ,  Tadaaki Kaneko ,  Nakatsu Sano ,  Hiroshi Kawai ,  Tomohira Iwazaki ,  Seiji Yamaguchi ,  Hiroyuki Matsumoto ,  Toshiyuki Kouno

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B33/02 ,  C30B19/00 ,  C30B29/36

摘要： The present invention is a method suitable for heat treatment, or a heat treatment method for growing single crystal silicon carbide by a liquid phase epitaxial method, wherein a monocrystal silicon carbide substrate as a seed crystal and a polycrystal silicon carbide substrate are piled up, placed inside a closed container, and subjected to high-temperature heat treatment, by which very thin metallic silicon melt layer is interposed between the monocrystal silicon carbide substrate and the polycrystal silicon carbide substrate during heat treatment, and single crystal silicon carbide is liquid-phase epitaxially grown on the monocrystal silicon carbide substrate. The closed container is in advance heated to a temperature exceeding approximately 800° C. in an preheating chamber kept at a pressure of approximately 10−5 Pa or lower, the closed container is reduced in pressure to approximately 10−5 Pa or lower, and the container is transported and placed in the heat chamber, which is in advance heated to a prescribed temperature in a range from approximately 1400° C. to 2300° C., in a vacuum at a pressure of approximately 10−2 Pa or lower or in an inert gas atmosphere at a prescribed reduced pressure, by which the monocrystal silicon carbide substrate and the polycrystal silicon carbide substrate are heated in a short time to a prescribed temperature in a range from approximately 1400° C. to 2300° C. to produce single crystal silicon carbide which is free of fine grain boundaries and approximately 1/cm2 or lower in density of micropipe defects on the surface. Further, the present invention is heat treatment equipment used in carrying out the heat treatment method.

摘要翻译： 本发明是适用于热处理的方法，或通过液相外延法生长单晶碳化硅的热处理方法，其中堆积作为晶种的单晶碳化硅基板和多晶碳化硅基板，放置 在密闭容器内，进行高温热处理，在热处理过程中，在单晶碳化硅基板和多晶碳化硅基板之间插入非常薄的金属硅熔融层，单晶碳化硅是液相外延 生长在单晶碳化硅衬底上。 在保持在约10 -5 Pa或更低的压力的预热室中，将密封容器预先加热至超过约800℃的温度，将密封容器减压至约10℃ 低于-5℃，并且将容器输送并放置在预先加热到约1400℃至2300℃范围内的规定温度的加热室中，在 在大约10 -2 Pa或更低的压力下或在惰性气体气氛中以规定的减压下的真空，单晶碳化硅衬底和多晶碳化硅衬底在短时间内被加热 时间达到在约1400℃至2300℃的范围内的规定温度，以产生不含细晶粒边界和约1 / cm 2或更低密度的单晶碳化硅 表面上存在微管缺陷。 此外，本发明是用于实施热处理方法的热处理设备。