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    Method of heat treatment and heat treatment apparatus
    1.
    发明申请
    Method of heat treatment and heat treatment apparatus 审中-公开
    热处理和热处理装置的方法

    公开(公告)号：US20060249073A1

    公开(公告)日：2006-11-09

    申请号：US10548825

    申请日：2004-03-10

    申请人： Yasushi Asaoka ,  Tadaaki Kaneko ,  Nakatsu Sano ,  Hiroshi Kawai ,  Tomohira Iwazaki ,  Seiji Yamaguchi ,  Hiroyuki Matsumoto ,  Toshiyuki Kouno

    发明人： Yasushi Asaoka ,  Tadaaki Kaneko ,  Nakatsu Sano ,  Hiroshi Kawai ,  Tomohira Iwazaki ,  Seiji Yamaguchi ,  Hiroyuki Matsumoto ,  Toshiyuki Kouno

    IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

    CPC分类号： C30B33/02 ,  C30B19/00 ,  C30B29/36

    摘要： The present invention is a method suitable for heat treatment, or a heat treatment method for growing single crystal silicon carbide by a liquid phase epitaxial method, wherein a monocrystal silicon carbide substrate as a seed crystal and a polycrystal silicon carbide substrate are piled up, placed inside a closed container, and subjected to high-temperature heat treatment, by which very thin metallic silicon melt layer is interposed between the monocrystal silicon carbide substrate and the polycrystal silicon carbide substrate during heat treatment, and single crystal silicon carbide is liquid-phase epitaxially grown on the monocrystal silicon carbide substrate. The closed container is in advance heated to a temperature exceeding approximately 800° C. in an preheating chamber kept at a pressure of approximately 10−5 Pa or lower, the closed container is reduced in pressure to approximately 10−5 Pa or lower, and the container is transported and placed in the heat chamber, which is in advance heated to a prescribed temperature in a range from approximately 1400° C. to 2300° C., in a vacuum at a pressure of approximately 10−2 Pa or lower or in an inert gas atmosphere at a prescribed reduced pressure, by which the monocrystal silicon carbide substrate and the polycrystal silicon carbide substrate are heated in a short time to a prescribed temperature in a range from approximately 1400° C. to 2300° C. to produce single crystal silicon carbide which is free of fine grain boundaries and approximately 1/cm2 or lower in density of micropipe defects on the surface. Further, the present invention is heat treatment equipment used in carrying out the heat treatment method.

    摘要翻译： 本发明是适用于热处理的方法，或通过液相外延法生长单晶碳化硅的热处理方法，其中堆积作为晶种的单晶碳化硅基板和多晶碳化硅基板，放置 在密闭容器内，进行高温热处理，在热处理过程中，在单晶碳化硅基板和多晶碳化硅基板之间插入非常薄的金属硅熔融层，单晶碳化硅是液相外延 生长在单晶碳化硅衬底上。 在保持在约10 -5 Pa或更低的压力的预热室中，将密封容器预先加热至超过约800℃的温度，将密封容器减压至约10℃ 低于-5℃，并且将容器输送并放置在预先加热到约1400℃至2300℃范围内的规定温度的加热室中，在 在大约10 -2 Pa或更低的压力下或在惰性气体气氛中以规定的减压下的真空，单晶碳化硅衬底和多晶碳化硅衬底在短时间内被加热 时间达到在约1400℃至2300℃的范围内的规定温度，以产生不含细晶粒边界和约1 / cm 2或更低密度的单晶碳化硅 表面上存在微管缺陷。 此外，本发明是用于实施热处理方法的热处理设备。

    Radio communication terminal that selects among radio communication networks
    4.
    发明授权
    Radio communication terminal that selects among radio communication networks 有权
    无线电通信终端，在无线电通信网络中进行选择

    公开(公告)号：US09191885B2

    公开(公告)日：2015-11-17

    申请号：US13443734

    申请日：2012-04-10

    申请人： Hiroyuki Matsumoto

    发明人： Hiroyuki Matsumoto

    IPC分类号： H04M1/00 ,  H04W48/18 ,  H04W8/18

    CPC分类号： H04W48/18 ,  H04W8/18 ,  H04W48/20 ,  H04W76/11 ,  H04W84/12 ,  H04W88/06

    摘要： A radio communication terminal 100 includes: a first storage unit 1171 configured to store a PRL list L1 used for connection to a communication provider-provided WLAN provided by a communication provider, a content of the first storage unit 1171 being rewritable by the communication provider; and a second storage unit 1172 configured to store a user registration list L2 used for connection to a user-registered WLAN registered by a user of the radio communication terminal, the second storage unit 1172 being rewritable by the user. The radio communication terminal 100 selects any one of the communication provider-provided WLAN and the user-registered WLAN, based on the PRL list L1 and the user registration list L2.

    摘要翻译： 无线通信终端100包括：第一存储单元1171，其被配置为存储用于连接到由通信提供商提供的通信提供商提供的WLAN的PRL列表L1，第一存储单元1171的内容可由通信提供商重写; 以及第二存储单元1172，其被配置为存储用于连接到由无线电通信终端的用户注册的用户注册的WLAN的用户注册列表L2，第二存储单元1172可由用户重写。 无线电通信终端100基于PRL列表L1和用户注册列表L2选择通信提供商提供的WLAN和用户注册的WLAN中的任一个。

    Illumination apparatus
    6.
    发明授权
    Illumination apparatus 有权
    照明装置

    公开(公告)号：US08754588B2

    公开(公告)日：2014-06-17

    申请号：US13563173

    申请日：2012-07-31

    申请人： Sinsuke Minaki ,  Jun Matsuzaki ,  Tadahiro Kono ,  Koji Yamashita ,  Hiroyuki Matsumoto ,  Atusi Ootubo

    发明人： Sinsuke Minaki ,  Jun Matsuzaki ,  Tadahiro Kono ,  Koji Yamashita ,  Hiroyuki Matsumoto ,  Atusi Ootubo

    IPC分类号： H05B37/02

    CPC分类号： H05B33/0884 ,  H05B33/0821

    摘要： An illumination apparatus including: a power supply circuit which outputs a DC power obtained by rectifying an AC voltage and stepping up the rectified voltage; a light source unit having semiconductor light emitting elements turned on by the DC power; and a housing formed of a conductive material that is grounded through a ground path and on which the power supply circuit and the light source unit are mounted. When one of power feed lines is cut off, the light emitting elements are supplied with an AC power from an AC power source through the ground path and a stray capacitance formed between the light source unit and the housing, and a forward voltage of the light emitting elements has a light emission level hardly recognizable.

    摘要翻译： 一种照明装置，包括：电源电路，其输出通过对AC电压进行整流而得到的直流电力，并提高整流电压; 具有通过所述直流电源接通的半导体发光元件的光源单元; 以及由导电材料形成的壳体，其通过接地路径接地，并且电源电路和光源单元安装在该壳体上。 当切断供电线之一时，发光元件从交流电源通过接地路径提供AC电力，并在光源单元和壳体之间形成杂散电容，并且将光的正向电压 发光元件的发光水平难以识别。

    Zoom lens and imaging apparatus
    7.
    发明授权
    Zoom lens and imaging apparatus 有权
    变焦镜头和成像设备

    公开(公告)号：US08520318B2

    公开(公告)日：2013-08-27

    申请号：US13064701

    申请日：2011-04-11

    申请人： Masaharu Hosoi ,  Hiroyuki Matsumoto ,  Masafumi Sueyoshi

    发明人： Masaharu Hosoi ,  Hiroyuki Matsumoto ,  Masafumi Sueyoshi

    IPC分类号： G02B15/14

    CPC分类号： G02B15/173 ,  G02B13/06

    摘要： A zoom lens including first, second, and third lens groups having positive, negative, and positive refractive powers, respectively, which are arranged in that order from the object side to the image side such that, when zooming from wide-angle to telephoto, the first lens group moves to the object side, and spacings between the lens groups change. The third lens group has at least two lenses including a first lens, which is a positive lens arranged closer to the object side than the other lenses of the third lens group. Blur correction is performed by moving the first lens perpendicularly to the optical axis. The third lens group is configured such that the following conditional expression is satisfied: 0.3

    摘要翻译： 一种变焦透镜，包括分别具有正，负和正折射光焦度的第一透镜组，第二透镜组和第三透镜组，其以从物体侧到像侧的顺序排列，使得当从广角变焦到长焦时， 第一透镜组移动到物体侧，并且透镜组之间的间距变化。 第三透镜组具有包括第一透镜的至少两个透镜，第一透镜是比第三透镜组的其它透镜更靠近物体侧布置的正透镜。 通过使第一透镜垂直于光轴移动来进行模糊校正。 第三透镜组被配置为使得满足以下条件表达式：0.3 <（1-betakFW）·betakRW <1.9，其中betakFW和betakRW分别是第一透镜和其余透镜的广角处的横向倍率 的第三个镜头组。

    Pneumatic tire with tread having main grooves and sipes
    8.
    发明授权
    Pneumatic tire with tread having main grooves and sipes 有权
    具有胎面的气动轮胎具有主槽和刀槽花纹

    公开(公告)号：US08511357B2

    公开(公告)日：2013-08-20

    申请号：US12521008

    申请日：2008-01-28

    申请人： Hiroyuki Matsumoto

    发明人： Hiroyuki Matsumoto

    IPC分类号： B60C11/03 ,  B60C11/12 ,  B60C11/13

    CPC分类号： B60C11/13 ,  B60C11/0309 ,  B60C11/1323 ,  B60C2011/1213

    摘要： A pneumatic tire has a tread surface is provided with a groove portion, and a land portion sectioned by the groove portion. In wall surfaces facing the groove portion in the land portion, an inside wall surface facing an inner side at a time of being installed to a vehicle is formed by a zigzag surface, and an outside wall surface facing an outer side at a time of being installed to the vehicle is formed by a flat surface.

    摘要翻译： 充气轮胎具有胎面表面，该胎面表面设有槽部分，以及由槽部分分割的胎面部分。 在与陆部的槽部相对的壁面上，在车辆安装时面向内侧的内壁面形成为Z字形表面，并且在形成时成为与外侧相对的外侧壁面 安装在车辆上的是平坦的表面。