公开(公告)号：US07611976B2

公开(公告)日：2009-11-03

申请号：US11428758

申请日：2006-07-05

申请人： Yi Ma ,  Khaled Z. Ahmed ,  Kevin L. Cunningham ,  Robert C. McIntosh ,  Abhilash J. Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Yue Becky Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Eugene Miner

发明人： Yi Ma ,  Khaled Z. Ahmed ,  Kevin L. Cunningham ,  Robert C. McIntosh ,  Abhilash J. Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Yue Becky Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Eugene Miner

IPC分类号： H01L21/425

CPC分类号： H01L21/268 ,  H01L21/28035 ,  H01L21/324

摘要： Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800° C. or higher, such as about 1,000° C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000° C. or greater, such within a range from about 1,050° C. to about 1,400° C., for about 500 milliseconds or less, such as about 100 milliseconds or less.

摘要翻译： 本发明的实施方案通常提供了在衬底上形成掺杂的含硅材料的方法。 在一个实施例中，该方法提供在电介质层上沉积多晶层并且用掺杂剂注入多晶层以形成掺杂浓度在约1×10 19原子/ cm 3至约1×10 21原子/ cm 3范围内的掺杂多晶层，其中 掺杂多晶层含有硅或可含有锗，碳或硼。 在快速热退火期间，衬底可以被加热到约800℃或更高，例如约1000℃的温度。 随后，掺杂多晶层可以暴露于激光退火并加热至约1000℃或更高的温度，例如在约1050℃至约1400℃的温度下，持续约500毫秒或更短 ，例如约100毫秒或更少。

公开(公告)号：US07078302B2

公开(公告)日：2006-07-18

申请号：US10784904

申请日：2004-02-23

申请人： Yi Ma ,  Khaled Z. Ahmed ,  Kevin L. Cunningham ,  Robert C. McIntosh ,  Abhilash J. Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Yue Becky Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Eugene Miner

发明人： Yi Ma ,  Khaled Z. Ahmed ,  Kevin L. Cunningham ,  Robert C. McIntosh ,  Abhilash J. Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Yue Becky Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Eugene Miner

IPC分类号： H01L21/336 ,  H01L21/22 ,  H01L21/38 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/268 ,  H01L21/28035 ,  H01L21/324

摘要： In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.

摘要翻译： 在一个实施例中，本发明通常提供了一种用于退火衬底上的掺杂层的方法，包括将多晶层沉积到栅极氧化物层并用掺杂剂注入多晶层以形成掺杂的多晶层。 该方法还包括将掺杂多晶层暴露于快速热退火以便容易地将掺杂剂分布在整个多晶层中。 随后，该方法包括将掺杂多晶层暴露于激光退火以激活多晶层上部的掺杂剂。