公开(公告)号：US5190792A

公开(公告)日：1993-03-02

申请号：US413357

申请日：1989-09-27

申请人： Joseph M. Blum ,  Kevin K. Chan ,  Robert C. McIntosh ,  Zeev A. Weinberg

发明人： Joseph M. Blum ,  Kevin K. Chan ,  Robert C. McIntosh ,  Zeev A. Weinberg

IPC分类号： C23C16/02 ,  C23C16/40 ,  H01L21/316

CPC分类号： C23C16/402 ,  C23C16/0227

摘要： The present invention relates to a low-pressure chemical vapor deposition (LPCVD) process for depositing silicon dioxide. In particular, the present invention describes a process involving a pre-cleaning step in which all impurities are removed from the substrate followed by a LPCVD step performed at temperatures of between 200.degree. C. and 300.degree. C. The process of the present invention is intended to replace higher temperature LPCVD and thermal processes for depositing silicon dioxide.More particularly, the present invention involves a process in which a substrate is washed using a predetermined cleaning process. The substrate is then exposed to a dilute hydrofluoric acid solution which removes native oxide and contaminants from the surface. Next, the substrate is rinsed with, for example, de-ionized water or ultra-clean water to remove any hydrofluoric acid or other residue from the previous process steps. A layer of material, for example, silicon dioxide, is then deposited using a low-pressure chemical vapor deposition process in which the gas flow comprises silane, oxygen and nitrogen at temperatures below 300.degree. C. Oxide qualities approaching those of thermally grown oxides having been achieved.

公开(公告)号：US07754518B2

公开(公告)日：2010-07-13

申请号：US12032475

申请日：2008-02-15

申请人： Blake Koelmel ,  Robert C. McIntosh ,  David D L Larmagnac ,  Alexander N. Lerner ,  Abhilash J. Mayur ,  Joseph Yudovsky

发明人： Blake Koelmel ,  Robert C. McIntosh ,  David D L Larmagnac ,  Alexander N. Lerner ,  Abhilash J. Mayur ,  Joseph Yudovsky

IPC分类号： H01L21/00

CPC分类号： H01L21/67115 ,  H01L21/268 ,  H01L21/68735 ,  H01L21/68742

摘要： A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy toward a surface of the substrate. An energy blocker is provided to block at least a portion of the energy directed toward the substrate. The blocker prevents damage to the substrate from thermal stresses as the incident energy approaches an edge of the substrate.

摘要翻译： 提供了一种用于热处理衬底的方法和装置。 衬底被布置在处理室内，其被配置用于通过将电磁能量引导到衬底的表面进行热处理。 提供能量阻挡器以阻挡朝向衬底的能量的至少一部分。 当入射能量接近衬底的边缘时，阻挡剂防止由于热应力而损坏衬底。

公开(公告)号：US20100273334A1

公开(公告)日：2010-10-28

申请号：US12834620

申请日：2010-07-12

申请人： Blake Koelmel ,  Robert C. McIntosh ,  David DL Larmagnac ,  Alexander N. Lerner ,  Abhilash J. Mayur ,  Joseph Yudovsky

发明人： Blake Koelmel ,  Robert C. McIntosh ,  David DL Larmagnac ,  Alexander N. Lerner ,  Abhilash J. Mayur ,  Joseph Yudovsky

IPC分类号： H01L21/26

CPC分类号： H01L21/67115 ,  H01L21/268 ,  H01L21/68735 ,  H01L21/68742

摘要： A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy toward a surface of the substrate. An energy blocker is provided to block at least a portion of the energy directed toward the substrate. The blocker prevents damage to the substrate from thermal stresses as the incident energy approaches an edge of the substrate.

摘要翻译： 提供了一种用于热处理衬底的方法和装置。 衬底被布置在处理室内，其被配置用于通过将电磁能量引导到衬底的表面进行热处理。 提供能量阻挡器以阻挡朝向衬底的能量的至少一部分。 当入射能量接近衬底的边缘时，阻挡剂防止由于热应力而损坏衬底。

公开(公告)号：US07611976B2

公开(公告)日：2009-11-03

申请号：US11428758

申请日：2006-07-05

申请人： Yi Ma ,  Khaled Z. Ahmed ,  Kevin L. Cunningham ,  Robert C. McIntosh ,  Abhilash J. Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Yue Becky Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Eugene Miner

发明人： Yi Ma ,  Khaled Z. Ahmed ,  Kevin L. Cunningham ,  Robert C. McIntosh ,  Abhilash J. Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Yue Becky Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Eugene Miner

IPC分类号： H01L21/425

CPC分类号： H01L21/268 ,  H01L21/28035 ,  H01L21/324

摘要： Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800° C. or higher, such as about 1,000° C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000° C. or greater, such within a range from about 1,050° C. to about 1,400° C., for about 500 milliseconds or less, such as about 100 milliseconds or less.

摘要翻译： 本发明的实施方案通常提供了在衬底上形成掺杂的含硅材料的方法。 在一个实施例中，该方法提供在电介质层上沉积多晶层并且用掺杂剂注入多晶层以形成掺杂浓度在约1×10 19原子/ cm 3至约1×10 21原子/ cm 3范围内的掺杂多晶层，其中 掺杂多晶层含有硅或可含有锗，碳或硼。 在快速热退火期间，衬底可以被加热到约800℃或更高，例如约1000℃的温度。 随后，掺杂多晶层可以暴露于激光退火并加热至约1000℃或更高的温度，例如在约1050℃至约1400℃的温度下，持续约500毫秒或更短 ，例如约100毫秒或更少。

公开(公告)号：US07078302B2

公开(公告)日：2006-07-18

申请号：US10784904

申请日：2004-02-23

申请人： Yi Ma ,  Khaled Z. Ahmed ,  Kevin L. Cunningham ,  Robert C. McIntosh ,  Abhilash J. Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Yue Becky Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Eugene Miner

发明人： Yi Ma ,  Khaled Z. Ahmed ,  Kevin L. Cunningham ,  Robert C. McIntosh ,  Abhilash J. Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Yue Becky Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Eugene Miner

IPC分类号： H01L21/336 ,  H01L21/22 ,  H01L21/38 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/268 ,  H01L21/28035 ,  H01L21/324

摘要： In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.

摘要翻译： 在一个实施例中，本发明通常提供了一种用于退火衬底上的掺杂层的方法，包括将多晶层沉积到栅极氧化物层并用掺杂剂注入多晶层以形成掺杂的多晶层。 该方法还包括将掺杂多晶层暴露于快速热退火以便容易地将掺杂剂分布在整个多晶层中。 随后，该方法包括将掺杂多晶层暴露于激光退火以激活多晶层上部的掺杂剂。

公开(公告)号：US07923280B2

公开(公告)日：2011-04-12

申请号：US12834620

申请日：2010-07-12

申请人： Blake Koelmel ,  Robert C. McIntosh ,  David D L Larmagnac ,  Alexander N. Lerner ,  Abhilash J. Mayur ,  Joseph Yudovsky

发明人： Blake Koelmel ,  Robert C. McIntosh ,  David D L Larmagnac ,  Alexander N. Lerner ,  Abhilash J. Mayur ,  Joseph Yudovsky

IPC分类号： H01L21/00

CPC分类号： H01L21/67115 ,  H01L21/268 ,  H01L21/68735 ,  H01L21/68742

摘要： A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy toward a surface of the substrate. An energy blocker is provided to block at least a portion of the energy directed toward the substrate. The blocker prevents damage to the substrate from thermal stresses as the incident energy approaches an edge of the substrate.

摘要翻译： 提供了一种用于热处理衬底的方法和装置。 衬底被布置在处理室内，其被配置用于通过将电磁能量引导到衬底的表面进行热处理。 提供能量阻挡器以阻挡朝向衬底的能量的至少一部分。 当入射能量接近衬底的边缘时，阻挡剂防止由于热应力而损坏衬底。

公开(公告)号：US20090209112A1

公开(公告)日：2009-08-20

申请号：US12032475

申请日：2008-02-15

申请人： Blake Koelmel ,  Robert C. McIntosh ,  David DL Larmagnac ,  Alexander N. Lerner ,  Abhilash J. Mayur ,  Joseph Yudovsky

发明人： Blake Koelmel ,  Robert C. McIntosh ,  David DL Larmagnac ,  Alexander N. Lerner ,  Abhilash J. Mayur ,  Joseph Yudovsky

IPC分类号： H01L21/268 ,  B23Q3/00

CPC分类号： H01L21/67115 ,  H01L21/268 ,  H01L21/68735 ,  H01L21/68742

摘要： A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy toward a surface of the substrate. An energy blocker is provided to block at least a portion of the energy directed toward the substrate. The blocker prevents damage to the substrate from thermal stresses as the incident energy approaches an edge of the substrate.

摘要翻译： 提供了一种用于热处理衬底的方法和装置。 衬底被布置在处理室内，其被配置用于通过将电磁能量引导到衬底的表面进行热处理。 提供能量阻挡器以阻挡朝向衬底的能量的至少一部分。 当入射能量接近衬底的边缘时，阻挡剂防止由于热应力而损坏衬底。

公开(公告)号：US4474864A

公开(公告)日：1984-10-02

申请号：US512281

申请日：1983-07-08

申请人： Ming-Fea Chow ,  Alexander D. Lopata ,  Christopher F. Lyons ,  Robert C. McIntosh ,  Anthony F. Scaduto

发明人： Ming-Fea Chow ,  Alexander D. Lopata ,  Christopher F. Lyons ,  Robert C. McIntosh ,  Anthony F. Scaduto

IPC分类号： H01L21/30 ,  G03C5/08 ,  G03F7/105 ,  G03F7/20 ,  G03C5/18 ,  G03C5/16

CPC分类号： G03F7/70558 ,  G03F7/105 ,  G03F7/20

摘要： A process for setting the exposure speed of photolithography instruments is described, using a method of dosimetry based on photoactive compound bleaching of photoresist. A curve of light absorbance to exposure speed and a calibration curve of light absorbance to dose are determined for a photoresist. The exposure speed for any desired degree of resist bleaching can be set using the first curve, and the exposure speed for a predetermined dosage can be set by determining the common light absorbance value on the exposure speed and dosage curves.

摘要翻译： 使用基于光致抗蚀剂的光活性化合物漂白的剂量测定方法来描述用于设定光刻仪的曝光速度的方法。 对于光致抗蚀剂，测定吸光度对曝光速度的曲线以及光吸收率与剂量的校准曲线。 可以使用第一曲线设定任何所需程度的抗蚀剂漂白的曝光速度，并且可以通过确定曝光速度和剂量曲线上的常见光吸收值来设定预定剂量的曝光速度。