公开(公告)号：US20120300553A1

公开(公告)日：2012-11-29

申请号：US13567817

申请日：2012-08-06

申请人： Yi-Fan Chang ,  Su-chueh Lo ,  Cheng Ming Yih ,  Ta Kang Chu ,  Chu Ching Wu ,  Kuo Yu Liao ,  Ken Hui Chen ,  Kuen-Long Chang ,  Chun-Hsiung Hung

发明人： Yi-Fan Chang ,  Su-chueh Lo ,  Cheng Ming Yih ,  Ta Kang Chu ,  Chu Ching Wu ,  Kuo Yu Liao ,  Ken Hui Chen ,  Kuen-Long Chang ,  Chun-Hsiung Hung

IPC分类号： G11C16/04

CPC分类号： G11C11/5635 ,  G11C16/0483 ,  G11C16/3418

摘要： Various discussed approaches improve the over erase issue and the coupling effect, and include (A) multilevel contacts between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line; (B) a sufficient separation distance between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line. These are examples of electrically isolating (i) the first outer selected word line of an erase group, from (ii) the first unselected word line outside the ease group neighboring the first outer selected word line.

摘要翻译： 各种讨论的方法改进了过度擦除问题和耦合效应，并且包括（A）（i）擦除组的第一外部选定字线之间的多电平接触，以及（ii）与易失性组相邻的第一未选择字线 第一外选字线; （B）在（i）擦除组的第一外部选择字线之间的足够的间隔距离，和（ii）与第一外部选择字线相邻的容易组之外的第一未选择字线。 这些是将（i）擦除组的第一外部选择的字线从（ii）与第一外部选择字线相邻的易用组之外的第一未选择字线电隔离的示例。

公开(公告)号：US08259499B2

公开(公告)日：2012-09-04

申请号：US12826280

申请日：2010-06-29

申请人： Yi-Fan Chang ,  Su-chueh Lo ,  Cheng Ming Yih ,  Ta Kang Chu ,  Chu Ching Wu ,  Kuo Yu Liao ,  Ken Hui Chen ,  Kuen-Long Chang ,  Chun-Hsiung Hung

发明人： Yi-Fan Chang ,  Su-chueh Lo ,  Cheng Ming Yih ,  Ta Kang Chu ,  Chu Ching Wu ,  Kuo Yu Liao ,  Ken Hui Chen ,  Kuen-Long Chang ,  Chun-Hsiung Hung

IPC分类号： G11C11/34

CPC分类号： G11C11/5635 ,  G11C16/0483 ,  G11C16/3418

摘要： Various discussed approaches improve the over erase issue and the coupling effect, and include (A) multilevel contacts between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line; (B) a sufficient separation distance between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line. These are examples of electrically isolating (i) the first outer selected word line of an erase group, from (ii) the first unselected word line outside the ease group neighboring the first outer selected word line.

摘要翻译： 各种讨论的方法改进了过度擦除问题和耦合效应，并且包括（A）（i）擦除组的第一外部选定字线之间的多电平接触，以及（ii）与易失性组相邻的第一未选择字线 第一外选字线; （B）在（i）擦除组的第一外部选择字线之间的足够的间隔距离，和（ii）与第一外部选择字线相邻的容易组之外的第一未选择字线。 这些是将（i）擦除组的第一外部选择的字线从（ii）与第一外部选择字线相邻的易用组之外的第一未选择字线电隔离的示例。

公开(公告)号：US20110317493A1

公开(公告)日：2011-12-29

申请号：US12826280

申请日：2010-06-29

申请人： Yi-Fan Chang ,  Su-chueh Lo ,  Cheng Ming Yih ,  Ta Kang Chu ,  Chu Ching Wu ,  Kuo Yu Liao ,  Ken Hui Chen ,  Kuen-Long Chang ,  Chun-Hsiung Hung

发明人： Yi-Fan Chang ,  Su-chueh Lo ,  Cheng Ming Yih ,  Ta Kang Chu ,  Chu Ching Wu ,  Kuo Yu Liao ,  Ken Hui Chen ,  Kuen-Long Chang ,  Chun-Hsiung Hung

IPC分类号： G11C16/04

CPC分类号： G11C11/5635 ,  G11C16/0483 ,  G11C16/3418

摘要： Various discussed approaches improve the over erase issue and the coupling effect, and include (A) multilevel contacts between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line; (B) a sufficient separation distance between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line. These are examples of electrically isolating (i) the first outer selected word line of an erase group, from (ii) the first unselected word line outside the ease group neighboring the first outer selected word line.

摘要翻译： 各种讨论的方法改进了过度擦除问题和耦合效应，并且包括（A）（i）擦除组的第一外部选定字线之间的多电平接触，以及（ii）与易失性组相邻的第一未选择字线 第一外选字线; （B）在（i）擦除组的第一外部选择字线之间的足够的间隔距离，和（ii）与第一外部选择字线相邻的容易组之外的第一未选择字线。 这些是将（i）擦除组的第一外部选择的字线从（ii）与第一外部选择字线相邻的易用组之外的第一未选择字线电隔离的示例。

公开(公告)号：US08508993B2

公开(公告)日：2013-08-13

申请号：US13567817

申请日：2012-08-06

申请人： Yi-Fan Chang ,  Su-chueh Lo ,  Cheng-Ming Yi ,  Ta Kang Chu ,  Chu Ching Wu ,  Kuo Yu Liao ,  Ken Hui Chen ,  Kuen Long Chang ,  Chun Hsiung Hung

发明人： Yi-Fan Chang ,  Su-chueh Lo ,  Cheng-Ming Yi ,  Ta Kang Chu ,  Chu Ching Wu ,  Kuo Yu Liao ,  Ken Hui Chen ,  Kuen Long Chang ,  Chun Hsiung Hung

IPC分类号： G11C11/34

CPC分类号： G11C11/5635 ,  G11C16/0483 ,  G11C16/3418

摘要： Various discussed approaches improve the over erase issue and the coupling effect, and include (A) multilevel contacts between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line; (B) a sufficient separation distance between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line. These are examples of electrically isolating (i) the first outer selected word line of an erase group, from (ii) the first unselected word line outside the ease group neighboring the first outer selected word line.

摘要翻译： 各种讨论的方法改进了过度擦除问题和耦合效应，并且包括（A）（i）擦除组的第一外部选定字线之间的多电平接触，以及（ii）与易失性组相邻的第一未选择字线 第一外选字线; （B）在（i）擦除组的第一外部选择字线之间的足够的间隔距离，和（ii）与第一外部选择字线相邻的容易组之外的第一未选择字线。 这些是将（i）擦除组的第一外部选择的字线从（ii）与第一外部选择字线相邻的易用组之外的第一未选择字线电隔离的示例。

公开(公告)号：US06178132B1

公开(公告)日：2001-01-23

申请号：US09391917

申请日：1999-09-09

申请人： Han Sung Chen ,  Chun Hsiung Hung ,  Kuo Yu Liao ,  Ray Lin Wan

发明人： Han Sung Chen ,  Chun Hsiung Hung ,  Kuo Yu Liao ,  Ray Lin Wan

IPC分类号： G11C800

CPC分类号： G11C16/08 ,  G11C2216/22

摘要： A non-volatile integrated circuit memory, such as a flash memory device based on floating gate transistor memory cells, with read while write capability is provided using a single address register. The integrated circuit includes at least two independent arrays of memory cells. During a program or an erase operation in one array on the non-volatile integrated circuit, a read operation can be executed in the other array on the same integrated circuit by bypassing the address register altogether, and allowing the register to remain in use by the program or erase operation. A bypass combinatorial logic path for the read process is coupled to the same address inputs as the address register, and operable in parallel with the registered address path.

摘要翻译： 使用单个地址寄存器来提供非易失性集成电路存储器，例如基于浮栅晶体管存储器单元的闪速存储器件，具有读写能力。 集成电路包括至少两个独立的存储单元阵列。 在非易失性集成电路中的一个阵列中的程序或擦除操作期间，可以通过绕过地址寄存器来在同一集成电路上的另一个阵列中执行读取操作，并允许寄存器由 编程或擦除操作。 用于读取处理的旁路组合逻辑路径被耦合到与地址寄存器相同的地址输入，并且与注册的地址路径并行操作。