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1.发明授权Method and apparatus of performing an erase operation on a memory integrated circuit 有权在存储器集成电路上执行擦除操作的方法和装置公开(公告)号：US08259499B2
公开(公告)日：2012-09-04
申请号：US12826280
申请日：2010-06-29
申请人： Yi-Fan Chang , Su-chueh Lo , Cheng Ming Yih , Ta Kang Chu , Chu Ching Wu , Kuo Yu Liao , Ken Hui Chen , Kuen-Long Chang , Chun-Hsiung Hung
发明人： Yi-Fan Chang , Su-chueh Lo , Cheng Ming Yih , Ta Kang Chu , Chu Ching Wu , Kuo Yu Liao , Ken Hui Chen , Kuen-Long Chang , Chun-Hsiung Hung
IPC分类号： G11C11/34
CPC分类号： G11C11/5635 , G11C16/0483 , G11C16/3418
摘要： Various discussed approaches improve the over erase issue and the coupling effect, and include (A) multilevel contacts between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line; (B) a sufficient separation distance between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line. These are examples of electrically isolating (i) the first outer selected word line of an erase group, from (ii) the first unselected word line outside the ease group neighboring the first outer selected word line.
摘要翻译： 各种讨论的方法改进了过度擦除问题和耦合效应，并且包括（A）（i）擦除组的第一外部选定字线之间的多电平接触，以及（ii）与易失性组相邻的第一未选择字线 第一外选字线; （B）在（i）擦除组的第一外部选择字线之间的足够的间隔距离，和（ii）与第一外部选择字线相邻的容易组之外的第一未选择字线。 这些是将（i）擦除组的第一外部选择的字线从（ii）与第一外部选择字线相邻的易用组之外的第一未选择字线电隔离的示例。
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2.发明申请Method and Apparatus of Performing An Erase Operation on a Memory Integrated Circuit 有权在存储器集成电路上执行擦除操作的方法和装置公开(公告)号：US20110317493A1
公开(公告)日：2011-12-29
申请号：US12826280
申请日：2010-06-29
申请人： Yi-Fan Chang , Su-chueh Lo , Cheng Ming Yih , Ta Kang Chu , Chu Ching Wu , Kuo Yu Liao , Ken Hui Chen , Kuen-Long Chang , Chun-Hsiung Hung
发明人： Yi-Fan Chang , Su-chueh Lo , Cheng Ming Yih , Ta Kang Chu , Chu Ching Wu , Kuo Yu Liao , Ken Hui Chen , Kuen-Long Chang , Chun-Hsiung Hung
IPC分类号： G11C16/04
CPC分类号： G11C11/5635 , G11C16/0483 , G11C16/3418
摘要： Various discussed approaches improve the over erase issue and the coupling effect, and include (A) multilevel contacts between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line; (B) a sufficient separation distance between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line. These are examples of electrically isolating (i) the first outer selected word line of an erase group, from (ii) the first unselected word line outside the ease group neighboring the first outer selected word line.
摘要翻译： 各种讨论的方法改进了过度擦除问题和耦合效应，并且包括（A）（i）擦除组的第一外部选定字线之间的多电平接触，以及（ii）与易失性组相邻的第一未选择字线 第一外选字线; （B）在（i）擦除组的第一外部选择字线之间的足够的间隔距离，和（ii）与第一外部选择字线相邻的容易组之外的第一未选择字线。 这些是将（i）擦除组的第一外部选择的字线从（ii）与第一外部选择字线相邻的易用组之外的第一未选择字线电隔离的示例。
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3.发明申请Method and Apparatus of Performing An Erase Operation On A Memory Integrated Circuit 有权在存储器集成电路中执行擦除操作的方法和装置公开(公告)号：US20120300553A1
公开(公告)日：2012-11-29
申请号：US13567817
申请日：2012-08-06
申请人： Yi-Fan Chang , Su-chueh Lo , Cheng Ming Yih , Ta Kang Chu , Chu Ching Wu , Kuo Yu Liao , Ken Hui Chen , Kuen-Long Chang , Chun-Hsiung Hung
发明人： Yi-Fan Chang , Su-chueh Lo , Cheng Ming Yih , Ta Kang Chu , Chu Ching Wu , Kuo Yu Liao , Ken Hui Chen , Kuen-Long Chang , Chun-Hsiung Hung
IPC分类号： G11C16/04
CPC分类号： G11C11/5635 , G11C16/0483 , G11C16/3418
摘要： Various discussed approaches improve the over erase issue and the coupling effect, and include (A) multilevel contacts between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line; (B) a sufficient separation distance between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line. These are examples of electrically isolating (i) the first outer selected word line of an erase group, from (ii) the first unselected word line outside the ease group neighboring the first outer selected word line.
摘要翻译： 各种讨论的方法改进了过度擦除问题和耦合效应，并且包括（A）（i）擦除组的第一外部选定字线之间的多电平接触，以及（ii）与易失性组相邻的第一未选择字线 第一外选字线; （B）在（i）擦除组的第一外部选择字线之间的足够的间隔距离，和（ii）与第一外部选择字线相邻的容易组之外的第一未选择字线。 这些是将（i）擦除组的第一外部选择的字线从（ii）与第一外部选择字线相邻的易用组之外的第一未选择字线电隔离的示例。
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4.发明授权Method and apparatus of performing an erase operation on a memory integrated circuit 有权在存储器集成电路上执行擦除操作的方法和装置公开(公告)号：US08508993B2
公开(公告)日：2013-08-13
申请号：US13567817
申请日：2012-08-06
申请人： Yi-Fan Chang , Su-chueh Lo , Cheng-Ming Yi , Ta Kang Chu , Chu Ching Wu , Kuo Yu Liao , Ken Hui Chen , Kuen Long Chang , Chun Hsiung Hung
发明人： Yi-Fan Chang , Su-chueh Lo , Cheng-Ming Yi , Ta Kang Chu , Chu Ching Wu , Kuo Yu Liao , Ken Hui Chen , Kuen Long Chang , Chun Hsiung Hung
IPC分类号： G11C11/34
CPC分类号： G11C11/5635 , G11C16/0483 , G11C16/3418
摘要： Various discussed approaches improve the over erase issue and the coupling effect, and include (A) multilevel contacts between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line; (B) a sufficient separation distance between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line. These are examples of electrically isolating (i) the first outer selected word line of an erase group, from (ii) the first unselected word line outside the ease group neighboring the first outer selected word line.
摘要翻译： 各种讨论的方法改进了过度擦除问题和耦合效应，并且包括（A）（i）擦除组的第一外部选定字线之间的多电平接触，以及（ii）与易失性组相邻的第一未选择字线 第一外选字线; （B）在（i）擦除组的第一外部选择字线之间的足够的间隔距离，和（ii）与第一外部选择字线相邻的容易组之外的第一未选择字线。 这些是将（i）擦除组的第一外部选择的字线从（ii）与第一外部选择字线相邻的易用组之外的第一未选择字线电隔离的示例。
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5.发明申请Method and Apparatus of Performing an Erase Operation on a Memory Integrated Circuit 有权在存储器集成电路上执行擦除操作的方法和装置公开(公告)号：US20110128791A1
公开(公告)日：2011-06-02
申请号：US12834686
申请日：2010-07-12
申请人： Yi-Fan Chang , Cheng Ming Yih , Su-chueh Lo , Jian Shing Liu , Kuen-Long Chang , Chun-Hsiung Hung
发明人： Yi-Fan Chang , Cheng Ming Yih , Su-chueh Lo , Jian Shing Liu , Kuen-Long Chang , Chun-Hsiung Hung
CPC分类号： G11C16/14 , G11C16/344 , G11C16/3477
摘要： Various discussed approaches include an improved grouping of edge word lines and center word lines of an erase group during erase verify and erase sub-operations of an erase operation. In another approach, changed voltage levels of edge word lines to address the over-erase issue of the erase group, and also improve erase time performance. Another approach uses dummy word lines.
摘要翻译： 各种讨论的方法包括在擦除验证和擦除擦除操作的子操作期间改进擦除组的边缘字线和中心字线的分组。 在另一种方法中，改变边缘字线的电压电平以解决擦除组的过擦除问题，并且还提高擦除时间性能。 另一种方法使用虚拟字线。
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6.发明申请Method and Apparatus of Performing An Erase Operation On A Memory Integrated Circuit 有权在存储器集成电路中执行擦除操作的方法和装置公开(公告)号：US20130100745A1
公开(公告)日：2013-04-25
申请号：US13708102
申请日：2012-12-07
申请人： Yi-Fan Chang , Cheng Ming Yih , Su-chueh Lo , Jian Shing Liu , Kuen Long Chang , Chun-Hsiung Hung
发明人： Yi-Fan Chang , Cheng Ming Yih , Su-chueh Lo , Jian Shing Liu , Kuen Long Chang , Chun-Hsiung Hung
IPC分类号： G11C16/14
CPC分类号： G11C16/14 , G11C16/344 , G11C16/3477
摘要： Various discussed approaches include an improved grouping of edge word lines and center word lines of an erase group during erase verify and erase sub-operations of an erase operation. In another approach, changed voltage levels of edge word lines to address the over-erase issue of the erase group, and also improve erase time performance. Another approach uses dummy word lines.
摘要翻译： 各种讨论的方法包括在擦除验证和擦除擦除操作的子操作期间改进擦除组的边缘字线和中心字线的分组。 在另一种方法中，改变边缘字线的电压电平以解决擦除组的过擦除问题，并且还提高擦除时间性能。 另一种方法使用虚拟字线。
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7.发明授权Method and apparatus of performing an erase operation on a memory integrated circuit 有权在存储器集成电路上执行擦除操作的方法和装置公开(公告)号：US08547755B2
公开(公告)日：2013-10-01
申请号：US13708102
申请日：2012-12-07
申请人： Yi-Fan Chang , Cheng Ming Yih , Su-chueh Lo , Jian Shing Liu , Kuen Long Chang , Chun-Hsiung Hung
发明人： Yi-Fan Chang , Cheng Ming Yih , Su-chueh Lo , Jian Shing Liu , Kuen Long Chang , Chun-Hsiung Hung
CPC分类号： G11C16/14 , G11C16/344 , G11C16/3477
摘要： Various discussed approaches include an improved grouping of edge word lines and center word lines of an erase group during erase verify and erase sub-operations of an erase operation. In another approach, changed voltage levels of edge word lines to address the over-erase issue of the erase group, and also improve erase time performance. Another approach uses dummy word lines.
摘要翻译： 各种讨论的方法包括在擦除验证和擦除擦除操作的子操作期间改进擦除组的边缘字线和中心字线的分组。 在另一种方法中，改变边缘字线的电压电平以解决擦除组的过擦除问题，并且还提高擦除时间性能。 另一种方法使用虚拟字线。
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8.发明授权Method and apparatus of performing an erase operation on a memory integrated circuit 有权在存储器集成电路上执行擦除操作的方法和装置公开(公告)号：US08339861B2
公开(公告)日：2012-12-25
申请号：US12834686
申请日：2010-07-12
申请人： Yi-Fan Chang , Cheng Ming Yih , Su-chueh Lo , Jian Shing Liu , Kuen-Long Chang , Chun-Hsiung Hung
发明人： Yi-Fan Chang , Cheng Ming Yih , Su-chueh Lo , Jian Shing Liu , Kuen-Long Chang , Chun-Hsiung Hung
CPC分类号： G11C16/14 , G11C16/344 , G11C16/3477
摘要： Various discussed approaches include an improved grouping of edge word lines and center word lines of an erase group during erase verify and erase sub-operations of an erase operation. In another approach, changed voltage levels of edge word lines to address the over-erase issue of the erase group, and also improve erase time performance. Another approach uses dummy word lines.
摘要翻译： 各种讨论的方法包括在擦除验证和擦除擦除操作的子操作期间改进擦除组的边缘字线和中心字线的分组。 在另一种方法中，改变边缘字线的电压电平以解决擦除组的过擦除问题，并且还提高擦除时间性能。 另一种方法使用虚拟字线。
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