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公开(公告)号:US20100240220A1
公开(公告)日:2010-09-23
申请号:US12721961
申请日:2010-03-11
申请人: Yi-Wei CHIU , Yih Song CHIU , Tzu Chan WENG , Jeng Chang HER
发明人: Yi-Wei CHIU , Yih Song CHIU , Tzu Chan WENG , Jeng Chang HER
IPC分类号: H01L21/3065
CPC分类号: H01L21/31138 , G03F7/427 , H01L21/02063 , H01L21/31116 , H01L21/76802 , H01L21/76814 , H01L24/03 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01059 , H01L2924/01074 , H01L2924/10329 , H01L2924/14 , H01L2924/19041
摘要: A process of stripping a patterned photoresist layer and removing a dielectric liner includes performing an oxygen-containing plasma dry etch process and performing a fluorine-containing plasma dry etch process in the same reaction chamber at a process temperature less than 120° C.
摘要翻译: 剥离图案化的光致抗蚀剂层并去除介电衬垫的工艺包括执行含氧等离子体干蚀刻工艺,并且在相同的反应室中在低于120℃的工艺温度下进行含氟等离子体干蚀刻工艺。