公开(公告)号：US20100240220A1

公开(公告)日：2010-09-23

申请号：US12721961

申请日：2010-03-11

Applicant: Yi-Wei CHIU ,  Yih Song CHIU ,  Tzu Chan WENG ,  Jeng Chang HER

Inventor： Yi-Wei CHIU ,  Yih Song CHIU ,  Tzu Chan WENG ,  Jeng Chang HER

IPC: H01L21/3065

CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76814 ,  H01L24/03 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19041

Abstract: A process of stripping a patterned photoresist layer and removing a dielectric liner includes performing an oxygen-containing plasma dry etch process and performing a fluorine-containing plasma dry etch process in the same reaction chamber at a process temperature less than 120° C.

Abstract translation: 剥离图案化的光致抗蚀剂层并去除介电衬垫的工艺包括执行含氧等离子体干蚀刻工艺，并且在相同的反应室中在低于120℃的工艺温度下进行含氟等离子体干蚀刻工艺。

公开(公告)号：US20060019479A1

公开(公告)日：2006-01-26

申请号：US10895509

申请日：2004-07-20

Applicant: Yih-Song Chiu ,  Wen-Ting Tsai ,  Jao-Sheng Huang ,  Chen-Hsiang Leu

Inventor： Yih-Song Chiu ,  Wen-Ting Tsai ,  Jao-Sheng Huang ,  Chen-Hsiang Leu

IPC: H01L21/3205

CPC classification number: H01L29/6653 ,  H01L22/12

Abstract: A feed-forward method and apparatus for controlling spacer width measures spacer width during processing then further processes the spacers in a spacer width adjustment operation to achieve a desired final spacer width. Silicon nitride spacers may be measured after plasma etching and the measured spacer width is automatically compared to the final desired spacer width and a time for further processing is calculated based on a correlation between processing time and spacer width loss. Using computer interface manufacturing, the measured spacer width data is provided to a computer that performs the calculation and provides the further processing time or a recipe to the tool used for the spacer width adjustment operation. The spacer width adjustment operation may be wet processing in an SPM solution that oxidizes the spacers and an HF clean operation may be used to remove the oxidized portion and yield spacer widths within acceptable specification limits.

公开(公告)号：US08049213B2

公开(公告)日：2011-11-01

申请号：US11958942

申请日：2007-12-18

Applicant: Ching-Chung Su ,  Yi-Wei Chiu ,  Tzu Chan Weng ,  Yih Song Chiu ,  Pin Chia Su ,  Chih-Cherng Jeng ,  Kuo-Hsiu Wei

Inventor： Ching-Chung Su ,  Yi-Wei Chiu ,  Tzu Chan Weng ,  Yih Song Chiu ,  Pin Chia Su ,  Chih-Cherng Jeng ,  Kuo-Hsiu Wei

IPC: H01L21/66 ,  H01L23/544

CPC classification number: H01L22/14 ,  H01L22/12 ,  H01L22/20

Abstract: A method of measuring dimensional characteristics includes providing a substrate and forming a reflective layer over the substrate. A dielectric layer is then formed over the reflective layer. The dielectric layer includes a grating pattern and a resistivity test line inset in a transparent region. Radiation is then directed onto the dielectric layer so that some of the radiation is transmitted through the transparent region to the reflective layer. A radiation pattern is then detected from the radiation reflected and scattered by the metal grating pattern. The radiation pattern is analyzed to determine a first dimensional information. Then the resistance of the resistivity test line is measured, and that resistance is analyzed to determine a second dimensional information. The first and second dimensional informations are then compared.

Abstract translation: 测量尺寸特性的方法包括提供衬底并在衬底上形成反射层。 然后在反射层上形成电介质层。 电介质层包括在透明区域内插入的光栅图案和电阻率测试线。 然后将辐射引导到电介质层上，使得一些辐射透过透明区域到达反射层。 然后从由金属光栅图案反射和散射的辐射中检测出辐射图。 分析辐射图以确定第一维信息。 然后测量电阻率测试线的电阻，并分析该电阻以确定第二维信息。 然后比较第一和第二维信息。

公开(公告)号：US20090152545A1

公开(公告)日：2009-06-18

申请号：US11958942

申请日：2007-12-18

Applicant: Ching-Chung Su ,  Yi-Wei Chiu ,  Tzu-Chan Weng ,  Yih Song Chiu ,  Pin Chia Su ,  Chih-Cherng Jeng ,  Kuo-Hsiu Wei

Inventor： Ching-Chung Su ,  Yi-Wei Chiu ,  Tzu-Chan Weng ,  Yih Song Chiu ,  Pin Chia Su ,  Chih-Cherng Jeng ,  Kuo-Hsiu Wei

IPC: H01L23/58 ,  H01L21/66

CPC classification number: H01L22/14 ,  H01L22/12 ,  H01L22/20

Abstract: A method of measuring dimensional characteristics includes providing a substrate and forming a reflective layer over the substrate. A dielectric layer is then formed over the reflective layer. The dielectric layer includes a grating pattern and a resistivity test line inset in a transparent region. Radiation is then directed onto the dielectric layer so that some of the radiation is transmitted through the transparent region to the reflective layer. A radiation pattern is then detected from the radiation reflected and scattered by the metal grating pattern. The radiation pattern is analyzed to determine a first dimensional information. Then the resistance of the resistivity test line is measured, and that resistance is analyzed to determine a second dimensional information. The first and second dimensional informations are then compared.

Abstract translation: 测量尺寸特性的方法包括提供衬底并在衬底上形成反射层。 然后在反射层上形成电介质层。 电介质层包括在透明区域内插入的光栅图案和电阻率测试线。 然后将辐射引导到电介质层上，使得一些辐射透过透明区域到达反射层。 然后从由金属光栅图案反射和散射的辐射中检测出辐射图。 分析辐射图以确定第一维信息。 然后测量电阻率测试线的电阻，并分析该电阻以确定第二维信息。 然后比较第一和第二维信息。

公开(公告)号：US07064085B2

公开(公告)日：2006-06-20

申请号：US10895509

申请日：2004-07-20

Applicant: Yih-Song Chiu ,  Wen-Ting Tsai ,  Jao-Sheng Huang ,  Chen-Hsiang Leu

Inventor： Yih-Song Chiu ,  Wen-Ting Tsai ,  Jao-Sheng Huang ,  Chen-Hsiang Leu

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L29/6653 ,  H01L22/12

Abstract: A feed-forward method and apparatus for controlling spacer width measures spacer width during processing then further processes the spacers in a spacer width adjustment operation to achieve a desired final spacer width. Silicon nitride spacers may be measured after plasma etching and the measured spacer width is automatically compared to the final desired spacer width and a time for further processing is calculated based on a correlation between processing time and spacer width loss. Using computer interface manufacturing, the measured spacer width data is provided to a computer that performs the calculation and provides the further processing time or a recipe to the tool used for the spacer width adjustment operation. The spacer width adjustment operation may be wet processing in an SPM solution that oxidizes the spacers and an HF clean operation may be used to remove the oxidized portion and yield spacer widths within acceptable specification limits.

Abstract translation: 用于控制间隔物宽度的前馈方法和装置在处理期间测量间隔物宽度，然后在间隔物宽度调节操作中进一步处理间隔物以实现期望的最终间隔物宽度。 可以在等离子体蚀刻之后测量氮化硅间隔物，并且将测量的间隔物宽度自动与最终期望的间隔物宽度进行比较，并且基于处理时间和间隔物宽度损失之间的相关性计算进一步处理的时间。 使用计算机接口制造，将测量的间隔物宽度数据提供给执行计算的计算机，并为用于间隔物宽度调节操作的工具提供进一步的处理时间或配方。 间隔物宽度调节操作可以是氧化间隔物的SPM溶液中的湿法处理，并且可以使用HF清洁操作来去除氧化部分并且在可接受的规格限度内产生间隔物宽度。

公开(公告)号：US06972241B2

公开(公告)日：2005-12-06

申请号：US10761656

申请日：2004-01-20

Applicant: Yih Song Chiu ,  Jao Sheng Huang ,  Wen Ting Tsai ,  Chen Hsiang Leu

Inventor： Yih Song Chiu ,  Jao Sheng Huang ,  Wen Ting Tsai ,  Chen Hsiang Leu

IPC: H01L21/762 ,  H01L21/76

CPC classification number: H01L21/76232

Abstract: A method for forming shallow trench isolation (STI) structure including providing a substrate comprising an overlying hardmask layer; patterning the hardmask layer to form a hardmask layer opening for etching a trench through a substrate thickness portion; etching a trench according to the patterned overlying hardmask layer; carrying out a wet chemical oxidizing process to form an oxidized surface portion on the hardmask layer; carrying out a wet chemical etching process to remove at least a portion of the oxidized surface portion to form the hardmask opening having an enlarged width and the trench opening comprising rounded upper corners; and, forming a completed planarized STI structure filled with oxide.

Abstract translation: 一种用于形成浅沟槽隔离（STI）结构的方法，包括提供包括上覆硬掩模层的衬底; 图案化硬掩模层以形成用于通过衬底厚度部分蚀刻沟槽的硬掩模层开口; 根据图案化的覆盖硬掩模层蚀刻沟槽; 进行湿化学氧化处理以在硬掩模层上形成氧化表面部分; 执行湿化学蚀刻工艺以去除氧化表面部分的至少一部分以形成具有扩大宽度的硬掩模开口，并且沟槽开口包括圆形上角部; 并且形成填充有氧化物的完成的平坦化STI结构。