摘要:
A thin film transistor composed of a gate dielectric which includes a radiation-induced crosslinked polymer composed of polymerized one or more monomers, wherein the one or more monomers include an optionally substituted vinyl arylalcohol.
摘要:
A thienylene-arylene polymer comprised of a repeating segment containing at least one 2,5-thienylene unit selected from (I) and (II), and from about one to about three arylene units selected from (IIIa), (IIIb), and/or (IIIc) wherein R is an alkyl or an alkoxy; R′ is halogen, alkyl, or alkoxy, and a and b represent the number of Rs.
摘要:
An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.
摘要:
An electronic device containing a polymer of Formula (I), Formula (II), or mixtures, or isomers thereof wherein each R1 through R10 is independently hydrogen, alkyl, aryl, alkoxy, halogen, arylalkyl, cyano, or nitro providing that R1 and R2 exclude halogen, nitro and cyano; a and b represent the number of rings; and n represents the number of repeating groups or moieties.
摘要:
An electronic device like a thin film transistor containing an arylamine polymer of the formula wherein Ar is aryl or heteroaryl; X represents CH2, sulfur, oxygen, selenium, NR′, or SiR″2 wherein R′ and R″ are each a suitable hydrocarbon; m represents the number of X substituents; and n represents the number of repeating units.
摘要:
A polythiophene wherein the monomer segments thereof contain wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent linkages D is 0 or 1.
摘要:
An organic thin-film transistor has a p-type semiconducting layer, wherein the semiconducting layer comprises a crystalline conjugated polyarylamine of the chemical structure: wherein R1 through R5 are independently selected from hydrogen, alkyl having from about 1 to about 30 carbon atoms, aryl having from about 6 to about 40 carbon atoms, heteroaryl having from about 3 to about 40 atoms, alkoxy having from about 1 to about 30 carbon atoms, aryloxy having from about 6 to about 40 carbon atoms, and substituted derivatives thereof; wherein A and B are the same or different independently selected from arylenes having from about 6 to about 20 carbon atoms or heteroarylenes having from about 3 to about 20 carbon atoms; and wherein n is the degree of polymerization; and wherein the polyarylamine has a mobility (μ0) of 10−4 cm2/V·sec or greater.