摘要:
A semiconductor die (20) includes a substrate (30) and microelectronic devices (22, 26) located at a surface (32) of the substrate (30). A cap (34) is coupled to the substrate (30), and the microelectronic device (22) is positioned in the cavity (24). An outgassing material structure (36) is located within a cavity (24) between the cap (34) and the substrate (30). The outgassing material structure (36) releases trapped gas (37) to increase the pressure within the cavity (24) from an initial pressure level (96) to a second pressure level (94). The cap (34) may include another cavity (28) containing another microelectronic device (26). A getter material (42) may be located within the cavity (28). The getter material (42) is activated to absorb residual gas (46) in the cavity (28) and decrease the pressure within the cavity (28) from the initial pressure level (96) to a third pressure level (92).
摘要:
A multi-die sensor system comprises a package and one or more transducer dies mounted in the package. Each transducer die includes one or more transducers, a temperature control element, and temperature sensor. The temperature control element changes the temperature of at least a portion of the transducer during operation of the temperature control element. A temperature sensor senses the temperature of at least the portion of the transducer. An output circuitry die mounted in the package receives transducer signals and a sensed temperature signal from the temperature sensor.
摘要:
A multi-die sensor system comprises a package and one or more transducer dies mounted in the package. Each transducer die includes one or more transducers, a temperature control element, and temperature sensor. The temperature control element changes the temperature of at least a portion of the transducer during operation of the temperature control element. A temperature sensor senses the temperature of at least the portion of the transducer. An output circuitry die mounted in the package receives transducer signals and a sensed temperature signal from the temperature sensor.
摘要:
A tester configured to test a strip of devices is provided. The tester may include a communications system, a plurality of communication lines, a plurality of multiplexors, each multiplexor having at least two outputs, wherein each multiplexor is configured to receive a signal generated by the communications system via one of the plurality of communication lines, and each multiplexor may be selectably coupled to at least two of the devices in the strip of devices. The tester may be configured to index the plurality of communication lines to a first subset of the devices, initiate at least one test, command the devices to generate data for each of the at least one tests, retrieve data from a first set of the devices, and retrieve data from a second set of the devices.
摘要:
A tester configured to test a strip of devices is provided. The tester may include a communications system, a plurality of communication lines, a plurality of multiplexors, each multiplexor having at least two outputs, wherein each multiplexor is configured to receive a signal generated by the communications system via one of the plurality of communication lines, and each multiplexor may be selectably coupled to at least two of the devices in the strip of devices. The tester may be configured to index the plurality of communication lines to a first subset of the devices, initiate at least one test, command the devices to generate data for each of the at least one tests, retrieve data from a first set of the devices, and retrieve data from a second set of the devices.
摘要:
A method for testing a pressure sensor having a first node and a second node includes coupling the first node to a first input of an amplifier and coupling a reference voltage to a second input of the amplifier; applying a transfer function to an output of the amplifier to provide a first output voltage that is based on a difference in voltage between the first node and the reference voltage; coupling the reference voltage to the first input and coupling the second node to the second input; obtaining a second output voltage at the output of the amplifier; and determining, based on the first and second output voltages, whether the pressure sensor passed or failed. During normal operation, the first node is coupled to the first input and the second node to the second input, and a second transfer function is applied to the output of the amplifier.
摘要:
A method and system to calibrate temperature and pressure in piezo resistive devices for non-linear sensors having two variables, where a piezo resistive device such as a piezo resistive transducer (PRT) used for example in a pressure sensor system is calibrated to calculate actual/ambient temperature and pressure even though the PRT impedance is unbalanced relative to pressure.
摘要:
A microelectromechanical systems (MEMS) device (58) includes a structural layer (78) having a top surface (86). The top surface (86) includes surface regions (92, 94) that are generally parallel to one another but are offset relative to one another such that a stress concentration location (90) is formed between them. Laterally propagating shallow surface cracks (44) have a tendency to form in the structural layer (78), especially near the joints (102) between the surface regions (92, 94). A method (50) entails fabricating (52) the MEMS device (58) and forming (54) trenches (56) in the top surface (86) of the structural layer (78) of the MEMS device (58). The trenches (56) act as a crack inhibition feature to largely prevent the formation of deep cracks in structural layer (78) which might otherwise result in MEMS device failure.
摘要:
Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.
摘要:
Apparatus, systems, and fabrication methods are provided for sensing devices. An exemplary sensing device includes a first sensing arrangement to measure a first property and provide one or more measured values for the first property, a second sensing arrangement to measure a second property, a storage element coupled to the second sensing arrangement to maintain a stored value for the second property measured by the second sensing arrangement, and a control system coupled to the first sensing arrangement and the storage element to determine one or more calibrated measurement values for the first property using the one or more measured values for the first property from the first sensing arrangement and the stored value for the second property.