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    DATA STORAGE SYSTEM AND DEVICE WITH RANDOMIZER/DE-RANDOMIZER
    2.
    发明申请
    DATA STORAGE SYSTEM AND DEVICE WITH RANDOMIZER/DE-RANDOMIZER 有权
    数据存储系统和带有RANDOMIZER / DE-RANDOMIZER的设备

    公开(公告)号：US20100088574A1

    公开(公告)日：2010-04-08

    申请号：US12573246

    申请日：2009-10-05

    申请人： Yong June KIM ,  Jun Jin KONG ,  Jae Hong KIM ,  Kyoung Lae CHO

    发明人： Yong June KIM ,  Jun Jin KONG ,  Jae Hong KIM ,  Kyoung Lae CHO

    IPC分类号： G06F11/10 ,  G06F12/00

    CPC分类号： G06F11/1008

    摘要： A data storage device receives write data and includes a controller configured to determine a characteristic of the write data and provide a first control signal in response to the determined characteristic, a randomizer configured to selectively randomize or not randomize the write data in response to the first control signal to thereby generate randomized write data, and a data storage unit configured to store the randomized write data.

    摘要翻译： 数据存储装置接收写入数据，并且包括控制器，被配置为确定写入数据的特性并响应于所确定的特性提供第一控制信号;随机化器，被配置为响应于第一个数据，选择性地随机化或不使写入数据随机化 从而生成随机写入数据，以及数据存储单元，被配置为存储随机写入数据。

    Semiconductor Memory Systems that Include Data Randomizers and Related Devices, Controllers and Methods
    3.
    发明申请
    Semiconductor Memory Systems that Include Data Randomizers and Related Devices, Controllers and Methods 审中-公开
    包含数据随机器和相关器件，控制器和方法的半导体存储器系统

    公开(公告)号：US20120215963A1

    公开(公告)日：2012-08-23

    申请号：US13303512

    申请日：2011-11-23

    申请人： Yong June KIM ,  Jung Soo CHUNG ,  Jun Jin KONG ,  Kyoung Lae CHO

    发明人： Yong June KIM ,  Jung Soo CHUNG ,  Jun Jin KONG ,  Kyoung Lae CHO

    IPC分类号： G06F12/00 ,  G06F12/02

    CPC分类号： G06F13/16 ,  G11C7/1006

    摘要： A semiconductor memory system and a programming method performed by the same. The semiconductor memory system includes: a semiconductor memory device having a storage area; a memory controller for controlling programming and reading of the storage area of the semiconductor memory device; at least one first randomizer for changing program data to be programmed into the storage area to first random data by using a first sequence in a first period; and at least one second randomizer for changing the first random data to second random data by using a second sequence in a second period that is different from the first period.

    摘要翻译： 半导体存储器系统及其编程方法。 半导体存储器系统包括：具有存储区域的半导体存储器件; 用于控制半导体存储器件的存储区域的编程和读取的存储器控​​制器; 至少一个第一随机化器，用于通过在第一周期中使用第一序列来将要被编程到所述存储区域中的程序数据改变为第一随机数据; 以及至少一个第二随机化器，用于通过在与第一周期不同的第二周期中使用第二序列来将第一随机数据改变为第二随机数据。

    NON-VOLATILE MEMORY DEVICE, MEMORY CARD AND SYSTEM, AND METHOD DETERMINING READ VOLTAGE IN SAME
    4.
    发明申请
    NON-VOLATILE MEMORY DEVICE, MEMORY CARD AND SYSTEM, AND METHOD DETERMINING READ VOLTAGE IN SAME 失效
    非易失性存储器件，存储卡和系统以及确定读取电压的方法

    公开(公告)号：US20100118608A1

    公开(公告)日：2010-05-13

    申请号：US12614545

    申请日：2009-11-09

    申请人： Seung-Hwan SONG ,  Jaehong KIM ,  Kyoung Lae CHO ,  Yong June KIM ,  Jun Jin KONG ,  Jong Han KIM

    发明人： Seung-Hwan SONG ,  Jaehong KIM ,  Kyoung Lae CHO ,  Yong June KIM ,  Jun Jin KONG ,  Jong Han KIM

    IPC分类号： G11C16/04 ,  G11C16/06

    CPC分类号： G11C16/26 ,  G11C11/5642 ,  G11C29/00 ,  G11C2211/5634

    摘要： A non-volatile semiconductor memory device and related method of determining a read voltage are disclosed. The non-volatile semiconductor memory device includes; a memory cell array including a plurality of memory cells, a read voltage determination unit configured to determine an optimal read voltage by comparing reference data obtained during a program operation with comparative data obtained during a subsequent read operation and changing a current read voltage to a new read voltage based on a result of the comparison, and a read voltage generation unit configured to generate the new read voltage in response to a read voltage control signal provided by the read voltage determination unit.

    摘要翻译： 公开了一种非易失性半导体存储器件及确定读取电压的相关方法。 非易失性半导体存储器件包括： 包括多个存储单元的存储单元阵列，读电压确定单元，被配置为通过将在编程操作期间获得的参考数据与在随后的读取操作期间获得的比较数据进行比较来确定最佳读取电压，并将当前读取电压改变为新的 基于比较结果的读取电压和读取电压生成单元，被配置为响应于由读取电压确定单元提供的读取电压控制信号而产生新的读取电压。

    DEVICE AND METHOD PROVIDING 1-BIT ERROR CORRECTION
    6.
    发明申请
    DEVICE AND METHOD PROVIDING 1-BIT ERROR CORRECTION 有权
    提供1位错误校正的设备和方法

    公开(公告)号：US20100174966A1

    公开(公告)日：2010-07-08

    申请号：US12651586

    申请日：2010-01-04

    申请人： Yong June KIM ,  Jae Hong KIM ,  Jun Jin KONG

    发明人： Yong June KIM ,  Jae Hong KIM ,  Jun Jin KONG

    IPC分类号： H03M13/05 ,  G06F11/10

    CPC分类号： G06F11/1008 ,  H03M13/1105 ,  H03M13/1108

    摘要： A 1-bit error correction method is provided. In the method, a variable node at which an error has occurred is detected based on a number of unsatisfied check nodes that do not satisfy a parity condition among check nodes connected to each of variable nodes and an error in a bit corresponding to the detected variable node is corrected.

    摘要翻译： 提供1位纠错方法。 在该方法中，基于在连接到每个可变节点的校验节点中不满足奇偶校验条件的不满足校验节点的数量和对应于检测变量的位的错误来检测发生错误的变量节点 节点被更正。

    METHOD AND APPARATUS FOR MODIFYING DATA SEQUENCES STORED IN MEMORY DEVICE
    8.
    发明申请
    METHOD AND APPARATUS FOR MODIFYING DATA SEQUENCES STORED IN MEMORY DEVICE 审中-公开
    用于修改存储器件中存储的数据序列的方法和装置

    公开(公告)号：US20110040929A1

    公开(公告)日：2011-02-17

    申请号：US12796896

    申请日：2010-06-09

    申请人： Yong June KIM ,  Jae Hong KIM ,  Jun Jin KONG

    发明人： Yong June KIM ,  Jae Hong KIM ,  Jun Jin KONG

    IPC分类号： G06F12/02 ,  G06F12/00

    CPC分类号： G06F11/10

    摘要： A method of modifying data sequences in a memory system comprises receiving program data having a first data sequence, and determining whether the received first data sequence matches one of “m” predefined sequences stored in the memory system. The method further comprises replacing the received first data sequence with a replacement sequence upon determining that the received first data sequence matches one of the “m” predefined sequences, and outputting the replacement sequence from the memory system. The replacement sequence typically comprises pattern bits indicating a pattern of the first data sequence and location bits indicating a start location of the first data sequence.

    摘要翻译： 一种在存储器系统中修改数据序列的方法包括：接收具有第一数据序列的程序数据，以及确定所接收的第一数据序列是否匹配存储在存储器系统中的“m”个预定序列之一。 该方法还包括在确定所接收的第一数据序列与“m”个预定义序列中的一个匹配并从存储器系统输出替换序列时，用替换序列替换所接收的第一数据序列。 替换序列通常包括指示第一数据序列的模式的模式比特和指示第一数据序列的开始位置的位置比特。

    MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
    10.
    发明申请
    MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME 审中-公开
    包括其的存储器件和存储器系统

    公开(公告)号：US20120290783A1

    公开(公告)日：2012-11-15

    申请号：US13467255

    申请日：2012-05-09

    申请人： Jung Soo CHUNG ,  Yong June KIM ,  Jun Jin KONG ,  Hongrak SON

    发明人： Jung Soo CHUNG ,  Yong June KIM ,  Jun Jin KONG ,  Hongrak SON

    IPC分类号： G06F12/00

    CPC分类号： G11C7/1006 ,  G11C7/1012 ,  G11C11/5628 ,  G11C16/0483

    摘要： A memory device including a randomizer and a memory system including the memory device are provided. The memory device includes: a randomizer including a sequence generator which generates a first sequence from a seed and a converter which converts the first sequence into a second sequence in response to a conversion factor, the randomizer randomizing data to be programmed using the second sequence and outputting the randomized data; and a storage area which receives the randomized data from the randomizer and storing the randomized data.

    摘要翻译： 提供了包括随机化器和包括存储器件的存储器系统的存储器件。 存储装置包括：随机化器，其包括从种子生成第一序列的序列发生器和响应于转换因子将第一序列转换为第二序列的转换器，随机化器使用第二序列随机化要编程的数据，以及 输出随机数据; 以及存储区域，其从随机化器接收随机数据并存储随机数据。