公开(公告)号：US20070095286A1

公开(公告)日：2007-05-03

申请号：US10559944

申请日：2005-07-20

申请人： Yong-Ku Baek ,  Seung-Hoon Lee

发明人： Yong-Ku Baek ,  Seung-Hoon Lee

IPC分类号： C23C16/00

CPC分类号： C23C16/45551 ,  C23C16/4412 ,  C23C16/45574 ,  C23C16/45589 ,  C23C16/509 ,  C30B25/14 ,  H01J2237/332

摘要： Disclosed herein is a thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor. The apparatus comprises: a gas supply means for supplying a plurality of gases to the inside of the reaction chamber from the outside, the gases including a reaction gas; a gas distribution means for distributing and spraying the gases supplied from the gas supply means so as to conform to the purpose of a process; a gas retaining means having a plurality of reaction cells for partitionally accommodating and retaining the respective gases distributed from the gas distribution means; a rotation driving means for rotating the gas retaining means such that the gases retained in the respective reaction cells are exposed to the substrates in sequence; and a gas exhaust means for pumping the gases retained by the gas retaining means to the outside of the reaction chamber.

摘要翻译： 本文公开了一种薄膜沉积设备，其具有用于在搁置在基座上的多个基板上形成薄膜的反应室。 该装置包括：从外部向反应室内部供给多个气体的气体供给装置，所述气体包括反应气体; 气体分配装置，用于分配和喷射从气体供应装置供应的气体以符合工艺的目的; 气体保持装置，具有多个用于部分地容纳和保持从气体分配装置分配的各种气体的反应池; 旋转驱动装置，用于旋转气体保持装置，使得保留在各个反应池中的气体依次暴露于基板; 以及用于将由气体保持装置保留的气体泵送到反应室外部的排气装置。

公开(公告)号：US08092598B2

公开(公告)日：2012-01-10

申请号：US10559944

申请日：2005-07-20

申请人： Yong-Ku Baek ,  Seung-Hoon Lee

发明人： Yong-Ku Baek ,  Seung-Hoon Lee

IPC分类号： C23C16/00

CPC分类号： C23C16/45551 ,  C23C16/4412 ,  C23C16/45574 ,  C23C16/45589 ,  C23C16/509 ,  C30B25/14 ,  H01J2237/332

摘要： Disclosed herein is a thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor. The apparatus comprises: a gas supply means for supplying a plurality of gases to the inside of the reaction chamber from the outside, the gases including a reaction gas; a gas distribution means for distributing and spraying the gases supplied from the gas supply means so as to conform to the purpose of a process; a gas retaining means having a plurality of reaction cells for partitionally accommodating and retaining the respective gases distributed from the gas distribution means; a rotation driving means for rotating the gas retaining means such that the gases retained in the respective reaction cells are exposed to the substrates in sequence; and a gas exhaust means for pumping the gases retained by the gas retaining means to the outside of the reaction chamber.

摘要翻译： 本文公开了一种薄膜沉积设备，其具有用于在搁置在基座上的多个基板上形成薄膜的反应室。 该装置包括：从外部向反应室内部供给多个气体的气体供给装置，所述气体包括反应气体; 气体分配装置，用于分配和喷射从气体供应装置供应的气体以符合工艺的目的; 气体保持装置，具有多个用于部分地容纳和保持从气体分配装置分配的各种气体的反应池; 旋转驱动装置，用于旋转气体保持装置，使得保留在各个反应池中的气体依次暴露于基板; 以及用于将由气体保持装置保留的气体泵送到反应室外部的排气装置。

公开(公告)号：US06534810B2

公开(公告)日：2003-03-18

申请号：US09749621

申请日：2000-12-28

申请人： Yong-Ku Baek

发明人： Yong-Ku Baek

IPC分类号： H01L2994

CPC分类号： H01L28/55 ,  H01L21/76895 ,  H01L27/10855

摘要： A semiconductor memory device including an active matrix comprising a semiconductor substrate, a transistor formed on the semiconductor substrate and isolation regions for isolating the transistor, a first metal pattern formed on top of the active matrix and extending outside the transistor, a capacitor structure formed over the transistor, a barrier layer formed on top of the capacitor structure to improve thermal stability, and a second metal pattern formed on top of the capacitor structure to electrically connect the capacitor structure to the transistor through the first and second metal patterns.

摘要翻译： 一种半导体存储器件，包括有源矩阵，包括半导体衬底，形成在半导体衬底上的晶体管和用于隔离晶体管的隔离区，形成在有源矩阵顶部并延伸到晶体管外部的第一金属图案， 晶体管，形成在电容器结构顶部以提高热稳定性的阻挡层，以及形成在电容器结构顶部上的第二金属图案，以通过第一和第二金属图案将电容器结构电连接到晶体管。

公开(公告)号：US06200821B1

公开(公告)日：2001-03-13

申请号：US09428626

申请日：1999-10-27

申请人： Yong-Ku Baek

发明人： Yong-Ku Baek

IPC分类号： H01L2100

CPC分类号： H01L27/11502 ,  H01L21/7687 ,  H01L21/76895 ,  H01L27/11507

摘要： A method for fabricating a ferroelectric random access memory device, includes the steps of: forming an interlayer insulating layer on a ferroelectric capacitor and a transistor; forming a first opening through the interlayer insulating layer in order to expose a top electrode of the ferroelectric capacitor; forming the barrier metal layer on the resulting structure on which the first opening is formed, wherein the barrier metal layer is in contact with the top electrode of the ferroelectric capacitor; selectively etching the barrier metal and interlayer insulating layers and forming a second opening in order to expose a junction layer of the transistor; forming a polysilicon layer on the resulting structure and doping impurity ions into the polysilicon layer, wherein the doped polysilicon layer is in contact with the junction layer of the transistor; and selectively etching the polysilicon and barrier metal layers, thereby patterning an interconnection layer for interconnecting the transistor and the ferroelectric capacitor, wherein the capacitor is electrically in contact with the interconnection layer via the barrier metal layer and the transistor is electrically in contact with the interconnection layer.

摘要翻译： 一种制造铁电随机存取存储器件的方法，包括以下步骤：在铁电电容器和晶体管上形成层间绝缘层; 形成通过所述层间绝缘层的第一开口以暴露所述强电介质电容器的顶部电极; 在其上形成有第一开口的结构上形成阻挡金属层，其中阻挡金属层与铁电电容器的顶电极接触; 选择性地蚀刻阻挡金属和层间绝缘层并形成第二开口以暴露晶体管的结层; 在所得结构上形成多晶硅层，并将杂质离子掺杂到多晶硅层中，其中掺杂多晶硅层与晶体管的结层接触; 并且选择性地蚀刻多晶硅和阻挡金属层，由此构图用于互连晶体管和铁电电容器的互连层，其中电容器经由阻挡金属层与互连层电接触，并且晶体管与互连电接触 层。

公开(公告)号：US06346440B1

公开(公告)日：2002-02-12

申请号：US09607522

申请日：2000-06-28

申请人： Yong-Ku Baek

发明人： Yong-Ku Baek

IPC分类号： H01L218242

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A semiconductor memory device includes an active matrix provided with a semiconductor substrate, a transistor formed on the semiconductor substrate and isolation regions for isolating the transistor, a first metal line formed on top of the active matrix and extending outside the transistor, a capacitor structure formed over the transistor and a second metal line formed on top of the capacitor structure to electrically connect the capacitor structure to the transistor through the first and the second metal lines. In the memory device, forming the capacitor structure at the position over the transistor can reduce the cell size of the memory cell.

摘要翻译： 半导体存储器件包括：具有半导体衬底的有源矩阵，形成在半导体衬底上的晶体管和用于隔离晶体管的隔离区，形成在有源矩阵顶部并延伸到晶体管外部的第一金属线，形成的电容器结构 并且形成在电容器结构的顶部上的第二金属线，以通过第一和第二金属线将电容器结构电连接到晶体管。 在存储器件中，在晶体管上方的位置形成电容器结构可以减小存储单元的单元尺寸。