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公开(公告)号：US07661879B2
公开(公告)日：2010-02-16
申请号：US11584651
申请日：2006-10-23
申请人： Yoon-Jae Shin , Sang-Jin Byun
发明人： Yoon-Jae Shin , Sang-Jin Byun
IPC分类号： G01K7/01
摘要： An apparatus for detecting a temperature using transistors includes a plurality of temperature detecting units that become selectively active according to predetermined temperature intervals; and a detection signal output unit that generates detection signals according to the signals transmitted by the plurality of temperature detecting units, and outputs the detection signals.
摘要翻译： 使用晶体管检测温度的装置包括多个温度检测单元，其根据预定的温度间隔变得有选择地活动; 以及检测信号输出单元，其根据由多个温度检测单元发送的信号产生检测信号，并输出检测信号。
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公开(公告)号：US08210744B2
公开(公告)日：2012-07-03
申请号：US12645727
申请日：2009-12-23
申请人： Yoon-Jae Shin , Sang-Jin Byun
发明人： Yoon-Jae Shin , Sang-Jin Byun
摘要： An apparatus for detecting a temperature using transistors includes a plurality of temperature detecting units that become selectively active according to predetermined temperature intervals; and a detection signal output unit that generates detection signals according to the signals transmitted by the plurality of temperature detecting units, and outputs the detection signals.
摘要翻译： 使用晶体管检测温度的装置包括多个温度检测单元，其根据预定的温度间隔变得有选择地活动; 以及检测信号输出单元，其根据由多个温度检测单元发送的信号产生检测信号，并输出检测信号。
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公开(公告)号：US20100098133A1
公开(公告)日：2010-04-22
申请号：US12645727
申请日：2009-12-23
申请人： Yoon-Jae Shin , Sang-Jin Byun
发明人： Yoon-Jae Shin , Sang-Jin Byun
IPC分类号： G01K7/00
摘要： An apparatus for detecting a temperature using transistors includes a plurality of temperature detecting units that become selectively active according to predetermined temperature intervals; and a detection signal output unit that generates detection signals according to the signals transmitted by the plurality of temperature detecting units, and outputs the detection signals.
摘要翻译： 使用晶体管检测温度的装置包括多个温度检测单元，其根据预定的温度间隔变得有选择地活动; 以及检测信号输出单元，其根据由多个温度检测单元发送的信号产生检测信号，并输出检测信号。
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4.发明授权公开(公告)号：US08183898B2
公开(公告)日：2012-05-22
申请号：US13180584
申请日：2011-07-12
申请人： Yoon-Jae Shin , Jun-Gi Choi
发明人： Yoon-Jae Shin , Jun-Gi Choi
IPC分类号： H03L7/00
CPC分类号： H03K17/145 , H03K19/00384 , Y10T307/696
摘要： A voltage supply apparatus includes a power noise sensing unit, a voltage selecting unit, a first power voltage supply unit and a second power voltage supply unit. The power noise sensing unit senses noise from first and second powers and outputs a power noise sensing signal. The voltage selecting unit outputs first and second driving signals in response to a voltage-supply-enable-signal and the power noise sensing signal. The first power voltage supply unit applies a voltage of the first power in response to the first and second driving signals. The second power voltage supply unit applies a voltage of the second power in response to the first and second driving signals.
摘要翻译： 电压供给装置包括电源噪声检测单元，电压选择单元，第一电源电压单元和第二电源电压单元。 功率噪声感测单元感测来自第一和第二功率的噪声，并输出功率噪声感测信号。 电压选择单元响应于电压供应使能信号和功率噪声感测信号输出第一和第二驱动信号。 第一电源电压单元响应于第一和第二驱动信号施加第一功率的电压。 第二电源电压单元响应于第一和第二驱动信号施加第二功率的电压。
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公开(公告)号：US07898270B2
公开(公告)日：2011-03-01
申请号：US12169524
申请日：2008-07-08
申请人： Yoon-Jae Shin , Jee-Yul Kim
发明人： Yoon-Jae Shin , Jee-Yul Kim
IPC分类号： G01R31/26
CPC分类号： G11C29/48 , G11C29/02 , G11C29/021 , G11C29/1201 , G11C2029/5004
摘要： An internal voltage test circuit of a semiconductor memory apparatus includes a comparing unit for comparing a level of internal voltage with a level of external voltage to output a comparison result as an output signal during a test mode, and an output selecting unit for outputting the output signal to a data output pad during the test mode, and outputting a data signal to the data output pad during a normal operation mode.
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6.发明授权Voltage control apparatus and method of controlling voltage using the same 有权电压控制装置及使用该电压控制装置的电压控制方法公开(公告)号：US07502268B2
公开(公告)日：2009-03-10
申请号：US11822358
申请日：2007-07-05
申请人： Jun-Gi Choi , Yoon-Jae Shin
发明人： Jun-Gi Choi , Yoon-Jae Shin
IPC分类号： G11C29/00
CPC分类号： G11C29/12 , G11C11/401 , G11C11/4074 , G11C2029/1202
摘要： A voltage control apparatus and a method of controlling a voltage using the same. A voltage control apparatus includes a signal generator configured to output a burn-in control signal and a burn-in precharge signal in response to an all bank precharge command, and a voltage controller configured to supply either a first voltage or a second voltage lower than the first voltage to a word line in response to the burn-in control signal and the burn-in precharge signal.
摘要翻译： 电压控制装置及使用该电压控制装置的电压的控制方法。 一种电压控制装置，包括：信号发生器，被配置为响应于全部分组预充电命令输出老化控制信号和老化预充电信号;以及电压控制器，被配置为将第一电压或第二电压 响应于老化控制信号和老化预充电信号到字线的第一电压。
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公开(公告)号：US20080080289A1
公开(公告)日：2008-04-03
申请号：US11822005
申请日：2007-06-29
申请人： Yoon-Jae Shin , Jun-Gi Choi
发明人： Yoon-Jae Shin , Jun-Gi Choi
IPC分类号： G11C5/14
CPC分类号： G11C5/14
摘要： An internal voltage generator of a semiconductor memory device controls generating an internal voltage according to an increase of the internal voltage during an active mode, to thereby decrease current consumption. The internal voltage generator of a semiconductor memory device includes a voltage sensor, a plurality of first control units, a plurality of second control units, and a plurality of voltage drivers. The voltage sensor detects an internal voltage. The plurality of first control units generate a plurality of internal control signals according to the voltage level of an output of the voltage sensor. The plurality of second control units generate a plurality of driver control signals in response to the plurality of internal control signals. The plurality of voltage drivers are turned on/off in response to the plurality of driver control signals.
摘要翻译： 半导体存储器件的内部电压发生器控制在活动模式期间根据内部电压的增加而产生内部电压，从而降低电流消耗。 半导体存储器件的内部电压发生器包括电压传感器，多个第一控制单元，多个第二控制单元和多个电压驱动器。 电压传感器检测内部电压。 多个第一控制单元根据电压传感器的输出的电压电平产生多个内部控制信号。 多个第二控制单元响应于多个内部控制信号产生多个驱动器控制信号。 响应于多个驱动器控制信号，多个电压驱动器被接通/断开。
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公开(公告)号：US20100165762A1
公开(公告)日：2010-07-01
申请号：US12724152
申请日：2010-03-15
申请人： Kyoung-Nam Kim , Yoon-Jae Shin
发明人： Kyoung-Nam Kim , Yoon-Jae Shin
摘要： A semiconductor memory device includes: a modulation controller for generating a modulation control signal for controlling a frequency modulation operation; a delay locked loop (DLL) circuit for performing a delay locking operation to generate first and second DLL clocks and outputting a frequency-modulated DLL clock in response to the modulation control signal; and a data strobe signal generator for outputting the frequency-modulated DLL clock as a data strobe signal.
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公开(公告)号：US20100165761A1
公开(公告)日：2010-07-01
申请号：US12724088
申请日：2010-03-15
申请人： Kyoung-Nam KIM , Yoon-Jae Shin
发明人： Kyoung-Nam KIM , Yoon-Jae Shin
IPC分类号： G11C7/00
摘要： A semiconductor memory device includes: a modulation controller for generating a modulation control signal for controlling a frequency modulation operation; a delay locked loop (DLL) circuit for performing a delay locking operation to generate first and second DLL clocks and outputting a frequency-modulated DLL clock in response to the modulation control signal; and a data strobe signal generator for outputting the frequency-modulated DLL clock as a data strobe signal.
摘要翻译： 半导体存储器件包括：调制控制器，用于产生用于控制频率调制操作的调制控制信号; 延迟锁定环（DLL）电路，用于执行延迟锁定操作以产生第一和第二DLL时钟并响应于调制控制信号输出调频DLL时钟; 以及数据选通信号发生器，用于输出调频DLL时钟作为数据选通信号。
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10.发明授权Semiconductor memory device having a delay locked loop (DLL) and method for driving the same 有权具有延迟锁定环（DLL）的半导体存储器件及其驱动方法公开(公告)号：US07710817B2
公开(公告)日：2010-05-04
申请号：US11819803
申请日：2007-06-29
申请人： Kyoung-Nam Kim , Yoon-Jae Shin
发明人： Kyoung-Nam Kim , Yoon-Jae Shin
IPC分类号： G11C8/00
摘要： A semiconductor memory device includes: a modulation controller for generating a modulation control signal for controlling a frequency modulation operation; a delay locked loop (DLL) circuit for performing a delay locking operation to generate first and second DLL clocks and outputting a frequency-modulated DLL clock in response to the modulation control signal; and a data strobe signal generator for outputting the frequency-modulated DLL clock as a data strobe signal.
摘要翻译： 半导体存储器件包括：调制控制器，用于产生用于控制频率调制操作的调制控制信号; 延迟锁定环（DLL）电路，用于执行延迟锁定操作以产生第一和第二DLL时钟并响应于调制控制信号输出调频DLL时钟; 以及数据选通信号发生器，用于输出调频DLL时钟作为数据选通信号。
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