公开(公告)号：US09923077B2

公开(公告)日：2018-03-20

申请号：US15093896

申请日：2016-04-08

申请人： Yoon-tae Hwang ,  Ki-joong Yoon ,  Moon-kyu Park ,  Sang-jin Hyun ,  Hoon-joo Na

发明人： Yoon-tae Hwang ,  Ki-joong Yoon ,  Moon-kyu Park ,  Sang-jin Hyun ,  Hoon-joo Na

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L29/40 ,  H01L29/423 ,  H01L29/51 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L29/513 ,  H01L21/28176 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/78

摘要： A method of curing a dielectric layer, such as a dielectric layer that has a relatively small thickness and/or a narrow width or a complicated shape, is provided. The method of curing a dielectric layer for the manufacture of a semiconductor device includes providing the dielectric layer, wherein the dielectric layer is on a semiconductor layer; forming a first metal-containing layer on the dielectric layer; forming a curing atom screening region in an upper portion of the first metal-containing layer by injecting screening atoms onto an upper surface of the first metal-containing layer; injecting curing atoms into the first metal-containing layer through the upper surface of the first metal-containing layer; and flowing the curing atoms into the dielectric layer in an atmosphere at a first temperature.

公开(公告)号：US20160307762A1

公开(公告)日：2016-10-20

申请号：US15093896

申请日：2016-04-08

申请人： Yoon-tae Hwang ,  Ki-joong Yoon ,  Moon-kyu Park ,  Sang-jin Hyun ,  Hoon-joo Na

发明人： Yoon-tae Hwang ,  Ki-joong Yoon ,  Moon-kyu Park ,  Sang-jin Hyun ,  Hoon-joo Na

IPC分类号： H01L21/28 ,  H01L29/40 ,  H01L29/423 ,  H01L21/02

CPC分类号： H01L29/513 ,  H01L21/28176 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/78

摘要： A method of curing a dielectric layer, such as a dielectric layer that has a relatively small thickness and/or a narrow width or a complicated shape, is provided. The method of curing a dielectric layer for the manufacture of a semiconductor device includes providing the dielectric layer, wherein the dielectric layer is on a semiconductor layer; forming a first metal-containing layer on the dielectric layer; forming a curing atom screening region in an upper portion of the first metal-containing layer by injecting screening atoms onto an upper surface of the first metal-containing layer; injecting curing atoms into the first metal-containing layer through the upper surface of the first metal-containing layer; and flowing the curing atoms into the dielectric layer in an atmosphere at a first temperature.

摘要翻译： 提供固化电介质层的方法，例如具有相对较小厚度和/或窄宽度或复杂形状的电介质层。 固化用于制造半导体器件的电介质层的方法包括提供介电层，其中介电层在半导体层上; 在介电层上形成第一含金属层; 通过将筛选原子注入第一含金属层的上表面，在第一含金属层的上部形成固化原子筛选区; 通过第一含金属层的上表面将固化原子注入第一含金属层; 并在第一温度的气氛中将固化原子流入电介质层。

公开(公告)号：US09793368B2

公开(公告)日：2017-10-17

申请号：US15048797

申请日：2016-02-19

申请人： Hyeok-jun Son ,  Wan-don Kim ,  Hoon-joo Na ,  Sang-jin Hyun ,  Yoon-tae Hwang ,  Jae-yeol Song

发明人： Hyeok-jun Son ,  Wan-don Kim ,  Hoon-joo Na ,  Sang-jin Hyun ,  Yoon-tae Hwang ,  Jae-yeol Song

IPC分类号： H01L29/49 ,  H01L29/78 ,  H01L29/51

CPC分类号： H01L29/4958 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7851

摘要： Semiconductor devices are provided. A semiconductor device includes an insulating layer. The semiconductor device includes a rare earth element supply layer on the insulating layer. Moreover, the semiconductor device includes a metal layer that is on the rare earth element supply layer. The rare earth element supply layer is between the insulating layer and the metal layer. Methods of forming semiconductor devices are also provided.

公开(公告)号：US20160315164A1

公开(公告)日：2016-10-27

申请号：US15048797

申请日：2016-02-19

申请人： Hyeok-jun Son ,  Wan-don Kim ,  Hoon-joo Na ,  Sang-jin Hyun ,  Yoon-tae Hwang ,  Jae-yeol Song

发明人： Hyeok-jun Son ,  Wan-don Kim ,  Hoon-joo Na ,  Sang-jin Hyun ,  Yoon-tae Hwang ,  Jae-yeol Song

IPC分类号： H01L29/49 ,  H01L29/423 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L29/4958 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7851

摘要： Semiconductor devices are provided. A semiconductor device includes an insulating layer. The semiconductor device includes a rare earth element supply layer on the insulating layer. Moreover, the semiconductor device includes a metal layer that is on the rare earth element supply layer. The rare earth element supply layer is between the insulating layer and the metal layer. Methods of forming semiconductor devices are also provided.

摘要翻译： 提供半导体器件。 半导体器件包括绝缘层。 半导体器件包括在绝缘层上的稀土元素供给层。 此外，半导体器件包括在稀土元素供给层上的金属层。 稀土元素供给层位于绝缘层与金属层之间。 还提供了形成半导体器件的方法。