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公开(公告)号：US07924355B2
公开(公告)日：2011-04-12
申请号：US12153508
申请日：2008-05-20
IPC分类号： G02F1/1343 , G02F1/1335 , G02F1/13 , H01L33/08
CPC分类号： G02F1/134363 , G02F1/13439 , G02F1/136213
摘要： Three layers are formed on a TFT substrate SUB 100. The three layers include a first transparent electrode PSL1 131, a second transparent electrode CSL 127 and a third transparent electrode PSL2 132, all of which are laminated in parallel to the substrate surface. Two auxiliary capacitances to a liquid crystal capacitance are formed between the first transparent electrode PSL1 131 and the second transparent electrode CSL 127 and between the second transparent electrode CSL 127 and the third transparent electrode PSL2 132.
摘要翻译： 三层形成在TFT基板SUB100上。三层包括第一透明电极PSL1 131，第二透明电极CSL 127和第三透明电极PSL2 132，它们均与基板表面平行地层叠。 在第一透明电极PSL1 131和第二透明电极CSL 127之间以及第二透明电极CSL 127和第三透明电极PSL2 132之间形成液晶电容的两个辅助电容。
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公开(公告)号：US20080316385A1
公开(公告)日：2008-12-25
申请号：US12153508
申请日：2008-05-20
IPC分类号： G02F1/1343 , G02F1/133
CPC分类号： G02F1/134363 , G02F1/13439 , G02F1/136213
摘要： Three layers are formed on a TFT substrate SUB 100. The three layers include a first transparent electrode PSL1 131, a second transparent electrode CSL 127 and a third transparent electrode PSL2 132, all of which are laminated in parallel to the substrate surface. Two auxiliary capacitances to a liquid crystal capacitance are formed between the first transparent electrode PSL1 131 and the second transparent electrode CSL 127 and between the second transparent electrode CSL 127 and the third transparent electrode PSL2 132.
摘要翻译： 三层形成在TFT基板SUB100上。三层包括第一透明电极PSL1 131，第二透明电极CSL 127和第三透明电极PSL2 132，它们均与基板表面平行地层叠。 在第一透明电极PSL1 131和第二透明电极CSL 127之间以及第二透明电极CSL 127和第三透明电极PSL2 132之间形成液晶电容的两个辅助电容。
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公开(公告)号：US20070252145A1
公开(公告)日：2007-11-01
申请号：US11741272
申请日：2007-04-27
申请人： Yoshiaki Toyota , Takeshi Sato , Mieko Matsumura
发明人： Yoshiaki Toyota , Takeshi Sato , Mieko Matsumura
IPC分类号： H01L29/04
CPC分类号： H01L27/1288 , H01L27/124 , H01L27/1255 , H01L27/326 , H01L27/3276 , H01L29/4908 , H01L2227/323
摘要： An image display device of reduced cost is provided. A plurality of gate lines, a plurality of signal lines formed to cross the gate lines in a matrix fashion, and a plurality of thin-film transistors are formed on an insulating substrate, and the plurality of gate lines are laminated electrodes. The plurality of thin-film transistors are configured of transistors of two types of an n-channel conductivity type and a p-channel conductivity type. Gate electrodes of thin-film transistors of one type are laminated electrodes of the same configuration as the gate lines, and gate electrodes of thin-film transistors of the other type are configured of electrodes of the same layer as bottom electrodes of the gate lines.
摘要翻译： 提供了一种降低成本的图像显示装置。 多个栅极线，以矩阵方式与栅极线交叉的多个信号线和多个薄膜晶体管形成在绝缘基板上，并且多个栅极线是叠层电极。 多个薄膜晶体管由n沟道导电型和p沟道导电型两种晶体管构成。 一种类型的薄膜晶体管的栅电极是与栅极线相同结构的层叠电极，另一种类型的薄膜晶体管的栅电极由与栅极线的底电极相同的层的电极构成。
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公开(公告)号：US08482003B2
公开(公告)日：2013-07-09
申请号：US11874955
申请日：2007-10-19
申请人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
发明人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
IPC分类号： H01L31/00
CPC分类号： H01L29/4908 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L29/41733 , H01L51/56
摘要： An image display unit is provided for which it is possible to reduce the number of ion plantation and photolithographic processes required to manufacture the device. A gate electrode GT is a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT. A top electrode of a storage capacitor Cst is formed of the bottom layer metal film GMB and ion implantation for the top electrode is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of a PMOSTFT of the device is also formed with the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist.
摘要翻译： 提供了一种图像显示单元，可以减少制造装置所需的离子种植和光刻工艺的数量。 栅电极GT是薄底层金属膜GMB和顶层金属膜GMT的层叠结构。 存储电容器Cst的顶部电极由底层金属膜GMB形成，并且与源极 - 漏极电极的离子注入同时进行用于顶部电极的离子注入。 器件的PMOSTFT的栅极也由底层金属GMB形成，并且通过使用相同的抗蚀剂来执行用于阈值调整的离子注入。
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公开(公告)号：US07550772B2
公开(公告)日：2009-06-23
申请号：US11741272
申请日：2007-04-27
申请人： Yoshiaki Toyota , Takeshi Sato , Mieko Matsumura
发明人： Yoshiaki Toyota , Takeshi Sato , Mieko Matsumura
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/1288 , H01L27/124 , H01L27/1255 , H01L27/326 , H01L27/3276 , H01L29/4908 , H01L2227/323
摘要： An image display device of reduced cost is provided. A plurality of gate lines, a plurality of signal lines formed to cross the gate lines in a matrix fashion, and a plurality of thin-film transistors are formed on an insulating substrate, and the plurality of gate lines are laminated electrodes. The plurality of thin-film transistors are configured of transistors of two types of an n-channel conductivity type and a p-channel conductivity type. Gate electrodes of thin-film transistors of one type are laminated electrodes of the same configuration as the gate lines, and gate electrodes of thin-film transistors of the other type are configured of electrodes of the same layer as bottom electrodes of the gate lines.
摘要翻译： 提供了一种降低成本的图像显示装置。 多个栅极线，以矩阵方式与栅极线交叉的多个信号线和多个薄膜晶体管形成在绝缘基板上，并且多个栅极线是叠层电极。 多个薄膜晶体管由n沟道导电型和p沟道导电型两种晶体管构成。 一种类型的薄膜晶体管的栅电极是与栅极线相同结构的层叠电极，另一种类型的薄膜晶体管的栅电极由与栅极线的底电极相同的层的电极构成。
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公开(公告)号：US20080093602A1
公开(公告)日：2008-04-24
申请号：US11874955
申请日：2007-10-19
申请人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
发明人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
IPC分类号： H01L33/00
CPC分类号： H01L29/4908 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L29/41733 , H01L51/56
摘要： The present invention provides an image display unit, which can be manufactured in shorter time by designing a thin-film transistor, by which it is possible to reduce the number of processes of ion implantation and photolithographic processes. A gate electrode GT is designed in a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT, and a top electrode of a storage capacitor Cst is designed to have only the bottom layer metal film GMB. Ion implanter for the bottom electrode of the storage capacitor Cst is passed through the thin bottom layer metal film GMB, and ion implantation is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of PMOSTFT has also only the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist. By designing the thin-film transistor and the storage capacitor in such structure, one process each can be reduced in the photolithographic process and in the ion implantation process, and an active matrix substrate for an image display unit can be manufactured in shorter time and at lower cost.
摘要翻译： 本发明提供了一种图像显示单元，其可以通过设计薄膜晶体管在较短时间内制造，由此可以减少离子注入和光刻工艺的处理次数。 栅电极GT被设计成薄底层金属膜GMB和顶层金属膜GMT的层叠结构，并且存储电容器Cst的顶电极被设计为仅具有底层金属膜GMB。 用于存储电容器Cst的底部电极的离子注入机通过薄的底层金属膜GMB，并且在与源极 - 漏极电极的离子注入同时进行离子注入。 PMOSTFT的栅极也仅具有底层金属GMB，并且通过使用相同的抗蚀剂来执行用于阈值调整的离子注入。 通过在这种结构中设计薄膜晶体管和存储电容器，可以在光刻工艺和离子注入工艺中减少一个工艺，并且可以在更短的时间和更短的时间内制造用于图像显示单元的有源矩阵基板 降低成本。
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公开(公告)号：US20090040411A1
公开(公告)日：2009-02-12
申请号：US12216581
申请日：2008-07-08
IPC分类号： G02F1/1368
CPC分类号： G02F1/1368 , G02F1/136209 , G02F1/136227 , G02F2001/13613
摘要： A liquid crystal display, having an improved application of electric field to the molecules of liquid crystal, includes a substrate and a pixel array bonded to the surface of this substrate, and the pixel array includes at least a thin-film transistor and a pixel electrode connected with this thin-film transistor, and the pixel electrode is formed in a layer higher than the thin-film transistor in relation to the substrate.
摘要翻译： 具有改善对液晶分子的电场应用的液晶显示器包括基板和与该基板的表面接合的像素阵列，像素阵列至少包括薄膜晶体管和像素电极 与该薄膜晶体管连接，并且像素电极相对于衬底形成在比薄膜晶体管高的层中。
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公开(公告)号：US08139173B2
公开(公告)日：2012-03-20
申请号：US12216581
申请日：2008-07-08
IPC分类号： G02F1/133 , G02F1/1343
CPC分类号： G02F1/1368 , G02F1/136209 , G02F1/136227 , G02F2001/13613
摘要： A liquid crystal display, having an improved application of electric field to the molecules of liquid crystal, includes a substrate and a pixel array bonded to the surface of this substrate, and the pixel array includes at least a thin-film transistor and a pixel electrode connected with this thin-film transistor, and the pixel electrode is formed in a layer higher than the thin-film transistor in relation to the substrate.
摘要翻译： 具有改善对液晶分子的电场应用的液晶显示器包括基板和与该基板的表面接合的像素阵列，像素阵列至少包括薄膜晶体管和像素电极 与该薄膜晶体管连接，并且像素电极相对于衬底形成在比薄膜晶体管高的层中。
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公开(公告)号：US20080169469A1
公开(公告)日：2008-07-17
申请号：US12003462
申请日：2007-12-26
IPC分类号： H01L29/04
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
摘要翻译： 提供了一种用于提高像素的开口率的显示装置。 在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极， 透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分 像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。
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公开(公告)号：US20080119018A1
公开(公告)日：2008-05-22
申请号：US11979515
申请日：2007-11-05
申请人： Yoshiaki Toyota , Takeshi Sato , Hajime Akimoto
发明人： Yoshiaki Toyota , Takeshi Sato , Hajime Akimoto
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L27/124 , H01L27/1255 , H01L29/4908
摘要： The present invention provides an image display unit and a method for manufacturing the same, in which the number of photolithographic processes can be reduced in the manufacture of an active substrate, and the manufacturing cost can be decreased. In a bottom gate type TFT substrate, a transparent conductive film 16 in the same layer as a pixel electrode 3 is used as a bottom layer, said pixel electrode 3 having said gate electrode 4 on main surface of an insulating substrate 1, and a laminated electrode film with a metal film 26 superimposed on a top layer thereof, and said pixel electrode 3 is used as the transparent conductive film 16.
摘要翻译： 本发明提供一种图像显示单元及其制造方法，其中在有源基板的制造中可以减少光刻工艺的数量，并且可以降低制造成本。 在底栅型TFT基板中，与像素电极3同层的透明导电膜16用作底层，所述像素电极3在绝缘基板1的主表面上具有所述栅电极4，层叠 电极膜，其上叠置有金属膜26，并且所述像素电极3用作透明导电膜16。
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