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公开(公告)号：US20120318337A1
公开(公告)日：2012-12-20
申请号：US13521487
申请日：2012-02-17
IPC分类号： H01L31/076
CPC分类号： H01L31/075 , H01L31/022441 , H01L31/0504 , H01L31/0508 , H01L31/0512 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： In a conventional solar cell, it has been difficult to ensure a sufficient light absorption and simultaneously to prevent current loss due to the reduction of the moving distance of electrons and holes. As a means for solving this difficulty, a plurality of a p-i-n junctions are stacked through an insulating film and are connected in parallel with each other using through-electrodes. In this case, the through-electrodes and the p-i-n junctions are connected through the p-layer or the n-layer, thereby moving electrons and holes in opposite directions and generating output current. In addition, the i-layer is made thicker than the p-layer and the n-layer in each of the p-i-n junctions, thereby ensuring a sufficient light absorption and simultaneously preventing current loss.
摘要翻译： 在常规太阳能电池中，难以确保足够的光吸收并且同时防止由于电子和空穴的移动距离的减小导致的电流损耗。 作为解决这个困难的手段，通过绝缘膜层叠多个p-i-n结，并且使用贯通电极彼此并联连接。 在这种情况下，贯通电极和p-i-n结通过p层或n层连接，从而沿相反方向移动电子和空穴并产生输出电流。 此外，i层比p-i-n结中的每一个中的p层和n层厚，从而确保足够的光吸收并同时防止电流损耗。
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公开(公告)号：US08093585B2
公开(公告)日：2012-01-10
申请号：US12275414
申请日：2008-11-21
CPC分类号： H01L27/3262 , H01L27/3276 , H01L2227/323
摘要： Each TFT for driving each of a plurality of pixels arranged in a matrix-like configuration is configured using a stagger-type polycrystalline-Si TFT. A gate electrode, which is composed of a high-heat-resistant material capable of resisting high temperature at the time of polycrystalline-Si film formation, is disposed at a lower layer as compared with the polycrystalline-Si layer that forms a channel of each TFT. A gate line, which is composed of a low-resistance material, is disposed at an upper layer as compared with the polycrystalline-Si layer. The gate electrode and the gate line are connected to each other via a through-hole bored in a gate insulation film. Respective configuration components of each organic electro-luminescent element are partially co-used at the time of the line formation, thereby suppressing an increase in the steps, processes, and configuration components.
摘要翻译： 用于驱动以矩阵状配置排列的多个像素中的每一个的每个TFT使用交错型多晶硅TFT来构成。 与形成多晶硅膜形成时的耐高温材料的高电阻材料相比，形成沟道的多晶Si层的栅电极配置在下层 TFT。 与多晶硅层相比，由低电阻材料构成的栅极线设置在上层。 栅电极和栅极线通过在栅极绝缘膜中钻孔的通孔彼此连接。 每个有机电致发光元件的各个配置组件在线形成时被部分地共同使用，从而抑制了步骤，处理和配置组件的增加。
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公开(公告)号：US07924355B2
公开(公告)日：2011-04-12
申请号：US12153508
申请日：2008-05-20
IPC分类号： G02F1/1343 , G02F1/1335 , G02F1/13 , H01L33/08
CPC分类号： G02F1/134363 , G02F1/13439 , G02F1/136213
摘要： Three layers are formed on a TFT substrate SUB 100. The three layers include a first transparent electrode PSL1 131, a second transparent electrode CSL 127 and a third transparent electrode PSL2 132, all of which are laminated in parallel to the substrate surface. Two auxiliary capacitances to a liquid crystal capacitance are formed between the first transparent electrode PSL1 131 and the second transparent electrode CSL 127 and between the second transparent electrode CSL 127 and the third transparent electrode PSL2 132.
摘要翻译： 三层形成在TFT基板SUB100上。三层包括第一透明电极PSL1 131，第二透明电极CSL 127和第三透明电极PSL2 132，它们均与基板表面平行地层叠。 在第一透明电极PSL1 131和第二透明电极CSL 127之间以及第二透明电极CSL 127和第三透明电极PSL2 132之间形成液晶电容的两个辅助电容。
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公开(公告)号：US20100200858A1
公开(公告)日：2010-08-12
申请号：US12702900
申请日：2010-02-09
CPC分类号： H01L27/1214 , H01L29/04 , H01L29/42384 , H01L29/78618
摘要： A display device includes a plurality of thin-film transistors formed on a substrate on which a display area is formed. At least one of the plurality of thin-film transistors includes a gate electrode, agate insulating film formed to cover the gate electrode, an interlayer insulating film formed on an upper surface of the gate insulating film and having an opening formed in an area where the gate electrode is formed in plan view, a pair of heavily-doped semiconductor films arranged on an upper surface of the interlayer insulating film with the opening interposed therebetween, a polycrystalline semiconductor film formed across the opening and formed in the area, the polycrystalline semiconductor film being electrically connected to the pair of heavily-doped semiconductor films, and a pair of electrodes formed to overlap the pair of heavily-doped semiconductor films, respectively, without overlapping the polycrystalline semiconductor film.
摘要翻译： 显示装置包括形成在其上形成有显示区域的基板上的多个薄膜晶体管。 多个薄膜晶体管中的至少一个包括形成为覆盖栅电极的栅电极，玛瑙绝缘膜，形成在栅极绝缘膜的上表面上的层间绝缘膜，并且具有形成在 在平面图中形成栅极电极，一对重掺杂半导体膜布置在层间绝缘膜的上表面上，其间插入有开口，多个半导体膜形成在该开口两边形成在该区域中，多晶半导体膜 电连接到一对重掺杂半导体膜，以及一对电极，分别与一对重掺杂半导体膜重叠，而不与多晶半导体膜重叠。
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公开(公告)号：US20090040411A1
公开(公告)日：2009-02-12
申请号：US12216581
申请日：2008-07-08
IPC分类号： G02F1/1368
CPC分类号： G02F1/1368 , G02F1/136209 , G02F1/136227 , G02F2001/13613
摘要： A liquid crystal display, having an improved application of electric field to the molecules of liquid crystal, includes a substrate and a pixel array bonded to the surface of this substrate, and the pixel array includes at least a thin-film transistor and a pixel electrode connected with this thin-film transistor, and the pixel electrode is formed in a layer higher than the thin-film transistor in relation to the substrate.
摘要翻译： 具有改善对液晶分子的电场应用的液晶显示器包括基板和与该基板的表面接合的像素阵列，像素阵列至少包括薄膜晶体管和像素电极 与该薄膜晶体管连接，并且像素电极相对于衬底形成在比薄膜晶体管高的层中。
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公开(公告)号：US20080316385A1
公开(公告)日：2008-12-25
申请号：US12153508
申请日：2008-05-20
IPC分类号： G02F1/1343 , G02F1/133
CPC分类号： G02F1/134363 , G02F1/13439 , G02F1/136213
摘要： Three layers are formed on a TFT substrate SUB 100. The three layers include a first transparent electrode PSL1 131, a second transparent electrode CSL 127 and a third transparent electrode PSL2 132, all of which are laminated in parallel to the substrate surface. Two auxiliary capacitances to a liquid crystal capacitance are formed between the first transparent electrode PSL1 131 and the second transparent electrode CSL 127 and between the second transparent electrode CSL 127 and the third transparent electrode PSL2 132.
摘要翻译： 三层形成在TFT基板SUB100上。三层包括第一透明电极PSL1 131，第二透明电极CSL 127和第三透明电极PSL2 132，它们均与基板表面平行地层叠。 在第一透明电极PSL1 131和第二透明电极CSL 127之间以及第二透明电极CSL 127和第三透明电极PSL2 132之间形成液晶电容的两个辅助电容。
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公开(公告)号：US20080012023A1
公开(公告)日：2008-01-17
申请号：US11761930
申请日：2007-06-12
IPC分类号： H01L29/06 , H01L29/786
CPC分类号： H01L29/78612 , H01L27/12 , H01L29/42384
摘要： In either of a source side and a drain side of an insular semiconductor thin film, a gate electrode is extended without a break along the contour of the insular semiconductor thin film to provide a branch closed circuit, thereby removing a current component path to server as a sub-channel in the edge of the insular semiconductor thin film, in order to eliminate current components due to the concentration of a gate electric field in silicon thin-film edges occurring in edges of an insular semiconductor thin film of top gate type thin-film transistors and a shift of threshold due to fixed charges in the periphery of the silicon thin-file edges.
摘要翻译： 在岛状半导体薄膜的源极侧和漏极侧的任意一个中，栅电极沿着半导体薄膜的轮廓延伸而不发生断裂，从而提供分支闭合电路，从而将作为电流分量路径的电流消除为服务器，作为 在岛状半导体薄膜的边缘的子通道中，为了消除由顶栅型薄膜的半导体薄膜的边缘出现的硅薄膜边缘中的栅极电场的集中而导致的电流成分， 薄膜晶体管和由于硅薄文件边缘的外围的固定电荷引起的阈值偏移。
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公开(公告)号：US20070252145A1
公开(公告)日：2007-11-01
申请号：US11741272
申请日：2007-04-27
申请人： Yoshiaki Toyota , Takeshi Sato , Mieko Matsumura
发明人： Yoshiaki Toyota , Takeshi Sato , Mieko Matsumura
IPC分类号： H01L29/04
CPC分类号： H01L27/1288 , H01L27/124 , H01L27/1255 , H01L27/326 , H01L27/3276 , H01L29/4908 , H01L2227/323
摘要： An image display device of reduced cost is provided. A plurality of gate lines, a plurality of signal lines formed to cross the gate lines in a matrix fashion, and a plurality of thin-film transistors are formed on an insulating substrate, and the plurality of gate lines are laminated electrodes. The plurality of thin-film transistors are configured of transistors of two types of an n-channel conductivity type and a p-channel conductivity type. Gate electrodes of thin-film transistors of one type are laminated electrodes of the same configuration as the gate lines, and gate electrodes of thin-film transistors of the other type are configured of electrodes of the same layer as bottom electrodes of the gate lines.
摘要翻译： 提供了一种降低成本的图像显示装置。 多个栅极线，以矩阵方式与栅极线交叉的多个信号线和多个薄膜晶体管形成在绝缘基板上，并且多个栅极线是叠层电极。 多个薄膜晶体管由n沟道导电型和p沟道导电型两种晶体管构成。 一种类型的薄膜晶体管的栅电极是与栅极线相同结构的层叠电极，另一种类型的薄膜晶体管的栅电极由与栅极线的底电极相同的层的电极构成。
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公开(公告)号：US09257583B2
公开(公告)日：2016-02-09
申请号：US14119195
申请日：2011-05-25
IPC分类号： H01L31/00 , H01L31/0352 , H01L31/0236
CPC分类号： H01L31/035281 , H01L31/02366 , H01L31/03529 , Y02E10/50
摘要： A solar cell including a substrate 1, a nanopillar 11 having diameter D1 connected to the substrate 1, and a nanopillar 12 having diameter D2 connected to the substrate 1 is characterized in that D2 is greater than D1 in order to realize a solar cell having, as the surface structure, a nanopillar array structure with which it is possible to prevent reflection within the broad wavelength region of solar light. A nanopillar array structure 21 formed from two types of nanopillars having different diameters has a point of minimum reflectivity of a nanopillar array structure formed from the nanopillar 11 having diameter D1 and a point of minimum reflectivity of a nanopillar array structure formed from the nanopillar 12 having diameter D2 and therefore, is capable of preventing reflection within the broad wavelength region of solar light.
摘要翻译： 包括基板1，具有与基板1连接的直径D1的纳米柱11和具有连接到基板1的直径D2的纳米柱12的太阳能电池的特征在于，D2大于D1，以实现太阳能电池， 作为表面结构，可以防止在太阳光的宽波长范围内的反射的纳米柱阵列结构。 由具有不同直径的两种类型的纳米柱形成的纳米柱阵列结构21具有由具有直径D1的纳米柱11形成的纳米柱阵列结构的最小反射率点和由纳米柱12形成的纳米柱阵列结构的最小反射率点， 因此，能够防止太阳光的宽波长范围内的反射。
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公开(公告)号：US08482003B2
公开(公告)日：2013-07-09
申请号：US11874955
申请日：2007-10-19
申请人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
发明人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
IPC分类号： H01L31/00
CPC分类号： H01L29/4908 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L29/41733 , H01L51/56
摘要： An image display unit is provided for which it is possible to reduce the number of ion plantation and photolithographic processes required to manufacture the device. A gate electrode GT is a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT. A top electrode of a storage capacitor Cst is formed of the bottom layer metal film GMB and ion implantation for the top electrode is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of a PMOSTFT of the device is also formed with the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist.
摘要翻译： 提供了一种图像显示单元，可以减少制造装置所需的离子种植和光刻工艺的数量。 栅电极GT是薄底层金属膜GMB和顶层金属膜GMT的层叠结构。 存储电容器Cst的顶部电极由底层金属膜GMB形成，并且与源极 - 漏极电极的离子注入同时进行用于顶部电极的离子注入。 器件的PMOSTFT的栅极也由底层金属GMB形成，并且通过使用相同的抗蚀剂来执行用于阈值调整的离子注入。
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