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14 条记录 (耗时 0.021 秒)

    Positive type radiation-sensitive resin composition
    2.
    发明授权
    Positive type radiation-sensitive resin composition 失效
    阳离子型辐射敏感性树脂组合物

    公开(公告)号：US5087548A

    公开(公告)日：1992-02-11

    申请号：US282958

    申请日：1988-12-05

    申请人： Yoshihiro Hosaka ,  Ikuo Nozue ,  Masashige Takatori ,  Yoshiyuki Harita ,  Kiyoshi Honda

    发明人： Yoshihiro Hosaka ,  Ikuo Nozue ,  Masashige Takatori ,  Yoshiyuki Harita ,  Kiyoshi Honda

    IPC分类号： G03F7/023

    CPC分类号： G03F7/0236

    摘要： A positive type radiation-sensitive resin composition which comprises a 1,2-quinonediazide compound and an alkali-soluble novolac resin produced by poly-condensing phenols represented by the formulas (I) and (II) in a molar ratio of (I)/(II) of 1/99 to 100/0 with a carbonyl compound: ##STR1## wherein R.sup.1 and R.sup.2, which may be the same or different, represent hydroxyl groups, hydrogen atoms, alkyl groups, aryl groups, aralkyl groups, alkenyl groups, halogen atoms, alkoxy groups, alkoxycarbonyl groups, aroxycarbonyl groups, alkanoyloxy groups, aroyloxy groups, acyl groups, cyano groups or nitro groups, ##STR2## wherein R.sup.3, R.sup.4 and R.sup.5, which may be the same or different, represent hydrogen atoms, alkyl groups, aryl groups, aralkyl groups, alkenyl groups, halogen atoms, alkoxy groups, alkoxycarbonyl groups, aroxycarbonyl groups, alkanoyloxy groups, aroyloxy groups, acyl groups, cyano groups or nitro groups. The above positive type radiation-sensitive resin composition is excellent in dry-etching resistance, resolution and heat resistance, and appropriate as a positive type resist for producing integrated circuits in which a resist pattern is formed, and also as a positive type resist for producing a mask.

    摘要翻译： 一种阳离子型辐射敏感性树脂组合物，其包含1,2-醌二叠氮化合物和由式（I）和（II）表示的聚缩醛的酚缩合树脂，摩尔比为（I）/ （II），其中羰基化合物：其中R 1和R 2可以相同或不同，表示羟基，氢原子，烷基，芳基，芳烷基 ，烯基，卤素原子，烷氧基，烷氧基羰基，芳氧基羰基，烷酰氧基，芳氧基，酰基，氰基或硝基，其中R3，R4和R5可以相同， 不同的，表示氢原子，烷基，芳基，芳烷基，烯基，卤素原子，烷氧基，烷氧基羰基，芳氧基羰基，烷酰氧基，芳氧基，酰基，氰基或硝基。 上述正型辐射敏感性树脂组合物的耐干蚀刻性，分辨率和耐热性优异，并且适合作为用于制造其中形成抗蚀剂图案的集成电路的正型抗蚀剂，并且作为用于生产抗蚀剂图案的正型抗蚀剂 一个面具

    Radiation-sensitive resin composition
    5.
    发明授权
    Radiation-sensitive resin composition 失效
    辐射敏感树脂组合物

    公开(公告)号：US06270939B1

    公开(公告)日：2001-08-07

    申请号：US09638955

    申请日：2000-08-16

    申请人： Yoshihiro Hosaka ,  Ikuo Nozue ,  Masashige Takatori ,  Yoshiyuki Harita

    发明人： Yoshihiro Hosaka ,  Ikuo Nozue ,  Masashige Takatori ,  Yoshiyuki Harita

    IPC分类号： G03F7023

    CPC分类号： G03F7/0226 ,  G03F7/0048 ,  G03F7/0085

    摘要： A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymonocarboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.

    摘要翻译： 一种辐射敏感性树脂组合物，其包含碱溶性树脂和辐射敏感性化合物在包含单一单羧酸酯的溶剂中的溶液。 该组合物具有高的储存稳定性（即，在储存期间形成非常少量的微粒），并且适合用作制造集成电路的抗蚀剂。

    Radiation-sensitive resin composition
    7.
    发明授权
    Radiation-sensitive resin composition 失效
    辐射敏感树脂组合物

    公开(公告)号：US06228554B1

    公开(公告)日：2001-05-08

    申请号：US09414724

    申请日：1999-10-08

    申请人： Yoshihiro Hosaka ,  Ikuo Nozue ,  Masashige Takatori ,  Yoshiyuki Harita

    发明人： Yoshihiro Hosaka ,  Ikuo Nozue ,  Masashige Takatori ,  Yoshiyuki Harita

    IPC分类号： G03F7023

    CPC分类号： G03F7/0226 ,  G03F7/0048 ,  G03F7/0085

    摘要： A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymono-carboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.

    摘要翻译： 一种辐射敏感性树脂组合物，其包含碱溶性树脂和辐射敏感性化合物在包含单一单羧酸酯的溶剂中的溶液。 该组合物具有高的储存稳定性（即，在储存期间形成非常少量的微粒），并且适合用作制造集成电路的抗蚀剂。

    Laddery lower alkylpolysilsesquioxane having heat-resistant thin film-formability and process for preparing same
    10.
    发明授权
    Laddery lower alkylpolysilsesquioxane having heat-resistant thin film-formability and process for preparing same 失效
    具有耐热薄膜成形性的梯形低级烷基聚硅倍半氧烷及其制备方法

    公开(公告)号：US4399266A

    公开(公告)日：1983-08-16

    申请号：US353811

    申请日：1982-03-02

    申请人： Yoshio Matsumura ,  Ikuo Nozue ,  Osahiko Tomomitsu ,  Takashi Ukachi ,  Taro Suminoe

    发明人： Yoshio Matsumura ,  Ikuo Nozue ,  Osahiko Tomomitsu ,  Takashi Ukachi ,  Taro Suminoe

    IPC分类号： C08G77/04 ,  C08G77/06 ,  C08G77/32 ,  C08G77/00

    CPC分类号： C08G77/04 ,  C08G77/06 ,  C08G77/32

    摘要： A laddery lower alkylpolysilsesquioxane represented by the formula: ##STR1## wherein R and R' represent same or different lower alkyl groups, and n represents an average degree of polymerization, said laddery lower alkylpolysilsesquioxane having a heat-resistant thin film-formability, characterized in that 15 to 30% by weight of the lower alkylpolysilsesquioxane is occupied by the portion having a standard polystyrene-reduced molecular weight of 20,000 or less as measured by gel permeation chromatography. Said silicone resin in which R and R' are methyl is prepared by dissolving CH.sub.3 SiCl.sub.3 in a ketone or an ether, adding water to this solution with stirring to hydrolyze CH.sub.3 SiCl.sub.3, condensing the hydrolyzate and, if necessary, subjecting the resulting condensate to a treatment for adjusting the proportion of the low molecular weight portion in the product.

    摘要翻译： 由下式表示的梯状低级烷基聚硅倍半氧烷：其中R和R'表示相同或不同的低级烷基，n表示平均聚合度，所述梯状低级烷基聚硅倍半氧烷具有耐热薄膜可成形性，其特征在于 通过凝胶渗透色谱法测定，低分子量聚硅氧烷的15〜30重量％被标准聚苯乙烯缩小分子量为20,000以下的部分占据。 其中R和R'为甲基的所述有机硅树脂通过将CH 3 SiCl 3溶解在酮或醚中制备，在搅拌下向该溶液中加入水以水解CH 3 SiCl 3，冷凝水解产物，如果需要，将所得缩合物进行处理 调节产品中低分子量部分的比例。