摘要:
A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymonocarboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.
摘要:
A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymonocarboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.
摘要:
A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymonocarboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.
摘要:
A positive type radiation-sensitive resin composition which comprises a 1,2-quinonediazide compound and an alkali-soluble novolac resin produced by poly-condensing phenols represented by the formulas (I) and (II) in a molar ratio of (I)/(II) of 1/99 to 100/0 with a carbonyl compound: ##STR1## wherein R.sup.1 and R.sup.2, which may be the same or different, represent hydroxyl groups, hydrogen atoms, alkyl groups, aryl groups, aralkyl groups, alkenyl groups, halogen atoms, alkoxy groups, alkoxycarbonyl groups, aroxycarbonyl groups, alkanoyloxy groups, aroyloxy groups, acyl groups, cyano groups or nitro groups, ##STR2## wherein R.sup.3, R.sup.4 and R.sup.5, which may be the same or different, represent hydrogen atoms, alkyl groups, aryl groups, aralkyl groups, alkenyl groups, halogen atoms, alkoxy groups, alkoxycarbonyl groups, aroxycarbonyl groups, alkanoyloxy groups, aroyloxy groups, acyl groups, cyano groups or nitro groups. The above positive type radiation-sensitive resin composition is excellent in dry-etching resistance, resolution and heat resistance, and appropriate as a positive type resist for producing integrated circuits in which a resist pattern is formed, and also as a positive type resist for producing a mask.
摘要:
A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymonocarboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.
摘要:
A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymono-carboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.
摘要:
A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymono-carboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.
摘要:
A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monoxymono-carboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.
摘要:
A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymonocarboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.
摘要:
An ionizing radiation sensitive resist consisting essentially of a polymer having a recurring unit represented by the following formula: ##STR1## wherein X is a hydrogen atom, a methyl group, or a halogen atom and R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5, which may be identical or different, are hydrogen atoms, halogen atoms, alkyl groups having 1 to 3 carbon atoms, alkoxy groups having 1 to 3 carbon atoms, haloalkyl groups having 1 to 3 carbon atoms or haloalkoxy groups having 1 to 3 carbon atoms, at least a part of the X groups present in said polymer being a halogen atom, at least a part of the Y.sup.1 and Y.sup.2 group present in said polymer being a halogen atom, and at least a part of the R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 groups present in said polymer being a haloalkyl or haloalkoxy group having 1 to 3 carbon atoms. Said ionizing radiation sensitive resist is suitable as a negative type resist. This resist is used in the form of an organic solvent solution to form a coating film on a substrate and the desired parts of this coating film are irradiated with an ionizing radiation, whereby patterns are formed.