公开(公告)号：US20100009532A1

公开(公告)日：2010-01-14

申请号：US12436158

申请日：2009-05-06

申请人： Yoshihiro KAINUMA ,  Tatsuhiko MIURA ,  Takashi SATO ,  Katsuhiro MITSUI ,  Daisuke ONO

发明人： Yoshihiro KAINUMA ,  Tatsuhiko MIURA ,  Takashi SATO ,  Katsuhiro MITSUI ,  Daisuke ONO

IPC分类号： H01L21/3205 ,  B05D3/02 ,  B05D3/06

CPC分类号： H01L21/67748 ,  H01L21/67207 ,  H01L21/67742 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/05624 ,  H01L2224/05655 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is a manufacturing method for improving the reliability of a semiconductor device having a back electrode. After formation of semiconductor elements on the surface of a silicon substrate, the backside surface thereof, which is opposite to the element formation surface, is subjected to the following steps in a processing apparatus. After deposition of a first metal film over the backside surface of the silicon substrate in a first chamber, it is heat treated to form a metal silicide film. Then, a nickel film is deposited in a third chamber, followed by deposition of an antioxidant conductor film in a second chamber. Heat treatment for alloying the first metal film and the silicon substrate is performed at least prior to the deposition of the nickel film. The first chamber has therefore a mechanism for depositing the first metal film and a lamp heating mechanism.

摘要翻译： 提供一种用于提高具有背面电极的半导体器件的可靠性的制造方法。 在硅衬底的表面上形成半导体元件之后，在与元件形成表面相对的背面，在处理设备中进行以下步骤。 在第一室中的硅衬底的背面上沉积第一金属膜之后，对其进行热处理以形成金属硅化物膜。 然后，将镍膜沉积在第三室中，随后在第二室中沉积抗氧化剂导体膜。 至少在沉积镍膜之前进行用于合金化第一金属膜和硅衬底的热处理。 因此，第一室具有用于沉积第一金属膜和灯加热机构的机构。

公开(公告)号：US20120309191A1

公开(公告)日：2012-12-06

申请号：US13470844

申请日：2012-05-14

申请人： Tatsuhiko MIURA

发明人： Tatsuhiko MIURA

IPC分类号： H01L21/321

CPC分类号： H01L21/68764 ,  C23C14/34 ,  C23C14/352 ,  H01L21/28512 ,  H01L21/6719 ,  H01L21/67748 ,  H01L21/68735 ,  H01L21/68771 ,  H01L21/68785 ,  H01L21/76855 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813

摘要： In the manufacturing steps of a power-type semiconductor device, after grinding the back surface of the semiconductor wafer, when a metal film is deposited by sputtering deposition over the back surface of the wafer in a preheated state, the wafer is contained in an annular susceptor, and processed. A radial vertical cross section of the annular shape of the susceptor has a first upper surface closer to a horizontal surface for holding a peripheral portion of the top surface of the semiconductor wafer against gravity, and a second upper surface continued to and located outside the first upper surface and closer to a vertical surface for holding a side surface of the semiconductor wafer against lateral displacement.

摘要翻译： 在功率型半导体器件的制造步骤中，在研磨半导体晶片的背面之后，当通过在预热状态下通过溅射沉积在晶片的背面上沉积金属膜时，晶片被包含在环形 感受器，并处理。 基座的环形形状的径向垂直横截面具有靠近水平表面的第一上表面，用于保持半导体晶片的顶表面的周边部分免受重力，第二上表面继续并位于第一 上表面并且更靠近垂直表面，用于保持半导体晶片的侧表面防止横向位移。

公开(公告)号：US20100291767A1

公开(公告)日：2010-11-18

申请号：US12727337

申请日：2010-03-19

申请人： Tatsuhiko MIURA

发明人： Tatsuhiko MIURA

IPC分类号： H01L21/768

CPC分类号： H01L21/28568 ,  C23C14/165 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/76846 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53223 ,  H01L27/0255 ,  H01L29/0696 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42372 ,  H01L29/456 ,  H01L29/47 ,  H01L29/4966 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： In MOSFET having SBD as a protection element, a TiW (alloy having tungsten as a main component) film is used as an aluminum-diffusion barrier metal film below an aluminum source electrode in order to secure properties of SBD. The present inventors have found that a tungsten-based barrier metal film is in the form of columnar grains having a lower barrier property than that of a titanium-based barrier metal film such as TiN so that aluminum spikes are generated relatively easily in a silicon substrate. In the present invention, when a tungsten-based barrier metal film is formed by sputtering as a barrier metal layer between an aluminum-based metal layer and a silicon-based semiconductor layer therebelow, the lower layer is formed by ionization sputtering while applying a bias to the wafer side and the upper layer is formed by sputtering without applying a bias to the wafer side.

摘要翻译： 在具有SBD作为保护元件的MOSFET中，为了确保SBD的特性，使用TiW（具有钨作为主要成分的合金）膜作为铝源电极下方的铝扩散阻挡金属膜。 本发明人已经发现，钨基阻挡金属膜是具有比钛基阻挡金属膜如TiN低的阻挡性的柱状晶体的形式，使得在硅衬底中相对容易地产生铝尖峰 。 在本发明中，当通过溅射形成钨基阻挡金属膜作为铝基金属层和其下的硅基半导体层之间的阻挡金属层时，通过电离溅射形成下层，同时施加偏压 并且通过溅射形成上层，而不向晶片侧施加偏压。

公开(公告)号：US20100255677A1

公开(公告)日：2010-10-07

申请号：US12718175

申请日：2010-03-05

申请人： Tatsuhiko MIURA

发明人： Tatsuhiko MIURA

IPC分类号： H01L21/768

CPC分类号： H01L29/7813 ,  H01L21/2855 ,  H01L21/76808 ,  H01L21/76843 ,  H01L21/76877 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397

摘要： It has been found by the present inventors, et. al. that, in a modern 0.15 μm power MOSFET, aluminum voids (voids formed in aluminum type electrode) are generated frequently in trench portions (source contact trenches) caused by the reduction of a cell pitch for refinement. It is considered to be attributable to that the defects are generated mainly due to sudden increase of the aspect ratio from 0.84 in the previous generation to 2.8 in the current generation. That is, according to an invention of the present application, concave portions of repetitive trenches having a high aspect ratio are filled with an aluminum type metal by ionized sputtering through out the processing from the formation to the filling of an aluminum type metal seed film.

摘要翻译： 本发明人等已经发现， al。 在现代的0.15μm功率MOSFET中，铝空隙（形成在铝型电极中的空隙）频繁地由于细胞间距减小而导致的沟槽部分（源极接触沟槽）中产生细化。 认为这是因为主要是由于上一代的纵深比从上一代的0.84突然增加到当代的2.8，造成了这些缺陷。 也就是说，根据本申请的发明，通过从形成到填充铝型金属种子膜的处理，通过电离溅射，用铝型金属填充具有高纵横比的重复沟槽的凹部。