摘要:
A magnetic bubble memory device comprises a plurality of minor loops for storage of data information and a map loop for storage of defective-loop information, etc. The number of bits of the map loop is selected to be N times as large as the number of bits of each minor loop, N being an integer not smaller than 2.
摘要:
A semiconductor integrated circuit receiving at its input pin the terminal voltage of a capacitor which is connected to a power source through a resistor so as to detect the level of the power voltage. The circuit is provided with a level shift circuit which shifts the incoming power voltage level by a predetermined value so that a reset signal is produced by detecting the output of the level shift circuit falling below the threshold level of a logic circuit.
摘要:
A magnetic bubble memory has a plurality of minor loops for storing data represented by magnetic bubble sequences, a write line for transferring write data to couple them to the minor loops and a read line for transferring read data to a bubble detector. The read line is coupled to a plurality of auxiliary loops through replicators and the auxiliary loops are coupled to the minor loops through replicators. The data replicated to the auxiliary loops are read out.
摘要:
A series resonant drive circuit for a magnetic bubble memory includes X- and Y-coils arranged orthogonally to each other for generating a rotating magnetic field applied to a magnetic bubble memory chip, resonance capacitors each connected to a corresponding one of the X- and Y-coils for forming a series resonance circuit with the corresponding coil at a frequency of the rotating magnetic field, power supplies each connected to a corresponding one of the resonance circuits, and an inductance device connected in series with both of the resonance circuits and a capacitance device connected between the resonance circuits to compensate a mutual inductance due to the inductive coupling between the X- and Y-coils and a capacitance due to the capacitive coupling between the X- and Y-coils. Further, the temperature coefficient of the capacitance device is selected so that the temperature coefficients of the mutual inductance and capacitance between the coils can be compensated.
摘要:
A magnetic bubble memory device is provided with a plurality of memory modules each having at least one magnetic bubble chip. Each module generates a clock for determining the timing to drive the magnetic bubble chip and controls the operation of the magnetic bubble chip. The addresses of a main memory are cyclically allocated to the memory modules in a given unit, so that data transmission can be performed between the memory modules operated asynchronously with each other and the main memory allocated thereto.
摘要:
A magnetic bubble memory device including a magnetic bubble chip of major-minor structure is disclosed in which an integer m prime to the number n of bits of a minor loop is selected from integers i satisfying an equation i=(2.sup..alpha. .+-.1).multidot.2.sup..beta. +1 or i=(2.sup..alpha. .+-.1).multidot.2.sup..beta., and logical addresses on the minor loop are assigned in such a manner that adjacent logical addresses are spaced apart from each other by m bits.
摘要:
A series resonance drive circuit for a magnetic bubble memory comprises a magnetic bubble memory chip or chips, X and Y coils arranged orthogonally to each other to form a rotating magnetic field in a plane of the chip or chips, resonance capacitors connected in series with the X and Y coils to form series resonance circuits with the X and Y coils at a frequency of the rotating magnetic field, A.C. power supplies connected to the resonance circuit, and a reactance device connected to the resonance circuits to compensate a mutual inductance due to a mutual inductive coupling between the X and Y coils and a capacitance due to a capacitive coupling between the X and Y coils. The reactance device includes a mutual inductance device, or an inductance device and a capacitance device.
摘要:
In a memory device which has a plurality of recirculating type storage loops and in which information of the same addresses of the respective storage loops can be read and written in parallel, a memory device wherein information representing whether or not the corresponding storage loop is a bad or defective loop is written in a specified address of each of the storage loops.
摘要:
A method for producing an optical fiber comprises (i) the step of depositing a barrier layer on the inner wall surface of a glass tube by the CVD (chemical vapor deposition) process, said barrier layer being capable of preventing the diffusion of impurities and being made of high-silica glass which has a refractive index that is substantially equal to that of the glass tube and which contains at least one substance for lowering the refractive index of silica and at least one substance for raising the refractive index of silica, (ii) the step of depositing a glass film of desired refractive index on the barrier layer by the CVD process, (iii) the step of heating and collapsing the resultant glass tube into a composite rod or the so-called optical fiber preform, and (iv) the step of heating and drawing said optical fiber preform into the optical fiber, whereby the optical fiber which has the impurity diffusion-preventing layer between the core and the outside glass layer can be easily produced.
摘要:
A storage comprising an object access module for the shared part for implementing advanced I/O provides an interface for registering and deleting object description data declaring how to store objects within a second storage, in order to reduce the development cost of modules for implementing functions. Also, in order to reduce the total cost of ownership, modules are transferred to the storage through a management computer. The present invention allows the storage for contiguously providing functions effective to a vast range of applications to be provided with lower development cost as well as lower total cost of ownership.