摘要:
A chip-type surge absorber and method for producing same, wherein the chip-type surge absorber includes an insulating substrate in the shape of a rectangular parallelepiped; an insulating hermetic cap open at a bottom side thereof, for forming, together with the insulating substrate, a box-shaped hermetically sealed cavity filled with a discharge gas; terminal electrodes disposed at both ends in the hermetically sealed cavity; a pair of discharge electrodes which are formed in the hermetically sealed cavity such that a discharge gap is formed between the discharge electrodes and such that the discharge electrodes are electrically connected to corresponding terminal electrodes; and connection surfaces for increasing the connection area for the connection between the discharge electrodes and the terminal electrodes.
摘要:
When no synchronization signal is transmitted over a system bus (115), a master repeater is arbitrarily selected from a plurality of repeaters (1112 to 111n), starts transmitting a synchronization signal over the system bus (115), and transmits information to the system bus (115) in synchronization with the synchronization signal. Other slave repeaters transmit information to the system bus (115) in synchronization with the synchronization signal transmitted by the master repeater.
摘要:
Plural repeaters (1111 to 111n) are connected one another via a system bus (115), and each of which detects the state of another repeater by checking a signal transmitted over the system bus (115). When stopping the operation of home repeater (e.g., the repeater (1111)) which performs relaying process among wireless terminal devices (TA) to (TH), a secondary repeater (e.g., the repeater (1112)) set beforehand detects that the home repeater breaks down as the secondary repeater becomes unable to detect the signal over the system bus (115). The secondary repeater responds to the detection and bears the relaying process instead of the home repeater.
摘要:
Disclosed herein is a method for separating an arsenic mineral from a copper-bearing material, including the steps of grinding a copper-bearing material containing arsenic, adding water to the copper-bearing material to prepare a slurry, and adding a flotation agent including a depressant, a frother, and a collector to the slurry and blowing air into the slurry for performing flotation to obtain a copper concentrate, wherein the depressant is a chelator. As the chelator, a polyethyleneamine or the like is used. Particularly, when triethylenetetramine is used as the chelator, the amount of triethylenetetramine to be added is preferably 1 to 10 equivalents relative to the amount of soluble copper generated by oxidation of the copper-bearing material, and the pH of the slurry is more preferably adjusted to 7 or more but 8 or less before the slurry is subjected to the flotation.
摘要:
[Problems]Disclosed is a surge absorber which can absorb a surge having a long wave tail, wherein a stable sparkover voltage is obtained without applying a discharging aid to electrodes.[Means for Solving the Problems]The surge absorber is comprised of a pair of terminal electrode members (2) which are opposed to each other; and the insulation tube (3) on which the pair of terminal electrode members (2) are disposed on opposite ends thereof and that has a discharge control gas sealed therein. Bulging electrode elements (4) having an expanded center portion (4a) are formed on the inner surfaces of the terminal electrode members (2). The bulging electrode elements (4) contain metal which can emit more electrons than the terminal electrode members (2).
摘要:
A semiconductor storage device includes a first nonvolatile memory to store user data of a file, a second nonvolatile memory to store management data of the file, the second nonvolatile memory being different in type from the first nonvolatile memory, and a controller to control read/write of data with respect to the first and second nonvolatile memories.
摘要:
A process is disclosed for the preparing silicone polyethers by reacting; (A) a polyether having at least one terminally unsaturated aliphatic hydrocarbon group and an alkali metal content of less than 50 ppm, (B) an organohydrogensiloxane having an acid number of less than 0.005, via a hydrosilylation reaction. The process is particularly useful to prepare silicone polyethers of improved quality via a continuous process.
摘要:
A semiconductor storage device includes a first nonvolatile memory to store user data of a file, a second nonvolatile memory to store management data of the file, the second nonvolatile memory being different in type from the first nonvolatile memory, and a controller to control read/write of data with respect to the first and second nonvolatile memories.
摘要:
Wireless terminal devices (TA) to (TH) each detects whether channel information received from each of repeaters (1111) to (111n) indicates an occupied state or an idle state, and when detecting a channel in an idle state, writes identification information of that channel in a RAM (23). The wireless terminal devices (TA) to (TH) each selects a piece of identification information of a channel among plural pieces of identification information of a channel written in the RAM (23) to start making a call to a channel of the selected identification information.