摘要:
Efficient leveling among a plurality of FMPKs 130 including a newly added or replaced FMPK 130. When a storage controller 110 lacks free blocks in real FMPKs 130 and any FMPK 130 of the real FMPKs 130 and an added substitute FMPK 130 are selected as leveling object devices, if the attribute of a block in the real FMPK 130 belonging to the leveling object devices is “Hot,” data larger than a threshold value from among data belonging to that block is migrated to a block in the substitute FMPK 130; or if the attribute of a block in the real FMPK 130 belonging to the leveling object devices is “Cold,” data smaller than the threshold value from among data belonging to that block is migrated to a block in the substitute FMPK 130.
摘要:
The amount of data to be stored in a semiconductor nonvolatile memory can be reduced and overhead associated with data processing can be reduced. When a microprocessor 112 receives a write request from a host computer 300 and data D1 to D3 exist in a cache slot 117, the microprocessor 112 reads the LBA of each piece of the data, manages each piece of the data D1 to D3 using a bitmap table 118 by associating them with their LBAs, generates a specific command CMD based on the LBAs of the data D1 to D3, adds the data D1 to D3 and addresses ADD1 to ADD3 indicating where the data D1 to D3 are to be stored, to the specific command CMD, and sends it to an FMPK 30. The FMPK 130 stores each piece of update data in a specified block in the flash memory 135 based on the specific command CMD.
摘要:
The amount of data to be stored in a semiconductor nonvolatile memory can be reduced and overhead associated with data processing can be reduced. When a microprocessor 112 receives a write request from a host computer 300 and data D1 to D3 exist in a cache slot 117, the microprocessor 112 reads the LBA of each piece of the data, manages each piece of the data D1 to D3 using a bitmap table 118 by associating them with their LBAs, generates a specific command CMD based on the LBAs of the data D1 to D3, adds the data D1 to D3 and addresses ADD1 to ADD3 indicating where the data D1 to D3 are to be stored, to the specific command CMD, and sends it to an FMPK 30. The FMPK 130 stores each piece of update data in a specified block in the flash memory 135 based on the specific command CMD.
摘要:
A storage system 100, which has a plurality of flash packages 230, has a function for minimizing the imbalance of the number of deletions of each block inside the flash package 230 and a block-unit capacity virtualization function, and efficiently manifests lessening of the imbalance of the number of deletions and reduction in the data storage capacity for the entire storage system 100 by having functions for calculating the number of deletions and the data occupancy of each flash package 230, and for transferring data between the flash packages 230 on the basis of the values of these number of deletions and data occupancy.
摘要:
A controller in a flash memory device manages erase count of each physical block and manages the erase frequency of each logical block. The controller allocates a logical block whose erase frequency is high to one or more physical blocks whose erase count is low.
摘要:
A storage system 100, which has a plurality of flash packages 230, has a function for minimizing the imbalance of the number of deletions of each block inside the flash package 230 and a block-unit capacity virtualization function, and efficiently manifests lessening of the imbalance of the number of deletions and reduction in the data storage capacity for the entire storage system 100 by having functions for calculating the number of deletions and the data occupancy of each flash package 230, and for transferring data between the flash packages 230 on the basis of the values of these number of deletions and data occupancy.
摘要:
The storage system comprises a plurality of flash packages configuring one or more RAID groups, and a controller coupled to the plurality of flash packages. Each flash package comprises a plurality of flash chips configured from a plurality of physical blocks. The controller identifies a target area related to an unnecessary area, unmaps a physical block allocated to a logical block belonging to this target area from this logical block, and manages the unmapped physical block as a free block.
摘要:
A controller in a flash memory device manages erase count of each physical block and manages the erase frequency of each logical block. The controller allocates a logical block whose erase frequency is high to one or more physical blocks whose erase count is low.
摘要:
The storage system comprises a plurality of flash packages configuring one or more RAID groups, and a controller coupled to the plurality of flash packages. Each flash package comprises a plurality of flash chips configured from a plurality of physical blocks. The controller identifies a target area related to an unnecessary area, unmaps a physical block allocated to a logical block belonging to this target area from this logical block, and manages the unmapped physical block as a free block.
摘要:
For a storage apparatus in which flash memory disks and hard disks coexist, high-density mounting of flash memory modules is achieved. A storage apparatus in accordance with the present invention includes flash memories and a storage controller. A second storage apparatus including magnetic disks is connected to the storage apparatus. For creation of a logical volume, the storage controller can form a storage area using a flash memory or a magnetic disk. When an input/output request is issued from a host computer, if a storage area is formed with a flash memory, the storage controller directly accesses the flash memory to handle the input/output request. When the storage apparatus defines a storage area formed with a flash memory, the storage apparatus defines the storage area by adding up the capacity of a storage area to be provided for the host computer and a substitute area capacity determined in consideration of restrictions imposed on the number of times of deletion of the flash memory.