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    Method of Manufacturing High Breakdown Voltage Semiconductor Device
    1.
    发明申请
    Method of Manufacturing High Breakdown Voltage Semiconductor Device 审中-公开
    制造高击穿电压半导体器件的方法

    公开(公告)号：US20120178223A1

    公开(公告)日：2012-07-12

    申请号：US13235193

    申请日：2011-09-16

    申请人： Yoshinosuke Nishijo ,  Hironobu Shibata ,  Hiroshi Ishibashi

    发明人： Yoshinosuke Nishijo ,  Hironobu Shibata ,  Hiroshi Ishibashi

    IPC分类号： H01L21/331

    CPC分类号： H01L29/66348 ,  H01L21/268 ,  H01L29/7397

    摘要： According to one embodiment, a method of manufacturing a semiconductor device includes a polishing step, a first amorphous silicon film formation step, a single crystallization step and a buffer layer formation step. In the first amorphous silicon film formation step, a first amorphous silicon film of the first conductivity type is formed on the polished back surface of the high-resistance layer, the first amorphous silicon film having a higher impurity concentration than the high-resistance layer. In the single crystallization step, the first amorphous silicon film is single-crystallized by irradiating the first amorphous silicon film with a first laser. In the buffer layer formation step, the formation and single-crystallization of the first amorphous silicon film are repeated more than once to form a buffer layer of the first conductivity type on the back surface of the high-resistance layer, the buffer layer having a higher impurity concentration than the high-resistance layer.

    摘要翻译： 根据一个实施例，制造半导体器件的方法包括抛光步骤，第一非晶硅膜形成步骤，单一结晶步骤和缓冲层形成步骤。 在第一非晶硅膜形成步骤中，第一导电类型的第一非晶硅膜形成在高电阻层的抛光后表面上，第一非晶硅膜的杂质浓度高于高电阻层。 在单结晶化步骤中，通过用第一激光照射第一非晶硅膜来使第一非晶硅膜单晶化。 在缓冲层形成步骤中，第一非晶硅膜的形成和单晶化重复多于一次以在高电阻层的背面上形成第一导电类型的缓冲层，缓冲层具有 杂质浓度高于高电阻层。

    Liquid developer for electrostatic photography
    5.
    发明授权
    Liquid developer for electrostatic photography 失效
    用于静电摄影的液体开发商

    公开(公告)号：US5055369A

    公开(公告)日：1991-10-08

    申请号：US325795

    申请日：1989-03-20

    申请人： Eiichi Kato ,  Hiroshi Ishibashi ,  Kazuo Ishii

    发明人： Eiichi Kato ,  Hiroshi Ishibashi ,  Kazuo Ishii

    IPC分类号： G03G9/12 ,  G03G9/13

    CPC分类号： G03G9/133 ,  G03G9/131

    摘要： A liquid developer for electrostatic photography is disclosed. The liquid developer comprises a resin dispersed as grains in a non-aqueous solvent having an electrical resistance of 10.sup.9 .OMEGA.cm or more and a dielectric constant of 3.5 or less, which is characterized in that the dispersed resin grains are copolymer resin grains obtained by polymerizing a solution containing at least one monofunctional monomer (A) which is soluble in the non-aqueous solvent but becomes insoluble therein after polymerization and at least one monofunctional macromonomer (B) which is composed of a polymer moiety having a repeating unit of the following formula (I) and a copolymerizable double bond-containing group of the following formula (II) bonded to only one terminal of the main chain of the polymer moiety and which has a number average molecular weight of 1.times.10.sup.4 or less, in the presence of a resin which is soluble in the non-aqueous solvent and which contains no graft group capable of polymerizing with the monomers; ##STR1## In formula (I), X represents --COO--, --OCO--, --CH.sub.2 OCO--, --CH.sub.2 COO--, --O--, --SO.sub.2 --, ##STR2## R.sub.1 represents a hydrogen atom or a hydrocarbon group having from 1 to 18 carbon atoms;Y represents a hydrocarbon group having from 1 to 22 carbon atoms;a.sub.1 and a.sub.2 each represents a hydrocarbon atom, a halogen atom, a cyano group, a hydrocarbon group having from 1 to 8 carbon atoms, a group --COO--Z or a group --COO--Z as interrupted by a hydrocarbon group having from 1 to 8 carbon atoms; andZ represents a hydrocarbon group having from 1 to 18 carbon atoms;In formula (II), V has the same meaning as X in formula (I); andb.sub.1 and b.sub.2 each is selected from the same groups as a.sub.1 or a.sub.2 in formula (I).The liquid developer has excellent re-dispersibility, storability, image reproducibility, and fixability.

    Method for color photographic processing
    7.
    发明授权
    Method for color photographic processing 失效
    彩色照相处理方法

    公开(公告)号：US4144068A

    公开(公告)日：1979-03-13

    申请号：US873750

    申请日：1978-01-30

    申请人： Hiroshi Ishibashi ,  Nobuo Sakai ,  Kiyoshi Imai ,  Junya Nakajima

    发明人： Hiroshi Ishibashi ,  Nobuo Sakai ,  Kiyoshi Imai ,  Junya Nakajima

    IPC分类号： G03C7/42 ,  G03C5/50 ,  G03C5/32

    CPC分类号： G03C7/421

    摘要： In a method of processing an image-wise exposed silver halide color photographic material by applying thereto at least a color development processing and a silver removal processing (including performing a bleaching and a fixing separately or simultaneously, (e.g., a blixing)), the improvement which comprises processing, after the color development processing, the silver halide color photographic material with a processing bath containing a compound, as a bleach accelerator, represented by the following general formula (I): ##STR1## wherein R represents an --NR.sup.4 R.sup.5 group, an --O--R.sup.6 group or an --S--R.sup.6 group; R.sup.6 represents an atomic group necessary for forming a ring together with R.sup.1 ; R.sup.1, R.sup.4 and R.sup.5, which may be the same or different, each represents a hydrogen atom or an alkyl group; R.sup.2 and R.sup.3, which may be the same or different, each represents a hydrogen atom or a methyl group; n represents 1 or 2; X represents an amino group, a hydroxyl group, a --COO(M).sub.m group or an --SO.sub.3 (M).sub.m group; M represents a cation rendering the compound water soluble; and m represents 0 or 1 and is 0 when the compound forms an inner salt; the nitrogen atom bound to R.sup.1 may be quaternized with the charge of the quaternized nitrogen atom being neutralized by an acid group and R.sup.1 may form a ring together with R.sup.4 or R.sup.5 ; with the processing bath being used prior to or as a bleach bath or a blix bath, each containing a ferric ion complex as a bleaching agent.

    摘要翻译： 在通过对其进行至少显色处理和除银处理（包括分别或同时执行漂白和固定（例如，混合））的方法来处理成像曝光的卤化银彩色照相材料的方法中， 改进之处在于，在显色处理之后，用含有下述通式（I）表示的漂白促进剂的化合物的处理槽处理卤化银彩色照相材料：其中R表示 -NR4R5基团，-O-R6基团或-S-R6基团; R6表示与R1一起形成环所必需的原子团; R 1，R 4和R 5可以相同或不同，各自表示氢原子或烷基; R 2和R 3可以相同或不同，各自表示氢原子或甲基; n表示1或2; X表示氨基，羟基，-COO（M）m基或-SO 3（M）m基; M表示化合物水溶性的阳离子; 当化合物形成内盐时，m表示0或1，为0; 与R1结合的氮原子可以被季铵化，季铵化氮原子的电荷被酸基中和，R1可以与R4或R5一起形成环; 在处理浴之前使用或作为漂白浴或混合浴使用，每个含有铁离子络合物作为漂白剂。

    Beltline weather strip
    10.
    发明授权
    Beltline weather strip 失效
    Beltline天气条

    公开(公告)号：US5679434A

    公开(公告)日：1997-10-21

    申请号：US595294

    申请日：1996-02-01

    申请人： Hiroshi Ishibashi ,  Hideki Naito

    发明人： Hiroshi Ishibashi ,  Hideki Naito

    IPC分类号： B60J1/17 ,  B60J10/04 ,  B60J10/08 ,  E06B7/16

    CPC分类号： B60J10/75 ,  Y10T428/24182

    摘要： A beltline weather strip accommodated in a door panel for elastically contacting a door glass plate and for sliding the door glass plate comprises a base which is substantially parallel to the door glass plate with a cored bar embedded therein, a solid lip protruding from the upper door glass plate side surface of the base, and a hollow lip protruding from the lower door glass plate side surface of the base, wherein the upper side of the hollow lip is curved inwardly at the root end portion thereof and outwardly at the tip end portion thereof, forming an S-shaped curved upper side as a whole, and a ratio between the curvature radius Ra of the inwardly curved root end portion of the upper side of the hollow lip and the curvature radius Rb of the outwardly curved tip end portion thereof is set in the range of Ra: Rb=1:2.5 to 1:3.5. As a result, it is possible to provide a beltline weather strip being excellent in slidability to be superior to prior art by 20-30% while being equivalent thereto in lip reaction force.

    摘要翻译： 容纳在门板中用于弹性地接触门玻璃板并且用于滑动门玻璃板的带状天线条包括基本上平行于门玻璃板的基座，其中嵌入有芯棒，从上门突出的实心唇缘 基座的玻璃板侧面以及从基座的下门玻璃板侧面突出的中空唇缘，其中，中空唇缘的上侧在其根部端部向内弯曲，在其前端部向外侧弯曲 整体形成S形弯曲的上侧，中空唇缘的上侧的向内弯曲的根部的曲率半径Ra与其向外弯曲的前端部的曲率半径Rb之间的比率为 设定在Ra：Rb = 1：2.5〜1：3.5的范围内。 结果，可以提供一种具有优异的滑动性的带状耐候条，其在现有技术中优于20-30％，同时在唇形反作用力中相当于。