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1.发明授权公开(公告)号：US08076679B2
公开(公告)日：2011-12-13
申请号：US10593446
申请日：2005-03-18
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , A61K38/24 , C07K14/59 , F21K9/00 , H01L33/12 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , A61K2300/00 , H01L2924/00014
摘要： A plurality of semiconductor layers including a light-emitting layer (14) are formed on the main surface of a substrate (10) which is composed of a group III-V nitride semiconductor. A first n-type semiconductor layer (12) containing indium is formed between the light-emitting layer (14) and the substrate (10), thereby reducing the affect of damage in the substrate surface. By having such a structure, there is realized a semiconductor light-emitting device having uniform characteristics.
摘要翻译： 在由III-V族氮化物半导体构成的衬底（10）的主表面上形成包括发光层（14）的多个半导体层。 在发光层（14）和基板（10）之间形成含有铟的第一n型半导体层（12），从而减小基板表面的损伤的影响。 通过具有这种结构，实现了具有均匀特性的半导体发光器件。
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公开(公告)号：US20070057282A1
公开(公告)日：2007-03-15
申请号：US11521491
申请日：2006-09-15
IPC分类号： H01L29/74
摘要： A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlxGa1−x−yInyN (wherein 0.001≦x
摘要翻译： 一种半导体发光器件包括：衬底; 形成在所述基板上并且包括多个第一导电类型的III-V族氮化物半导体层的第一导电类型层; 形成在所述第一导电类型层上的有源层; 以及形成在所述有源层上并且包括第二导电类型的III-V族氮化物半导体层的第二导电类型层。 第一导电类型层包括由Al x Ga 1-xy N y N（其中0.001 <= x <0.1， 0
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3.发明授权公开(公告)号：US08178889B2
公开(公告)日：2012-05-15
申请号：US12305299
申请日：2007-06-19
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/0062 , H01L33/12 , H01L33/382
摘要： A semiconductor light emitting element includes a substrate 11 having a defect concentrated region 11a which has a crystal defect density higher than in the other region. On the substrate 11, a semiconductor layer 12 is formed. On the defect concentrated region 11a, a first electrode 13 is formed. On the semiconductor layer 12, a second electrode 14 is formed.
摘要翻译： 半导体发光元件包括具有比其他区域中的晶体缺陷密度高的缺陷集中区域11a的基板11。 在基板11上形成半导体层12。 在缺陷集中区域11a上形成第一电极13。 在半导体层12上形成第二电极14。
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公开(公告)号：US20110089466A1
公开(公告)日：2011-04-21
申请号：US12956437
申请日：2010-11-30
IPC分类号： H01L33/32
摘要： A semiconductor light emitting device includes a substrate 11 including a group III-V nitride semiconductor; a first-conductivity-type layer 12 formed on the substrate 11, the first-conductivity-type layer including a plurality of group III-V nitride semiconductor layers of first conductivity type; an active layer 13 formed on the first semiconductor layer 12; and a second-conductivity-type layer 14 formed on the active layer 13, the second-conductivity-type layer including a group III-V nitride semiconductor layer of second conductivity type. The first-conductivity-type layer 12 includes an intermediate layer 23 made of Ga1-xInxN (0
摘要翻译： 半导体发光器件包括：具有III-V族氮化物半导体的衬底11; 形成在基板11上的第一导电型层12，第一导电型层包括多个第一导电类型的III-V族氮化物半导体层; 形成在第一半导体层12上的有源层13; 以及形成在有源层13上的第二导电型层14，第二导电型层包括第二导电类型的III-V族氮化物半导体层。 第一导电型层12包括由Ga1-xInxN（0
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公开(公告)号：US20090321745A1
公开(公告)日：2009-12-31
申请号：US12556223
申请日：2009-09-09
IPC分类号： H01L33/00
摘要： A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlxGa1-x-yInyN (wherein 0.001≦x
摘要翻译： 一种半导体发光器件包括：衬底; 形成在所述基板上并且包括多个第一导电类型的III-V族氮化物半导体层的第一导电类型层; 形成在所述第一导电类型层上的有源层; 以及形成在所述有源层上并且包括第二导电类型的III-V族氮化物半导体层的第二导电类型层。 第一导电型层包括由Al x Ga 1-x-y In y N（其中0.001 <= x <0.1,0
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公开(公告)号：US20090267091A1
公开(公告)日：2009-10-29
申请号：US12066465
申请日：2006-09-12
IPC分类号： H01L33/00
摘要： A semiconductor light emitting device includes a substrate 11 including a group III-V nitride semiconductor; a first-conductivity-type layer 12 formed on the substrate 11, the first-conductivity-type layer including a plurality of group III-V nitride semiconductor layers of first conductivity type; an active layer 13 formed on the first semiconductor layer 12; and a second-conductivity-type layer 14 formed on the active layer 13, the second-conductivity-type layer including a group III-V nitride semiconductor layer of second conductivity type. The first-conductivity-type layer 12 includes an intermediate layer 23 made of Ga1-nInxN (0
摘要翻译： 半导体发光器件包括：具有III-V族氮化物半导体的衬底11; 形成在基板11上的第一导电型层12，第一导电型层包括多个第一导电类型的III-V族氮化物半导体层; 形成在第一半导体层12上的有源层13; 以及形成在有源层13上的第二导电型层14，第二导电型层包括第二导电类型的III-V族氮化物半导体层。 第一导电型层12包括由Ga1-nInxN（0
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公开(公告)号：US07601985B2
公开(公告)日：2009-10-13
申请号：US11521491
申请日：2006-09-15
IPC分类号： H01L31/0256
摘要： A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlxGa1−x−yInyN (wherein 0.001≦x
摘要翻译： 一种半导体发光器件包括：衬底; 形成在所述基板上并且包括多个第一导电类型的III-V族氮化物半导体层的第一导电类型层; 形成在所述第一导电类型层上的有源层; 以及形成在所述有源层上并且包括第二导电类型的III-V族氮化物半导体层的第二导电类型层。 第一导电型层包括由Al x Ga 1-x-y In y N（其中0.001 <= x <0.1,0
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公开(公告)号：US20090127568A1
公开(公告)日：2009-05-21
申请号：US12305299
申请日：2007-06-19
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/0062 , H01L33/12 , H01L33/382
摘要： A semiconductor light emitting element includes a substrate 11 having a defect concentrated region 11a which has a crystal defect density higher than in the other region. On the substrate 11, a semiconductor layer 12 is formed. On the defect concentrated region 11a, a first electrode 13 is formed. On the semiconductor layer 12, a second electrode 14 is formed.
摘要翻译： 半导体发光元件包括具有比其他区域中的晶体缺陷密度高的缺陷集中区域11a的基板11。 在基板11上形成半导体层12。 在缺陷集中区域11a上形成第一电极13。 在半导体层12上形成第二电极14。
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公开(公告)号：US07863623B2
公开(公告)日：2011-01-04
申请号：US12066465
申请日：2006-09-12
IPC分类号： H01L31/0256
摘要： A semiconductor light emitting device includes a substrate 11 including a group III-V nitride semiconductor; a first-conductivity-type layer 12 formed on the substrate 11, the first-conductivity-type layer including a plurality of group III-V nitride semiconductor layers of first conductivity type; an active layer 13 formed on the first semiconductor layer 12; and a second-conductivity-type layer 14 formed on the active layer 13, the second-conductivity-type layer including a group III-V nitride semiconductor layer of second conductivity type. The first-conductivity-type layer 12 includes an intermediate layer 23 made of Ga1-xInxN (0
摘要翻译： 半导体发光器件包括：具有III-V族氮化物半导体的衬底11; 形成在基板11上的第一导电型层12，第一导电型层包括多个第一导电类型的III-V族氮化物半导体层; 形成在第一半导体层12上的有源层13; 以及形成在有源层13上的第二导电型层14，第二导电型层包括第二导电类型的III-V族氮化物半导体层。 第一导电型层12包括由Ga1-xInxN（0
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公开(公告)号：US20110037092A1
公开(公告)日：2011-02-17
申请号：US12989630
申请日：2009-06-01
申请人： Atsuhiro Hori , Syuusaku Maeda , Hidenori Kamei
发明人： Atsuhiro Hori , Syuusaku Maeda , Hidenori Kamei
IPC分类号： H01L33/60
CPC分类号： H01L33/405 , H01L33/32 , H01L33/46
摘要： A light-emitting device includes an n-type semiconductor layer 13, a light-emitting layer 14, and a p-type semiconductor layer 15, which are sequentially stacked on a substrate 11; and a p-side electrode 16 formed on the p-type semiconductor layer 15. The p-side electrode 16 includes an adhesive layer 61 formed in contact with the p-type semiconductor layer 15, having a thickness ranging from 0.5 atomic layer to 1.5 atomic layer, and made of platinum; and a reflective layer 62 formed in contact with the adhesive layer 61, and made of a material containing silver.
摘要翻译： 发光器件包括依次堆叠在衬底11上的n型半导体层13，发光层14和p型半导体层15; 和形成在p型半导体层15上的p侧电极16.p侧电极16包括与p型半导体层15接触形成的粘合剂层61，其厚度范围为0.5原子层至1.5 原子层，由铂制成; 以及与粘合剂层61接触形成并由含有银的材料制成的反射层62。
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