公开(公告)号：US20110037092A1

公开(公告)日：2011-02-17

申请号：US12989630

申请日：2009-06-01

申请人： Atsuhiro Hori ,  Syuusaku Maeda ,  Hidenori Kamei

发明人： Atsuhiro Hori ,  Syuusaku Maeda ,  Hidenori Kamei

IPC分类号： H01L33/60

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/46

摘要： A light-emitting device includes an n-type semiconductor layer 13, a light-emitting layer 14, and a p-type semiconductor layer 15, which are sequentially stacked on a substrate 11; and a p-side electrode 16 formed on the p-type semiconductor layer 15. The p-side electrode 16 includes an adhesive layer 61 formed in contact with the p-type semiconductor layer 15, having a thickness ranging from 0.5 atomic layer to 1.5 atomic layer, and made of platinum; and a reflective layer 62 formed in contact with the adhesive layer 61, and made of a material containing silver.

摘要翻译： 发光器件包括依次堆叠在衬底11上的n型半导体层13，发光层14和p型半导体层15; 和形成在p型半导体层15上的p侧电极16.p侧电极16包括与p型半导体层15接触形成的粘合剂层61，其厚度范围为0.5原子层至1.5 原子层，由铂制成; 以及与粘合剂层61接触形成并由含有银的材料制成的反射层62。

公开(公告)号：US20100258837A1

公开(公告)日：2010-10-14

申请号：US12739295

申请日：2008-10-30

申请人： Atsuhiro Hori ,  Hidenori Kamei ,  Syuusaku Maeda

发明人： Atsuhiro Hori ,  Hidenori Kamei ,  Syuusaku Maeda

IPC分类号： H01L33/38 ,  H01L33/62

CPC分类号： H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor light emitting device, in which a light emitting layer is formed on one surface of a conductive substrate, and an n-type electrode and a p-type electrode are formed on the same side as the light emitting layer, there has been the problem that, if larger electric power is applied, heat is generated near the n-side electrode to reduce luminous efficiency.The n-side electrode has a predetermined length at a corner portion or along an edge of the substrate to disperse a current flowing from the n-side electrode into the substrate, thereby avoiding heat generation near the n-side electrode. In this type of semiconductor light emitting element, the existence of the n-side electrode reduces a light emitting area. Therefore, the length of the n-side electrode preferably ranges from 20% to 50% of the entire peripheral length of the substrate.

摘要翻译： 在导电性基板的一个表面上形成有发光层的半导体发光元件和与发光层同一侧形成有n型电极和p型电极的情况下， 如果施加较大的电力，则在n侧电极附近产生热量以降低发光效率的问题。 n侧电极在基板的角部或沿着边缘具有预定的长度，以将从n侧电极流入的电流分散到基板中，从而避免n侧电极附近的发热。 在这种类型的半导体发光元件中，n侧电极的存在减少了发光面积。 因此，n侧电极的长度优选为基板的整个周长的20〜50％。

公开(公告)号：US08309975B2

公开(公告)日：2012-11-13

申请号：US12739295

申请日：2008-10-30

申请人： Atsuhiro Hori ,  Hidenori Kamei ,  Syuusaku Maeda

发明人： Atsuhiro Hori ,  Hidenori Kamei ,  Syuusaku Maeda

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor light emitting device, in which a light emitting layer is formed on one surface of a conductive substrate, and an n-type electrode and a p-type electrode are formed on the same side as the light emitting layer, there has been the problem that, if larger electric power is applied, heat is generated near the n-side electrode to reduce luminous efficiency. The n-side electrode has a predetermined length at a corner portion or along an edge of the substrate to disperse a current flowing from the n-side electrode into the substrate, thereby avoiding heat generation near the n-side electrode. In this type of semiconductor light emitting element, the existence of the n-side electrode reduces a light emitting area. Therefore, the length of the n-side electrode preferably ranges from 20% to 50% of the entire peripheral length of the substrate.

摘要翻译： 在导电性基板的一个表面上形成有发光层的半导体发光元件和与发光层同一侧形成有n型电极和p型电极的情况下， 如果施加较大的电力，则在n侧电极附近产生热量以降低发光效率的问题。 n侧电极在基板的角部或沿着边缘具有预定的长度，以将从n侧电极流入的电流分散到基板中，从而避免n侧电极附近的发热。 在这种类型的半导体发光元件中，n侧电极的存在减少了发光面积。 因此，n侧电极的长度优选为基板的整个周长的20〜50％。

公开(公告)号：US08367442B2

公开(公告)日：2013-02-05

申请号：US12998521

申请日：2009-10-27

申请人： Kazuyuki Yamae ,  Hiroshi Fukshima ,  Masaharu Yasuda ,  Tomoya Iwahashi ,  Hidenori Kamei ,  Syuusaku Maeda

发明人： Kazuyuki Yamae ,  Hiroshi Fukshima ,  Masaharu Yasuda ,  Tomoya Iwahashi ,  Hidenori Kamei ,  Syuusaku Maeda

IPC分类号： H01L21/786

摘要： A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.

公开(公告)号：US20110263058A1

公开(公告)日：2011-10-27

申请号：US12998521

申请日：2009-10-27

申请人： Kazuyuki Yamae ,  Hiroshi Fukshima ,  Masaharu Yasuda ,  Tomoya Iwahashi ,  Hidenori Kamei ,  Syuusaku Maeda

发明人： Kazuyuki Yamae ,  Hiroshi Fukshima ,  Masaharu Yasuda ,  Tomoya Iwahashi ,  Hidenori Kamei ,  Syuusaku Maeda

IPC分类号： H01L33/32

CPC分类号： H01S5/0207 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02492 ,  H01S5/32341

摘要： A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.

摘要翻译： 一种制造半导体发光元件的方法包括在具有透明性的第一晶片上形成多层氮化物半导体层的半导体层形成步骤; 将多层氮化物半导体层接合到第一晶片的接合步骤; 沟槽形成步骤，形成从第一晶片的下表面延伸到多层氮化物半导体层的凹槽; 施加步骤，通过所述第一晶片向所述多层氮化物半导体层的下表面施加第一光，以降低所述多层氮化物半导体层与所述第一晶片之间的结合力; 分离步骤，从所述多层氮化物半导体层分离所述第一晶片; 以及切割步骤，沿着所述凹槽切割所述第二晶片以分成多个所述半导体发光元件。

公开(公告)号：US08399272B2

公开(公告)日：2013-03-19

申请号：US12998521

申请日：2009-10-27

申请人： Kazuyuki Yamae ,  Hiroshi Fukshima ,  Masaharu Yasuda ,  Tomoya Iwahashi ,  Hidenori Kamei ,  Syuusaku Maeda

发明人： Kazuyuki Yamae ,  Hiroshi Fukshima ,  Masaharu Yasuda ,  Tomoya Iwahashi ,  Hidenori Kamei ,  Syuusaku Maeda

IPC分类号： H01L21/786

CPC分类号： H01S5/0207 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02492 ,  H01S5/32341

摘要： A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.

摘要翻译： 一种制造半导体发光元件的方法包括在具有透明性的第一晶片上形成多层氮化物半导体层的半导体层形成步骤; 将多层氮化物半导体层接合到第一晶片的接合步骤; 沟槽形成步骤，形成从第一晶片的下表面延伸到多层氮化物半导体层的凹槽; 施加步骤，通过所述第一晶片向所述多层氮化物半导体层的下表面施加第一光，以降低所述多层氮化物半导体层与所述第一晶片之间的结合力; 分离步骤，从所述多层氮化物半导体层分离所述第一晶片; 以及切割步骤，沿着所述凹槽切割所述第二晶片以分成多个所述半导体发光元件。

公开(公告)号：US08507935B2

公开(公告)日：2013-08-13

申请号：US13388612

申请日：2010-07-27

申请人： Atsuhiro Hori ,  Hidenori Kamei

发明人： Atsuhiro Hori ,  Hidenori Kamei

IPC分类号： H01L33/36

CPC分类号： H01L33/405 ,  H01L33/20 ,  H01L33/44 ,  H01L33/46

摘要： A light emitting element and a light emitting device for which light extraction efficiency is enhanced are provided.A light emitting element 10 includes a substrate 1 having light transmittance, a semiconductor layer 2 in which an n-type layer 2a, an active layer 2b, and a p-type layer 2c are stacked, a reflective electrode 3 stacked on the semiconductor layer 2 and configured to reflect light emitted from the active layer 2b, toward the substrate 1, a p-side pad electrode 4 stacked on the reflective electrode 3, an insulating film 6 covering a side surface of the semiconductor layer 2 and having light transmittance, a reflective film 7 stacked on the insulating film 6 and having light reflectivity, and an n-side electrode 5 provided on the substrate 1.

摘要翻译： 提供了一种发光元件和提高光提取效率的发光器件。 发光元件10包括具有透光性的基板1，堆叠n型层2a，有源层2b和p型层2c的半导体层2，层叠在半导体层上的反射电极3 2，被配置为将从有源层2b发射的光朝向基板1反射，堆叠在反射电极3上的p侧焊盘电极4，覆盖半导体层2的侧面并具有透光性的绝缘膜6， 叠层在绝缘膜6上并具有光反射率的反射膜7和设置在基板1上的n侧电极5。

公开(公告)号：US20120126276A1

公开(公告)日：2012-05-24

申请号：US13388612

申请日：2010-07-27

申请人： Atsuhiro Hori ,  Hidenori Kamei

发明人： Atsuhiro Hori ,  Hidenori Kamei

IPC分类号： H01L33/36

CPC分类号： H01L33/405 ,  H01L33/20 ,  H01L33/44 ,  H01L33/46

摘要： A light emitting element and a light emitting device for which light extraction efficiency is enhanced are provided.A light emitting element 10 includes a substrate 1 having light transmittance, a semiconductor layer 2 in which an n-type layer 2a, an active layer 2b, and a p-type layer 2c are stacked, a reflective electrode 3 stacked on the semiconductor layer 2 and configured to reflect light emitted from the active layer 2b, toward the substrate 1, a p-side pad electrode 4 stacked on the reflective electrode 3, an insulating film 6 covering a side surface of the semiconductor layer 2 and having light transmittance, a reflective film 7 stacked on the insulating film 6 and having light reflectivity, and an n-side electrode 5 provided on the substrate 1.

摘要翻译： 提供了一种发光元件和提高光提取效率的发光器件。 发光元件10包括具有透光性的基板1，堆叠n型层2a，有源层2b和p型层2c的半导体层2，层叠在半导体层上的反射电极3 2，被配置为将从有源层2b发射的光朝向基板1反射，堆叠在反射电极3上的p侧焊盘电极4，覆盖半导体层2的侧面并具有透光性的绝缘膜6， 叠层在绝缘膜6上并具有光反射率的反射膜7和设置在基板1上的n侧电极5。

公开(公告)号：US08076679B2

公开(公告)日：2011-12-13

申请号：US10593446

申请日：2005-03-18

申请人： Yoshitaka Kinoshita ,  Hidenori Kamei

发明人： Yoshitaka Kinoshita ,  Hidenori Kamei

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  A61K38/24 ,  C07K14/59 ,  F21K9/00 ,  H01L33/12 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  A61K2300/00 ,  H01L2924/00014

摘要： A plurality of semiconductor layers including a light-emitting layer (14) are formed on the main surface of a substrate (10) which is composed of a group III-V nitride semiconductor. A first n-type semiconductor layer (12) containing indium is formed between the light-emitting layer (14) and the substrate (10), thereby reducing the affect of damage in the substrate surface. By having such a structure, there is realized a semiconductor light-emitting device having uniform characteristics.

摘要翻译： 在由III-V族氮化物半导体构成的衬底（10）的主表面上形成包括发光层（14）的多个半导体层。 在发光层（14）和基板（10）之间形成含有铟的第一n型半导体层（12），从而减小基板表面的损伤的影响。 通过具有这种结构，实现了具有均匀特性的半导体发光器件。

公开(公告)号：US20070057282A1

公开(公告)日：2007-03-15

申请号：US11521491

申请日：2006-09-15

申请人： Yoshitaka Kinoshita ,  Hidenori Kamei

发明人： Yoshitaka Kinoshita ,  Hidenori Kamei

IPC分类号： H01L29/74

CPC分类号： H01L33/12 ,  H01L33/32

摘要： A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlxGa1−x−yInyN (wherein 0.001≦x

摘要翻译： 一种半导体发光器件包括：衬底; 形成在所述基板上并且包括多个第一导电类型的III-V族氮化物半导体层的第一导电类型层; 形成在所述第一导电类型层上的有源层; 以及形成在所述有源层上并且包括第二导电类型的III-V族氮化物半导体层的第二导电类型层。 第一导电类型层包括由Al x Ga 1-xy N y N（其中0.001 <= x <0.1， 0