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公开(公告)号：US5519803A
公开(公告)日：1996-05-21
申请号：US302182
申请日：1994-09-09
CPC分类号： G02B6/132
摘要： Proposed is an improved optical waveguide consisting of a substrate plate such as a silicon wafer, an undercladding layer of silica glass thereon, a core line of silica glass extending on the undercladding layer and having a larger refractive index than the undercladding layer and an overcladding layer of silica glass having a smaller refractive index than the core line to cover the undercladding layer and the core line thereon altogether. Different from conventional optical waveguides of this type, of which each of the undercladding layer, core line and overcladding layer is formed by the flame deposition method of silica or electron-beam vapor deposition method followed by vitrification taking a relatively long time, the overcladding layer in the inventive optical waveguide is formed by forming a layer of an organopolysiloxane resin on the undercladding layer and core line followed by the oxidative thermal decomposition of the resin into silica and vitrification of the same. Alternatively, an optical waveguide, which is conventional as mentioned above but of which the thickness of the overcladding layer is greatly decreased, is provided with a top coating layer from the organopolysiloxane resin as above. The inventive optical waveguides can be manufactured with greatly increased productivity.
摘要翻译： 提出了一种改进的光波导，其由诸如硅晶片的基板，其上的二氧化硅玻璃的下包层，在下包层上延伸并且具有比下封层更大的折射率的石英玻璃芯线和外包层 具有比芯线折射率小的石英玻璃，以覆盖下包层和其上的芯线。 与传统的这种类型的光波导不同，其中通过二氧化硅的火焰沉积法或电子束气相沉积法形成下包层，芯线和外包层中的每一个，随后玻璃化花费相当长的时间，外包层 在本发明的光波导中通过在下包层和芯线上形成有机聚硅氧烷树脂层，然后将树脂氧化热分解成二氧化硅并使其玻璃化而形成。 或者，如上所述的常规的，但是外包层的厚度大大降低的光波导由如上所述的有机聚硅氧烷树脂设置有顶涂层。 本发明的光波导可以大大提高生产率来制造。
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2.发明授权Thin film chip of magnetic oxide garnet and magnetostatic surface wave device therewith 失效磁性氧化石榴石薄膜芯片及其静磁表面波装置
公开(公告)号：US5808525A
公开(公告)日：1998-09-15
申请号：US690576
申请日：1996-07-31
CPC分类号： H03H2/001
摘要： Proposed is an improvement in a magnetostatic surface wave device such as an S/N enhancer comprising a thin film chip of a magnetic oxide garnet, e.g., gallium-substituted YIG epitaxially grown on the surface of a substrate, e.g., GGG, to which a magnetic field is applied within the plane of the thin film. The low-pass cut-off frequency of the microwaves can be decreased to 400 MHz or lower and the half-value width of magnetic resonance .DELTA.H can be small enough when the principal plane of the thin film of the magnetic oxide garnet is the (110) plane and the magnetic field applied thereto is in such a direction that the angle between the direction of the magnetic field and the direction of the axis of the thin film within the (110) plane is in the range from .+-.27.degree. to .+-.33.degree..
摘要翻译： 提出了一种静电表面波装置的改进，例如S / N增强器，其包括磁性氧化物石榴石的薄膜芯片，例如外延生长在基底表面上的镓取代的YIG，例如GGG，其中 磁场施加在薄膜的平面内。 当磁性氧化石榴石的薄膜的主平面为（（））时，微波的低通截止频率可以降低到400MHz或更低，并且磁共振DELTA H的半值宽度可以足够小， 110）面，并且施加到其上的磁场的方向为使得（110）面内的薄膜的磁场方向与<100>轴方向之间的角度在+ -27°至+/- 33°。
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公开(公告)号：US5872652A
公开(公告)日：1999-02-16
申请号：US768292
申请日：1996-12-17
CPC分类号： G02B1/113 , G02B1/115 , G02F1/093 , Y10T403/479
摘要： An improvement is proposed relating to an optical isolator for bonding of the polarizer and analyzer of polarizing glass to the respective holder rings for position adjustment. The improvement comprises: (a) forming a metallized layer of a specific composition over at least two of the side surfaces of each of the polarizer and analyzer on the area of the surface excepting for the linear areas of 50 to 150 .mu.m width from the top and bottom surfaces of the polarizer or analyzer; and (b) bonding the polarizer and analyzer to the respective holder rings by soldering using a solder alloy with intervention of the metallized layer between the polarizer or analyzer and the holder ring. The invention further provides an optical part having, on at least one of the surfaces, a heat-resistant anti-reflection coating film which is a double-layered film consisting of a thin film of the titanium oxide TiO.sub.x (x=1.9 to 2.2) as the underlayer of high refractive index and a thin film of silicon dioxide as the overlayer of low refractive index.
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4.发明授权Optical isolator and optical part having heat-resistant anti-reflection coating 失效光隔离器和具有耐热防反射涂层的光学部件
公开(公告)号：US6163404A
公开(公告)日：2000-12-19
申请号：US193128
申请日：1998-11-17
CPC分类号： G02B1/113 , G02B1/115 , G02F1/093 , Y10T403/479
摘要： An improvement is proposed relating to an optical isolator for bonding of the polarizer and analyzer of polarizing glass to the respective holder rings for position adjustment. The improvement comprises: (a) forming a metallized layer of a specific composition over at least two of the side surfaces of each of the polarizer and analyzer on the area of the surface excepting for the linear areas of 50 to 150 .mu.m width from the top and bottom surfaces of the polarizer or analyzer; and (b) bonding the polarizer and analyzer to the respective holder rings by soldering using a solder alloy with intervention of the metallized layer between the polarizer or analyzer and the holder ring. The invention further provides an optical part having, on at least one of the surfaces, a heat-resistant anti-reflection coating film which is a double-layered film consisting of a thin film of the titanium oxide TiO.sub.x (x=1.9 to 2.2) as the underlayer of high refractive index and a thin film of silicon dioxide as the overlayer of low refractive index.
摘要翻译： 提出了涉及用于将偏振器和偏振玻璃分析仪粘合到用于位置调节的相应保持环的光隔离器的改进。 该改进包括：（a）在表面区域上的每个偏振片和分析器的至少两个侧表面上形成特定组成的金属化层，除了距离该区域的50至150μm宽的线性区域 偏振器或分析仪的顶部和底部表面; 和（b）通过使用焊料合金进行焊接，将偏振器和分析仪粘合到相应的保持环上，该金属化层介于偏振器或分析器与保持环之间。 本发明还提供了一种光学部件，在至少一个表面上具有由氧化钛TiO x（x = 1.9〜2.2）的薄膜构成的双层膜的耐热性防反射涂膜， 作为高折射率的底层和二氧化硅的薄膜作为低折射率的覆盖层。
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5.发明授权
公开(公告)号：US4968954A
公开(公告)日：1990-11-06
申请号：US353796
申请日：1989-05-18
申请人： Toshihiko Ryuo , Satoru Fukuda , Tatsuo Mori , Masayuki Tanno
发明人： Toshihiko Ryuo , Satoru Fukuda , Tatsuo Mori , Masayuki Tanno
CPC分类号： H01F10/245 , H03B9/142 , H03H2/001
摘要： An improved epitaxial single crystal wafer suitable as a working element of magnetostatic wave devices is proposed which comprises a substrate single crystal wafer of a rare earth gallium garnet, e.g., gadolinium gallium garnet, neodymium gallium garnet and samarium gallium garnet, and an epitaxial layer formed thereon having a chemical composition, different from conventional yttrium iron garnet, Y.sub.3 Fe.sub.5 O.sub.12, of the formula(Y.sub.1-x M.sub.x).sub.a Fe.sub.8-a O.sub.12 or (Y.sub.1-x M.sub.x).sub.a (Fe.sub.1-Y Q.sub.y).sub.8-a O.sub.12,in which M is an element selected from the group consisting of bismuth, lanthanum, gadolinium and lutetium, the subscript a is a positive number in the range from 3.0 to 3.1, the subscript x is a positive number in the range from 0.01 to 0.9, Q is an element selected from the group consisting of aluminum, gallium, indium and scandium and the subscript y is a positive number in the range from 0.1 to 0.2. These epitaxial wafers are advantageous in respect of the greatly decreased problem of mismatching in the lattice constants between the substrate and the epitaxial layer.
摘要翻译： 提出了一种适合作为静磁波器件的工作元件的改进的外延单晶晶片，其包括稀土镓石榴石的衬底单晶晶片，例如钆镓石榴石，钕镓石榴石和钐镓石榴石，以及形成的外延层 （Y1-xMx）aFe8-aO12或（Y1-xMx）a（Fe1-YQy）8-aO12的化学成分不同于常规的钇铁石榴石Y3Fe5O12，其中M是选自 由铋，镧，钆和镥构成的组，下标a为3.0〜3.1的正数，下标x为0.01〜0.9的正数，Q为选自 由铝，镓，铟和钪组成，下标y为0.1〜0.2的正数。 这些外延晶片对于衬底和外延层之间的晶格常数不匹配的大大降低的问题是有利的。
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6.发明授权Method for the preparation of magnetic oxide garnet single crystal for magnetostatic wave device 失效用于静磁波装置的磁性氧化石榴石单晶的制备方法
公开(公告)号：US5785752A
公开(公告)日：1998-07-28
申请号：US571097
申请日：1995-12-12
申请人： Masayuki Tanno , Toshihiko Ryuo
发明人： Masayuki Tanno , Toshihiko Ryuo
IPC分类号： C30B29/28 , C30B19/02 , H01F1/00 , H01F10/24 , H01P1/215 , H01P1/23 , H01P1/32 , H01P3/00 , C30B15/20
CPC分类号： H01F10/245 , C30B19/02 , C30B29/28 , Y10S117/902 , Y10S117/917
摘要： Proposed is an improvement in the method for the preparation of a chip of an oxide garnet film epitaxially having a specific chemical composition as grown on the surface of a GGG substrate wafer having a crystallographic plane orientation of (111), which is useful as a working element in a magnetostatic wave device such as high-frequency filters, signal noise enhancers, isolators and the like with decreased temperature dependence of the properties. The epitaxially grown single crystal film is adjusted to have such dimensions that the thickness h and the smallest dimension L within the plane of the film satisfy the relationship that the ratio h/L is in the range from 0.001 to 0.25.
摘要翻译： 提出了在具有（111）的晶面取向的GGG基板晶片的表面上生长具有特定化学组成的外延氧化石榴石膜的芯片的制备方法的改进，其可用作工作 诸如高频滤波器，信号噪声增强器，隔离器等的静磁波器件中具有降低的性能温度依赖性的元件。 调整外延生长的单晶膜的尺寸，使膜的平面内的厚度h和最小尺寸L满足比例h / L为0.001〜0.25的关系。
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公开(公告)号：US5479290A
公开(公告)日：1995-12-26
申请号：US240915
申请日：1994-05-10
CPC分类号： G02F1/0036 , H01F10/245
摘要： A Faraday's rotator comprises a magnetic crystal which has a composition represented by the following compositional formula: (Tb.sub.1-(a+b+c+d) Ln.sup.1.sub.a Ln.sup.2.sub.b Bi.sub.c M.sup.1.sub.d).sub.3 (Fe.sub.1-e M.sup.2.sub.e).sub.5 O.sub.12, has a lattice constant of 12.383.+-.0.006 .ANG. and is grown through the liquid phase epitaxial growth technique. In the foregoing formula, Ln.sup.1 is at least one element selected from the group consisting of Yb, Lu and Tm; Ln.sup.2 is at least one member selected from the group consisting of rare earth elements except for Yb, Lu, Tm and Tb; M.sup.1 is at least one element selected from the group consisting of Ca, Mg and Sr; M.sup.2 is at least one element selected from the group consisting of Al, Ga, Ti, Si and Ge; 0.2.ltoreq.a.ltoreq.0.6, 0.ltoreq.b.ltoreq.0.3, 0
摘要翻译： 法拉第旋转器包括具有由以下组成式表示的组成的磁性晶体：（Tb1-（a + b + c + d）Ln1aLn2bBicM1d）3（Fe1-eM2e）5O12，晶格常数为12.383 +/- 0.006 ANGSTROM并通过液相外延生长技术生长。 在上述式中，Ln1是选自Yb，Lu和Tm中的至少一种元素; Ln2是选自除了Yb，Lu，Tm和Tb之外的稀土元素中的至少一种; M1是选自Ca，Mg和Sr中的至少一种元素; M2是选自Al，Ga，Ti，Si和Ge中的至少一种元素; 0.2
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公开(公告)号：US5616176A
公开(公告)日：1997-04-01
申请号：US495934
申请日：1995-06-28
申请人： Satoru Fukuda , Masayuki Tanno , Toshihiko Ryuo
发明人： Satoru Fukuda , Masayuki Tanno , Toshihiko Ryuo
CPC分类号： H01F41/28 , C30B19/02 , C30B29/28 , H01F10/245
摘要： A novel rare earth-based oxide garnet single crystal suitable as a material of the elements in a magneto-optical device to exhibit a greatly decreased light absorption loss is proposed, which is prepared by the liquid epitaxial growth method on a oxide garnet single crystal wafer and having a chemical composition represented by the general formulaGd.sub.a Ho.sub.b Eu.sub.d Bi.sub.3-a-b-d Fe.sub.5-c M.sub.c O.sub.12,in which M is an element or a combination of elements selected from the group consisting of aluminum, scandium, gallium and indium, the subscript a is a positive number in the range from 1.1 to 2.1, the subscript b is a positive number in the range from 0.1 to 0.9, the subscript c is 0 or a positive number not exceeding 0.5 and the subscript d is zero or a positive number not exceeding 0.6 or, in particular, in the range from 0.03 to 0.6 with the proviso that 3-a-b-d is in the range from 0.7 to 1.2.
摘要翻译： 提出了一种新颖的稀土类氧化石榴石单晶，其适用于磁光器件中元素的材料，以显示大大降低的光吸收损耗，其通过在氧化石榴石单晶晶片上的液体外延生长法制备 并且具有由通式GdaHobEudBi3-ab-dFe5-cMcO12表示的化学组成，其中M是选自铝，钪，镓和铟的元素或元素的组合，下标a是正数 在1.1至2.1的范围内，下标b为0.1至0.9的正数，下标c为0或不超过0.5的正数，下标d为0或不超过0.6的正数， 特别是在0.03至0.6的范围内，条件是3-abd在0.7至1.2的范围内。
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9.发明授权Magnetostatic-wave chip and device comprising a rare earth iron-based oxide garnet 失效磁静电波芯片和包含稀土类铁基氧化物石榴石的装置
公开(公告)号：US5198297A
公开(公告)日：1993-03-30
申请号：US781100
申请日：1991-10-22
申请人： Masayuki Tanno , Toshihiko Ryuo
发明人： Masayuki Tanno , Toshihiko Ryuo
CPC分类号： H01F10/245 , H03H2/001 , Y10T428/265
摘要： A proposal is made for a magnetostatic-wave chip capable of treating a relatively large electric power even when the size of the magnetostatic-wave device, such as filters, delay lines, resonators and oscillators, constructed therewith is very small. The chip is prepared by the epitaxial growth of a rare earth-iron garnet film on the substrate surface and the desired performance of the device can be achieved when the parameters of .DELTA.H/4.pi.Ms,.DELTA.H being the half-value width of the magnetic rosonance peak at 9.2 GHz and 4.pi.Ms being the saturation magnetization, and the volume of the magnetostatic-wave film of the chip fall within the area defined by the five points P1 to P5 shown in FIG. 1.
摘要翻译： 即使当与其构成的静电波装置（例如滤波器，延迟线，谐振器和振荡器）的尺寸非常小时，仍然提出能够处理较大电力的静磁波芯片。 该芯片通过在衬底表面上的稀土 - 铁石榴石膜的外延生长制备，并且当DELTA H / 4 pi Ms，DELTA H的参数为半值宽度时，可以实现器件的期望性能 9.2GHz处的磁场强度峰值和4pi Ms是饱和磁化强度，并且芯片的静磁波膜的体积落在由图5所示的五个点P1至P5限定的区域内。 1。
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公开(公告)号：US06351331B1
公开(公告)日：2002-02-26
申请号：US09580242
申请日：2000-05-26
IPC分类号： G02F100
CPC分类号： H01F41/28 , G02F1/0036 , G02F1/09 , H01F1/346 , H01F10/245
摘要： A Faraday rotator whose Faraday's rotational angle has low temperature-dependency; a method for efficiently preparing the same; a magneto-optical element which makes use of the Faraday rotator and whose characteristic properties are not susceptive to temperature changes; and an optical isolator, which can be provided at a low price. A Faraday rotator consists of a garnet crystal represented by the following compositional formula and having a lattice constant of 12.470 ±0.013 Å: (Tb1−(a+b+c)LnaBibM1c)3(Fe1−dM2d)5O12 in the formula, Ln is an element selected from the group consisting of rare earth elements other than Tb; M1 represents an element selected from the group consisting of Ca, Mg and Sr; M2 is an element selected from the group consisting of Al, Ti, Si and Ge; and a to d are numerals satisfying the following relations: 0≦a≦0.5, 0
摘要翻译： 法拉第旋转角度法拉第转角低温依赖; 一种有效制备该方法的方法; 使用法拉第旋转器并且其特性不易受温度变化的磁光元件; 以及可以以低价格提供的光隔离器。 法拉第旋转器由以下组成式表示的具有12.470±0.013的晶格常数的石榴石晶体组成：在该式中，Ln是选自除Tb以外的稀土元素的元素; M1表示选自Ca，Mg和Sr的元素; M2是选自Al，Ti，Si和Ge的元素; a至d为满足以下关系的数字：0 <= a <= 0.5,0
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