公开(公告)号：US08519704B2

公开(公告)日：2013-08-27

申请号：US13300076

申请日：2011-11-18

申请人： Yosuke Ide ,  Masamichi Saito ,  Akira Takahashi ,  Tsuyoshi Nojima ,  Shigenobu Miyajima ,  Naoki Sakatsume ,  Kenji Ichinohe ,  Yoshihiro Nishiyama ,  Tatsuya Kogure ,  Hidekazu Kobayashi ,  Masahiro Iizuka

发明人： Yosuke Ide ,  Masamichi Saito ,  Akira Takahashi ,  Tsuyoshi Nojima ,  Shigenobu Miyajima ,  Naoki Sakatsume ,  Kenji Ichinohe ,  Yoshihiro Nishiyama ,  Tatsuya Kogure ,  Hidekazu Kobayashi ,  Masahiro Iizuka

IPC分类号： G01R33/09

CPC分类号： G01R15/205 ,  B82Y25/00 ,  G01R33/093

摘要： A magnetic-balance-system current sensor includes: a magnetoresistive element, a resistance value of the magnetoresistive element being changed by applying an induction magnetic field generated by a measurement target current; magnetic cores disposed near the magnetoresistive element; a feedback coil disposed near the magnetoresistive element and configured to generate a cancelling magnetic field that cancels out the induction magnetic field; and a magnetic-field detecting bridge circuit having two outputs. The measurement target current is measured on the basis of a current flowing through the feedback coil when the induction magnetic field and the induction magnetic field and the cancelling magnetic field cancel each other out. The feedback coil, the magnetic cores, and the magnetic-field detecting bridge circuit are formed on a same substrate. The feedback coil is of a spiral type, and the magnetic cores are provided above and below the feedback coil.

摘要翻译： 磁平衡系统电流传感器包括：磁阻元件，通过施加由测量目标电流产生的感应磁场来改变磁阻元件的电阻值; 设置在磁阻元件附近的磁芯; 设置在磁阻元件附近并被配置为产生抵消感应磁场的消除磁场的反馈线圈; 以及具有两个输出的磁场检测桥接电路。 当感应磁场和感应磁场和消除磁场相互抵消时，基于流过反馈线圈的电流来测量测量目标电流。 反馈线圈，磁芯和磁场检测桥式电路形成在同一基板上。 反馈线圈是螺旋型的，并且磁芯设置在反馈线圈的上方和下方。

公开(公告)号：US08269492B2

公开(公告)日：2012-09-18

申请号：US12891550

申请日：2010-09-27

申请人： Masamichi Saito ,  Akira Takahashi ,  Masahiro Iizuka ,  Tatsuya Kogure ,  Yosuke Ide ,  Yoshihiro Nishiyama ,  Kenji Ichinohe ,  Naoki Sakatsume ,  Tsuyoshi Nojima ,  Shigenobu Miyajima ,  Hidekazu Kobayashi

发明人： Masamichi Saito ,  Akira Takahashi ,  Masahiro Iizuka ,  Tatsuya Kogure ,  Yosuke Ide ,  Yoshihiro Nishiyama ,  Kenji Ichinohe ,  Naoki Sakatsume ,  Tsuyoshi Nojima ,  Shigenobu Miyajima ,  Hidekazu Kobayashi

IPC分类号： G01R33/09

CPC分类号： G01R15/205 ,  H01L43/08

摘要： A magnetic balance type current sensor measures a measured current which flows in a feedback coil when electrical conduction is provided by a voltage difference according to an induction magnetic field from the measured current and an equilibrium state is reached in which the induction magnetic field and a cancel magnetic field cancel each other. Sensor elements in a pair are arranged at positions with magnetic field from the measured current. The magnetization direction of the pinned magnetic layer in the magnetoresistive effect element of one sensor element is aligned in a forward direction with respect to the magnetic field formed by the measured current. The magnetization direction of the pinned magnetic layer in the magnetoresistive effect element of the other sensor element is aligned in a reverse direction with respect to the magnetic field formed by the measured current.

摘要翻译： 磁平衡型电流传感器测量在通过根据来自测量电流的感应磁场的电压差提供电传导时在反馈线圈中流动的测量电流，并且达到平衡状态，其中感应磁场和取消 磁场相互抵消。 一对传感器元件被布置在具有来自测量电流的磁场的位置处。 一个传感器元件的磁阻效应元件中的钉扎磁性层的磁化方向相对于由测量电流形成的磁场在正向方向上排列。 另一传感器元件的磁阻效应元件中的钉扎磁性层的磁化方向相对于由测量电流形成的磁场的反方向排列。

公开(公告)号：US08754642B2

公开(公告)日：2014-06-17

申请号：US13300064

申请日：2011-11-18

申请人： Yosuke Ide ,  Masahiro Iizuka ,  Masamichi Saito ,  Akira Takahashi ,  Hideharu Matsuo ,  Tsuyoshi Nojima ,  Shigenobu Miyajima ,  Naoki Sakatsume ,  Kenji Ichinohe ,  Yoshihiro Nishiyama ,  Tatsuya Kogure ,  Hidekazu Kobayashi

发明人： Yosuke Ide ,  Masahiro Iizuka ,  Masamichi Saito ,  Akira Takahashi ,  Hideharu Matsuo ,  Tsuyoshi Nojima ,  Shigenobu Miyajima ,  Naoki Sakatsume ,  Kenji Ichinohe ,  Yoshihiro Nishiyama ,  Tatsuya Kogure ,  Hidekazu Kobayashi

IPC分类号： G01R33/09

CPC分类号： B82Y25/00 ,  G01R15/205 ,  G01R31/006 ,  G01R33/093

摘要： A magnetic balance type current sensor includes a magnetoresistance effect element whose resistance value changes owing to the application of an induction magnetic field from a current to be measured; a feedback coil disposed in the vicinity of the magnetoresistance effect element and generating a cancelling magnetic field cancelling out the induction magnetic field; a magnetic field detection bridge circuit including two outputs causing a voltage difference corresponding to the induction magnetic field to occur; and a magnetic shield attenuating the induction magnetic field and enhancing the cancelling magnetic field, wherein, on the basis of the current flowing through the feedback coil at the time of an equilibrium state in which the induction magnetic field and the cancelling magnetic field are cancelled out, the current to be measured is measured, wherein the feedback coil, the magnetic shield, and the magnetic field detection bridge circuit are formed on a same substrate.

摘要翻译： 磁平衡型电流传感器包括磁阻效应元件，其电阻值由于施加来自待测量电流的感应磁场而改变; 设置在所述磁阻效应元件附近的反馈线圈，并产生抵消所述感应磁场的抵消磁场; 包括导致与感应磁场相对应的电压差的两个输出的磁场检测桥电路; 以及磁屏蔽，其使感应磁场衰减并增强抵消磁场，其中，基于在抵消感应磁场和抵消磁场的平衡状态时流过反馈线圈的电流 测量待测量的电流，其中反馈线圈，磁屏蔽和磁场检测桥接电路形成在同一衬底上。

公开(公告)号：US08395383B2

公开(公告)日：2013-03-12

申请号：US13037231

申请日：2011-02-28

申请人： Yoshihiro Nishiyama ,  Masamichi Saito ,  Akira Takahashi ,  Yosuke Ide ,  Hidekazu Kobayashi ,  Masahiro Iizuka

发明人： Yoshihiro Nishiyama ,  Masamichi Saito ,  Akira Takahashi ,  Yosuke Ide ,  Hidekazu Kobayashi ,  Masahiro Iizuka

IPC分类号： G01R33/09

CPC分类号： G01R15/205

摘要： A current sensor includes a magnetic detecting element, a bridge circuit including a plurality of resistance elements, and a feedback coil placed adjacent to the magnetic detecting element and generating a cancelling magnetic field for cancelling the induced magnetic field based on the output from the bridge circuit. The wiring patterns forming the bridge circuit are routed so as not to intersect with each other when seen in a plan view. Only the resistance elements constituting each series circuit of the bridge circuit are connected to each other by the wiring pattern in an enclosed area which encloses each resistance element constituting the bridge circuit, and the wiring pattern branched from the wiring pattern is connected to the terminal which is installed in a quantity of only one, outside the enclosed area.

摘要翻译： 电流传感器包括磁检测元件，包括多个电阻元件的桥接电路和与磁检测元件相邻放置的反馈线圈，并且基于桥式电路的输出产生抵消感应磁场的消除磁场 。 形成桥接电路的布线图案在平面图中看来彼此不相交。 构成桥式电路的各个串联电路的电阻元件只有封闭在构成桥接电路的各个电阻元件的封闭区域中的布线图案相互连接，从布线图案分支的布线图案与 在封闭区域外部仅安装一个。

公开(公告)号：US08270127B2

公开(公告)日：2012-09-18

申请号：US13044493

申请日：2011-03-09

申请人： Yosuke Ide ,  Masamichi Saito ,  Akira Takahashi ,  Masahiro Iizuka ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi

发明人： Yosuke Ide ,  Masamichi Saito ,  Akira Takahashi ,  Masahiro Iizuka ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi

IPC分类号： G11B5/39

CPC分类号： H04B5/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  H01L27/22 ,  H01L43/08

摘要： Magnetoresistive effect elements R1 to R4 are a TMR element or CPP-GMR element. A multilayer film forming the magnetoresistive effect elements is formed to have a width dimension T1 and a length dimension L1 perpendicular to the width dimension T1. The length dimension L1 is longer than the width dimension T1. The width dimension of magnetic field generators of the coil is T2. The multilayer film 31 is positioned within the width dimension T3 of 60% in total of 30% each to the width dimension T2 of the magnetic field generators 3 and 4 of the coil in the direction towards both sides from the center of the width dimension T2 when seen in a plan view.

摘要翻译： 磁阻效应元件R1至R4是TMR元件或CPP-GMR元件。 形成磁阻效应元件的多层膜被形成为具有垂直于宽度尺寸T1的宽度尺寸T1和长度尺寸L1。 长度尺寸L1比宽度尺寸T1长。 线圈的磁场发生器的宽度尺寸为T2。 多层膜31在从宽度尺寸T2的中心朝向两侧的方向上相对于线圈的磁场发生器3和4的宽度尺寸T2总共为30％的宽度尺寸T3的60％的宽度尺寸T3 当在平面图中看到。

公开(公告)号：US08437107B2

公开(公告)日：2013-05-07

申请号：US12754509

申请日：2010-04-05

申请人： Yosuke Ide ,  Masamichi Saito ,  Akira Takahashi ,  Tsuyoshi Nojima ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Kenji Ichinohe ,  Naoki Sakatsume

发明人： Yosuke Ide ,  Masamichi Saito ,  Akira Takahashi ,  Tsuyoshi Nojima ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Kenji Ichinohe ,  Naoki Sakatsume

IPC分类号： G11B5/39

CPC分类号： G01R33/098

摘要： A magnetic coupling type isolator includes: a magnetic field generator for generating an external magnetic field by an input signal; a magnetoresistive element for detecting the external magnetic field and converting the detected magnetic field into an electric signal, the magnetoresistive element being electrically insulated from the magnetic field generator and positioned in a location capable of being magnetically coupled so as to be overlapped with the magnetic field generator as seen in a top plan view; and first and second shield films overlapped with the magnetic field generator and the magnetoresistive element as seen in a top plan view, wherein a distance between the magnetoresistive element and the second shield film is set to 8 to 100 μm.

摘要翻译： 磁耦合型隔离器包括：用于通过输入信号产生外部磁场的磁场发生器; 磁阻元件，用于检测外部磁场并将检测到的磁场转换成电信号，磁阻元件与磁场发生器电绝缘并且位于能够被磁耦合的位置以与磁场重叠 发电机，如俯视图; 以及第一和第二屏蔽膜，如俯视图所示，与磁场发生器和磁阻元件重叠，其中磁阻元件和第二屏蔽膜之间的距离设定为8至100μm。

公开(公告)号：US08222769B2

公开(公告)日：2012-07-17

申请号：US12754529

申请日：2010-04-05

申请人： Yosuke Ide ,  Masamichi Saito ,  Akira Takahashi ,  Tsuyoshi Nojima ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Kenji Ichinohe ,  Naoki Sakatsume

发明人： Yosuke Ide ,  Masamichi Saito ,  Akira Takahashi ,  Tsuyoshi Nojima ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Kenji Ichinohe ,  Naoki Sakatsume

IPC分类号： H04B3/00 ,  H01F27/30 ,  H01L29/82

CPC分类号： G01R33/098

摘要： A magnetic coupling type isolator includes: a magnetic field generator for generating an external magnetic field by an input signal; a magnetoresistive element for detecting the external magnetic field and converting the detected magnetic field into an electric signal, the magnetoresistive element being electrically insulated from the magnetic field generator and positioned in a location capable of being magnetically coupled so as to be overlapped with the magnetic field generator as seen in a top plan view; first and second shield films overlapped with the magnetic field generator and the magnetoresistive element as seen in a top plan view; and a third shield film disposed to surround the magnetoresistive element.

摘要翻译： 磁耦合型隔离器包括：用于通过输入信号产生外部磁场的磁场发生器; 磁阻元件，用于检测外部磁场并将检测到的磁场转换成电信号，磁阻元件与磁场发生器电绝缘并且位于能够被磁耦合的位置以与磁场重叠 发电机，如俯视图; 第一和第二屏蔽膜与磁场发生器和磁阻元件重叠，如俯视图所示; 以及设置成围绕所述磁阻元件的第三屏蔽膜。

公开(公告)号：US20080158738A1

公开(公告)日：2008-07-03

申请号：US11671756

申请日：2007-02-06

申请人： Ryo Nakabayashi ,  Kazumasa Nishimura ,  Yosuke Ide ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Naoya Hasegawa

发明人： Ryo Nakabayashi ,  Kazumasa Nishimura ,  Yosuke Ide ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/08

摘要： A first pinned magnetic sublayer 4a has a multilayered structure including a first insertion subsublayer disposed between a lower ferromagnetic subsublayer and an upper ferromagnetic subsublayer. The first insertion subsublayer has an average thickness exceeding 3 Å and 6 Å or less. This results in an interlayer coupling magnetic field Hin lower than a known art while RA and the rate of resistance change (ΔR/R) substantially identical to those of the known structure are maintained.

摘要翻译： 第一固定磁性子层4a具有多层结构，其包括设置在下铁磁共晶层与上部铁磁层之间的第一插入层。 第一个插入次层具有超过3埃和6埃或更小的平均厚度。 这导致层间耦合磁场Hin低于已知技术，而RA和电阻变化率（DeltaR / R）与已知结构基本相同。

公开(公告)号：US08009391B2

公开(公告)日：2011-08-30

申请号：US12120887

申请日：2008-05-15

申请人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

发明人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.

摘要翻译： 下层由作为非晶磁性材料的Co-Fe-B组成。 因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。 此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。 因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。

公开(公告)号：US07969690B2

公开(公告)日：2011-06-28

申请号：US12042585

申请日：2008-03-05

申请人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3929 ,  H01L43/08

摘要： In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg—O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta is interposed between a lower ferromagnetic sublayer and an upper ferromagnetic sublayer. The nonmagnetic metal sublayer has an average thickness of about 1 Å or more and about 5 Å or less.

摘要翻译： 在隧道磁阻元件中，绝缘阻挡层由Mg-O制成，并且第一被钉扎磁性层具有其中由Ta制成的非磁性金属子层介于下铁磁层和上铁磁层之间的层叠结构。 非磁性金属子层的平均厚度为约1埃以上且约5以下。