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1.发明授权Tunneling magnetic sensing element including free magnetic layer and IrMn protective layer disposed thereon and method for manufacturing the same 有权包括自由磁性层和设置在其上的IrMn保护层的隧道磁感应元件及其制造方法公开(公告)号：US08023233B2
公开(公告)日：2011-09-20
申请号：US11945468
申请日：2007-11-27
申请人： Kazumasa Nishimura , Ryo Nakabayashi , Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
发明人： Kazumasa Nishimura , Ryo Nakabayashi , Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B5/40 , H01F10/3272 , H01F10/3295 , H01F41/302 , H01F41/32 , H01L43/08 , H01L43/12 , Y10T428/31678
摘要： A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of iridium-manganese (IrMn) disposed on the free magnetic layer. Consequently, a high rate of change in resistance is obtained and the magnetostriction of the free magnetic layer is low, compared with a tunneling magnetic sensing element which is not provided with a first protective layer.
摘要翻译： 隧道磁传感元件包括磁化方向被钉在一个方向上的钉扎磁性层，设置在被钉扎的磁性层上的绝缘阻挡层，磁化方向随设置在绝缘屏障上的外部磁场而变化的自由磁性层 以及由配置在自由磁性层上的铱 - 锰（IrMn）构成的第一保护层。 因此，与没有设置第一保护层的隧道式磁感应元件相比，电阻变化率高，自由磁层的磁致伸缩性低。
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2.发明授权公开(公告)号：US07881024B2
公开(公告)日：2011-02-01
申请号：US11622918
申请日：2007-01-12
申请人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Masahiko Ishizone , Takuya Seino , Kazumasa Nishimura , Ryo Nakabayashi
发明人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Masahiko Ishizone , Takuya Seino , Kazumasa Nishimura , Ryo Nakabayashi
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10
摘要： A tunnel-type magnetic detecting element is provided. The tunnel-type magnetic detecting element includes a first ferromagnetic layer; an insulating barrier layer; and a second ferromagnetic layer. The first ferromagnetic layer, the second ferromagnetic layer, or both have a Heusler alloy layer contacting the insulating barrier layer. Equivalent planes represented by {110} surfaces, are preferentially oriented parallel to a film surface in the Heusler alloy layer. The insulating barrier layer is formed of MgO and the equivalent crystal planes represented by the {100} surfaces or the equivalent crystal planes represented by the {110} surfaces are oriented parallel to the film surface.
摘要翻译： 提供隧道式磁检测元件。 隧道式磁检测元件包括第一铁磁层; 绝缘阻挡层; 和第二铁磁层。 第一铁磁层，第二铁磁层或两者具有接触绝缘阻挡层的Heusler合金层。 由{110}表面表示的等效平面优先取向平行于Heusler合金层中的膜表面。 绝缘阻挡层由MgO形成，由{100}表面表示的等效晶面或由{110}表面表示的等效晶面定向平行于膜表面。
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3.发明申请Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon and method for manufacturing tunneling magnetoresistive sensor 有权包括自由磁性层和设置在其上的镁保护层的隧道磁传感器及其制造隧道磁阻传感器的方法公开(公告)号：US20080253038A1
公开(公告)日：2008-10-16
申请号：US11888762
申请日：2007-08-02
申请人： Ryo Nakabayashi , Kazumasa Nishimura , Yosuke Ide , Masahiko Ishizone , Masamichi Saito , Naoya Hasegawa
发明人： Ryo Nakabayashi , Kazumasa Nishimura , Yosuke Ide , Masahiko Ishizone , Masamichi Saito , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/32 , H01L43/08 , H01L43/12
摘要： A tunneling magnetic sensor includes a pinned magnetic layer of which the magnetization is pinned in one direction, an insulating barrier layer, and a free magnetic layer of which the magnetization is varied by an external magnetic field, these layers being arranged in that order from the bottom. A first protective layer made of magnesium (Mg) is disposed on the free magnetic layer. The tunneling magnetic sensor has a larger change in reluctance as compared to conventional magnetic sensors including no first protective layers or including first protective layers made of Al, Ti, Cu, or an Ir—Mn alloy. The free magnetic layer has lower magnetostriction as compared to free magnetic layers included in the conventional magnetic sensors.
摘要翻译： 隧道磁传感器包括磁化被固定在一个方向上的钉扎磁性层，绝缘阻挡层和磁化强度由外部磁场变化的自由磁性层，这些层按照从 底部。 由镁（Mg）制成的第一保护层设置在自由磁性层上。 与不包括第一保护层或包括由Al，Ti，Cu或Ir-Mn合金制成的第一保护层的常规磁传感器相比，隧道磁传感器具有较大的磁阻变化。 与常规磁传感器中包括的自由磁性层相比，自由磁层具有较低的磁致伸缩性。
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4.发明申请公开(公告)号：US20080160326A1
公开(公告)日：2008-07-03
申请号：US11946569
申请日：2007-11-28
申请人： Kazumasa Nishimura , Ryo Nakabayashi , Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
发明人： Kazumasa Nishimura , Ryo Nakabayashi , Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11B5/40 , H01F10/3272 , H01F10/3295 , H01F41/302 , H01F41/32 , H01L43/08 , H01L43/12 , Y10T428/31678
摘要： A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of platinum (Pt) disposed on the free magnetic layer. Consequently, it is possible to greatly decrease the magnetostriction of the free magnetic layer while maintaining a high rate of change in resistance compared with a tunneling magnetic sensing element which is not provided with a first protective layer.
摘要翻译： 隧道磁传感元件包括磁化方向被钉在一个方向上的钉扎磁性层，设置在被钉扎的磁性层上的绝缘阻挡层，磁化方向随设置在绝缘屏障上的外部磁场而变化的自由磁性层 以及由设置在自由磁性层上的铂（Pt）构成的第一保护层。 因此，与没有设置第一保护层的隧道式磁感应元件相比，可以大大降低自由磁性层的磁致伸缩，同时保持高的电阻变化率。
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公开(公告)号：US20080160325A1
公开(公告)日：2008-07-03
申请号：US11945468
申请日：2007-11-27
申请人： Kazumasa Nishimura , Ryo Nakabayashi , Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
发明人： Kazumasa Nishimura , Ryo Nakabayashi , Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B5/40 , H01F10/3272 , H01F10/3295 , H01F41/302 , H01F41/32 , H01L43/08 , H01L43/12 , Y10T428/31678
摘要： A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of iridium-manganese (IrMn) disposed on the free magnetic layer. Consequently, a high rate of change in resistance is obtained and the magnetostriction of the free magnetic layer is low, compared with a tunneling magnetic sensing element which is not provided with a first protective layer.
摘要翻译： 隧道磁传感元件包括磁化方向被钉在一个方向上的钉扎磁性层，设置在被钉扎的磁性层上的绝缘阻挡层，磁化方向随设置在绝缘屏障上的外部磁场而变化的自由磁性层 以及由配置在自由磁性层上的铱 - 锰（IrMn）构成的第一保护层。 因此，与没有设置第一保护层的隧道式磁感应元件相比，电阻变化率高，自由磁层的磁致伸缩性低。
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公开(公告)号：US20060285258A1
公开(公告)日：2006-12-21
申请号：US11421727
申请日：2006-06-01
CPC分类号： G01R33/093 , B82Y10/00 , G11B5/3929 , G11B2005/3996 , H01F1/408 , H01F10/1936 , H01F10/3263 , H01F10/3277 , H01F10/3295
摘要： A magnetic sensing element includes a multilayer film including a pinned magnetic layer in which the magnetization direction is pinned in one direction, a free magnetic layer, and a nonmagnetic layer provided between the pinned magnetic layer and the free magnetic layer. In the magnetic sensing element, at least one of the pinned magnetic layer and the free magnetic layer includes a half-metallic alloy layer and a CoxFe100-x layer is provided between the half-metallic alloy layer and the nonmagnetic layer.
摘要翻译： 磁传感元件包括多层膜，该多层膜包括磁化方向被钉在一个方向上的钉扎磁性层，自由磁性层和设置在被钉扎的磁性层和自由磁性层之间的非磁性层。 在磁感应元件中，被钉扎的磁性层和自由磁性层中的至少一个包括半金属合金层，并且Co x Fe x Fe x Al x O x层是 设置在半金属合金层和非磁性层之间。
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7.发明申请Tunneling magnetic sensing element including Pt sublayer disposed between free magnetic sublayer and enhancing sublayer and method for producing tunneling magnetic sensing element 审中-公开包括设置在自由磁性子层和增强子层之间的Pt子层的隧道磁感应元件以及用于产生隧道磁感应元件的方法公开(公告)号：US20080286612A1
公开(公告)日：2008-11-20
申请号：US11890081
申请日：2007-08-03
申请人： Masahiko Ishizone , Masamichi Saito , Kazumasa Nishimura , Yosuke Ide , Ryo Nakabayashi , Naoya Hasegawa
发明人： Masahiko Ishizone , Masamichi Saito , Kazumasa Nishimura , Yosuke Ide , Ryo Nakabayashi , Naoya Hasegawa
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11C11/16 , H01L43/08 , H01L43/10 , H01L43/12
摘要： There is provided a tunneling magnetic sensing element having an insulating barrier layer composed of Ti—O, a high rate of resistance change (ΔR/R) compared with the known art, and an interlayer coupling magnetic field Hin lower than that in the known art while low RA is maintained and the coercivity of a free magnetic layer is maintained at a low level comparable to the known art; and a method for producing the tunneling magnetic sensing element. An insulating barrier layer is composed of Ti—O. A free magnetic layer is formed on the insulating barrier layer and has a laminated structure of an enhancing sublayer composed of a CoFe alloy, a Pt sublayer, and a soft magnetic sublayer composed of a NiFe alloy, stacked in that order from the bottom.
摘要翻译： 提供了具有由Ti-O组成的绝缘阻挡层，与现有技术相比具有高电阻变化率（DeltaR / R）的隧道磁传感元件和低于现有技术中的层间耦合磁场Hin 同时维持低RA并且自由磁性层的矫顽力保持在与现有技术相当的低水平; 以及用于制造隧道磁传感元件的方法。 绝缘阻挡层由Ti-O组成。 在绝缘阻挡层上形成自由磁性层，并且具有从底部依次堆叠的由CoFe合金，Pt子层和由NiFe合金构成的软磁性亚层构成的增强层的叠层结构。
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8.发明申请公开(公告)号：US20070171579A1
公开(公告)日：2007-07-26
申请号：US11625147
申请日：2007-01-19
申请人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Masahiko Ishizone , Takuya Seino , Ryo Nakabayashi , Kazumasa Nishimura
发明人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Masahiko Ishizone , Takuya Seino , Ryo Nakabayashi , Kazumasa Nishimura
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G01R33/098 , H01L43/08
摘要： Described herein is a tunnel type magnetic detection element and a manufacturing method thereof. In the tunnel type magnetic detection element, an enhance layer included in a free magnetic layer disposed on an insulating barrier layer contacts the insulating barrier layer, which may be made of an oxide such as titanium oxide. Under the insulating barrier layer, a second pinned magnetic layer constituting a pinned magnetic layer is formed. The second pinned magnetic layer has a fcc structure in which crystal planes equivalent to a (111) plane are aligned parallel to a layer surface, and the insulating barrier layer is formed to have a rutile structure or the like. The enhance layer is formed to have a bcc structure in which crystal planes equivalent to a (110) plane are aligned parallel to a layer surface.
摘要翻译： 这里描述的是隧道式磁检测元件及其制造方法。 在隧道式磁检测元件中，包括在设置在绝缘阻挡层上的自由磁性层中的增强层与绝缘阻挡层接触，绝缘阻挡层可以由诸如氧化钛的氧化物制成。 在绝缘阻挡层下面，形成构成被钉扎磁性层的第二钉扎磁性层。 第二钉扎磁性层具有fcc结构，其中等同于（111）面的晶面平行于层表面排列，并且绝缘阻挡层形成为具有金红石结构等。 增强层形成为具有bcc结构，其中等同于（110）面的晶面平行于层表面排列。
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9.发明申请公开(公告)号：US20070165337A1
公开(公告)日：2007-07-19
申请号：US11622918
申请日：2007-01-12
申请人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Masahiko Ishizone , Takuya Seino , Kazumasa Nishimura , Ryo Nakabayashi
发明人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Masahiko Ishizone , Takuya Seino , Kazumasa Nishimura , Ryo Nakabayashi
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10
摘要： A tunnel-type magnetic detecting element is provided. The tunnel-type magnetic detecting element includes a first ferromagnetic layer; an insulating barrier layer; and a second ferromagnetic layer. The first ferromagnetic layer, the second ferromagnetic layer, or both have a Heusler alloy layer contacting the insulating barrier layer. Equivalent planes represented by {110} surfaces, are preferentially oriented parallel to a film surface in the Heusler alloy layer. The insulating barrier layer is formed of MgO and the equivalent crystal planes represented by the {100} surfaces or the equivalent crystal planes represented by the {110} surfaces are oriented parallel to the film surface.
摘要翻译： 提供隧道式磁检测元件。 隧道式磁检测元件包括第一铁磁层; 绝缘阻挡层; 和第二铁磁层。 第一铁磁层，第二铁磁层或两者具有接触绝缘阻挡层的Heusler合金层。 由{110}表面表示的等效平面优先取向平行于Heusler合金层中的膜表面。 绝缘阻挡层由MgO形成，由{100}表面表示的等效晶面或由{110}表面表示的等效晶面定向平行于膜表面。
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10.发明授权Tunneling magnetic detecting element having insulation barrier layer and method for making the same 有权具有绝缘阻挡层的隧道磁检测元件及其制造方法公开(公告)号：US07961442B2
公开(公告)日：2011-06-14
申请号：US11947315
申请日：2007-11-29
申请人： Kazumasa Nishimura , Ryo Nakabayashi , Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
发明人： Kazumasa Nishimura , Ryo Nakabayashi , Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y25/00 , B82Y40/00 , G01R33/0005 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12 , Y10T428/31678
摘要： A tunneling magnetic detecting element includes an insulating barrier layer having a layered structure including a Ti—O sublayer and a Ta—O sublayer. The Ta concentration in the insulating barrier layer is set to be more than 0 at % but not more than about 7 at % with respect to a total of 100 at % of Ti and Ta constituting the insulating barrier layer.
摘要翻译： 隧道磁检测元件包括具有包括Ti-O子层和Ta-O子层的层状结构的绝缘阻挡层。 绝缘阻挡层中的Ta浓度相对于构成绝缘阻挡层的Ti和Ta的总和为100at％，设定为大于0at％但不大于约7at％。
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