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1.发明授权公开(公告)号：US07122402B2
公开(公告)日：2006-10-17
申请号：US10781794
申请日：2004-02-20
申请人： Youhei Nagahama , Katsunori Wako , Yuichi Asano , Masanori Takahashi , Haruo Kojima , Masamichi Fujimoto , Hiroshi Ohtsubo , Yuki Yasuda
发明人： Youhei Nagahama , Katsunori Wako , Yuichi Asano , Masanori Takahashi , Haruo Kojima , Masamichi Fujimoto , Hiroshi Ohtsubo , Yuki Yasuda
CPC分类号： H01L21/565 , H01L2924/0002 , H01L2924/00
摘要： In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.
摘要翻译： 在制造本发明的半导体器件的方法中，在树脂封装时，在衬底的表面上支撑一个或多个半导体元件并被夹持在封装模具的上模具和下模具之间的刚性衬底是 使得与封装模具的通气端相对应的衬底的通气端边缘部分的厚度小于衬底的其它部分的厚度。 将基板设置在封装模具中，并将树脂注入到上模和基板之间的空腔中，以用树脂封装半导体元件。
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公开(公告)号：US20050070051A1
公开(公告)日：2005-03-31
申请号：US10781794
申请日：2004-02-20
申请人： Youhei Nagahama , Katsunori Wako , Yuichi Asano , Masanori Takahashi , Haruo Kojima , Masamichi Fujimoto , Hiroshi Ohtsubo , Yuki Yasuda
发明人： Youhei Nagahama , Katsunori Wako , Yuichi Asano , Masanori Takahashi , Haruo Kojima , Masamichi Fujimoto , Hiroshi Ohtsubo , Yuki Yasuda
CPC分类号： H01L21/565 , H01L2924/0002 , H01L2924/00
摘要： In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.
摘要翻译： 在制造本发明的半导体器件的方法中，在树脂封装时，在衬底的表面上支撑一个或多个半导体元件并被夹持在封装模具的上模具和下模具之间的刚性衬底是 使得与封装模具的通气端相对应的衬底的通气端边缘部分的厚度小于衬底的其它部分的厚度。 将基板设置在封装模具中，并将树脂注入到上模和基板之间的空腔中，以用树脂封装半导体元件。
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公开(公告)号：US07781259B2
公开(公告)日：2010-08-24
申请号：US11516584
申请日：2006-09-07
申请人： Youhei Nagahama , Katsunori Wako , Yuichi Asano , Masanori Takahashi , Haruo Kojima , Masamichi Fujimoto , Hiroshi Ohtsubo , Yuki Yasuda
发明人： Youhei Nagahama , Katsunori Wako , Yuichi Asano , Masanori Takahashi , Haruo Kojima , Masamichi Fujimoto , Hiroshi Ohtsubo , Yuki Yasuda
CPC分类号： H01L21/565 , H01L2924/0002 , H01L2924/00
摘要： In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.
摘要翻译： 在制造本发明的半导体器件的方法中，在树脂封装时，在衬底的表面上支撑一个或多个半导体元件并被夹持在封装模具的上模具和下模具之间的刚性衬底是 使得与封装模具的通气端相对应的基板的通气端边缘部分的厚度小于基板的其它部分的厚度。 将基板设置在封装模具中，并将树脂注入到上模和基板之间的空腔中，以用树脂封装半导体元件。
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公开(公告)号：US20070010046A1
公开(公告)日：2007-01-11
申请号：US11516584
申请日：2006-09-07
申请人： Youhei Nagahama , Katsunori Wako , Yuichi Asano , Masanori Takahashi , Haruo Kojima , Masamichi Fujimoto , Hiroshi Ohtsubo , Yuki Yasuda
发明人： Youhei Nagahama , Katsunori Wako , Yuichi Asano , Masanori Takahashi , Haruo Kojima , Masamichi Fujimoto , Hiroshi Ohtsubo , Yuki Yasuda
IPC分类号： H01L21/00
CPC分类号： H01L21/565 , H01L2924/0002 , H01L2924/00
摘要： In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.
摘要翻译： 在制造本发明的半导体器件的方法中，在树脂封装时，在衬底的表面上支撑一个或多个半导体元件并被夹持在封装模具的上模具和下模具之间的刚性衬底是 使得与封装模具的通气端相对应的衬底的通气端边缘部分的厚度小于衬底的其它部分的厚度。 将基板设置在封装模具中，并将树脂注入到上模和基板之间的空腔中，以用树脂封装半导体元件。
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公开(公告)号：US07436353B2
公开(公告)日：2008-10-14
申请号：US11509765
申请日：2006-08-25
申请人： Haruo Kojima
发明人： Haruo Kojima
CPC分类号： G01S7/034
摘要： A transmitting-receiving module of a radar system which is an embodiment of the present invention, includes, a transmitting circuit for sending transmitting RF signal, a three terminal circulator having three terminals and with the first terminal of which is connected a transmitting-receiving antenna, a first RF switch which is connected with the second terminal of the three terminal circulator and the output can be switched over, a second RF switch with input which can be switched over, an attenuator connected between the first RF switch and the second switch, and a receiving circuit connected with the output terminal of the second RF switch, when radar signal is being transmitted, the first RF switch is connected with the attenuator, and the second RF switch is not connected with the attenuator, when radar signal is being received, the first RF switch is connected with the second RF switch directly or connected through a low noise amplifier.
摘要翻译： 作为本发明的实施例的雷达系统的发送接收模块包括：发送发送RF信号的发送电路，具有三个终端的三端环行器，其第一端连接有发送接收天线 可以将与三端环行器的第二端连接的第一RF开关和输出切换，具有能切换的输入的第二RF开关，连接在第一RF开关和第二开关之间的衰减器， 以及与所述第二RF开关的输出端子连接的接收电路，当正在发送雷达信号时，当接收到雷达信号时，所述第一RF开关与所述衰减器连接，并且所述第二RF开关不与所述衰减器连接 ，第一RF开关直接与第二RF开关连接或通过低噪声放大器连接。
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公开(公告)号：US07009462B2
公开(公告)日：2006-03-07
申请号：US10785064
申请日：2004-02-25
申请人： Haruo Kojima
发明人： Haruo Kojima
IPC分类号： H01P1/22
CPC分类号： H01P1/227
摘要： A limiter circuit comprises a quarter-wave transmission line, a first limiter element, a first DC return element, a second limiter element and a second DC return element. The quarter-wave transmission line, which has a predetermined characteristic impedance, comprises a signal line conductor and a common line conductor. The first limiter element is connected through a termination between the signal line conductor and the common line conductor at one side of the transmission line. The first DC return element is connected in parallel with the first limiter element. The second limiter element is connected between the signal line conductor and the common line conductor at another side of the transmission line. The second DC return element is connected to in parallel with the second limiter element.
摘要翻译： 限幅器电路包括四分之一波长传输线，第一限幅元件，第一直流返回元件，第二限幅元件和第二直流返回元件。 具有预定特性阻抗的四分之一波长传输线包括信号线导体和公共线导体。 第一限幅器元件通过信号线导体和传输线一侧的公共线路导体之间的端接连接。 第一直流返回元件与第一限幅元件并联连接。 第二限制器元件连接在信号线导体和传输线另一侧的公共线路导体之间。 第二直流返回元件与第二限幅元件并联连接。
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公开(公告)号：US4278865A
公开(公告)日：1981-07-14
申请号：US30467
申请日：1979-04-16
申请人： Hiroyuki Watanabe , Eiji Miyoshi , Haruo Kojima , Takeshi Yoshida , Masaaki Kato , Shizuo Miyazaki
发明人： Hiroyuki Watanabe , Eiji Miyoshi , Haruo Kojima , Takeshi Yoshida , Masaaki Kato , Shizuo Miyazaki
IPC分类号： B23K9/20
CPC分类号： B23K9/201
摘要： A stud welding method uses an inert mixed gas as arc shield in performing stud welding on a base metal, such as, vehicle body, by utilizing the stud, e.g. a T-stud, as an electrode, the stud serving as the positive pole while the base metal serves as the negative pole to thereby prevent formation of oxide film on the base metal surface during the welding, the inert mixed gas comprising carbon dioxide gas and argon gas.
摘要翻译： 螺柱焊接方法使用惰性混合气体作为电弧屏蔽，通过利用螺柱（例如，螺柱）来执行诸如车身等基础金属的螺柱焊接。 作为电极的T形螺柱，作为正极的螺柱，而基体金属作为负极，从而防止在焊接时在基体金属表面上形成氧化膜，惰性混合气体包括二氧化碳气体和 氩气。
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公开(公告)号：US08581664B2
公开(公告)日：2013-11-12
申请号：US13331492
申请日：2011-12-20
申请人： Haruo Kojima
发明人： Haruo Kojima
CPC分类号： H03F3/72 , H03F2200/405 , H03F2203/7227
摘要： A pulse electric power amplification apparatus includes first, second, final-stage and drive amplification devices. In initial stage, the first device in upstream, having a predetermined thermal time constant, receives a high frequency signal while the second device in downstream, having a different thermal time constant, is cascade-connected to it. In final stage, the drive device drives the final-stage device in downstream, which is cascade-connected to the second device. The apparatus further includes a power supply switching circuit, first and second differentiating circuits. The first and second differentiating circuits, having time constants corresponding to thermal time constants of the first and second devices, respectively, receive a pulse signal with which the high frequency signal is modulated. The power supply switching circuit, also receiving the pulse signal, switches a voltage outputted from a positive bias power supply and inputs the switched voltage to the first, second, drive and final-stage devices.
摘要翻译： 脉冲电力放大装置包括第一，第二，末级和驱动放大装置。 在初始阶段，具有预定的热时间常数的上游的第一设备接收高频信号，而具有不同热时间常数的下游的第二设备与其级联连接。 在最后阶段，驱动装置驱动下游的最后级装置，该下级装置级联连接到第二装置。 该装置还包括电源开关电路，第一和第二微分电路。 具有分别对应于第一和第二装置的热时间常数的时间常数的第一和第二微分电路接收高频信号被调制的脉冲信号。 也接收脉冲信号的电源开关电路切换从正偏置电源输出的电压，并将切换的电压输入到第一，第二驱动和最后级装置。
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公开(公告)号：US20070115170A1
公开(公告)日：2007-05-24
申请号：US11509765
申请日：2006-08-25
申请人： Haruo Kojima
发明人： Haruo Kojima
CPC分类号： G01S7/034
摘要： A transmitting-receiving module of a radar system which is an embodiment of the present invention, includes, a transmitting circuit for sending transmitting RF signal, a three terminal circulator having three terminals and with the first terminal of which is connected a transmitting-receiving antenna, a first RF switch which is connected with the second terminal of the three terminal circulator and the output can be switched over, a second RF switch with input which can be switched over, an attenuator connected between the first RF switch and the second switch, and a receiving circuit connected with the output terminal of the second RF switch, when radar signal is being transmitted, the first RF switch is connected with the attenuator, and the second RF switch is not connected with the attenuator, when radar signal is being received, the first RF switch is connected with the second RF switch directly or connected through a low noise amplifier.
摘要翻译： 作为本发明的实施例的雷达系统的发送接收模块包括：发送发送RF信号的发送电路，具有三个终端的三端环行器，其第一端连接有发送接收天线 可以将与三端环行器的第二端连接的第一RF开关和输出切换，具有能切换的输入的第二RF开关，连接在第一RF开关和第二开关之间的衰减器， 以及与所述第二RF开关的输出端子连接的接收电路，当正在发送雷达信号时，当接收到雷达信号时，所述第一RF开关与所述衰减器连接，并且所述第二RF开关不与所述衰减器连接 ，第一RF开关直接与第二RF开关连接或通过低噪声放大器连接。
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公开(公告)号：US20050024159A1
公开(公告)日：2005-02-03
申请号：US10785064
申请日：2004-02-25
申请人： Haruo Kojima
发明人： Haruo Kojima
CPC分类号： H01P1/227
摘要： A limiter circuit comprises a quarter-wave transmission line, a first limiter element, a first DC return element, a second limiter element and a second DC return element. The quarter-wave transmission line, which has a predetermined characteristic impedance, comprises a signal line conductor and a common line conductor. The first limiter element is connected through a termination between the signal line conductor and the common line conductor at one side of the transmission line. The first DC return element is connected in parallel with the first limiter element. The second limiter element is connected between the signal line conductor and the common line conductor at another side of the transmission line. The second DC return element is connected to in parallel with the second limiter element.
摘要翻译： 限幅器电路包括四分之一波长传输线，第一限幅器元件，第一直流返回元件，第二限幅元件和第二直流返回元件。 具有预定特性阻抗的四分之一波长传输线包括信号线导体和公共线导体。 第一限幅器元件通过信号线导体和传输线一侧的公共线路导体之间的端接连接。 第一直流返回元件与第一限幅元件并联连接。 第二限制器元件连接在信号线导体和传输线另一侧的公共线路导体之间。 第二直流返回元件与第二限幅元件并联连接。
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