公开(公告)号：US20080284762A1

公开(公告)日：2008-11-20

申请号：US12148756

申请日：2008-04-22

Applicant: Youji Sakioka ,  Eiji Makino

Inventor： Youji Sakioka ,  Eiji Makino

IPC: G09G5/00

CPC classification number: H04N5/376

Abstract: Disclosed herein is a driving apparatus for driving a pixel, including a first pMOS type transistor connected to a first potential a first nMOS type transistor connected in series to the first pMOS type transistor and connected to a second potential; and a control section configured to control the first pMOS type transistor and the first nMOS type transistor individually using a first on-signal for controlling the timing of turning on of one of the first pMOS type transistor and the first nMOS type transistor; a signal of a potential at a node between the first pMOS type transistor and the first nMOS type transistor being inputted as a driving signal for driving the pixel to the pixel.

Abstract translation: 本文公开了一种用于驱动像素的驱动装置，包括连接到第一电位的第一pMOS型晶体管与第一pMOS型晶体管串联连接到第二电位的第一nMOS型晶体管; 以及控制部，被配置为使用用于控制所述第一pMOS型晶体管和所述第一nMOS型晶体管中的一个的导通的定时的第一导通信号分别控制所述第一pMOS型晶体管和所述第一nMOS型晶体管; 在第一pMOS型晶体管和第一nMOS型晶体管之间的节点处的电位的信号被输入作为用于将像素驱动到像素的驱动信号。

公开(公告)号：US08416222B2

公开(公告)日：2013-04-09

申请号：US12148756

申请日：2008-04-22

Applicant: Youji Sakioka ,  Eiji Makino

Inventor： Youji Sakioka ,  Eiji Makino

IPC: G06F3/038

CPC classification number: H04N5/376

Abstract: Disclosed herein is a driving apparatus for driving a pixel, including a first pMOS type transistor connected to a first potential a first nMOS type transistor connected in series to the first pMOS type transistor and connected to a second potential; and a control section configured to control the first pMOS type transistor and the first nMOS type transistor individually using a first on-signal for controlling the timing of turning on of one of the first pMOS type transistor and the first nMOS type transistor; a signal of a potential at a node between the first pMOS type transistor and the first nMOS type transistor being inputted as a driving signal for driving the pixel to the pixel.

Abstract translation: 本文公开了一种用于驱动像素的驱动装置，包括连接到第一电位的第一pMOS型晶体管与第一pMOS型晶体管串联连接到第二电位的第一nMOS型晶体管; 以及控制部，被配置为使用用于控制所述第一pMOS型晶体管和所述第一nMOS型晶体管中的一个的导通的定时的第一导通信号分别控制所述第一pMOS型晶体管和所述第一nMOS型晶体管; 在第一pMOS型晶体管和第一nMOS型晶体管之间的节点处的电位的信号被输入作为用于将像素驱动到像素的驱动信号。

公开(公告)号：US08970753B2

公开(公告)日：2015-03-03

申请号：US13067594

申请日：2011-06-13

Applicant: Eiji Makino ,  Tetsuji Nakaseko ,  Ryoji Eki ,  Youji Sakioka

Inventor： Eiji Makino ,  Tetsuji Nakaseko ,  Ryoji Eki ,  Youji Sakioka

IPC: H04N3/14 ,  H04N5/335 ,  H04N5/359 ,  H04N5/347 ,  H04N5/374 ,  H04N5/376 ,  H04N5/355 ,  H01L27/148

CPC classification number: H04N5/3591 ,  H04N5/347 ,  H04N5/353 ,  H04N5/35509 ,  H04N5/374 ,  H04N5/376

Abstract: A solid-state imaging device includes: a pixel section wherein pixels including photoelectric conversion devices are arranged in a matrix; and a pixel driving section including a row selection circuit which controls the pixels to perform an electronic shutter operation and readout of the pixel section. The row selection circuit has a function of selecting a readout row from which a signal is read out and a shutter row on which reset is performed by discharging charge accumulated in the photoelectric conversion devices, in accordance with address and control signals. The row selection circuit can set, in accordance with the address and control signals, in the pixels of the selected row, at least a readout state, a discharge state where a smaller amount of the charge accumulated in the photoelectric conversion devices than the reset is discharged, an electronic shutter state, and a charge state where the charge is accumulated in the photoelectric conversion devices.

Abstract translation: 固态成像装置包括：像素部，其中包括光电转换装置的像素排列成矩阵; 以及像素驱动部，包括控制像素进行电子快门操作和像素部的读出的行选择电路。 行选择电路具有根据地址和控制信号选择从其读出信号的读出行和通过对累积在光电转换装置中的电荷进行放电来执行复位的快门行的功能。 行选择电路可以根据地址和控制信号在所选择的行的像素中设置至少读出状态，其中积累在光电转换装置中比复位更少的电荷量的放电状态为 放电，电子快门状态以及电荷积聚在光电转换装置中的充电状态。

公开(公告)号：US20080284250A1

公开(公告)日：2008-11-20

申请号：US12082874

申请日：2008-04-15

Applicant: Eiji Makino ,  Youji Sakioka ,  Shizunori Matsumoto

Inventor： Eiji Makino ,  Youji Sakioka ,  Shizunori Matsumoto

IPC: H02J1/00

CPC classification number: H02J4/00 ,  G03B7/26 ,  H01L27/14609 ,  H04N3/1568 ,  H04N5/335 ,  H04N5/3597 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3741 ,  Y10T307/696 ,  Y10T307/76 ,  Y10T307/858 ,  Y10T307/865

Abstract: A power supply device that switches one of a first power supply, a second power supply, and a third power supply, all of which supply power to an auxiliary device, to a transfer gate in a CMOS image sensor having a photodiode and outputs the corresponding power to the transfer gate is disclosed. The device includes: a first transistor driven by the second power supply and outputting power of the second power supply to the transfer gate; a second transistor driven by the second power supply and outputting power of the first power supply to the transfer gate; a third transistor driven by the third power supply and outputting power of the third power supply to the transfer gate; and a fourth transistor located before the second transistor, driven by the first power supply, and outputting power of the first power supply to a source of the second transistor.

Abstract translation: 一种电源装置，其将所有向辅助装置供电的第一电源，第二电源和第三电源之一切换到具有光电二极管的CMOS图像传感器中的传送门，并输出相应的 公开了传输门的电源。 该装置包括：由第二电源驱动的第一晶体管，并将第二电源的功率输出到传输门; 由所述第二电源驱动的第二晶体管，并将所述第一电源的功率输出到所述传输门; 由所述第三电源驱动的第三晶体管，并将所述第三电源的功率输出到所述传输门; 以及位于第二晶体管之前的第四晶体管，由第一电源驱动，并将第一电源的功率输出到第二晶体管的源极。

公开(公告)号：US08716895B2

公开(公告)日：2014-05-06

申请号：US12082874

申请日：2008-04-15

Applicant: Eiji Makino ,  Youji Sakioka ,  Shizunori Matsumoto

Inventor： Eiji Makino ,  Youji Sakioka ,  Shizunori Matsumoto

IPC: H02J1/00

CPC classification number: H02J4/00 ,  G03B7/26 ,  H01L27/14609 ,  H04N3/1568 ,  H04N5/335 ,  H04N5/3597 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3741 ,  Y10T307/696 ,  Y10T307/76 ,  Y10T307/858 ,  Y10T307/865

Abstract: A power supply device that switches one of a first power supply, a second power supply, and a third power supply, all of which supply power to an auxiliary device, to a transfer gate in a CMOS image sensor having a photodiode and outputs the corresponding power to the transfer gate is disclosed. The device includes: a first transistor driven by the second power supply and outputting power of the second power supply to the transfer gate; a second transistor driven by the second power supply and outputting power of the first power supply to the transfer gate; a third transistor driven by the third power supply and outputting power of the third power supply to the transfer gate; and a fourth transistor located before the second transistor, driven by the first power supply, and outputting power of the first power supply to a source of the second transistor.

Abstract translation: 一种电源装置，其将所有向辅助装置供电的第一电源，第二电源和第三电源之一切换到具有光电二极管的CMOS图像传感器中的传送门，并输出相应的 公开了传输门的电源。 该装置包括：由第二电源驱动的第一晶体管，并将第二电源的功率输出到传输门; 由所述第二电源驱动的第二晶体管，并将所述第一电源的功率输出到所述传输门; 由所述第三电源驱动的第三晶体管，并将所述第三电源的功率输出到所述传输门; 以及位于第二晶体管之前的第四晶体管，由第一电源驱动，并将第一电源的功率输出到第二晶体管的源极。

公开(公告)号：US20120008027A1

公开(公告)日：2012-01-12

申请号：US13067594

申请日：2011-06-13

Applicant: Eiji Makino ,  Tetsuji Nakaseko ,  Ryoji Eki ,  Youji Sakioka

Inventor： Eiji Makino ,  Tetsuji Nakaseko ,  Ryoji Eki ,  Youji Sakioka

IPC: H04N5/335

CPC classification number: H04N5/3591 ,  H04N5/347 ,  H04N5/353 ,  H04N5/35509 ,  H04N5/374 ,  H04N5/376

Abstract: A solid-state imaging device includes: a pixel section wherein pixels including photoelectric conversion devices are arranged in a matrix; and a pixel driving section including a row selection circuit which controls the pixels to perform an electronic shutter operation and readout of the pixel section. The row selection circuit has a function of selecting a readout row from which a signal is read out and a shutter row on which reset is performed by discharging charge accumulated in the photoelectric conversion devices, in accordance with address and control signals. The row selection circuit can set, in accordance with the address and control signals, in the pixels of the selected row, at least a readout state, a discharge state where a smaller amount of the charge accumulated in the photoelectric conversion devices than the reset is discharged, an electronic shutter state, and a charge state where the charge is accumulated in the photoelectric conversion devices.

Abstract translation: 固态成像装置包括：像素部，其中包括光电转换装置的像素排列成矩阵; 以及像素驱动部，包括控制像素进行电子快门操作和像素部的读出的行选择电路。 行选择电路具有根据地址和控制信号选择从其读出信号的读出行和通过对累积在光电转换装置中的电荷进行放电来执行复位的快门行的功能。 行选择电路可以根据地址和控制信号在所选择的行的像素中设置至少读出状态，其中积累在光电转换装置中比复位更少的电荷量的放电状态为 放电，电子快门状态以及电荷积聚在光电转换装置中的充电状态。

公开(公告)号：US20120199724A1

公开(公告)日：2012-08-09

申请号：US13359151

申请日：2012-01-26

Applicant: Shinya Nomura ,  Yoshiaki Urakawa ,  Youji Sakioka

Inventor： Shinya Nomura ,  Yoshiaki Urakawa ,  Youji Sakioka

IPC: H01L27/146

CPC classification number: H04N5/3698 ,  H04N5/3454 ,  H04N5/3745 ,  H04N5/37455 ,  H04N5/376 ,  H04N5/378

Abstract: A semiconductor device includes: an element array portion in which unit elements are disposed in a matrix; and a signal processing portion including a signal processing circuit executing predetermined signal processing based on unit signals outputted from the circuit elements, respectively, every column, in which a function of the signal processing circuit is controlled in such a way that power consumption of the signal processing circuit concerned corresponding to the unit elements each not required becomes lower in a phase of an element selection mode in which only information on a part of the unit pixels for one row in the element array portion is required than in a phase of a normal operation mode.

Abstract translation: 半导体器件包括：元件阵列部分，其中单元元件设置在矩阵中; 以及信号处理部分，其包括信号处理电路，分别基于从电路元件输出的每个列执行预定信号处理，其中信号处理电路的功能被控制为使得信号的功率消耗 相对于不需要的单元的各个处理电路在元件选择模式的相位中变得较低，其中仅需要元件阵列部分中的一行的单位像素的一部分的信息，而不是正常操作的相位 模式。

公开(公告)号：US08953074B2

公开(公告)日：2015-02-10

申请号：US13359151

申请日：2012-01-26

Applicant: Shinya Nomura ,  Yoshiaki Urakawa ,  Youji Sakioka

Inventor： Shinya Nomura ,  Yoshiaki Urakawa ,  Youji Sakioka

IPC: H04N5/335 ,  H04N5/378 ,  H04N5/345 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/376

CPC classification number: H04N5/3698 ,  H04N5/3454 ,  H04N5/3745 ,  H04N5/37455 ,  H04N5/376 ,  H04N5/378

Abstract: A semiconductor device includes: an element array portion in which unit elements are disposed in a matrix; and a signal processing portion including a signal processing circuit executing predetermined signal processing based on unit signals outputted from the circuit elements, respectively, every column, in which a function of the signal processing circuit is controlled in such a way that power consumption of the signal processing circuit concerned corresponding to the unit elements each not required becomes lower in a phase of an element selection mode in which only information on a part of the unit pixels for one row in the element array portion is required than in a phase of a normal operation mode.

Abstract translation: 半导体器件包括：元件阵列部分，其中单元元件设置在矩阵中; 以及信号处理部分，其包括信号处理电路，分别基于从电路元件输出的每个列执行预定信号处理，其中信号处理电路的功能被控制为使得信号的功率消耗 相对于不需要的单元的各个处理电路在元件选择模式的相位中变得较低，其中仅需要元件阵列部分中的一行的单位像素的一部分的信息，而不是正常操作的相位 模式。