公开(公告)号：US5034200A

公开(公告)日：1991-07-23

申请号：US449405

申请日：1989-12-19

申请人： Youji Yamashita ,  Masakatu Kojima

发明人： Youji Yamashita ,  Masakatu Kojima

IPC分类号： H01L21/208 ,  C30B15/04 ,  C30B15/10 ,  C30B15/12

CPC分类号： C30B15/12 ,  Y10S117/90 ,  Y10T117/1052

摘要： A crystal pulling apparatus of double structure crucible has a crucible body which is divided into inner and outer chambers by a cylindrical partition wall coaxially disposed in the crucible body. A melt supplying path used to supply melt from the outer chamber of the crucible to the inner chamber in which the crystal is pulled is formed of a small through hole formed in the partition wall or the small through hole and a pipe-like passage formed in communication with small through hole. The radius of the inner chamber of the double structure crucible has a specified relation determined by the segregation coefficient of dopant impurity with respect to the radius of the outer chamber. This is, the radius of the inner chamber is set substantially equal to .sqroot.k times the radius of the outer chamber when the segregation coefficient of the dopant impurity is k. In the crystal pulling apparatus with the double structure crucible, a small chamber for introducing dopant is disposed in the outer chamber of the crucible to be in communication with the inner chamber.

摘要翻译： 双结构坩埚的晶体拉制装置具有坩埚体，其通过同轴地设置在坩埚主体中的圆筒形分隔壁分成内室和外室。 用于将熔融物从坩埚的外部供给到被拉出晶体的内部的熔融物供给路径由形成在隔壁或小通孔中的小通孔形成，并且形成在管状通道中 与小通孔沟通。 双结构坩埚的内腔的半径具有由掺杂剂杂质的偏析系数相对于外室的半径确定的规定关系。 也就是说，当掺杂剂杂质的偏析系数为k时，内室的半径被设定为基本上等于外室半径的2ROOT k倍。 在具有双结构坩埚的晶体拉制装置中，用于引入掺杂剂的小室设置在坩埚的外室中以与内室连通。

公开(公告)号：US5073229A

公开(公告)日：1991-12-17

申请号：US545098

申请日：1990-06-29

申请人： Youji Yamashita ,  Masakatu Kojima

发明人： Youji Yamashita ,  Masakatu Kojima

IPC分类号： C30B15/02 ,  C30B15/04 ,  C30B15/10 ,  C30B15/12 ,  H01L21/208

CPC分类号： C30B15/04 ,  C30B15/12 ,  Y10S117/90

摘要： A crystal pulling method includes the steps of disposing a separation wall concentrically with an in a semiconductor crystal pulling crucible to divide the crucible into an inner chamber and an outer chamber, putting first doped material melt into the inner chamber and second material melt into the outer chamber, and pulling crystal from the first material melt in the inner chamber while the second material melt in the outer chamber is being supplied to the inner chamber via a coupling member which connects the inner and outer chamber with each other but suppresses the outflow of impurity from the inner chamber to the outer chamber. Assume that k is the segregation coefficient of doping impurity in the first material melt, r is half the inner diameter of the inner chamber, and R is half the inner diameter of the outer chamber. The second material melt in the outer chamber is undoped melt, and the condition of (r/R)>.sqroot.k is set to increase the doping impurity concentration in the longitudinal direction of the crystal, or the condition of (r/R)

公开(公告)号：US5021225A

公开(公告)日：1991-06-04

申请号：US312847

申请日：1989-02-21

申请人： Youji Yamashita ,  Masakatu Kojima

发明人： Youji Yamashita ,  Masakatu Kojima

IPC分类号： C30B15/10 ,  C30B15/12 ,  H01L21/208

CPC分类号： C30B15/12 ,  Y10T117/1052

摘要： In a crystal pulling process using an integral type double crucible, a cylindrical separation wall is mounted in and is coaxial with a crucible, for receiving semiconductor material melt to divide the crucible into inner and outer chambers. A coupling tube fixed at the side wall of the separation wall and having a pipe-like passage with a small hole is provided to make a pass between the inner and outer chambers. While material melt in the outer chamber is being supplied to the inner chamber via the coupling tube, crystal is pulled from the melt received in the inner chamber and having an impurity composition different from that of the melt in the outer chamber.

公开(公告)号：US4894206A

公开(公告)日：1990-01-16

申请号：US91947

申请日：1987-09-01

申请人： Youji Yamashita ,  Masakatu Kojima ,  Yoshiaki Matsushita ,  Masanobu Ogino

发明人： Youji Yamashita ,  Masakatu Kojima ,  Yoshiaki Matsushita ,  Masanobu Ogino

IPC分类号： C30B15/12 ,  H01L21/18

CPC分类号： C30B15/12 ,  Y10S117/90 ,  Y10T117/1052

摘要： The present invention discloses a crystal pulling apparatus having a double-crucible structure, wherein an inner crucible is located in an outer crucible. An end of a pipe-like passage is located in a through hole formed in a side wall of an inner crucible located in an outer crucible, and a melt is supplied from the outer crucible to the inner crucible through the pipe-like passage, during crystal pulling. During melting or neckdown, prior to crystal pulling, diffusion of an impurity between the melts in the outer crucible and the inner crucible, and exchange of the melts between the outer crucible and the inner crucible are prevented by the pipe-like passage.

摘要翻译： 本发明公开了一种具有双坩埚结构的晶体拉制装置，其中内坩埚位于外坩埚中。 管状通道的端部位于形成在位于外坩埚内坩埚的侧壁中的通孔中，熔融物通过管状通道从外坩埚供应到内坩埚中 水晶拉。 在熔融或颈缩期间，在晶体拉伸之前，通过管状通道来防止杂质在外坩埚和内坩埚之间的熔体的扩散以及外坩埚和内坩埚之间的熔体的交换。

公开(公告)号：US5515810A

公开(公告)日：1996-05-14

申请号：US407958

申请日：1995-03-22

申请人： Youji Yamashita

发明人： Youji Yamashita

IPC分类号： C30B15/14 ,  C30B15/00 ,  C30B27/02 ,  C30B29/42 ,  C30B35/00 ,  C30B15/12

CPC分类号： C30B15/00 ,  C30B29/42 ,  Y10T117/1052

摘要： To manufacture a low-carbon concentration GaAs wafer required for devices such as hall sensors, FETs, HEMTs etc. at a high production yield without deteriorating the semi-insulation characteristics thereof, a method of manufacturing a semi-insulation GaAs monocrystal by controlling carbon concentration during crystal growth by a simple method is disclosed. The method of manufacturing a semi-insulation GaAs monocrystal in accordance with liquid encapsulated Czochralski method, comprises the steps of: preparing a crucible (5) formed with a crucible body (6) and a small chamber (8) communicating with a lower part of the crucible body and a carbon heater (4) processed to reduce surface blow holes thereof; putting a melted GaAs liquid and a sealing compound B.sub.2 O.sub.3 in the crucible housed in an airtight vessel in such a way that the sealing compound B.sub.2 O.sub.3 is on the melted GaAs liquid and further the melted GaAs liquid put in the small chamber contains carbon to be supplied to the melted GaAs liquid in the crucible body; heating the crucible by the heater housed in the airtight vessel; and pulling up the melted GaAs liquid from the crucible body by keeping the airtight vessel at a high pressure.

摘要翻译： 为了以高生产率制造诸如霍尔传感器，FET，HEMT等器件所需的低碳浓度GaAs晶片，而不劣化其半绝缘特性，通过控制碳浓度制造半绝缘GaAs单晶的方法 在通过简单的方法的晶体生长期间被公开。 根据液体封装的Czochralski方法制造半绝缘GaAs单晶的方法包括以下步骤：制备形成有坩埚体（6）的坩埚（5）和与下部连通的小室（8） 所述坩埚体和碳加热器（4）被处理以减少其表面吹气孔; 将熔融的GaAs液体和密封化合物B 2 O 3放置在容纳在气密容器中的坩埚中，使得密封化合物B 2 O 3在熔融的GaAs液体上，并且进一步将放入小室中的熔融的GaAs液体含有供给到 熔融的GaAs液体在坩埚体内; 通过装在密封容器中的加热器加热坩埚; 并通过将气密容器保持在高压下，从坩埚主体上拉出熔融的GaAs液体。

公开(公告)号：US08514100B2

公开(公告)日：2013-08-20

申请号：US12932691

申请日：2011-03-03

申请人： Youji Yamashita

发明人： Youji Yamashita

IPC分类号： G08G1/16

CPC分类号： G08G1/166 ,  B60Q5/006 ,  B60Q9/008

摘要： A control unit detects presence of a person and a direction of his/her face based on image information inputted from an imaging device, and determines that a warning need be provided to notify the person of vehicle approach if the person is detected but his/her face is not detected. The control unit checks a determination result as to whether the warning should be provided to a warning sound output device. The warning sound output device generates warning sound in response to the determination result indicating that sound warning is needed.

摘要翻译： 控制单元基于从成像装置输入的图像信息来检测人的存在和他/她的脸部的方向，并且确定需要提供警告以通知该人，如果该人被检测到但是他/她 没有检测到脸。 控制单元检查是否应该向警告声音输出装置提供警告的确定结果。 响应于指示需要声音警告的确定结果，警告声输出装置产生警告声音。

公开(公告)号：US5389551A

公开(公告)日：1995-02-14

申请号：US24839

申请日：1993-03-01

申请人： Takanobu Kamakura ,  Youji Yamashita

发明人： Takanobu Kamakura ,  Youji Yamashita

IPC分类号： H01L21/322 ,  H01L21/306

CPC分类号： H01L21/3221 ,  Y10S148/06

摘要： A method of manufacturing a semiconductor substrate in which a damage layer is formed on one surface of a wafer. An etching protection film is formed on the damage layer. An epitaxial layer is formed on the other surface of the wafer. Thereafter, the etching protection film is removed to expose the damage layer. The exposed damage layer enhances gettering ability.

摘要翻译： 一种半导体衬底的制造方法，其中在晶片的一个表面上形成损伤层。 在损伤层上形成蚀刻保护膜。 在晶片的另一个表面上形成外延层。 此后，去除蚀刻保护膜以暴露损伤层。 暴露的损伤层增强吸气能力。

公开(公告)号：US20110234422A1

公开(公告)日：2011-09-29

申请号：US12932691

申请日：2011-03-03

申请人： Youji Yamashita

发明人： Youji Yamashita

IPC分类号： B60Q1/00

CPC分类号： G08G1/166 ,  B60Q5/006 ,  B60Q9/008

摘要： A control unit detects presence of a person and a direction of his/her face based on image information inputted from an imaging device, and determines that a warning need be provided to notify the person of vehicle approach if the person is detected but his/her face is not detected. The control unit checks a determination result as to whether the warning should be provided to a warning sound output device. The warning sound output device generates warning sound in response to the determination result indicating that sound warning is needed.

摘要翻译： 控制单元基于从成像装置输入的图像信息来检测人的存在和他/她的脸部的方向，并且确定需要提供警告以通知该人，如果该人被检测到但是他/她 没有检测到脸。 控制单元检查是否应该向警告声音输出装置提供警告的确定结果。 响应于指示需要声音警告的确定结果，警告声输出装置产生警告声音。

公开(公告)号：US06976530B2

公开(公告)日：2005-12-20

申请号：US10603971

申请日：2003-06-25

申请人： Takayuki Hayashi ,  Youji Yamashita

发明人： Takayuki Hayashi ,  Youji Yamashita

IPC分类号： F02M25/07 ,  F28D7/00 ,  F28D7/16 ,  F28D7/10

CPC分类号： F28D7/163 ,  F02M26/32 ,  F28D21/0003

摘要： A profile of the casing 20 is formed into a circular pipe shape, and the two gas coolers 10a, 10b are integrated into one body so that the longitudinal directions of the respective gas coolers can be substantially parallel with each other. Due to the above structure, it is possible to make the coolant flow smoothly in the casing 20 and stagnation of the coolant seldom occurs. Accordingly, as boiling of the coolant can be suppressed, it is possible to prevent the heat transfer coefficient from being remarkably deteriorated. Further, it is possible to suppress the generation of cracks, in the tubes 11, which are caused by heat stress.

摘要翻译： 壳体20的轮廓形成为圆形管状，并且两个气体冷却器10a，10b集成到一个主体中，使得各个气体冷却器的纵向方向可以基本上彼此平行。 由于上述结构，可以使冷却剂在壳体20内平稳流动，并且很少发生冷却剂的停滞。 因此，由于可以抑制冷却剂的沸腾，可以防止传热系数显着劣化。 此外，可以抑制由热应力引起的管11中的裂纹的产生。