Sensor thin film transistor for an optical detecting sensor
    1.
    发明授权
    Sensor thin film transistor for an optical detecting sensor 有权
    用于光学检测传感器的传感器薄膜晶体管

    公开(公告)号:US06239468B1

    公开(公告)日:2001-05-29

    申请号:US09456389

    申请日:1999-12-08

    IPC分类号: H01L2701

    摘要: A sensor TFT includes a substrate, a gate electrode formed on the substrate, a semiconductor layer patterned on the insulating layer to generate an optical current using received light, source and drain electrodes formed on the semiconductor layer, the source and drain electrodes being spaced apart from each other, and a conductive channel defined by an area between the source and drain electrodes, wherein the conductive channel is not rectangular-shaped, such that the channel width is increased for a fixed channel length.

    摘要翻译: 传感器TFT包括基板,形成在基板上的栅极电极,在绝缘层上图案化的半导体层,使用接收的光产生光电流,形成在半导体层上的源极和漏极,源极和漏极间隔开 以及由源极和漏极之间的区域限定的导电沟道,其中导电沟道不是矩形的,使得沟道宽度在固定沟道长度上增加。

    Thin film transistor type optical sensor
    2.
    发明授权
    Thin film transistor type optical sensor 有权
    薄膜晶体管型光学传感器

    公开(公告)号:US06774396B1

    公开(公告)日:2004-08-10

    申请号:US09487173

    申请日:2000-01-19

    IPC分类号: H01L2904

    摘要: A image detector comprises a light source for radiating light in accordance with a predetermined signal; a window for transmitting the light from the light source; a thin film phototransistor for generating an optical current in accordance with the intensity of external light; a storage capacitor for storing charge information transmitted from the thin film phototransistor; a thin film switching transistor for outputting the information stored in the storage capacitor in accordance with an external control signal; an insulating layer for covering the window, the thin film phototransistor, the storage capacitor, and the thin film switching transistor, a protecting layer formed on the insulating layer; and a conductive object detection pattern formed on the protecting layer to apply an electrical power supply signal to the light source when a conductive living object contacts the conductive objecting detecting pattern.

    摘要翻译: 图像检测器包括用于根据预定信号照射光的光源; 用于从光源透射光的窗口; 用于根据外部光的强度产生光电流的薄膜光电晶体管; 用于存储从薄膜光电晶体管传送的电荷信息的存储电容器; 薄膜开关晶体管,用于根据外部控制信号输出存储在存储电容器中的信息; 用于覆盖窗口的绝缘层,薄膜光电晶体管,存储电容器和薄膜开关晶体管,形成在绝缘层上的保护层; 以及形成在所述保护层上的导电物体检测图案,以在导电性物体接触所述导电性物体检测图案时向所述光源施加电力供应信号。

    Thin film transistor type optical sensor
    3.
    发明授权
    Thin film transistor type optical sensor 有权
    薄膜晶体管型光学传感器

    公开(公告)号:US06953978B2

    公开(公告)日:2005-10-11

    申请号:US10867823

    申请日:2004-06-16

    摘要: A image detector comprises a light source for radiating light in accordance with a predetermined signal; a window for transmitting the light from the light source; a thin film phototransistor for generating an optical current in accordance with the intensity of external light; a storage capacitor for storing charge information transmitted from the thin film phototransistor; a thin film switching transistor for outputting the information stored in the storage capacitor in accordance with an external control signal; an insulating layer for covering the window, the thin film phototransistor, the storage capacitor, and the thin film switching transistor; a protecting layer formed on the insulating layer; and a conductive object detection pattern formed on the protecting layer to apply an electrical power supply signal to the light source when a conductive living object contacts the conductive objecting detecting pattern.

    摘要翻译: 图像检测器包括用于根据预定信号照射光的光源; 用于从光源透射光的窗口; 用于根据外部光的强度产生光电流的薄膜光电晶体管; 用于存储从薄膜光电晶体管传送的电荷信息的存储电容器; 薄膜开关晶体管,用于根据外部控制信号输出存储在存储电容器中的信息; 用于覆盖窗户的绝缘层,薄膜光电晶体管,存储电容器和薄膜开关晶体管; 形成在绝缘层上的保护层; 以及形成在所述保护层上的导电物体检测图案,以在导电性物体接触所述导电性物体检测图案时向所述光源施加电力供应信号。

    Thin film transistor type photo sensor
    4.
    发明授权
    Thin film transistor type photo sensor 有权
    薄膜晶体管型光电传感器

    公开(公告)号:US06242769B1

    公开(公告)日:2001-06-05

    申请号:US09453299

    申请日:1999-12-03

    IPC分类号: H01L31062

    CPC分类号: H01L27/14678 H01L29/78633

    摘要: A TFT type optical detecting sensor includes a sensor TFT for generating optical current by detecting light reflected from an object, a storage capacitor for storing charges of the optical current, and a switching TFT for controlling releasing of the charges stored in the storage capacitor. The storage capacitor is made of a transparent conductive material, such that light is transmitted from a light source through the storage capacitor to the object.

    摘要翻译: TFT型光检测传感器包括用于通过检测从物体反射的光产生光电流的传感器TFT,用于存储光电流的电荷的存储电容器,以及用于控制存储在存储电容器中的电荷释放的开关TFT。 存储电容器由透明导电材料制成,使得光从光源通过存储电容器传输到物体。

    Thin film transistor (TFT) type optical detecting sensor
    5.
    发明授权
    Thin film transistor (TFT) type optical detecting sensor 有权
    薄膜晶体管(TFT)型光学检测传感器

    公开(公告)号:US06445003B1

    公开(公告)日:2002-09-03

    申请号:US09562446

    申请日:2000-05-01

    IPC分类号: H01L2904

    摘要: A TFT type optical detecting sensor includes a capacitor, a sensor TFT, and a switching TFT each having an active layer with a channel having an elongated width. The width of the channel of the sensor TFT is substantially defined by a distance of a side of the pixel excluding the switching source wire and sensor drain wire. The first electrode of the capacitor of the optical detecting sensor is electrically connected to the sensor gate electrode of the sensor TFT.

    摘要翻译: TFT型光检测传感器包括电容器,传感器TFT和开关TFT,每个TFT具有具有细长宽度的通道的有源层。 传感器TFT的通道的宽度基本上由除开关源极线和传感器漏极线之外的像素的一侧的距离限定。 光检测传感器的电容器的第一电极电连接到传感器TFT的传感器栅电极。

    Thin film transistor type optical detecting sensor
    6.
    发明授权
    Thin film transistor type optical detecting sensor 有权
    薄膜晶体管型光检测传感器

    公开(公告)号:US06906342B1

    公开(公告)日:2005-06-14

    申请号:US09466961

    申请日:1999-12-20

    摘要: An optical detecting sensor includes a sensor thin film transistor generating an optical current in response to incident light reflected from an object; a storage capacitor storing charges of the optical current generated in the sensor thin film transistor; and a switch thin film transistor controlling release of the stored charges of the storage capacitor to an outer circuit for display of image of the object, having dual-layered source and drain electrodes of transparent conducting material and metal material, an active layer and a gate electrode. The switch thin film transistor further includes an ohmic contact layer on the active layer through which the dual-layered drain and source electrodes contact the active layer.

    摘要翻译: 光检测传感器包括响应于从物体反射的入射光而产生光电流的传感器薄膜晶体管; 存储电容器,其存储在所述传感器薄膜晶体管中产生的光电流的电荷; 以及开关薄膜晶体管,其控制存储电容器的存储电荷释放到用于显示对象的图像的外部电路,具有透明导电材料和金属材料的双层源极和漏极,活性层和栅极 电极。 开关薄膜晶体管还包括有源层上的欧姆接触层,双层漏极和源电极通过该接触层与有源层接触。

    Organic light emitting device and manufacturing method thereof
    8.
    发明授权
    Organic light emitting device and manufacturing method thereof 有权
    有机发光器件及其制造方法

    公开(公告)号:US08221180B2

    公开(公告)日:2012-07-17

    申请号:US12898566

    申请日:2010-10-05

    IPC分类号: H01J9/00

    CPC分类号: H01L27/3253

    摘要: An organic light emitting device and a manufacturing method thereof are provided. The organic light emitting device includes a first display substrate, a second display substrate, and a first adhesive force improving member. The first display substrate includes a first substrate, a first electrode, organic light emitting patterns, a first spacer, and a second electrode. The first electrode is formed on an entire surface of the first substrate, and the organic light emitting patterns are disposed on the first electrode. The first spacer corresponds to the organic light emitting pattern and is disposed on the first electrode. The second electrode covers the organic light emitting patterns and the first spacer. The second display substrate includes a second substrate, and a first driving signal delivery part. The first adhesive force improving member electrically/physically couples the second electrode to the first driving signal delivery part.

    摘要翻译: 提供了一种有机发光器件及其制造方法。 有机发光装置包括第一显示基板,第二显示基板和第一粘接力改善部件。 第一显示基板包括第一基板,第一电极,有机发光图案,第一间隔件和第二电极。 第一电极形成在第一基板的整个表面上,并且有机发光图案设置在第一电极上。 第一间隔物对应于有机发光图案,并且设置在第一电极上。 第二电极覆盖有机发光图案和第一间隔物。 第二显示基板包括第二基板和第一驱动信号传送部。 第一粘合力改善构件将第二电极电/物理耦合到第一驱动信号传递部分。

    Organic light emitting diode device
    9.
    发明授权
    Organic light emitting diode device 有权
    有机发光二极管装置

    公开(公告)号:US08221176B2

    公开(公告)日:2012-07-17

    申请号:US12905808

    申请日:2010-10-15

    IPC分类号: H01J9/00

    摘要: An organic light emitting diode (OLED) device according to the present invention includes a first substrate; a first electrode on the first substrate in the pixel region, the first electrode formed of a metal; an organic light-emitting layer on the first electrode; a second electrode on the organic light-emitting layer, the second electrode formed of a transparent conductive material; and a transparent layer on the second electrode, the transparent layer including an inorganic material or a semiconductor material.

    摘要翻译: 根据本发明的有机发光二极管(OLED)器件包括第一衬底; 在所述像素区域中的所述第一基板上的第一电极,所述第一电极由金属形成; 在第一电极上的有机发光层; 有机发光层上的第二电极,由透明导电材料形成的第二电极; 以及第二电极上的透明层,所述透明层包括无机材料或半导体材料。