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    IMAGE SENSOR HAVING NANODOT
    1.
    发明申请
    IMAGE SENSOR HAVING NANODOT 失效
    具有NANODOT的图像传感器

    公开(公告)号：US20100019296A1

    公开(公告)日：2010-01-28

    申请号：US12508079

    申请日：2009-07-23

    申请人： Dae-kil Cha ,  Young-gu Jin ,  Bok-ki Min ,  Yoon-dong Park

    发明人： Dae-kil Cha ,  Young-gu Jin ,  Bok-ki Min ,  Yoon-dong Park

    IPC分类号： H01L31/112 ,  H01L31/0232

    CPC分类号： H01L27/14643 ,  B82Y20/00 ,  B82Y30/00 ,  H01L27/14625

    摘要： An image sensor includes a plurality of pixels disposed in an array, each pixel comprising a first region and a second region, the first region and the second region separated from each other in a semiconductor layer, and doped with impurities having different conductivities from each other, a photoelectric conversion region formed between the first and second regions, and at least one metal nanodot that focuses an incident light onto the photoelectric conversion region.

    摘要翻译： 图像传感器包括排列成阵列的多个像素，每个像素包括第一区域和第二区域，第一区域和第二区域在半导体层中彼此分离，并且掺杂有彼此不同电导率的杂质 形成在第一和第二区域之间的光电转换区域和将入射光聚焦到光电转换区域上的至少一个金属纳米点。

    Image sensor having nanodot
    4.
    发明授权
    Image sensor having nanodot 失效
    具有纳米点的图像传感器

    公开(公告)号：US08143685B2

    公开(公告)日：2012-03-27

    申请号：US12508079

    申请日：2009-07-23

    申请人： Dae-kil Cha ,  Young-gu Jin ,  Bok-ki Min ,  Yoon-dong Park

    发明人： Dae-kil Cha ,  Young-gu Jin ,  Bok-ki Min ,  Yoon-dong Park

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14643 ,  B82Y20/00 ,  B82Y30/00 ,  H01L27/14625

    摘要： An image sensor includes a plurality of pixels disposed in an array, each pixel comprising a first region and a second region, the first region and the second region separated from each other in a semiconductor layer, and doped with impurities having different conductivities from each other, a photoelectric conversion region formed between the first and second regions, and at least one metal nanodot that focuses an incident light onto the photoelectric conversion region.

    摘要翻译： 图像传感器包括排列成阵列的多个像素，每个像素包括第一区域和第二区域，第一区域和第二区域在半导体层中彼此分离，并且掺杂有彼此不同电导率的杂质 形成在第一和第二区域之间的光电转换区域和将入射光聚焦到光电转换区域上的至少一个金属纳米点。

    MULTI-PORT LIGHT SOURCES OF PHOTONIC INTEGRATED CIRCUITS
    5.
    发明申请
    MULTI-PORT LIGHT SOURCES OF PHOTONIC INTEGRATED CIRCUITS 有权
    光子集成电路的多光源光源

    公开(公告)号：US20130105840A1

    公开(公告)日：2013-05-02

    申请号：US13534728

    申请日：2012-06-27

    申请人： Bok-ki Min ,  Taek Kim ,  Young-soo Park

    发明人： Bok-ki Min ,  Taek Kim ,  Young-soo Park

    IPC分类号： H01L33/60

    CPC分类号： G02B6/12004 ,  G02B6/1228 ,  G02B2006/12121

    摘要： A multi-port light source of a photonic integrated circuit (PIC) may include a light emission portion for generating light; and a plurality of waveguides on opposite sides of the light emission portion to guide the light. A multi-port light source of a photonic integrated circuit (PIC) may include a first layer including a first pattern and a second pattern that are different from each other; an insulating layer on at least a region of the first layer; an active layer on at least a region of the insulating layer; and a reflective layer on the active layer.

    摘要翻译： 光子集成电路（PIC）的多端口光源可以包括用于产生光的发光部分; 以及在发光部分的相对侧上的多个波导以引导光。 光子集成电路（PIC）的多端口光源可以包括彼此不同的包括第一图案和第二图案的第一层; 在所述第一层的至少一个区域上的绝缘层; 在所述绝缘层的至少一个区域上的有源层; 以及有源层上的反射层。

    Multi-chips with an optical interconnection unit
    6.
    发明授权
    Multi-chips with an optical interconnection unit 有权
    具有光互连单元的多芯片

    公开(公告)号：US08120044B2

    公开(公告)日：2012-02-21

    申请号：US12081277

    申请日：2008-04-14

    申请人： Soo-haeng Cho ,  Kyoung-ho Ha ,  Han-youl Ryu ,  Sung-dong Suh ,  Seong-gu Kim ,  Bok-ki Min

    发明人： Soo-haeng Cho ,  Kyoung-ho Ha ,  Han-youl Ryu ,  Sung-dong Suh ,  Seong-gu Kim ,  Bok-ki Min

    IPC分类号： H01L27/15 ,  H01L29/16 ,  H01L31/12 ,  H01L33/00

    CPC分类号： G02B6/43 ,  H01L2224/05554 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/00

    摘要： A multi-chip having an optical interconnection unit is provided. The multi-chip having an optical interconnection unit includes a plurality of silicon chips sequentially stacked, a plurality of optical device arrays on a side of each of the plurality of the silicon chips such that the optical device arrays correspond to each other and a wiring electrically connecting the silicon chip and the optical device array attached to a side of the silicon chip, wherein the corresponding optical device arrays forms an optical connection unit by transmitting and receiving an optical signal between the corresponding optical device arrays in different layers. Each of the optical device arrays includes at least one of a light emitting device and a light receiving device.

    摘要翻译： 提供具有光互连单元的多芯片。 具有光学互连单元的多芯片包括顺序层叠的多个硅芯片，多个硅芯片中的每一个的一侧的多个光学器件阵列，使得光学器件阵列彼此对应，并且布线电连接 连接硅芯片和安装在硅芯片一侧的光学器件阵列，其中相应的光学器件阵列通过在不同层中的相应的光学器件阵列之间发送和接收光学信号来形成光学连接单元。 每个光学器件阵列包括发光器件和光接收器件中的至少一个。

    Polarized light emitting diode and method of forming the same
    9.
    发明申请
    Polarized light emitting diode and method of forming the same 有权
    极化发光二极管及其形成方法

    公开(公告)号：US20080054283A1

    公开(公告)日：2008-03-06

    申请号：US11797003

    申请日：2007-04-30

    申请人： Bok-ki Min ,  Cheol-soo Sone

    发明人： Bok-ki Min ,  Cheol-soo Sone

    IPC分类号： H01L33/00

    CPC分类号： H01L33/44

    摘要： Example embodiments are directed to a polarized light emitting diode and method of forming the same. The polarized light emitting diode may include a support layer, a semiconductor layer structure, and/or a polarization control layer. The semiconductor layer structure may be formed on the support layer and may include a light-emitting layer. The polarization control layer may be formed on the semiconductor layer structure and may include a plurality of metal nanowires. The polarized light emitting diode may be configured to control the polarization of emitted light. The method of forming a polarized light emitting diode may include forming on a substrate a semiconductor layer structure with a light emitting layer. A reflecting layer may be formed on the semiconductor layer structure with an attached support layer. The substrate may be removed from the semiconductor layer structure and a polarization control layer including metal nanowires may be formed on the semiconductor layer structure.

    摘要翻译： 示例性实施例涉及一种偏振发光二极管及其形成方法。 偏振发光二极管可以包括支撑层，半导体层结构和/或偏振控制层。 半导体层结构可以形成在支撑层上，并且可以包括发光层。 偏光控制层可以形成在半导体层结构上，并且可以包括多个金属纳米线。 偏振发光二极管可以被配置为控制发射光的偏振。 形成偏振发光二极管的方法可以包括在衬底上形成具有发光层的半导体层结构。 可以在具有附接的支撑层的半导体层结构上形成反射层。 可以从半导体层结构去除衬底，并且可以在半导体层结构上形成包括金属纳米线的偏振控制层。

    Light emitting device having multi-pattern structure and method of manufacturing same
    10.
    发明授权
    Light emitting device having multi-pattern structure and method of manufacturing same 有权
    具有多图案结构的发光器件及其制造方法

    公开(公告)号：US08013354B2

    公开(公告)日：2011-09-06

    申请号：US11737479

    申请日：2007-04-19

    申请人： Jeong-wook Lee ,  Jin-seo Im ,  Bok-ki Min ,  Kwang-hyeon Baik ,  Heon-su Jeon

    发明人： Jeong-wook Lee ,  Jin-seo Im ,  Bok-ki Min ,  Kwang-hyeon Baik ,  Heon-su Jeon

    IPC分类号： H01L29/22

    CPC分类号： H01L33/22 ,  H01L33/007

    摘要： A semiconductor light emitting device having a multiple pattern structure greatly increases light extraction efficiency. The semiconductor light emitting device includes a substrate and a semiconductor layer, an active layer, and an electrode layer formed on the substrate, a first pattern defining a first corrugated structure between the substrate and the semiconductor layer, and a second pattern defining a second corrugated structure on the first corrugated structure of the first pattern.

    摘要翻译： 具有多重图案结构的半导体发光器件大大提高了光提取效率。 半导体发光器件包括衬底和半导体层，有源层和形成在衬底上的电极层，在衬底和半导体层之间限定第一波纹结构的第一图案和限定第二波纹状的第二图案 结构上第一个波纹结构的第一个图案。