公开(公告)号：US07893442B2

公开(公告)日：2011-02-22

申请号：US11702489

申请日：2007-02-06

Applicant: Dong-sik Shim ,  Hyung Choi ,  Young-hoon Min

Inventor： Dong-sik Shim ,  Hyung Choi ,  Young-hoon Min

IPC: H01L29/15 ,  H01L29/66 ,  H01L21/44 ,  H01L21/28

CPC classification number: H01L29/872 ,  H01L29/417

Abstract: Provided are a schottky diode having an appropriate low breakdown voltage to be used in a radio frequency identification (RFID) tag and a method for fabricating the same. The schottky diode includes a silicon substrate having a structure in which an N-type well is formed on a P-type substrate, an insulating layer surrounding a circumference of the N-type well so as to electrically separate the N-type well from the P-type substrate, an N+ doping layer partly formed in a portion of a region of an upper surface of the N-type well, an N− doping layer partly formed in the other portion of a region of the upper surface of the N-type well, a cathode formed on the N+ doping layer, and an anode formed on the N− doping layer.

Abstract translation: 提供了在射频识别（RFID）标签中使用具有适当的低击穿电压的肖特基二极管及其制造方法。 肖特基二极管包括具有在P型衬底上形成N型阱的结构的硅衬底，围绕N型阱的周围的绝缘层，以将N型阱与 P型衬底，部分地形成在N型阱的上表面的一部分区域中的N +掺杂层，部分地形成在N型阱的上表面的区域的另一部分中的N掺杂层， 类型良好，形成在N +掺杂层上的阴极和形成在N掺杂层上的阳极。

公开(公告)号：US20080096361A1

公开(公告)日：2008-04-24

申请号：US11963354

申请日：2007-12-21

Applicant: Ja-nam KU ,  Seong-hearn Lee ,  Il-jong Song ,  Young-hoon Min ,  Sang-wook Kwon

Inventor： Ja-nam KU ,  Seong-hearn Lee ,  Il-jong Song ,  Young-hoon Min ,  Sang-wook Kwon

IPC: H01L21/20

CPC classification number: H01L29/872 ,  H01L27/0788

Abstract: An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.

Abstract translation: 一体形成多个肖特基二极管和电容器的集成电路结构。 集成电路结构包括：衬底，其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层，使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层，使得第二导电层与第一导电层和电介质层一起形成电容器。 因此，当在整流电路中使用集成电路结构时，可以减小整个电路的尺寸。

公开(公告)号：US07355559B2

公开(公告)日：2008-04-08

申请号：US11639247

申请日：2006-12-15

Applicant: Yuri Tikhov ,  Young-hoon Min ,  Yong-jin Kim

Inventor： Yuri Tikhov ,  Young-hoon Min ,  Yong-jin Kim

IPC: H01Q1/36

CPC classification number: H01Q1/38 ,  H01Q5/28 ,  H01Q5/371 ,  H01Q9/285 ,  H01Q13/10

Abstract: A planar small antenna and a small strip radiator are provided which have increased bandwidth. The small strip radiator has a main strip pattern and a plurality of convoluted strip patterns terminating the main strip pattern at each end. The plurality of convoluted strip patterns are arranged in mirror-symmetrical arrangement with reference to the longitudinal axis of the main strip such that one pair of convoluted strip patterns is convoluted clockwise while another pair is convoluted counterclockwise. As a result, an electrically small antenna radiator requires less metal or conductive material than conventional radiators, and also can operate without adversely affecting the radiation characteristics of the antenna.

Abstract translation: 提供了具有增加的带宽的平面小天线和小带辐射器。 小条状散热器具有主条纹图案和在每个端部终止主条纹图案的多个卷曲条形图案。 多个卷积带状图案相对于主条的纵向轴线布置成镜对称的布置，使得一对卷曲的带状图案是顺时针旋转的，而另一对卷曲逆时针旋转。 结果，电小型天线辐射器比常规辐射器要求更少的金属或导电材料，并且还可以在不会不利地影响天线的辐射特性的情况下工作。

公开(公告)号：US20080055091A1

公开(公告)日：2008-03-06

申请号：US11651576

申请日：2007-01-10

Applicant: Il-jong Song ,  Young-hoon Min ,  Chol-su Yoon

Inventor： Il-jong Song ,  Young-hoon Min ,  Chol-su Yoon

IPC: G08B13/14 ,  H04Q5/22

CPC classification number: H01Q1/2225 ,  G06K7/10237 ,  G06K19/0723 ,  G06K19/0724 ,  G06K19/0726 ,  H01Q7/00

Abstract: An oscillator tuning system and an oscillator tuning method are provided. The system includes a determination unit which determines whether a power which is used in an RFID tag having an RFID oscillator is greater than a reference value; and a frequency tuner which tunes a driving frequency of the RFID oscillator according to a result of the determination. The method includes determining whether a power which is used in an RFID tag having an RFID oscillator is greater than a reference value; and tuning a driving frequency of the RFID oscillator according to a result of the determination.

Abstract translation: 提供振荡器调谐系统和振荡器调谐方法。 该系统包括确定单元，其确定在具有RFID振荡器的RFID标签中使用的功率是否大于参考值; 以及频率调谐器，其根据确定的结果来调谐RFID振荡器的驱动频率。 该方法包括确定在具有RFID振荡器的RFID标签中使用的功率是否大于参考值; 以及根据所述确定的结果调整所述RFID振荡器的驱动频率。

公开(公告)号：US20070278608A1

公开(公告)日：2007-12-06

申请号：US11702489

申请日：2007-02-06

Applicant: Dong-sik Shim ,  Hyung Choi ,  Young-hoon Min

Inventor： Dong-sik Shim ,  Hyung Choi ,  Young-hoon Min

IPC: H01L29/861 ,  H01L21/44

CPC classification number: H01L29/872 ,  H01L29/417

Abstract: Provided are a schottky diode having an appropriate low breakdown voltage to be used in a radio frequency identification (RFID) tag and a method for fabricating the same. The schottky diode includes a silicon substrate having a structure in which an N-type well is formed on a P-type substrate, an insulating layer surrounding a circumference of the N-type well so as to electrically separate the N-type well from the P-type substrate, an N+ doping layer partly formed in a portion of a region of an upper surface of the N-type well, an N− doping layer partly formed in the other portion of a region of the upper surface of the N-type well, a cathode formed on the N+ doping layer, and an anode formed on the N− doping layer.

Abstract translation: 提供了在射频识别（RFID）标签中使用具有适当的低击穿电压的肖特基二极管及其制造方法。 肖特基二极管包括具有在P型衬底上形成N型阱的结构的硅衬底，围绕N型阱的周围的绝缘层，以将N型阱与 P型衬底，部分地形成在N型阱的上表面的一部分区域中的N +掺杂层，部分地形成在N型阱的上表面的区域的另一部分中的N掺杂层， 类型良好，形成在N +掺杂层上的阴极和形成在N掺杂层上的阳极。

公开(公告)号：US20070139290A1

公开(公告)日：2007-06-21

申请号：US11489634

申请日：2006-07-20

Applicant: Il-jong Song ,  Yuri Tikhov ,  Young-hoon Min

Inventor： Il-jong Song ,  Yuri Tikhov ,  Young-hoon Min

IPC: H01Q1/50 ,  G08B13/14 ,  H01Q9/16

CPC classification number: H01Q1/2216

Abstract: A radio frequency identification tag (RFID) that extends a read range of an RFID reader, and an RFID system including the RFID tag. The RFID tag includes a tag antenna, an IC, and a bonding part electrically connecting the tag antenna to the IC. A complex conjugate of an impedance of the tag antenna is a value obtained by adding an impedance of the IC to an impedance of the bonding part. Thus, the RFID tag can achieve accurate impedance matching between the tag antenna and the bonding, smoothly perform data communication with the RFID reader, and extend the read range of the RFID reader.

Abstract translation: 扩大RFID读取器的读取范围的射频识别标签（RFID）和包括RFID标签的RFID系统。 RFID标签包括标签天线，IC，以及将标签天线与IC电连接的接合部。 标签天线的阻抗的复共轭是通过将IC的阻抗与接合部的阻抗相加而获得的值。 因此，RFID标签可以实现标签天线与接合之间的精确阻抗匹配，平滑地执行与RFID读取器的数据通信，并且扩展RFID读取器的读取范围。

公开(公告)号：US20060198197A1

公开(公告)日：2006-09-07

申请号：US11360615

申请日：2006-02-24

Applicant: Ja-nam Ku ,  Chung-woul Kim ,  Young-hoon Min ,  Il-jong Song ,  Dong-hyun Lee

Inventor： Ja-nam Ku ,  Chung-woul Kim ,  Young-hoon Min ,  Il-jong Song ,  Dong-hyun Lee

IPC: G11C11/34 ,  G11C16/06

CPC classification number: H03K19/00315 ,  H03K17/08128

Abstract: An over-voltage protection circuit (i.e., a limiter), includes: a first switching block having a plurality of semiconductor elements, serially connected to each other and turned on in sequence according to the magnitude of an input voltage; and a plurality of second switching blocks, in which each of the second switching blocks includes a pair of serially connected semiconductor elements having different current properties. The second switching blocks are connected in parallel to the first switching block. By minimizing a leakage current when an input voltage is below a reference voltage and by maximizing a leakage current when the input voltage is above the reference voltage, the limiter prevents excessive current from flowing into the RF tag circuit when the input voltage is below the reference voltage, and ensures that a sufficient amount of current is supplied to a regulator when the input voltage is below the reference voltage.

Abstract translation: 过电压保护电路（即限幅器）包括：具有多个半导体元件的第一开关块，它们彼此串联连接并根据输入电压的大小依次导通; 以及多个第二切换块，其中每个第二切换块包括具有不同电流特性的一对串联连接的半导体元件。 第二切换块与第一切换块并联连接。 当输入电压低于参考电压时，通过使漏电流最小化，并且当输入电压高于参考电压时使漏电流最大化，当输入电压低于参考电压时，限幅器可防止过大的电流流入RF标签电路 电压，并且确保当输入电压低于参考电压时，足够量的电流被提供给调节器。

公开(公告)号：US20050269658A1

公开(公告)日：2005-12-08

申请号：US11147164

申请日：2005-06-08

Applicant: Ja-nam Ku ,  Seong-hearn Lee ,  Il-jong Song ,  Young-hoon Min ,  Sang-wook Kwon

Inventor： Ja-nam Ku ,  Seong-hearn Lee ,  Il-jong Song ,  Young-hoon Min ,  Sang-wook Kwon

IPC: H01L29/872 ,  G06K19/07 ,  G06K19/077 ,  H01L21/28 ,  H01L21/822 ,  H01L27/04 ,  H01L27/07 ,  H01L29/47 ,  H01L29/732

CPC classification number: H01L29/872 ,  H01L27/0788

Abstract: An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.

Abstract translation: 一体形成多个肖特基二极管和电容器的集成电路结构。 集成电路结构包括：衬底，其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层，使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层，使得第二导电层与第一导电层和电介质层一起形成电容器。 因此，当在整流电路中使用集成电路结构时，可以减小整个电路的尺寸。

公开(公告)号：US20120007683A1

公开(公告)日：2012-01-12

申请号：US13236633

申请日：2011-09-19

Applicant: Il-jong SONG ,  Young-hoon Min ,  Chol-su Yoon

Inventor： Il-jong SONG ,  Young-hoon Min ,  Chol-su Yoon

IPC: H03L7/00

CPC classification number: H01Q1/2225 ,  G06K7/10237 ,  G06K19/0723 ,  G06K19/0724 ,  G06K19/0726 ,  H01Q7/00

Abstract: An oscillator tuning system and an oscillator tuning method are provided. The system includes a determination unit which determines whether a power which is used in an RFID tag having an RFID oscillator is greater than a reference value; and a frequency tuner which tunes a driving frequency of the RFID oscillator according to a result of the determination. The method includes determining whether a power which is used in an RFID tag having an RFID oscillator is greater than a reference value; and tuning a driving frequency of the RFID oscillator according to a result of the determination.

Abstract translation: 提供振荡器调谐系统和振荡器调谐方法。 该系统包括确定单元，其确定在具有RFID振荡器的RFID标签中使用的功率是否大于参考值; 以及频率调谐器，其根据确定的结果来调谐RFID振荡器的驱动频率。 该方法包括确定在具有RFID振荡器的RFID标签中使用的功率是否大于参考值; 以及根据所述确定的结果调整所述RFID振荡器的驱动频率。

公开(公告)号：US07978077B2

公开(公告)日：2011-07-12

申请号：US11359612

申请日：2006-02-23

Applicant: Dong-hyun Lee ,  Ja-nam Ku ,  Young-hoon Min ,  Il-jong Song ,  Sung-oh Kim ,  Kyeong-soon Cho

Inventor： Dong-hyun Lee ,  Ja-nam Ku ,  Young-hoon Min ,  Il-jong Song ,  Sung-oh Kim ,  Kyeong-soon Cho

IPC: G08B13/14

CPC classification number: H04B5/02 ,  H04B5/0062

Abstract: A radio frequency identification reader and a radio frequency identification tag that use an ultrahigh frequency band, and action methods of the radio frequency identification reader and the radio frequency identification tag. The radio frequency identification reader includes: a data generator generating data to be transmitted to a radio frequency identification tag; if a command to control the radio frequency identification tag has to be authenticated, a reader controller controlling the data generator to generate the data including an authentication code; and a reader transmitter transmitting the data to the radio frequency identification tag. As a result, securing of communications of a specific command between the radio frequency identification reader and the radio frequency identification tag can be reinforced.

Abstract translation: 使用超高频带的射频识别读取器和射频识别标签，射频识别读取器的动作方法和射频识别标签。 射频识别读取器包括：数据生成器，生成要发送到射频识别标签的数据; 如果要控制射频识别标签的命令必须被认证，则读取器控制器控制数据发生器以产生包括认证码的数据; 以及将数据发送到射频识别标签的读取器发送器。 结果，可以加强在射频识别读取器和射频识别标签之间确保特定命令的通信。