公开(公告)号：US4884236A

公开(公告)日：1989-11-28

申请号：US106346

申请日：1987-10-09

申请人： Youzi Maruyama ,  Tadashi Ikeda ,  Ryo Suzuki

发明人： Youzi Maruyama ,  Tadashi Ikeda ,  Ryo Suzuki

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/0841 ,  G11C19/08

摘要： A Bloch line memory device comprises stripe magnetic domains in a magnetic film for holding magnetic bubble domains. A pair of Bloch lines is stored as an information carrier in a magnetic wall constructing the stripe magnetic domain. A longitudinal direction of the stripe magnetic domain is made parallel to either the crystalographic directions [112] and [112], [121] and [121], or [211] and [211] of the magnetic film so that the pair of Bloch lines can be smoothly moved in the magnetic wall of the stripe magnetic domain.

摘要翻译： 布洛克线存储器件包括用于保持磁性气泡畴的磁性膜中的条状磁畴。 一对Bloch线作为信息载体存储在构成条形磁畴的磁性壁中。 条纹磁畴的纵向方向与[11＆upbar＆2]和[＆upbar＆12]，[1＆upbar＆21]和[＆upbar＆12＆upbar＆1]或[＆upbar＆211]和[2＆upbar＆1] ]，使得一对Bloch线可以平滑地移动到带状磁畴的磁壁中。

公开(公告)号：US4559617A

公开(公告)日：1985-12-17

申请号：US635169

申请日：1984-07-27

申请人： Toshihiro Sato ,  Ryo Suzuki ,  Tadashi Ikeda ,  Masatoshi Takeshita ,  Yutaka Sugita

发明人： Toshihiro Sato ,  Ryo Suzuki ,  Tadashi Ikeda ,  Masatoshi Takeshita ,  Yutaka Sugita

IPC分类号： G11C11/14 ,  G11C19/08 ,  H01F41/34

CPC分类号： G11C19/0816 ,  H01F41/34

摘要： A high density magnetic bubble memory device comprises first magnetic bubble propagation tracks formed through ion implantation and second magnetic bubble propagation tracks formed of a soft magnetic material. Regions exclusive of those destined for realization of the second magnetic bubble propagation tracks are deeply ion-implanted. Gaps between the adjacent soft magnetic material films are also deeply ion-implanted. The second magnetic bubble propagation tracks may be shallowly ion-implanted or not implanted with ions.

摘要翻译： 高密度磁气泡存储装置包括通过离子注入形成的第一磁气体传播路径和由软磁材料形成的第二磁气泡传播路径。 深入离子注入用于实现第二磁性气泡传播轨迹的区域。 相邻的软磁性材料膜之间的间隙也被深度离子注入。 第二个磁性气泡传播轨迹可以是浅离子注入的，也可以不用离子注入。

公开(公告)号：US4494216A

公开(公告)日：1985-01-15

申请号：US451093

申请日：1982-12-20

申请人： Ryo Suzuki ,  Tadashi Ikeda ,  Masatoshi Takeshita ,  Naoki Kodama

发明人： Ryo Suzuki ,  Tadashi Ikeda ,  Masatoshi Takeshita ,  Naoki Kodama

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/0891

摘要： Disclosed is a magnetic bubble memory device having a first bubble propagation path formed in an ion-implanted pattern and a second bubble propagation path formed of permalloy elements, both paths being spaced out from each other by a distance larger than or equal to the diameter of the magnetic bubble, and a propagation path connecting structure in which a hairpin-shaped conductor for connecting both propagation paths is disposed between them.

摘要翻译： 公开了具有以离子注入图案形成的第一气泡传播路径和由坡莫合金元件形成的第二气泡传播路径的磁性气泡存储器件，两个路径彼此间隔开大于或等于 磁气泡和传播路径连接结构，其中用于连接两个传播路径的发夹形导体设置在它们之间。

公开(公告)号：US4456975A

公开(公告)日：1984-06-26

申请号：US345678

申请日：1982-02-04

申请人： Ryo Suzuki ,  Naoki Kodama ,  Tadashi Ikeda ,  Yutaka Sugita

发明人： Ryo Suzuki ,  Naoki Kodama ,  Tadashi Ikeda ,  Yutaka Sugita

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/0808 ,  G11C19/0816

摘要： The magnetic bubble memory device according to this invention comprises an active magnetic bubble memory region formed by implanting ions into a layer of magnetic bubble material, a propagation loop having inner and outer propagation tracks formed by ion implantation so as to surround this region and to propagate captured magnetic bubbles along the circumference of this region, and at least one opening portion provided at the propagation loop so as to propagate magnetic bubbles in the inner propagation track to the outer propagation track.

摘要翻译： 根据本发明的磁性气泡存储装置包括通过将离子注入到磁性气泡材料层中形成的主动气泡存储区域，传播回路具有通过离子注入形成的内部和外部传播轨道，以便围绕该区域并传播 沿着该区域的圆周捕获磁气泡，以及设置在传播环路处的至少一个开口部分，以便将内部传播轨道中的气泡传播到外部传播轨道。

公开(公告)号：US4845671A

公开(公告)日：1989-07-04

申请号：US225318

申请日：1988-07-28

申请人： Youji Maruyama ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Ryo Suzuki

发明人： Youji Maruyama ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Ryo Suzuki

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/0858

摘要： A Bloch line memory device and a method of erasing information in which, for erasure of a Bloch line pair representative of one bit of information and located in one end portion of one stripe domain, the stripe domain is stretched by decreasing the intensity of a bias magnetic field, an erasure Bloch line pair having a rotation of magnetization opposite to that of the to-be-erased Bloch line pair is injected into the end portion of the stretched stripe domain by supplying a current pulse signal to a conductor arranged substantially perpendicualr to the lengthwise direction of the stripe domain, and the stretched stripe domain is shrinked by restoring the intensity of the bias magnetic field, so that the to-be-erased Bloch line pair is combined with the erasure Bloch line pair to cancel the former.

摘要翻译： 一种布洛赫线存储器件和一种擦除信息的方法，其中为了擦除代表一比特信息并位于一个条带域的一个端部中的布洛赫线对，条带域通过降低偏置强度而被拉伸 将具有与被擦除的布洛赫线对相反的磁化旋转的擦除布洛赫线对通过将电流脉冲信号提供给布置在基本上延伸的导体上而被注入延伸条带域的端部， 通过恢复偏置磁场的强度，条状域的长度方向和拉伸的条状域被收缩，使得被擦除的Bloch线对与擦除布洛赫线对组合以取消前者。

公开(公告)号：US4744051A

公开(公告)日：1988-05-10

申请号：US752587

申请日：1985-07-08

申请人： Toshihiro Sato ,  Tadashi Ikeda ,  Ryo Suzuki ,  Teruaki Takeuchi

发明人： Toshihiro Sato ,  Tadashi Ikeda ,  Ryo Suzuki ,  Teruaki Takeuchi

IPC分类号： G11C19/08

CPC分类号： G11C19/0883

摘要： A magnetic bubble memory device for implementing its high storage density for practical use is generally composed of ion-implanted elements occupying the most part of a minor loop, and other elements made of soft magnetic materials. The ion-implanted minor loop with a higher density is folded several times, and includes straight propagation tracks adjacent to each other and connected by an inside turn, with another straight propagation track having an outside turn facing the inside turn being placed between the adjacent straight tracks.

摘要翻译： 用于实现其实际使用的高存储密度的磁气泡存储装置通常由占据小环的大部分的离子注入元件和由软磁材料制成的其它元件组成。 具有较高密度的离子注入次环被折叠多次，并且包括彼此相邻并通过内部转弯连接的直线传播轨迹，而具有面向内侧转弯的外侧转弯的另一条直线传播轨道被放置在相邻直线 轨道

公开(公告)号：US4460412A

公开(公告)日：1984-07-17

申请号：US367675

申请日：1982-04-12

申请人： Ryo Imura ,  Tadashi Ikeda ,  Ryo Suzuki ,  Nagatugu Koiso ,  Teruaki Takeuchi ,  Hiroshi Umezaki ,  Yutaka Sugita

发明人： Ryo Imura ,  Tadashi Ikeda ,  Ryo Suzuki ,  Nagatugu Koiso ,  Teruaki Takeuchi ,  Hiroshi Umezaki ,  Yutaka Sugita

IPC分类号： G11C11/14 ,  H01F10/24 ,  H01F41/14 ,  H01F41/32 ,  H01F41/34 ,  H01L21/265 ,  C04B35/00 ,  G11C19/08

CPC分类号： H01F10/24 ,  H01F41/14 ,  H01F41/32 ,  H01F41/34

摘要： A method of implanting a magnetic garnet film with ions is disclosed in which a covering film is provided on a monocrystalline magnetic garnet film for magnetic bubbles, and hydrogen ions are implanted in a desired portion of a surface region in the magnetic garnet film through the covering film. According to this method, it is possible to form an ion-implanted layer in which the ion concentration distribution in the direction of depth is uniform, and moreover the inplane anisotropy field in the ion-implanted layer decreases only a little with time in an annealing process.

摘要翻译： 公开了一种用离子注入磁性石榴石膜的方法，其中在用于磁性气泡的单晶磁性石榴石膜上提供覆盖膜，并且通过覆盖物将氢离子注入到磁性石榴石膜的表面区域的期望部分中 电影。 根据该方法，可以形成离子注入层，其中在深度方向上的离子浓度分布是均匀的，此外，离子注入层中的面内各向异性场在退火中仅随时间降低一点 处理。

公开(公告)号：US4817053A

公开(公告)日：1989-03-28

申请号：US71309

申请日：1987-07-09

申请人： Tadashi Ikeda ,  Kazuo Shigematsu ,  Yasushi Miyauchi ,  Motoyasu Terao ,  Tetsuya Nishida ,  Shinkichi Horigome ,  Norio Ohta ,  Ryo Suzuki

发明人： Tadashi Ikeda ,  Kazuo Shigematsu ,  Yasushi Miyauchi ,  Motoyasu Terao ,  Tetsuya Nishida ,  Shinkichi Horigome ,  Norio Ohta ,  Ryo Suzuki

IPC分类号： G11B9/10 ,  G11B9/12 ,  G11C13/00

CPC分类号： G11B9/10

摘要： An electron beam memory system in which a phase transition type recording film is used as an information recording medium, and for recording information, a focused electron beam is selectively projected on desired positions of the recording film so as to locally heat the recording film and cause phase transition, while for retrieving information, an electron beam having energy at a degree not causing the phase transition is projected so as to utilize the fact that reflection or diffraction of the primary electron beam projected at the retrieval differs between the recorded regions and unrecorded regions.

摘要翻译： 一种电子束存储系统，其中使用相变型记录膜作为信息记录介质，并且为了记录信息，聚焦的电子束被选择性地投影到记录膜的期望位置上，以便局部地加热记录膜并导致 相位转移，而为了检索信息，投射具有不引起相变的程度的能量的电子束，以便利用在记录区域和未记录区域之间投影的一次电子束的反射或衍射不同的事实 。

公开(公告)号：US06120983A

公开(公告)日：2000-09-19

申请号：US956134

申请日：1997-10-22

申请人： Hisashi Okada ,  Ryo Suzuki ,  Naoki Asanuma ,  Tadashi Ikeda ,  Shigeo Hirano

发明人： Hisashi Okada ,  Ryo Suzuki ,  Naoki Asanuma ,  Tadashi Ikeda ,  Shigeo Hirano

IPC分类号： C09B55/00 ,  G03C1/498

CPC分类号： G03C1/49845

摘要： A photothermographic material contains an organic silver salt, a photosensitive silver halide, a reducing agent, a binder, and a compound of the formula: X--L.sub.1 --D wherein D is an electron donative group of atoms, X is an adsorption promoting group to silver halide, and L.sub.1 is a valence bond or a linking group. It has high sensitivity in the red to infrared region and experiences a minimal change of photographic properties under different developing conditions.

摘要翻译： 光热成像材料包含有机银盐，感光卤化银，还原剂，粘合剂和下式的化合物：X-L1-D其中D是原子的给电子基团，X是吸附促进基团 卤化银，L1是价键或连接基团。 它在红色到红外区域具有高灵敏度，并且在不同的显影条件下经历摄影性能的最小变化。

公开(公告)号：US4584668A

公开(公告)日：1986-04-22

申请号：US603450

申请日：1984-04-24

申请人： Teruaki Takeuchi ,  Ryo Suzuki ,  Naoki Kodama ,  Masatoshi Takeshita ,  Tadashi Ikeda ,  Toshihiro Sato ,  Yutaka Sugita

发明人： Teruaki Takeuchi ,  Ryo Suzuki ,  Naoki Kodama ,  Masatoshi Takeshita ,  Tadashi Ikeda ,  Toshihiro Sato ,  Yutaka Sugita

IPC分类号： G11C19/08

CPC分类号： G11C19/08 ,  G11C19/0891

摘要： A magnetic bubble memory device has two types of magnetic bubble propagation tracks. One type of magnetic bubble propagation tracks are formed by implanting ions into a magnetic layer. The other are formed by a soft magnetic material, for example, a permalloy. At least the area where the soft magnetic material is located has a smaller thickness than the other area.

摘要翻译： 磁性气泡存储器件具有两种类型的气泡传播轨迹。 通过将离子注入到磁性层中形成一种类型的气泡传播轨迹。 另一种由软磁性材料，例如坡莫合金形成。 至少软磁性材料所在的区域的厚度比其他区域的厚度小。