摘要:
An electron beam memory system in which a phase transition type recording film is used as an information recording medium, and for recording information, a focused electron beam is selectively projected on desired positions of the recording film so as to locally heat the recording film and cause phase transition, while for retrieving information, an electron beam having energy at a degree not causing the phase transition is projected so as to utilize the fact that reflection or diffraction of the primary electron beam projected at the retrieval differs between the recorded regions and unrecorded regions.
摘要:
In an information recording apparatus according to this invention, since it is not necessary to dispose any differential circuit, which was required heretofore, it is possible to fabricate it with a low cost and its error rate is also very small.Furthermore, since the mean reflectivity on the recording track does almost not vary by the fact that information is recorded there, no tracking off-set or focusing off-set is produced. Thus effects of this invention are remarkable.
摘要:
By recording, reproducing and erasing information by using a recording thin film of the present invention, the information can be recorded, reproduced and erased by a single beam spot and new information can be rapidly rewritten while recorded information is erased. The irradiation beam is not limited to a light beam but it may be other energy beam such as electron beam or ion beam. The record medium is not limited to a disk but it may be tape or card and is applicable to a recording thin film other than the described thin film and to other methods.By using the described recording thin film, a manufacturing process is simple and reproducible, the recording/reproducing characteristic is high and the information can be stably stored for an extended time period. The record also may be rewritten a number of times.
摘要:
In a data recording member having a data recording film which is formed on a substrate either directly or via at least one of inorganic and organic protective layers and which causes the change of atomic arrangement upon being irradiated by recording beam, the improvement wherein said data recording film has an average composition in a direction of the film thickness expressed by the following formulas:M.sub.x Te.sub.y Se.sub.z O.sub..alpha.wherein x, y, z and .alpha. are values within the ranges of 2.ltoreq.x.ltoreq.40, 30.ltoreq.y.ltoreq.95, 3.ltoreq.z.ltoreq.45, 0.ltoreq..alpha..ltoreq.20, and M is at least one element selected from the group consisting of As, Sb, Bi, S, Si, Ge, Sn, Pb, Al, Ga, In, Tl, Zn, Cd, Au, Ag, Cu, Ni, Pd, Rh, Cr, Mo, W and Ta.
摘要:
In a data recording member having a data recording film which is formed on a substrate either directly or via at least one of inorganic and organic protective layers and which causes the change of atomic arrangement upon being irradiated by recording beam, the improvement wherein said data recording film has an average composition in a direction of the film thickness expressed by the following formulas:M.sub.x Te.sub.y Se.sub.z O.sub..alpha.wherein x, y, z and .alpha. are values within the ranges of 2.ltoreq.x.ltoreq.40, 30.ltoreq.y.ltoreq.95, 3.ltoreq.z.ltoreq.45, 0.ltoreq..alpha..ltoreq.20, and M is at least one element selected from the group consisting of As, Sb, Bi, S, Si, Ge, Sn, Pb, Al, Ga, In, Tl, Zn, Cd, Au, Ag, Cu, Ni, Pd, Rh, Cr, Mo, W and Ta.
摘要:
An information-recording thin film provided on a substrate directly or through a protective layer has an average composition of the thin film being represented by the general formula;A.sub.X B.sub.Y C.sub.Z D.sub..alpha. E.sub..beta. F.sub..gamma.wherein X, Y, Z, .alpha., .beta. and .gamma. are in ranges of 0.ltoreq.X
摘要:
A thin film for recording data which is formed on a substrate directly or via a protection layer, and which develops change in the arrangement of atoms upon irradiation with a recording beam, wherein an average composition in the direction of film thickness is represented by the general formula,A.sub.X B.sub.Y C.sub.Z D.sub..alpha. E.sub..beta.wherein X, Y, Z, .alpha. and .beta. are values that lie over the ranges of 0.ltoreq.X
摘要:
An information recording thin film capable of changing an atomic configuration upon exposure to a recording beam, formed on a substrate directly or through a protective layer composed of at least one of inorganic materials and organic materials, an average composition in the film thickness direction of the information-recording thin film being represented by the following general formula;A.sub.X B.sub.Y C.sub.Z Ge.sub..alpha. Te.sub..beta.wherein X, Y, Z, .alpha. and .beta. are in ranges of 0.ltoreq.X
摘要:
A substrate of a recording member comprising a hard base, a first organic substance layer which is formed on the base, and a second organic substance layer which is made of a solvent-soluble organic substance and which is formed on a surface of the first organic substance layer opposite to a surface thereof lying in contact with the base. This substrate can be reused.
摘要:
A recording medium having at least a first inorganic material layer which overlies a predetermined substrate and which exhibits a light absorptivity for projected light, and a recording layer which overlies the first inorganic material layer and whose principal component is an organic material. The first inorganic material layer contains at least one element selected from the group consisting of In, Bi, Te, Sb, Ge, Sn, Pb, Cr, Nb, Ni, Pd, Fe, Pt, Re, Ta, Th, Ti, Zr and Tl and the content of the element or elements is at least 65 atomic-%.Further, the first inorganic material layer may well be overlaid with a second inorganic material layer which exhibits a light transmissivity higher than that of this first inorganic material layer. Preferable as the material of the second inorganic material layer is an inorganic material which contains at least one element selected from the group consisting of In, Bi, Te, Sb, Pb, Ge and Sn and at least one element selected from the group consisting of S, Se and O.In proximity to at least one surface of the first inorganic material layer, at least one stabilizing layer may be disposed as well.