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公开(公告)号：US09645509B2
公开(公告)日：2017-05-09
申请号：US12608460
申请日：2009-10-29
申请人： Yu Cao , Jun Ye , James Patrick Koonmen , Stefan Hunsche
发明人： Yu Cao , Jun Ye , James Patrick Koonmen , Stefan Hunsche
CPC分类号： G03F7/705 , G03F7/70508 , G03F7/70666
摘要： The present invention relates to a method for simulating aspects of a lithographic process. According to certain aspects, the present invention uses transmission cross coefficients to represent the scanner data and models. According to other aspects, the present invention enables sensitive data regarding various scanner subsystems to be hidden from third party view, while providing data and models useful for accurate lithographic simulation.
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公开(公告)号：US20090300573A1
公开(公告)日：2009-12-03
申请号：US12475095
申请日：2009-05-29
IPC分类号： G06F17/50
CPC分类号： B29C67/0088 , B29C64/386 , G03F7/70091 , G03F7/70458 , G03F7/705 , G03F7/70516 , G03F7/70525 , G06F17/50 , G06F17/5009 , G06F17/5081
摘要： Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.
摘要翻译： 描述了过程仿真的系统和方法。 这些方法可以使用标识参考扫描仪对一组可调谐参数的灵敏度的参考模型。 可以使用参考模型来模拟来自芯片设计的芯片制造，其中芯片设计被表示为一个或多个掩模。 可以使用迭代重调和仿真过程来优化模拟芯片中的关键尺寸，并获得模拟芯片与预期芯片的收敛。 此外，可以向设计者提供一组结果，从中创建更新的芯片设计。
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公开(公告)号：US20120303151A1
公开(公告)日：2012-11-29
申请号：US13481564
申请日：2012-05-25
申请人： Jun Ye , Yu Cao , James Patrick Koonmen
发明人： Jun Ye , Yu Cao , James Patrick Koonmen
IPC分类号： G05B19/18
CPC分类号： G03F7/70525 , B29C64/386 , G03F9/7096 , G05B13/04
摘要： The present invention provides a number of innovations in the area of computational process control (CPC). CPC offers unique diagnostic capability during chip manufacturing cycle by analyzing temporal drift of a lithography apparatus/ process, and provides a solution towards achieving performance stability of the lithography apparatus/process. Embodiments of the present invention enable optimized process windows and higher yields by keeping performance of a lithography apparatus and/or parameters of a lithography process substantially close to a pre-defined baseline condition. This is done by comparing the measured temporal drift to a baseline performance using a lithography process simulation model. Once in manufacturing, CPC optimizes a scanner for specific patterns or reticles by leveraging wafer metrology techniques and feedback loop, and monitors and controls, among other things, overlay and/or CD uniformity (CDU) performance over time to continuously maintain the system close to the baseline condition.
摘要翻译： 本发明提供了计算过程控制（CPC）领域的许多创新。 CPC通过分析光刻设备/工艺的时间漂移，在芯片制造周期中提供独特的诊断功能，并为实现光刻设备/工艺的性能稳定性提供了解决方案。 本发明的实施例通过保持光刻设备的性能和/或基本上接近预定义基线条件的光刻工艺的参数来实现优化的工艺窗口和更高的产量。 这通过使用光刻过程模拟模型将测量的时间漂移与基线性能进行比较来完成。 一旦制造，CPC通过利用晶片计量技术和反馈回路来优化扫描仪的特定图案或掩模版，并监控和控制其他方面的重叠和/或CD均匀性（CDU）性能，以持续保持系统接近 基线条件。
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公开(公告)号：US20140046646A1
公开(公告)日：2014-02-13
申请号：US14064917
申请日：2013-10-28
IPC分类号： G06F17/50
CPC分类号： B29C67/0088 , B29C64/386 , G03F7/70091 , G03F7/70458 , G03F7/705 , G03F7/70516 , G03F7/70525 , G06F17/50 , G06F17/5009 , G06F17/5081
摘要： Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.
摘要翻译： 描述用于调整光刻工艺的系统和方法。 保持目标扫描仪的型号，参考一组可调谐参数来定义目标扫描仪的灵敏度。 差分模型表示目标扫描器与参考值的偏差。 可以基于参考扫描仪和差分模型的设置来调整目标扫描仪。 可以相对于参考扫描仪的性能来表征相关扫描仪系列的性能。 差分模型可能包括诸如参数偏移和可能用于模拟成像行为差异的其他差异的信息。
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公开(公告)号：US08571845B2
公开(公告)日：2013-10-29
申请号：US12475080
申请日：2009-05-29
IPC分类号： G06F17/50
CPC分类号： B29C67/0088 , B29C64/386 , G03F7/70091 , G03F7/70458 , G03F7/705 , G03F7/70516 , G03F7/70525 , G06F17/50 , G06F17/5009 , G06F17/5081
摘要： Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.
摘要翻译： 描述用于调整光刻工艺的系统和方法。 保持目标扫描仪的型号，参考一组可调谐参数来定义目标扫描仪的灵敏度。 差分模型表示目标扫描器与参考值的偏差。 可以基于参考扫描仪和差分模型的设置来调整目标扫描仪。 可以相对于参考扫描仪的性能来表征相关扫描仪系列的性能。 差分模型可能包括诸如参数偏移和可能用于模拟成像行为差异的其他差异的信息。
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公开(公告)号：US20100141925A1
公开(公告)日：2010-06-10
申请号：US12608460
申请日：2009-10-29
申请人： Yu CAO , Jun Ye , James Patrick Koonmen , Slefan Hunsche
发明人： Yu CAO , Jun Ye , James Patrick Koonmen , Slefan Hunsche
IPC分类号： G03B27/32
CPC分类号： G03F7/705 , G03F7/70508 , G03F7/70666
摘要： The present invention relates to a method for simulating aspects of a lithographic process. According to certain aspects, the present invention uses transmission cross coefficients to represent the scanner data and models. According to other aspects, the present invention enables sensitive data regarding various scanner subsystems to be hidden from third party view, while providing data and models useful for accurate lithographic simulation.
摘要翻译： 本发明涉及一种用于模拟光刻工艺的方面的方法。 根据某些方面，本发明使用传输交叉系数来表示扫描仪数据和模型。 根据其他方面，本发明使得关于各种扫描器子系统的敏感数据能够从第三方视图中隐藏起来，同时提供用于精确光刻模拟的数据和模型。
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公开(公告)号：US08856694B2
公开(公告)日：2014-10-07
申请号：US13481564
申请日：2012-05-25
申请人： Jun Ye , Yu Cao , James Patrick Koonmen
发明人： Jun Ye , Yu Cao , James Patrick Koonmen
CPC分类号： G03F7/70525 , B29C64/386 , G03F9/7096 , G05B13/04
摘要： The present invention provides a number of innovations in the area of computational process control (CPC). CPC offers unique diagnostic capability during chip manufacturing cycle by analyzing temporal drift of a lithography apparatus/ process, and provides a solution towards achieving performance stability of the lithography apparatus/process. Embodiments of the present invention enable optimized process windows and higher yields by keeping performance of a lithography apparatus and/or parameters of a lithography process substantially close to a pre-defined baseline condition. This is done by comparing the measured temporal drift to a baseline performance using a lithography process simulation model. Once in manufacturing, CPC optimizes a scanner for specific patterns or reticles by leveraging wafer metrology techniques and feedback loop, and monitors and controls, among other things, overlay and/or CD uniformity (CDU) performance over time to continuously maintain the system close to the baseline condition.
摘要翻译： 本发明提供了计算过程控制（CPC）领域的许多创新。 CPC通过分析光刻设备/工艺的时间漂移，在芯片制造周期中提供独特的诊断功能，并为实现光刻设备/工艺的性能稳定性提供了解决方案。 本发明的实施例通过保持光刻设备的性能和/或基本上接近预定义基线条件的光刻工艺的参数来实现优化的工艺窗口和更高的产量。 这通过使用光刻过程模拟模型将测量的时间漂移与基线性能进行比较来完成。 一旦制造，CPC通过利用晶片计量技术和反馈回路来优化扫描仪的特定图案或掩模版，以及监视和控制其他方面的覆盖和/或CD均匀性（CDU）性能，以持续保持系统接近 基线条件。
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公开(公告)号：US08806387B2
公开(公告)日：2014-08-12
申请号：US12475095
申请日：2009-05-29
IPC分类号： G06F17/50
CPC分类号： B29C67/0088 , B29C64/386 , G03F7/70091 , G03F7/70458 , G03F7/705 , G03F7/70516 , G03F7/70525 , G06F17/50 , G06F17/5009 , G06F17/5081
摘要： Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.
摘要翻译： 描述了过程仿真的系统和方法。 这些方法可以使用标识参考扫描仪对一组可调谐参数的灵敏度的参考模型。 可以使用参考模型来模拟来自芯片设计的芯片制造，其中芯片设计被表示为一个或多个掩模。 可以使用迭代重调和仿真过程来优化模拟芯片中的关键尺寸，并获得模拟芯片与预期芯片的收敛。 此外，可以向设计者提供一组结果，从中创建更新的芯片设计。
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公开(公告)号：US20100010784A1
公开(公告)日：2010-01-14
申请号：US12475080
申请日：2009-05-29
IPC分类号： G06F17/50
CPC分类号： B29C67/0088 , B29C64/386 , G03F7/70091 , G03F7/70458 , G03F7/705 , G03F7/70516 , G03F7/70525 , G06F17/50 , G06F17/5009 , G06F17/5081
摘要： Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.
摘要翻译： 描述用于调整光刻工艺的系统和方法。 保持目标扫描仪的型号，参考一组可调谐参数来定义目标扫描仪的灵敏度。 差分模型表示目标扫描器与参考值的偏差。 可以基于参考扫描仪和差分模型的设置来调整目标扫描仪。 可以相对于参考扫描仪的性能来表征相关扫描仪系列的性能。 差分模型可能包括诸如参数偏移和可能用于模拟成像行为差异的其他差异的信息。
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