VOLTAGE CONTROL METHOD AND MEMORY DEVICE USING THE SAME
    1.
    发明申请
    VOLTAGE CONTROL METHOD AND MEMORY DEVICE USING THE SAME 有权
    使用该电压控制方法和存储器件

    公开(公告)号:US20120039141A1

    公开(公告)日:2012-02-16

    申请号:US13209010

    申请日:2011-08-12

    IPC分类号: G11C7/12

    摘要: A memory device is provided, which includes a plurality of global bit lines, a discharge line, a switching circuit configured to connect the plurality of global bit lines to the discharge line in response to a discharge enable signal, a first discharge circuit configured to apply a first voltage that is higher than a ground voltage to the discharge line, a precharge circuit configured to apply a precharge voltage to a selected global bit line among the plurality of global bit lines, and a second discharge circuit configured to discharge the selected global bit line to a second voltage that is higher than the ground voltage.

    摘要翻译: 提供了一种存储器件,其包括多个全局位线,放电线,配置成响应于放电使能信号将多个全局位线连接到放电线的开关电路,配置为施加的第一放电电路 第一电压,其高于对所述放电线的接地电压;预充电电路,被配置为对所述多个全局位线中的所选择的全局位线施加预充电电压;以及第二放电电路,被配置为将所选择的全局位 线路到高于接地电压的第二电压。

    STABLE CURRENT SUPPLY CIRCUIT IRRESPECTIVE OF PVT VARIATIONS AND SEMICONDUCTOR HAVING SAME
    2.
    发明申请
    STABLE CURRENT SUPPLY CIRCUIT IRRESPECTIVE OF PVT VARIATIONS AND SEMICONDUCTOR HAVING SAME 有权
    具有PVT变化的稳定电流供应电路和具有相同功能的半导体

    公开(公告)号:US20100309715A1

    公开(公告)日:2010-12-09

    申请号:US12780975

    申请日:2010-05-17

    申请人: Young Don CHOI

    发明人: Young Don CHOI

    IPC分类号: G11C11/00 G05F3/16 G11C5/14

    摘要: A current supply circuit comprises a reference voltage generator generating a reference voltage that varies with temperature, a current circuit generating a constant reference current irrespective of the temperature based on the reference voltage, and a current source generating a mirror current by mirroring a base current as a replica current of the reference current.

    摘要翻译: 电流源电路包括产生基于温度变化的参考电压的参考电压发生器,与基于参考电压的温度无关地产生恒定参考电流的电流电路,以及通过将基极电流作为反射电流产生镜电流的电流源, 参考电流的复制电流。