摘要:
A nonvolatile memory device includes a first memory structure. The first memory structure includes first through N-th memory dies that may be connected to an external memory controller via a first channel. N is a natural number equal to or greater than two. At least one of the first through N-th memory dies is configured to be used as a first representative die that performs an on-die termination (ODT) operation while a data write operation is performed for one of the first through N-th memory dies.
摘要:
The present invention relates to a cooling apparatus for an electronic device. In the present invention, a coolant passing through a condenser 10 is introduced into and s filled in a compensator 15. The coolant passing through the compensator 15 is introduced into a vaporizer 20 and vaporized through heat exchange with an auxiliary heat source H2 provided outside of the vaporizer. In addition, a vaporizing unit 22 made of a porous material is provided in the vaporizer 20. The coolant passing through the vaporizer 20 and a liquid coolant supplied from the condenser 10 are mixed in a vortex generating unit 30 to form a coolant spray, and the coolant spray moves along a spiral trajectory to be formed into a vortex. Meanwhile, the coolant spray of a vortex is injected to be in close contact with the inner wall of an evaporator 50 to be heat-exchanged with a main heat source H1 positioned outside of the evaporator, thereby cooling the main heat source H1. According to the present invention as mentioned above, the main heat source adjacent to the evaporator is heat-exchanged with the coolant more actively to thereby improve the cooling performance of the electronic device. Also, a pressure loss of the coolant spouted from the venturi tube is further reduced.
摘要:
A semiconductor device is disclosed including a through electrode. The semiconductor device may include a first semiconductor chip including a transceiver circuit formed on a first surface, a first coupling conductive pattern which is formed on a second surface opposite the first surface, and a through electrode which connects the transceiver circuit and the first coupling conductive pattern. There may be a transceiver located on a second semiconductor chip and including a second coupling conductive pattern facing the first coupling conductive pattern which communicates wirelessly with the first coupling conductive pattern.
摘要:
An up/down detection unit samples a received data signal and determines in which of first through third areas of the data signal the logic level of the data signal transitions, wherein the data sampling clock signal, the first edge sampling clock signal, and the second edge sampling clock signal are sequentially activated. A lower limit detection unit detects a lower limit of the first area if the logic level of the data signal transitions in the first area. An upper limit detection unit detects an upper limit of the third area if the logic level of the data signal transitions in the third area. A phase detection unit determines a delay amount indicating the amount by which the data signal is to be delayed according to the upper limit and lower limit detected. A buffer unit delays the data signal by the delay amount determined by the phase detection unit.
摘要:
A stacked semiconductor device includes a plurality of stacked chips, each having a plurality of elements to receive a signal. At least one first ladder main signal line for receiving the signal is arranged to pass through the chips. At least one second ladder main signal line is arranged to pass through the chips. A plurality of ladder buffers buffer the signal applied from the first ladder main signal line to the second ladder main signal line. The signal is uniformly distributed to the stacked chips using a ladder type circuit network technique.
摘要:
A semiconductor device having an electrostatic discharge (ESD) protection circuit and a method of testing the same may provided. The semiconductor device may include one or more stacked chips, each stacked chip may include a test circuit configured to output a test control signal and a selection control signal in response to a test enable signal, an internal circuit configured to perform an operation and output a plurality of test signals in response to the test control signal, at least one multiplexer (MUX) configured to select and output one of the plurality of test signals based on the selection control signal, at least one test pad configured to receive the selected test signal, and at least one electrostatic discharge (ESD) protection circuit configured to discharge static electricity applied through the test pad externally.
摘要:
A loop filter capable of controlling a charge sharing point in time, a phase locked loop, and a method of operating the loop filter are provided. The loop filter includes a duty control unit and a variable capacitor unit. The duty control unit generates a duty control clock signal of which an activation section is shorter than an inactivation section, by controlling a duty of an input clock signal. The variable capacitor unit is charged by an input current and has a capacitance that varies according to the duty control clock signal. The variable capacitor unit may include a switch, a first capacitor, and a second capacitor. The switch is turned on or off in response to the duty control clock signal. The first capacitor is serially connected to the switch and charged by the input current when the switch is turned on. The second capacitor is connected in parallel to the switch and the first capacitor and charged by the input current.
摘要:
A stacked semiconductor device and a method of forming a serial path of the stacked semiconductor device are provided. The stacked semiconductor device includes a plurality of chips each having a first internal circuit for receiving an input signal, performing a designated operation and outputting an output signal. Each of the chips includes a serial bump disposed at the same position on one surface of each of the chips, receiving the input signal and transferring the input signal to the first internal circuit, and a serial through-silicon via (TSV) disposed at a position symmetrical to the serial bump with respect to a center of the chip to penetrate the chip, and receiving and transferring the output signal. Here, the chips are alternately rotated and stacked, so that the serial TSV and the serial bumps of adjacent chips contact each other. According to the stacked semiconductor device and method, a plurality of chips having the same pattern are rotated about the center of the chips and stacked, so that a parallel path and a serial path can be formed.
摘要:
Deskewing method and apparatus, and a data reception apparatus using the deskewing method and apparatus, in which the deskewing apparatus includes an up/down detection unit, a lower limit detection unit, an upper limit detection unit, a phase detection unit, and a buffer unit. The up/down detection unit samples a received data signal in response to a data sampling clock signal, a first edge sampling clock signal, and a second edge sampling clock signal and determines in which of first through third areas of the data signal the logic level of the data signal transitions by using the result of the sampling, wherein the data sampling clock signal, the first edge sampling clock signal, and the second edge sampling clock signal are sequentially activated. The lower limit detection unit detects a lower limit of the first area if the logic level of the data signal transitions in the first area. The upper limit detection unit detects an upper limit of the third area if the logic level of the data signal transitions in the third area. The phase detection unit determines a delay amount indicating the amount by which the data signal is to be delayed according to the upper limit detected by the upper limit detection unit and the lower limit detected by the lower limit detection unit. The buffer unit delays the data signal by the delay amount determined by the phase detection unit. The deskewing apparatus can optimize data sampling by efficiently reducing data skew. In addition, the deskewing apparatus can minimize data restoration errors by reducing an accumulation of jitter.
摘要:
A Voltage Controlled Oscillator (VCO) includes a plurality of oscillation units connected in cascade to form a chain; and a plurality of current source sections operatively connected to the oscillation units, the current source sections each being configured to control current provided to the oscillation units, wherein each of the current source sections includes: at least one fixed current source configured to perform a current control of a corresponding oscillation unit by using a fixed voltage; and at least one variable current source configured to perform a current control of the corresponding oscillation unit by using a variable voltage.